Image not available
Illustrative purposes only
BSC061N08NS5ATMA1
Power MOSFET, N Channel, 80 V, 82 A, 6100 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 74W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 82A
- Drain Source On State Resistance: 6100µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.692 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MOSFET
**OptiMOS[TM]** OptiMOS[TM] 5 BSC061N08NS5
Final
## **OptiMOS[TM]** 5 Power-Transistor, BSC061N08NS5 80 V
## **Features**
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**----- Start of picture text -----**<br>
1)<br>**----- End of picture text -----**<br>
|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|80|V|
|_R_DS(on),max|6.1|mΩ|
|_I_D|82|A|
|_Q_oss|33|nC|
|_Q_G(0V..10V)|27|nC|
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||**Package**|**Marking**||
|---|---|---|---|
|BSC061N08NS5|PG-TDSON-8|061N08NS|-|
1) J-STD20 and JESD22
Final Data Sheet
2
**OptiMOS[TM] 5�Power-Transistor,�80�V**
BSC061N08NS5
**==> picture [146 x 65] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.�2.0,��2014-12-27
**OptiMOS[TM] 5�Power-Transistor,�80�V**
BSC061N08NS5
**==> picture [146 x 65] intentionally omitted <==**
## **2�����Maximum�ratings**
at� _T_ j�=�25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|82<br>52<br>19|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|328|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|50|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|74<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **3�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|1.0|1.7|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See figure 3 for more detailed information
> 3) See figure 13 for more detailed information
Final Data Sheet
Rev.�2.0,��2014-12-27
4
**OptiMOS[TM] 5�Power-Transistor,�80�V**
BSC061N08NS5
**==> picture [146 x 65] intentionally omitted <==**
## **4�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=41µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|5.2<br>7.4|6.1<br>9.0|mΩ|_V_GS=10V,_I_D=41A<br>_V_GS=6V,_I_D=20.5A|
|Gate resistance1)|_R_G|-|1.0|1.5|Ω|-|
|Transconductance|_g_fs|32|65|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=41A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1900|2500|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|310|400|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|16|28|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=40V,_V_GS=10V,_I_D=41A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|6|-|ns|_V_DD=40V,_V_GS=10V,_I_D=41A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|19|-|ns|_V_DD=40V,_V_GS=10V,_I_D=41A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|5|-|ns|_V_DD=40V,_V_GS=10V,_I_D=41A,<br>_R_G,ext=3Ω|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2014-12-27
5
BSC061N08NS5
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## **OptiMOS[TM] 5�Power-Transistor,�80�V**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|9|-|nC|_V_DD=40V,_I_D=41A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|5|-|nC|_V_DD=40V,_I_D=41A,_V_GS=0to10V|
|Gate to drain charge2)|_Q_gd|-|6|9|nC|_V_DD=40V,_I_D=41A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|10|-|nC|_V_DD=40V,_I_D=41A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|27|33|nC|_V_DD=40V,_I_D=41A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.9|-|V|_V_DD=40V,_I_D=41A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|23|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge2)|_Q_oss|-|33|44|nC|_V_DD=40V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|67|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|328|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.89|1.1|V|_V_GS=0V,_I_F=41A,_T_j=25°C|
|Reverse recoverytime2)|_t_rr|-|37|74|ns|_V_R=40V,_I_F=41A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge2)|_Q_rr|-|37|74|nC|_V_R=40V,_I_F=41A,d_i_F/d_t_=100A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test.
Final Data Sheet
6
Rev.�2.0,��2014-12-27
**OptiMOS[TM]**
5 Power-Transistor, BSC061N08NS5 80 V
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Final Data Sheet
7
5 Power-Transistor, BSC061N08NS5 80 V
## **OptiMOS[TM]**
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**----- Start of picture text -----**<br>
360 12<br>TTT LE LLLILIALLLLLLGE 2 5 V 5.5 V 6 V 7 V<br>11<br>320 PTTL TTT ery Yr eye y, {t+} }1<br>10 V 10<br>280<br>9<br>FEEEEEE-CEECEEHtt Yt 7 V | DOREEEE E EEEREZSREE<br>240 TEP vA 8<br>FEES — [—]<br>7<br>Z| EEE | eee epee<br>200 PTTL TIA TALL ELL ie ee = >eee<br>fff 6 10 V ee<br>160<br>5<br>ECACC ee<br>120 6 V 4<br>FSR | SRR RES EEEE<br>3<br>APE | EEEEEEEEEEEEEE<br>80 5.5 V<br>Ae ee<br>2<br>40 See) 5 V EEE<br>1<br>| AoUY / | FSS SSSSSE<br>0 FCO 0 FEEEEE<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>240 ft | | | ft ft Le 160 —{| i | jf ff<br>200<br>ppPy) See eet<br>120<br>|<br>PERE) GEEERE<br>160<br>SS<br>Fe<br>120 80<br>EERE<br>80 es F EERZ| REESE<br>40<br>PERE)ff |EERE|v; | | | | |<br>40<br>150 °C<br>25 °C<br>oe y fof [| | | [| ft]<br>0 YY 0 ee<br>0 2 4 6 8 0 20 40 60 80 100 120 140 160<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM]** 5 Power-Transistor, BSC061N08NS5 80 V
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**----- Start of picture text -----**<br>
11 4<br>rTTstsesfitstftfsffhmdftfhMPYl<br>10 es<br>OO ——<br>9 410 µA<br>2 —<br>3 SE.So<br>8 A 2 So<br>max 41 µA<br>7 eea Lif Reawaw<br>6 es NN<br>ee typ 2 LEY EONS] I<br>aaee eee 2. N<br>5<br>a<br>4 ek Ae<br>cd [A] ee<br>3 a<br>GO 1<br>a<br>2<br>a<br>1 OO<br>0 sea 0 LT ELE ELE ELEY<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f(=f( T j V GS== V DS<br>10 [4] 10 [3]<br>25 °C<br>a SR CO (| 150 °C (Tot [| | tT tT Tt TT TT JT [TT TT Tf<br>ee || 25 °C, max fT | | | | [| | | | fT fT ft et<br>150 °C, max<br>a (E N cccsessziiz=e<br>Ciss<br>10 [3] 10 [2]<br>————a sea oea | A<br>L eG _ ri | | | | | tel fp [yer tT tT tT<br>Coss<br>3 ee ee ee oar a<br>N= a COURT CGRRTRRGn<br>10 [2] PNT| | ty Le 10 [1]<br>cr ae hs<br>LS ( [| [| [| | | i, | fi, fk T tT tT tT T ty tT tT ft<br>es L | | | | | Pf Tet Tt fT tT Th TT<br>a See coe<br>{| | ‘ff Tt | PTT ETE ay TEE<br>Crss<br>ae ee (LEEEOFETEEEEEE<br>10 [1] 10 [0]<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
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Final Data Sheet
9
## **OptiMOS[TM]** 5 Power-Transistor, BSC061N08NS5 80 V
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**----- Start of picture text -----**<br>
10 [2] 10<br>=]aeea a ee eeee ee ae 9 n/n IY,<br>25 °C<br>agpRT SNE NG NTTTTfe 87 LY, 40 V<br>PNA ON en / A<br>CEPSUE 100 °C TTI | 6 -=}-—=} —f<br>16 V 64 V<br>10 [1] ONIN 5 y<br>ENNHH SEE 125 °C NH 4 fe<br>PINT. _F ENT fe<br>PT TTT | NEAT TTT 3 f<br>OTITIS 2 A TTfo<br>CCIM FIRES |) 1 4<br>ATIF 4<br>10 [0] UTUIE S N UT M 0 f/f | | | | | |<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>PC Gate charge waveforms<br>86 PPE; TEE Ey ie<br>84 PET EEE EEE A<br>COCOA :<br>82<br>Ee Tit TP yet<br>80 PETE PAE EE<br>CARAT<br>78<br>ZTE /<br>76 PEE EEE EEE Ey | I 7 2.<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D pe<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
PC Gate charge waveforms<br>**----- End of picture text -----**<br>
Final Data Sheet
10
**OptiMOS[TM]**
5 Power-Transistor, BSC061N08NS5 80 V
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**----- Start of picture text -----**<br>
EUROPEAN PROJECTION<br>**----- End of picture text -----**<br>
Final Data Sheet
11
**OptiMOS[TM]**
5 Power-Transistor, BSC061N08NS5 80 V
BSC061N08NS5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2014-12-27|Release of final version|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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