BSC059N04LS6ATMA1

Power MOSFET, N Channel, 40 V, 59 A, 5900 µohm, TDSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS 6
Qualification: -
Power Dissipation: 38W
Transistor Mounting: Surface Mount
Transistor Polarity: N Channel
Power Dissipation Pd: 38W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.0047ohm
Transistor Case Style: TDSON
Drain Source Voltage Vds: 40V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 59A
Drain Source On State Resistance: 5900µohm
Automotive Qualification Standard: -
Gate Source Threshold Voltage Max: 2.3V

Delivery and price
Units per pack	3000
Price	0.369 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC059N04LS6** 

## **MOSFET** 

## **OptiMOS** 

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8<br>7<br>Features 6<br>5<br>GES ~<br>¢ Optimized for synchronous application “Agee,<br>+ Very low on-resistance R DS(on) 1 = 5<br>2 6<br>*¢ Superior100% avalanchethermal testedresistance 3 4 acS 7 8<br>¢ N-channel<br>¢ Pb-free lead plating; ROHS compliant 4 3<br>* Halogen-free according to IEC61249-2-21 2<br>1<br>¢ 175 °C rated<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>S 1S 2 TL i LJ]l 8 D7 D<br>S 3 6 D<br>Table 1 Key Performance Parameters | | f F<br>Parameter Value Unit<br>G 4 5 D<br>V DS 40 V<br>R DS(on),max 5.9 m Ω<br>I D 59 A<br>Q oss 10.2 nC<br>Q G(0V..10V) 9.4 nC<br>= Q G(0V..4.5V) 4.6 nC : ,<br>Package Marking<br>Type/OrderingCode | | Related Links<br>BSC059N04LS6 TDSON-8 FL 59N04LS6 -<br>**----- End of picture text -----**<br>


Final Data Sheet 

1 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC059N04LS6** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 

Final Data Sheet 

2 

Rev.�2.0,��2018-07-31 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC059N04LS6** 

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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|59<br>41<br>49<br>35<br>17|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|236|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|10|mJ|_I_D=41A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|38<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|4|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2018-07-31 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC059N04LS6** 

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## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|4.7<br>6.8|5.9<br>8.4|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=50A|
|Gate resistance|_R_G|-|2.2|-|Ω|-|
|Transconductance|_g_fs|-|100|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|640|830|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|210|270|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|12|21|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|3|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|1.2|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|8|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|2|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.1|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|1.0|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|1.4|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|2.4|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|9.4|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|3.2|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|4.6|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|3.9|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|10.2|-|nC|_V_DD=20V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2018-07-31 

4 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC059N04LS6** 

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## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|38|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|236|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.92|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|13|-|ns|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge1)|_Q_rr|-|22|-|nC|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs|



1) Defined by design. Not subject to production test. Final Data Sheet 

Rev.�2.0,��2018-07-31 

5 

**OptiMOS BSC059N04LS6** 

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40 60<br>a —_<br>35 S O oe<br>50<br>INE\ ee a Ssa<br>Ss es<br>30 tT ONE Ee Rs——ss<br>25 SS 40<br>NS SS<br>20 30<br>SN fg<br>15<br>SEES | ESE ERS<br>20<br>Sa Rs<br>10 a pp<br>PF  OGof tl TT LQ ————a<br>5 PfSS[| | | tf \Yt]\ 10 esSV|esA Vl<br>0 Sa Oe 0 —_|—___|___|____}_<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] 10 [1]<br>_—— q single pulse HE THH<br>0.01<br>0.02<br>0.05<br>10 [2] 1 µs 0.1<br>| | AYN UTI 0.2 1<br>SS SSE SS 10 µs SSH l 0.5 eame s<br>—— TT ||<br>7 Ss Bt tH oe<br>ATTA NEE oe r UA LM UTA<br>10 [1] 100 µs<br>NER EEE NEE RE E44 S 7 ;<br>10 [0]<br>SeemsFEE |e l ||A|| ||I<br>\ N N a a A<br>10 [0] A DC 10 ms act Amn a<br>1 ms<br>SSSSE ESTE erat ea?im<br>10 [-1] Coe A NANA]a “AI<br>a Nd RAM LEE LAUTE LELL<br>Seiiiiiimmmaal<br>10 [-2] 10 [-1]<br>Ps jimmie iia ee 01 A<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS BSC059N04LS6** 

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240 15.0<br>4.5 V ; cece 3 V<br>5 V<br>SRRHREREREDFETT TTT ET TA 10 V ANBEEELETT, ABRBREDEET aa 3.5 V<br>POE ereT EEEPETTERS ocEEE<br>200 12.5<br>{ BeerA<br>PEoEECCE [PRE)] fi Eee eeeeee<br>SEARUGUE/ GE0/A0/GGRRREEEEEESEEON ME Souenaneeee GUUUEEEEEEEEEEEEEE<br>LETT TTT TVET TAL YUWe CCCCCEC CREZ| ECC eee eee eee<br>160 10.0 4 V<br>AST fee<br>COO / 4 V = | j=<br>/ Oe EH eH<br>. Poe > ann<br>Se 120 FULL SAT 7.5 ECOCCCCCee<br>EEREW/0//.ApG00 0RREEEUUEEREESU On OR STESSSGEESeeeseeseeee=o==> 4.5 V<br>COO ee 5 V<br>LITT AA ML TTT TTT ET ET POO<br>80 5.0<br>Snn///0a0nRERRRRERRBBESS= 3.5 V eee 10 V<br>FEEERRRREEREE<br>ff ane SUSESSEES000 0000000000 00080008<br>Peer EEE PPEE<br>LLM ev TT TTT EE TET E ECCECEEEE EEE eeeECE eeee e e e eeeee e eeeee<br>40 2.5<br>PACTeerY Y- Lt ooo 3 V  | eeeCOCECECE EEE EEE EEE Eee eee<br>Peer[LETTE 2.8 V ECCeee<br>0 |4 0.0 POPCEEE TET)<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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240 15.0<br>25 °C<br>PFE ee Pee ELLE | LC E TTLE E  EEL UALTTT Tey tttELLEtet et tetEE ttEEEtT LLtT<br>epee 175 °C a<br>200 etetee ee 12.5 a<br>cee| \<br>Se fpe fAPEt tT Pe NH es<br>TTT TTT TT TTT TE TT TA aCLLELLELEEELEL LER<br>160 10.0<br>PEEREEEEEEEEEEE| _——<br>EEA | -GEEEEEECEEEEEPSREE 175 °C<br>EEE) | EERE<br>— ELLE TTT TTT TT TT Ty ECECEE EE CACEC EEE EEE EEE<br>120 7.5<br>Boffo [8 Sennehessssss<br>EEEEECEEEEC ECAC} EEREEEE<br>PTT TT TTT PTET Te eT AT TT TT COP CCCSee<br>80 5.0 25 °C<br>cif ||<br>ee<br>EERE fo EERE EEE<br>PTT TTT TT TTT TT P EeCEEE eee eee<br>40 2.5<br>sf |<br>PETE ECACC LETT? TTT tT tet eT te tT et tT tet et yt fT<br>FET {T TTT TTT tT yA: VA Tt TT EP E PCECE CCEEE eee E e e e e ee eee e e e eee e<br>0 BERR EREEE EP 2c aR 0.0 PEELE EP EPP Tree Fee Ft<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS BSC059N04LS6** 

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2.0 2.4<br>TIT TTT PCOLEL EEE<br>PTTL LEE TET ETT TTT TET ET TTT EEE EE<br>PPC Lise<br>2.0<br>SERSERSOS0 000000000005 00000 SORELLE<br>1.6<br>SL COCRRSE<br>— VA, MSs MSs<br>© CCCP 1.6 CCAS<br>ive}nN32 1.2 PTTLPCE ELLE ALLLATEi /| EEL LELELELEELELELIECACC EN~~PSOEELELRNSNSNU EE 2500 µA L<br>wv > CAEP NEN<br>1.2<br>3 YY q<br>E5 0.8 POREaCCCECECEE EEL PITT TTT TTT TT TTT Ty TT 250 µA<br>2<br>COTE eee PLT<br>0.8<br>tte§ ECECCCECECEEECECCCECECCCELE ELLE ELE<br>0.4<br>TTT 0.4 LEE TET ETT TTT ET ET TTT EEE<br>ST LTE TET ETT TTT TET ET TTT EEE TE<br>ECECCCECECCCEE<br>PEELE EEL ECECCCECE LCLECEECCCEC EE ELEEE-LEE EEE<br>0.0 0.0<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>fl) SOA OVE sid) parameter:<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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10 [3] 10 [3]<br>NT }_ pAEEE<br>25 °C<br>25 °C, max<br>SIS Ciss EEE]<br>175 °C<br>Netoot :: PERPCCECECECEEEE ELEC<br>eee ' 175 °C, max PCEECCCEECCCEECCE<br>Nooo T e<br>SNE 10 [2] TE LLer<br>ToL EREEEEEEEE EEE EEO EEE<br>ECE EEE EEE EE SE ECE EEE<br>Coss<br>=5 10 [2] \ BNWT aepscietessaitiasssatcanittasats<br>aa PUTT TT ae TT<br>TONE eee ‘j<br>tt At EE 10 [1] BERR REEEEE SEER EE SEER EES<br>PTTSRKINGE GRR| EEE ELE EEL ELL eePITT TT Tit ts tteeeTeeeeeeee<br>10 [1] TPE NG~ Crss Ty] 10 [0] ALTEFCCCOCCCCEC L ELELLLL F ELEEEAWT GEL E EE E EELLLTTCPEEEE E<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>fs C =f( V DS V GS OV IMAZ—“—i‘“ f — I F=f( sSsSsSsSs—sYS V SD parameter T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

## **OptiMOS BSC059N04LS6** 

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**----- Start of picture text -----**<br>
10 [2] -_ EE EEE EEE 10 anAe<br>8 V<br>a | PEEP Eee A<br>20 V<br>a 32 V ‘<br>NT INS et |<br>ING aT<br>PONSTISSECEPTTIE 8<br>SW PETIT | cEEEEEEEEER EA<br>NU < LITT TIT TTT Et TT ttt tT Aw Tt Tt<br>No NU LTE TT EET eT eT Tey sy tt<br>10 [1]<br>HINTIN S E<br>KNEE $F ESS EF PPE Peele<br>po NT NTT TT TTT TT 6 EEL MHA4 OO<br>CEN NT No) Se ee<br><x=© P| | TINGENX TT TENTWO RETNY a> rTEECEEETAwA  TEL<br>25 °C<br>CTS)\ N EEREL<br>4<br>SN et N BERR CARE<br>10 [0] >» oN LTT TTT ttl vee tt ET TT<br>ee ee 100 °C BEE? 4 eee<br>PEE SHH BED A SR<br>rT TTT ETI TTT 2 LITA TET ET Eye ey ey ey eT ET<br>ee COA<br>150 °C<br>10 [-1] 0 AGERE EEE EEEEee<br>10 CTW [0] 10 [1] CHT 10 [2] 10 [3] | 0 AEESESEEE 2 4  SEES 6 8 10<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>


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44 LTT TT TTT ET TT TTT ety yt Ty yet yy yy<br>rT TTT TTT eet tye yee yy et ee<br>TTT TT TTT ET TTT ty eet yy Te ee ty [7<br>LTT TTT Tt te tT eet et et ee eee ee<br>43 TTT TTrT TT TTTTTT TTTeT TTTTT ytyt yeet ttt yyyTT Tery<br>rT TTT TTT TTT tty ttt tyr yt Tyee<br>TTT TT TTT ETT TT yet ey Ti Tye te TT<br>42 SeeTTT Ae<br>rT T TT T ITTT TEe T  TTTet yyytT e tyrr Tyeyi TETet ee [7<br>TTT TT TIT TET TTT tytetyYVE tT Tet Ty [7<br>rT TTT TTT eT Tt yt [yet]<br>S rT TTT TTT TTT TTT [triad]<br>= 41 TTTrTTT TT TTT ITTTIT TTT Tt TTT TATyt ATTTT<br>TTTLTT TTTITTLETT TET ET TT<br>LTT TTT TTT TTT yA ee ee et<br>TTT TTT TT eA<br>See ae<br>40 TTT TT TIT Ty ret eet ty TT ET ET TT<br>SRRAe<br>rTTT TT TITY TTT TTT ty yy ey et<br>TTT TT TITY TTT Tt yee yy yt Te TT TT<br>rTTTTTYVI<br>39<br>TTT TTT TTT Titty yt yt yey ty<br> TIWE TET TT Tt Tet yy et eee ey [7<br>rTTAFCCC VEE EEEEEE<br>rT IAT T IT T  Ee T T TTTTt yt T y e et etyyy Te e ee te [7<br>38 TTTTT TET Titty ttt ttt tt titty tty<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS BSC059N04LS6** 

Final Data Sheet 

10 

**OptiMOS BSC059N04LS6** 

Final Data Sheet 

11 

**OptiMOS BSC059N04LS6** 

## BSC059N04LS6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-07-31|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

12

Updated at April 29, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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