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BSC0703LSATMA1
Power MOSFET, N Channel, 60 V, 64 A, 6500 µohm, PG-TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 46W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TDSON
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 64A
- Drain Source On State Resistance: 6500µohm
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.757 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC0703LS**
## **MOSFET OptiMOS[TM]**
## **Features**
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SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5S, "ing,<br>Perso<br>1 7 4 3<br>2 2<br>3 1<br>4<br>**----- End of picture text -----**<br>
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S 1 8 D<br>S 2 7 D<br>S 3 | ( =) r T 6 D<br>G 4 5 D<br>. ,<br>**----- End of picture text -----**<br>
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S 2<br>Table Parameter 1 Key Performance Value Parameters Unit S 3 | (<br>V DS 60 V G 4<br>R DS(on),max 6.5 m Ω<br>I D 64 A<br>Q OSS 19 nC<br>a Q G(0V..4.5V) 10 nC L K<br>Package Marking<br>Type/OrderingCode | | Related Links<br>BSC0703LS PG-TDSON-8 0703LS -<br>**----- End of picture text -----**<br>
Final Data Sheet
1
**OptiMOS[TM] �Power-Transistor,�60�V BSC0703LS**
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.�2.2,��2020-05-15
**OptiMOS[TM] �Power-Transistor,�60�V BSC0703LS**
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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|64<br>41<br>15|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|256|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|21|mJ|_I_D=40A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|46<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|1.6|2.7|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.2,��2020-05-15
**OptiMOS[TM] �Power-Transistor,�60�V BSC0703LS**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=20µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|5.3<br>7.2|6.5<br>9.2|mΩ|_V_GS=10V,_I_D=32A<br>_V_GS=4.5V,_I_D=16A|
|Gate resistance1)|_R_G|-|1.2|1.8|Ω|-|
|Transconductance|_g_fs|32|63|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=32A|
## **Table�5�����Dynamic�characteristics[1)]**
|**Table5Dynamiccharacterist**|**ics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1400|1800|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance|_C_oss|-|300|390|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|16|28|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=30V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|3|-|ns|_V_DD=30V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|14|-|ns|_V_DD=30V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|3|-|ns|_V_DD=30V,_V_GS=10V,_I_D=32A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.4|-|nC|_V_DD=30V,_I_D=32A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|2.4|-|nC|_V_DD=30V,_I_D=32A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|3.3|5|nC|_V_DD=30V,_I_D=32A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|5.3|-|nC|_V_DD=30V,_I_D=32A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|10|13|nC|_V_DD=30V,_I_D=32A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|3.1|-|V|_V_DD=30V,_I_D=32A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|18|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|19|25.5|nC|_V_DD=30V,_V_GS=0V|
> 1) Defined by design. Not subject to production test
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.2,��2020-05-15
4
**OptiMOS[TM] �Power-Transistor,�60�V BSC0703LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|39|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|156|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.2|V|_V_GS=0V,_I_F=32A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|24|48|ns|_V_R=30V,_I_F=_32_,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|14|28|nC|_V_R=30V,_I_F=_32_,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.2,��2020-05-15
5
**OptiMOS[TM] BSC0703LS**
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50 80<br>40 e e ee<br>60<br>SAS} N E<br>30 FNP4 LLEN<br>ee= \ ee < 40<br>20<br>aN tt tN LI<br>20<br>10<br>0 0<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [3] 10 [1]<br>Reo edt Et tt CCCI<br>a Fer CenCoe<br>EC ars es HHA<br>1 µs<br>10 [2]<br>0.5<br>s oe) NT eel<br>10 µs<br>10 [0]<br>/ NS N ~ 0.2 an LAVA|<br>100 µs<br>0.1<br>10 [1]<br>1 ms<br>0.05<br>SSN 10 ms SSS [| ee<br>Ea 0.02<br>TTI DC EE 10 [-1] TAN VALLI Ul<br>0.01<br>NallIS ATT HT a=<br>10 [0]<br>single pulse<br>SSS |<br>SSS SHH Occo on oo<br>eee ee ee A /<br>TN LULL<br>10 [-1] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC0703LS**
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250 15<br>3 V<br>Pt | ft ye | fe , ff} 4-4<br>200 fo ft 5 V aSS 12 3.2 V 3.5 V iToop<br>Pt| tt Te Z 4 V a eee<br>4.5 V<br>4.5 V<br>150 Pt Yoo 9 Vann eee 5 V<br>co | ft Le he Je ae eee<br>z Ko<br>Si 4 V £ ee<br>7 V<br>100 6<br>yone == ee e 10 V<br> Y¥ | Ser<br>3.5 V<br>foo | GRERRERE<br>50 3<br>3.2 V FEE<br>Paes) ES<br>3 V<br>2.8 V<br>= Se<br>0 0<br>0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 250<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>250 Pt | ft tL pA ft 120 — | | | |<br>200 Pt | tL AL A<br>| | ft ol ep l f ee<br>80<br>150 ee ee KK.<br>25 °C<br>ee | 150 °C ee A<br>| ae Yi}| | |<br>100<br>40<br>fePTE) 7,| [| |<br>50<br>| A+<br>| Vi fT | ft f<br>| i | | | ff<br>0 AF te 0 P| Te<br>0 2 4 6 8 0 20 40 60 80 100<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC0703LS**
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12 3<br>TI<br>11 TSE<br>i ey<br>10 A<br>i a Oy,<br>9 a<br>A,<br>8 i 2<br>max<br>7 Aa _—rm 200 µA<br>6 aeeaeie oS~~<br>typ<br>5 a a 20 µA SN<br>aa es ><br>4 aes a ae 1 NO~<br>PTEe<br>ia<br>3<br>2 feaOO<br>OO<br>a<br>1<br>a<br>a<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>
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10 [4] 10 [3]<br>25 °C<br>a | LI rT tT [| [| TT ty tT yyy TT<br>a (| 150 °C Pi [| | [| [| | [ | J JT [ JT 7 4<br>es [| 25°C max rT | [| | fT TT TT rE Th<br>sO 1 150°C max PCE ELLE<br>ee ee ee ee ee P T T ILLIL<br>ee Ciss L EE<br>10 [3] NSa 10 [2] a III e|77 ee eer?<br>Se<br>—————————— ete<br>a a [ | | | | [| [| [| J7{[/7iT [ J J f [ [ J J JT J<br>ac Asa a _ ree| | | | | | | yf [fteee| | vy fT fT fy yt<br>A<br>Coss<br>\ LETTE ge eT<br>Ne eee SULEELEEL LEE<br>10 [2] 10 [1]<br>a [ [| [| [| [| JT py TPT TT er Ty yy yy tT<br>a Ne ( | | | | | Ff [fl [rPF | J | f | fy fy fy<br>PONNN EE eeeeeee ee ee eee<br>NN RE<br>Crss<br>a LLEEARAR E<br>10 [1] 10 [0] LL EE<br>0 20 40 60 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
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OptiMOS [TM]<br>BSC0703LS<br>10 [2] 10<br>—<br>a ee 9 y,<br>Pt ET TTT Wi<br>NENT ENTE 8 Id 30 V<br>25 °C 7<br>10 [1] NIN 125 °C 100 °C TT) | EEE 12 V<br>48 V<br>a ON 6 Sf<br>Po ETT NENT TONE Y<br>x ee)ee 5 LD Ys<br>4<br>10 [0]<br>IETAIN LUMINESLLEING DSU TH VA LE<br>3<br>aarTa oTa TTT0 TT0 TTeS 2 A<br>ee el 1 /<br>LINE<br>10 [-1] 0<br>LCE LEHI} WOEEEE<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25<br>t AV [us] Q gate [nc]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
## **Diagram Gate charge waveforms**
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70 | {| | | | | | | | tT tt<br>ee<br>ee<br>66 ne<br>| {| | | | | | | ft ft tt<br>| {| | | | | | | | ft ft ft<br>| {| | | | | | | | Pee<br>62 Pot tT tT EEeen<br>es ee eeee<br>eB ~~, | pet | tt ft<br>| | | eT tT | | TT<br>58 ee ee eee<br>—“T | | | | | | | ft | ft<br>ee<br>ee<br>54 ne<br>| {| | | | | | | ft ft tt<br>a<br>| {| | | | | | | ft ft ft<br>50 a<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] �Power-Transistor,�60�V BSC0703LS**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
**==> picture [123 x 43] intentionally omitted <==**
|1.27<br>**MILLIMETERS**<br>0.90<br>1.20<br>0.34<br>0.54<br>0.03<br>0.23<br>3.88<br>4.31<br>0.45<br>0.71<br>**MIN.**<br>**MAX.**<br>0.45<br>0.69<br>0.15<br>0.35<br>3.90<br>4.40<br>4.80<br>5.35<br>5.70<br>6.10<br>5.90<br>6.42||Z8B00003332<br>|**.**|
|---|---|---|---|
|||**REVISION**<br>07||
||0|1<br>**10:1**<br>**SCALE**<br>2|3mm|
|||||
||**EU**|**ROPEAN PROJE**|**CTION**|
|||**ISSUE DATE**<br>06.06.2019||
## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.2,��2020-05-15
**OptiMOS[TM] �Power-Transistor,�60�V BSC0703LS**
**==> picture [120 x 53] intentionally omitted <==**
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PG-TDSON-8: Recommended Boardpads & Apertures<br>1.905 1.905<br>1.27 0.6 1.27 0.5<br>3x 3x<br>1.6<br>0.2 1.5<br>1.27 0.5 1.27 0.4<br>3x 3x<br>1.905 1.905<br>copper solder mask stencil apertures all dimensions in mm<br>0.8<br>0.2 0.75<br>3.325 2.9<br>4.455<br>1.5<br>5<br>7<br>2.863 2.863 80. 0.825<br>0.925<br>**----- End of picture text -----**<br>
## Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.�2.2,��2020-05-15
OptiMOS[TM] Power-Transistor , 60 V BSC0703LS
**==> picture [69 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
Dimension in mm<br>**----- End of picture text -----**<br>
Figure 3 Outline Tape (TDSON-8)
Rev. 2.2, 2020-05-15
Final Data Sheet
12
OptiMOS[TM] Power-Transistor , 60 V BSC0703LS
**==> picture [120 x 53] intentionally omitted <==**
## Revision History
## BSC0703LS
## Revision: 2020-05-15, Rev. 2.2
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-10-06|Release of final version|
|2.1|2016-10-20|Update " Features "|
|2.2|2020-05-15|Update package drawings|
## Trademarks
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Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved.
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## Information
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## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2, 2020-05-15
Final Data Sheet
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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