Image not available
Illustrative purposes only
BSC070N10LS5ATMA1
Power MOSFET, N Channel, 100 V, 79 A, 7000 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 83W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 79A
- Drain Source On State Resistance: 7000µohm
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.665 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC070N10LS5** ES Giineon
## **MOSFET OptiMOS[TM]** 5
## **Features**
**==> picture [140 x 97] intentionally omitted <==**
**----- Start of picture text -----**<br>
PG-TDSON-8<br>8 5<br>7 6 5 has 6 a 7 8<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>**----- End of picture text -----**<br>
**==> picture [480 x 124] intentionally omitted <==**
**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Drain|
|Pin 5-8|
|Table|1|Key|Performance|Parameters|
|Parameter|Value|Unit|Gate|*1|
|Pin 4|
|V|DS|100|V|
|Source|
|R|DS(on),max|7|m|Ω|*1: Internal body diode|Pin 1-3|
|I|D|79|A|
|Q|oss|41|nC|
|Q|G(0V..4.5V)|16|nC|
**----- End of picture text -----**<br>
**==> picture [460 x 31] intentionally omitted <==**
**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|Type|Package|Marking|
|/|Ordering|Code|||Reelated|
|BSC070N10LS5|PG-TDSON-8|070N10L5|-|
**----- End of picture text -----**<br>
Final Data Sheet
1
**OptiMOS[TM] �5�Power-Transistor,�100�V BSC070N10LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.�2.2,��2023-03-08
**OptiMOS[TM] �5�Power-Transistor,�100�V BSC070N10LS5**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|79<br>61<br>14|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50°C/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|318|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|55|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|83<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.9|1.5|°C/W|-|
|Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|50|°C/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.2,��2023-03-08
**OptiMOS[TM] �5�Power-Transistor,�100�V BSC070N10LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=49µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|6.0<br>7.7|7.0<br>8.5|mΩ|_V_GS=10V,_I_D=40A<br>_V_GS=4.5V,_I_D=20A|
|Gate resistance1)|_R_G|-|1.0|1.5|Ω|-|
|Transconductance|_g_fs|36|73|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=40A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2100|2700|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|340|440|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|16|28|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6.5|-|ns|_V_DD=40V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|3.6|-|ns|_V_DD=40V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|20|-|ns|_V_DD=40V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|5.3|-|ns|_V_DD=40V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|4|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|6|8|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|9|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|16|20|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|3.2|-|V|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|26|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|41|54|nC|_V_DS=50V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.2,��2023-03-08
4
**OptiMOS[TM] �5�Power-Transistor,�100�V BSC070N10LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|70|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|318|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=40A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|21|42|ns|_V_R=50V,_I_F=40A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|12|24|nC|_V_R=50V,_I_F=40A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.2,��2023-03-08
5
**OptiMOS[TM] BSC070N10LS5**
**==> picture [539 x 284] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 80<br>FSC CEE EEE S PN<br>a 70 PT TE NEEEEEE<br>80 petiSN tALLEtitOtf ttt ty tt PitSaast_ LI N E ELE E E E LIE<br>iFEC E NELLIE 60 Pi TTT TEEN~ ELLE<br>PPP Pr KAP Py 50 PT te; EEE EN EE EEE<br>60<br>= ERETS EEEEREELELELELELELRAR EEE EE PittitE EEE LN\ ELLE<br>Be [IiTTiTiIntrerrrrrrrFeerrereeReeeereeeeTOE E EEC EEEEEEE ie|£ 40 |PTifyte eeetE EEE e et?EEENE REEEEEEI<br>40<br>eeTOO EEE REEL 30 Pit ttt ie eE_ TEIN \ | |<br>iPf Pi TTTTEEALE<br>FSFEPet Pye EEEfp IN Fy de 20 Pit ttt eee ELT ELLY\ EI<br>20 PPFPrPrryyeere ine eee Ft tt tt ttt ttt dd A<br>iNee| 44). f-}-}-}-INqf- 10 PitPit ttettt eEeeeee LTLTELLEELT Ly<br>0 a IN 0 Pi TEL EEE E EL EL ELL\<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>T C °C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [2]<br>single pulse<br>YP | | CTT (| 0.01 ee<br>TTT 0.02 ee |<br>1 µs 0.05<br>10 [2] a NUTTON 10 µs oy TTT 10 [1] li 0.10.2 Ia CAINET<br>0.5<br>rT TAT UINNONTT OR TTT TNT [o o TT)<br>100 µs<br>HTT RN 10 ms OCT a a<br>10 [1] 10 [0]<br>P74 TN EN ll AN TMC i coe COT<br>1 ms<br>< SEES te = SSA aoe<br>Pa a ee CN TNT TTT x Lem nda ees eblamen TTT | em IIIT OT TIT OT<br>DC HH ST<br>EHEC PT)<br>10 [0] NAN 10 [-1] i<br>A eT vA TT PTT<br>10 [-1] 10 [-2]<br>COICO ||oo<br>ee ee ee TE ee<br>eerT TE TT LTTTTTTT)<br>10 [-2] a enee || 10 [-3] aPL TTIIIM aLEILTTEa aEET UT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS Iv] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM]**[100][ V] 5[Power-Transistor,] **BSC070N10LS5**
**==> picture [531 x 641] intentionally omitted <==**
**----- Start of picture text -----**<br>
320 20.0<br>10 V<br>280 E TTTTTT EE 17.5 FAY) 2.8 V PEE) Ye | |<br>TA EEE<br>5 V<br>3 V<br>240 LET A ere 15.0 |<br>He | IT<br>3.5 V<br>200 ETT AT A EE 12.5 AVY ELE Ey<br>HA / ,<br>4.5 V 4 V<br>160 10.0<br>4.5 V<br>= Hig |<br>THe | eee ocr<br>120 LV 7.5 - _ -<br>5 V<br>4 V<br>HWA ee<br>10 V<br>80 5.0<br>A ET ee<br>3.5 V<br>40 foA) Jaane 2.5<br>3 V<br>2.8 V<br>0 ——————Pao 0.0 SPELLELT LEER<br>0 1 2 3 4 5 0 20 40 60 80 100 120 140 160<br>V DS I D<br>[Vv] [A]<br>|) I D=f( V DS T j 25°C; parameters V GS 25 R DS(on)=f( I D T j "Ci parameters V GS<br>[Dlagram 7: Typ. transfer characteristics | Diagram: Typ.drain-source on resistance |<br>280 20.0<br>COE<br>25 °C<br>PEERsusvestesazevestonszazetal EE EPP TGA | GPT<br>240 COPEat 17.5<br>COE<br>COE<br>15.0<br>200 eee | IN<br>COC 150 °C<br>PEERS000 80eEEESee NuN<br>COE 12.5 a<br>160 COCA | 150 °C Lt<br>-££ COO(Oooo ||, 10.0 | il TH<br>120 CEE<br>COCAS000 TTT NTT\<br>COC 7.5 a7<br>25 °C<br>80<br>COC E 5.0 HTTP nee| TTT<br>COC fA<br>S000<br>40<br>20000, 2.5<br>COCOsusvestesazarestcozeztee | PATTON<br>COCO<br>0 eer oo 0.0<br>0 Hecaee 1 caaeeceeecs 2 3 4 5 | 0 {(PIMIPIMMIMI 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>PE parameters Ts AOA parameter:<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC070N10LS5**
**==> picture [528 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 PTT TEL LELELELELELEL PPP 2.4 LTT TET TTT Tey ery yy ee TT<br>PTT TLL LLLP BRR<br>7 LEIS TET T TTP erty Ey ET ET<br>1.6 PY TTT EET TTT TT TTT TEE 2.0 SS<br>L LT TNLEN EE EEE EEE EE<br>oO / MA ~<br>1.6<br>°& PY TTT EET TE YEE PLT TT TT TTT NPEET TTT TT<br>nSOLE 1.2 4nRRRaeee4 LET EET TTT TT TENETBAUS ET<br>o>2 LLL ETTTT TT TE TEApA FCCCeeeCCSN<br>® lA => ~<br>1.2<br>490 µA<br>E2 0.8 PT LATEa FEEEEEEEEEEECEEEECTBSLETTE EET TTT eT Ey ES<br>=S PTter— EEE 0.8 BERR 49 µA<br>no§ PET TTT EEE EEE EE EEE FEEEEEEEEEE Eee eee<br>. PY TTT EET TTT TTT TT TT EEE FEECEEET TPT<br>0.4<br>LE pee ep 0.4 FEE CECEEC<br>POAC FE p fqee<br>0.0 PLTPETEETT TEEPETET TET TET EEEEETEEPEEEEETT 0.0 FECEEEETTFEEEEEEEEEEELLLLLLLLLLLPET TT FFTLI<br>-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>
**==> picture [530 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>EEE EEE EEE EEE SSS SS SSeS<br>poeee | | fy yy yy || 25 °C PtyERRtT Teeeeye te<br>Yr | Tt tT | tT ee te te eT tT rE rT Thr hE cE hr hh TT (| 25 °C, max ERR<br>a 7 150 °C FEC<br>Ciss 150 °C, max<br>SH00000 0000000000 00000008 P M asceneiine<br>\ Anne NEREREEEEEEEEEEE MAOSEROO ER APRRUD REEDED?” cannne<br>WEEE EE E<br>10 [3] 10 [2]<br>REESE ee<br>py EEE BEER EEE EE EEE EEE<br>; [| Pee| | 7 TTSeeSAD TT TT ee eee A AA OOA AOY YOA Ge Sk |<br>ee > eee eee AoA<br>Coss<br>=& PEERSME Na | eee)fs PELL TEEPE Aye<br>SC UUURLGRARURAGERRUBAAGAA SOUT RRTATTRRTARTACEGRRRITTARA<br>ANEELEELEELEELEELE EEE VEEP<br>10 [2] 10 [1]<br>SS Se<br>Popt | | | | Ry yy Aa| GA<br>(| yt| yt| | NN| NET TT TT TTT TT eT eT TT (TTTATy Te Ty yt ie Tope TP TTeeTT TT TT<br>a EEC CECE eer<br>FETT TEE NEE EET TEE EET TET PETE EEE TTT TaeEEE<br>Crss<br>TTT SSSELLETT TTT PELLET LLG EEE<br>ELLE Pee A EEEEEELLLLELLETEEE EEE<br>10 [1] 10 [0]<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS IV] V SD IV]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM]** 5 Power-Transistor, 100 V **BSC070N10LS5**
**==> picture [526 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] EE HH 10 Pos S o LL TL OS<br>EE a EHH EEE ee ee eeEE EE 11 20 V50 V Pi;Bee| tT tt ht rt tT rT TYae<br>80 V<br>NN FT NTT\ | 8 O a| | | | Oo| | | | | hc TdhT hv YerHOOTT<br>10 [1]<br>25 °C<br>Se eee eeee ETT Se A ee<br>a a a Nee ee 6 4<br>SS a ee<2<br>= YT TT fT ET AEE 100 °C | TNO a nnn, 2<br>x \ NI ><br>125 °C<br>4<br>10 [0] COMMIT TT NO\ 6f it y ee2ey<br>SSSLE NTTNe 222[| 2<br>Pte 6 e _- 2 ee) 2 ee ee eee<br>HHHHERR<br>--HER | ARED4 eee<br>A ee ee<br>10 [-1] 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 4 8 12 16 20 24 28 32<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =40A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
**==> picture [148 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>
**==> picture [259 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
108 LT TTT TT Tt tT te te et te tT TT TdT TdT TT<br>rT {TTT Tt tt te tet te te tt TT TT ht rT<br>Pt tert tt tt tee tee tt tT tT eT TT TT TT<br>rT tT tT Tt tt tte tee te te tT ET TT TT TT<br>106 rT TTT Tt tt tte tee te te te et Tht hE dT UTA<br>eae<br>rT tT tT tT ttt tte tee te te tT ET ET TY TT<br>rT {TTT tt tt tT? tet tet tet et At fT<br>Ltt ttt tet tet tet tt et ttt PA TT<br>104 rT tT TTT ttt tte tet tet te tT yy Tt tt oT<br>Pt; ter; et tt tet te te tee te eT EW TT<br>rT tT tT tT ttt tte te te te te te v7 tt tt TT<br>rT tT tT tt tT ttt? tt tt fA Tet et Tt oT<br>S 102 rTrT tertTTT ttTt tttet teetT te teette tertT yt tT tTtT tTTT TT TT<br>a rT tT TTT ttt tt tt vi tT tt tt tT Tt rT<br>rt; teret tt tt tT te te yay tet tt tt tT<br>LTT TTT tT Tt tT tT yA tT Tt tt tt eT<br>100 rTeeeTTT Ti ti tTTArPtT42aTET et tt TT Tt rT<br>rT TTT Titi vi Tt tT te tT Tt TT TT ht TT<br>rT tT TtTrTiyTYyt<br>rTLttTTT Tt tt tte t eett te tetit te tteT TAtt TTtT yt TT CTtT<br>98 rT [iT] ttt? [ TITTIiATT] yA Tet ett et<br>TTT T_T TET tT tT tT tT tT tT TT Tt TT<br>PT TiTrTyT TT ttt ttt tt tt tT Tt ht rT<br>TTr-Ti[TlTAwAT trTrTyvi[JA TI t Ti TTtttttT| t tettt t Tt t ettet tt tT tTtT tt TT htTt T rT<br>96 rrTiAz tT iT Tt tte tee te tt ET TT TT TT<br>rTa{TTT Tt tt te tet te te tt TT TT ht rT<br>Pt tert tt tt tee tee tt tT tT eT TT TT TT<br>rT tT tT Tt tt tte tee te te tT ET TT TT TT<br>94<br>rT TTT Titi? ttt t tt tt ttt ttt it<br>-80 -40 0 40 80 120 160<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] �5�Power-Transistor,�100�V BSC070N10LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
|PACKAGE - GROU<br>NUMBER:|**PG-TDSON-8-U08**<br>P|**PG-TDSON-8-U08**<br>P|
|---|---|---|
|**DIMENSIONS**|**MILLIMETERS**||
||MIN.|MAX.|
|**A**|0.90|1.20|
|**b**|0.34|0.54|
|**c**|0.15|0.35|
|**D**|4.80|5.35|
|**D1**<br>|3.90<br>|4.40<br>|
|**D2**|0.00|0.22|
|**E**|5.70|6.10|
|**E1**|4.05<br>4.25||
|**e**|1.27<br>||
|**L**|0.45|0.65|
|**L1**|0.45|0.65|
## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.2,��2023-03-08
**OptiMOS[TM]** 5 Power-Transistor, 100 V **BSC070N10LS5**
Final Data Sheet
11
**OptiMOS[TM] BSC070N10LS5**
## BSC070N10LS5
|Previous Revision|Previous Revision|Previous Revision||
|---|---|---|---|
|Revision||Date|Subjects (major changes since last revision)|
|2.0||2019-04-01|Release of final version|
|2.1<br>2.2|2021-12-06<br>2023-03-08<br>~~Po ~~||Update package outline drawing<br> ~~Update "Avalanche energy"~~|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
12
Updated at March 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →