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BSC050N10NS5ATMA1
Power MOSFET, N Channel, 100 V, 100 A, 5000 µohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 136W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 5000µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.745 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC050N10NS5** ## **MOSFET** ## **OptiMOS[TM]** ## **Features** JEDEC47/20/22 |**Parameter**<br>1<br>Key ~~Performance~~|**Value**<br>~~Performance~~ ~~Parameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS|100|V| |_R_DS(on),max|5.0|mΩ| |_I_D|100|A| |_Q_oss|59|nC| |_Q_G(0V..10V)|49|nC| **==> picture [151 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5S, "ing,<br>Pro :<br>1 4<br>3<br>2 3 ; 2 1<br>4<br>S 1 8 D<br>S 2 7 D<br>T i l<br>S 3 | ( =) i 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode~~<br>~~|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~| |---|---|---|---| |BSC050N10NS5<br>~~Type/OrderingCode~~<br>~~|~~|PG-TDSON-8<br>~~|~~<br>~~|~~|050N10N5|-<br>~~Related Links~~| Final Data Sheet 1 **OptiMOS[TM] �5�Power-Transistor,�100�V BSC050N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.�2.2,��2019-11-14 **OptiMOS[TM] �5�Power-Transistor,�100�V BSC050N10NS5** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|100<br>80<br>16|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)| |Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_C=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|155|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|136<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W2)| |Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.7|1.1|K/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-| |Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.2,��2019-11-14 **OptiMOS[TM] �5�Power-Transistor,�100�V BSC050N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _Tj_ =25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=72µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|4.3<br>5.3|5.0<br>7.1|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=25A| |Gate resistance1)|_R_G|-|1.2|1.8|Ω|-| |Transconductance|_g_fs|50|100|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|3300|4300|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Output capacitance1)|_C_oss|-|490|640|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|20|35|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3.0Ω| |Rise time|_t_r|-|9|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3.0Ω| |Turn-off delay time|_t_d(off)|-|19|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3.0Ω| |Fall time|_t_f|-|7|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3.0Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|16|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|10|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|11|16|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|16|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|49|61|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|4.7|-|V|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|43|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge1)|_Q_oss|-|59|78|nC|_V_DD=50V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.2,��2019-11-14 4 **OptiMOS[TM] �5�Power-Transistor,�100�V BSC050N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|46|92|ns|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|68|136|nC|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.2,��2019-11-14 5 **OptiMOS[TM]** 5 Power-Transistor, 100 V **BSC050N10NS5** **==> picture [539 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 140 “K i | | | | 120 | | tf | ft | ft<br>120 T NE}<br>Atty} 100 E N<br>100<br>80<br>FEASTS] | EINE<br>Pf | N | ff | ee<br>80<br>= Pf | Alf ff '<br>60<br>60 Pf Ff | Ke] efff}<br>Hf | ft PNP 40 | | tf | TN| hfFY<br>el<br>40 Pf Ff ft | IN ena<br>20<br>20<br>yal ee ee<br>Pf Ff ff} | IN |<br>0 Tt ft ft TE rE EN 0 | | yt tt<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>[ P tot=f( T C) V I D=f( T C V GS ≥ T<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [1]<br>1 µs<br>PIE AC NTI S NE PC<br>10 [2] 10 µs<br>10 [0]<br>0.5<br>\N\ \ 100 µs H [| NN<br>10 [1] 1 ms 0.2<br>0.1<br>10 [-1]<br>10 ms 0.05<br>a A eee ete<br>10 [0] CCT CIN DC CCT ee 0.02<br>0.01<br>single pulse<br>EHH NT 10 [-2] sapeeeaa ATA A<br>10 [-1]<br>——-}--_—----| —----A\J —+,-— FACIE<br>10 [-2] CEI CECT 10 [-3] LUVIN LETRAEERIELIM<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS[TM] BSC050N10NS5** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 400 ee a eee 8 ee<br>5 V 5.5 V<br>360 ee ee A eee o e o e<br>7<br>ee) ee Art A 6 V<br>320 10 V 7 V<br>|ee| ee| ee| [| | [| [ | 6 EeeRt 4ASS ae eTSS SE SS EE<br>280 6 V<br>|Pf| [fAdA | ef| | | |] aeer 7 V<br>5<br>240 ee) ee eee See<br>10 V<br>< 200 —ee|| fff0[FfA nT| | |ee EE 4 eeaee—_—<br>160 5.5 V<br>3<br>2)LY f eaer_| PtI I EE<br>Wr PtEE<br>120<br>i 2 EH<br>80 | )//A ee ee ee 5 V ec<br>ae e e<br>fr | | e<br>40 0 Zi eee 1 I<br>0 yp2| | 6 |lhlhvdf|llcdTl TTT]eee 0 RtPtEEI EEEE<br>0 1 2 3 4 5 0 50 100 150 200 250 300 350 400<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 400 ee ee ee ee ee 160 a ee ee ee ee<br>360<br>a a es<br>ee ee a ee ee :<br>320 ee ee ee ee LE Z|<br>120<br>280<br>a a Y $+ i<br>240<br>|__| |_| +f }— es ae<br>ee ee ee ee ee /<br>200 80<br>eeA 4<br>160 jp _ Sf,<br>120 —ee ffee fe ST<br>40<br>[]<br>80 ee ol eS<br>a ee<br>40<br>en ee 175 °C e/a 25 °C ee |<br>ee= DHseTe A<br>0 0<br>0 2 4 6 8 0 20 40 60 80 100<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS[TM]** 5 Power-Transistor, 100 V **BSC050N10NS5** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 12 TT 4<br>ns ood<br>a OO —<br>10<br>A SSN<br>720 µA<br>sOTe ee 3 oSPINAY<br>8 A 72 µA SN<br>a a<br>a NON<br>e s e ~~ NN<br>6 ee max ee 2 > N\<br>sO 4 2 NX<br>es X<br>typ<br>4 e ete »\<br>=eee<br>os eee 1<br>OO<br>2 ns OO<br>OO<br>Tee eed<br>ns<br>OO<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br> **==> picture [530 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>——— : 25 °C aT= ==sss=s5=s==55=25=<br>25 °C, max<br>———— 175 °C PEER REEF<br>Ciss<br>Sree ee ee ee ee eee [|" 175 °C, max PETPOOP TT TTT Pt ey eTearer<br>SEIS Coss MUSH SRREU EA RRRRO ENED 2) ZA0RREED<br>10 [3] pe 10 [2]<br>—_—— |a| EE) ee e eeee<br>yy | | | TN eeee e e e<br>ac DA ee es _ SER seeeee ae<br>BS NC oo EO Oe<br>PN | [| | | [ | | ft] PELLET ee<br>10 [2] PINE 10 [1]<br>SS EEE————EE) FERREUe EEREEEE<br>aaNGss QC eeeSERFese eeeee<br>Crss<br>P| |, NET | tt FCCCOECCCCEPEELELEELAEEE<br>10 [1] Pf||eer TL 10 [0] TELL: EE EEE<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM] BSC050N10NS5** **==> picture [526 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>ee aaa eeanil OO ee 9 See /, 4<br>25 °C 8 50 V<br>SSOP aciull mani eee, aaa<br>NE TT<br>\ NeNUTTINll 7 20 V<br>80 V<br>6<br>\ \ NN [<br>10 [1] po NN T TTT 5 | elf<br>poNE<br>aa a NE TT TT 4 |} f- yt ] dtd<br>100 °C<br>FoIPT TTTINSoH 3 TYEE ETE<br>2<br>FFA PNT TALE EL EEE<br>150 °C<br>1<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j(start) V GS=f( Q gate ); I D =50A pulsed; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [148 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Diagram Gate charge waveforms<br>**----- End of picture text -----**<br> **==> picture [259 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 108 PTT Tee pe ee ee ee eee ee ee<br>Pp yt Pepe ee eee ee ee eee tp<br>Pp Pt Pepe ee ee eee ee eee a<br>( [| TT tye et ee ee et tT TA TTT<br>106 Pet pepe ee eee eee ar<br>[ft] tT Pee ee te Pee ee ET<br>eee eee ae<br>Ltt tee eee ee ee ee av<br>Pp pt Pe pee ee eee ee ee A<br>104 SeeeeeeeePp eeeeeeeeAeaeae e eeeee<br>Pp pt Pe pepe eee e ee eeeeeAaAee<br>102 Seeeee<br>eee ae eee<br>al eeeAe eee<br>|] ;Lt][i] TPP ee e et eyPdaee<br>100 ReeeeeSee eee 4eae eeeeee eeeeee eee<br>Pp Ae eeeeee<br>PT ytTTP Peppa PPA ee e e e ea e<br>98 PTTSeeTTT PA4 eeeeeeeeeaeeee<br>See Ae eee eeeeee<br>eeeee eee 4a eeeeee<br>[i i Tw TT Tt Pe te et PP et TT<br>[TI JA TT Tet ee et eet Pe<br>96 BPLt] type4eet eeeeeet eet eeeee<br>Pp pt eee eee eee eee eeea<br>Pp pt eee eee eee eee eeea<br>94 Ppp tee eee ee eee eee ea eae<br>PpPp ptpt eeeeee eeeeee eeeeee eee eee ee e eea<br>Pp pt eee eee eee eee eeea<br>Pp pt eee eee eee eee eeea<br>92<br>Be eee eee eee<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j =m I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS[TM] �5�Power-Transistor,�100�V BSC050N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **5�����Package�Outlines** **==> picture [123 x 43] intentionally omitted <==** |1.27<br>**MILLIMETERS**<br>0.90<br>1.20<br>0.34<br>0.54<br>0.03<br>0.23<br>3.88<br>4.31<br>0.45<br>0.71<br>**MIN.**<br>**MAX.**<br>0.45<br>0.69<br>0.15<br>0.35<br>3.90<br>4.40<br>4.80<br>5.35<br>5.70<br>6.10<br>5.90<br>6.42||Z8B00003332<br>|**.**| |---|---|---|---| |||**REVISION**<br>07|| ||0|1<br>**10:1**<br>**SCALE**<br>2|3mm| ||||| ||**EU**|**ROPEAN PROJE**|**CTION**| |||**ISSUE DATE**<br>06.06.2019|| ## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm** Final Data Sheet 10 Rev.�2.2,��2019-11-14 **OptiMOS[TM] BSC050N10NS5** **==> picture [69 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Dimension in mm<br>**----- End of picture text -----**<br> Final Data Sheet 11 **OptiMOS[TM] �5�Power-Transistor,�100�V BSC050N10NS5** **==> picture [120 x 53] intentionally omitted <==** **==> picture [491 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> PG-TDSON-8: Recommended Boardpads & Apertures<br>1.905 1.905<br>1.27 0.6 1.27 0.5<br>3x 3x<br>1.6<br>0.2 1.5<br>1.27 0.5 1.27 0.4<br>3x 3x<br>1.905 1.905<br>copper solder mask stencil apertures all dimensions in mm<br>0.8<br>0.2 0.75<br>3.325 2.9<br>4.455<br>1.5<br>5<br>7<br>2.863 2.863 80. 0.825<br>0.925<br>**----- End of picture text -----**<br> ## Figure 3 Outline Boardpads (TDSON-8), dimensions in mm Final Data Sheet 12 Rev.�2.2,��2019-11-14 OptiMOS[TM] 5 Power-Transistor , 100 V BSC050N10NS5 **==> picture [120 x 53] intentionally omitted <==** ## Revision History ## BSC050N10NS5 ## Revision: 2019-11-14, Rev. 2.2 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2018-05-15|Release of final version| |2.1|2019-10-31|Update package drawings| |2.2|2019-11-14|Update "Marking"| ## Trademarks All referenced product or service names and trademarks are the property of their respective owners. ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany © 2019 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. ## Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2, 2019-11-14 Final Data Sheet 13
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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