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BSC046N10NS3GATMA1
Power MOSFET, N Channel, 100 V, 100 A, 0.004 ohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Channel Type: N Channel
- Power Dissipation: 156W
- Drain Source On State Resistance: 0.004ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.13 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSC046N10NS3 G** ## **OptiMOS[TM] 3 Power-Transistor** ## **Product Summary** ## **Features** - Very low gate charge for high frequency applications - Optimized for dc-dc conversion - N-channel, normal level |VDS|100|V| |---|---|---| |RDS(on),max|4.6|mW| |ID|100|A| ||PG-TDSON-8|| - Excellent gate charge x _R_ DS(on) product (FOM) - Very low on-resistance _R_ DS(on) - 150 °C operating temperature - Pb-free lead plating; RoHS compliant - Qualified according to JEDEC[1)] for target application - Halogen-free according to IEC61249-2-21 |Type||Package|Marking| |---|---|---|---| |BSC046N10NS3|G|PG-TDSON-8|046N10NS| **Maximum ratings, at** _**T**_ j[=] **25 °C** , **unless otherwise specified** |**Maximum ratings,** **at** **_T_**<br>**25** **°C** **unless**<br>**,**<br>j[=]<br>,|**unless** **otherwise**|**otherwise** **specified**||| |---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**| |Continuous drain current|_I_D<br>~~a~~|_T_C=25 °C<br>~~ee~~|100<br>~~ee~~|A| |||_T_C=100 °C<br>~~ee~~|85<br>~~ee~~|| |||_T_A=25 °C,<br>_R_thJA=50 K/W2)<br>~~a~~|17.0<br>~~ee~~|| |Pulsed drain current3)|_I_D,pulse<br>~~a~~<br>~~a~~|_T_C=25 °C<br>~~a~~<br>~~ee~~|400<br>~~ee~~<br>~~ee~~|| |Avalanche energy, single pulse|_E_AS<br>~~a~~<br>~~a~~<br>~~a~~|_I_D=50 A,_R_GS=25W<br>~~a~~<br>~~ee~~<br>~~a~~|350<br>~~ee~~<br>~~ee~~<br>~~ee~~|mJ| |Gate source voltage|_V_GS<br>~~a ~~<br>~~a~~<br>~~a~~|~~ee~~<br>~~a~~<br>~~ee~~|±20<br>~~ee~~<br>~~ee~~<br>~~ee~~|V| |Power dissipation|_P_tot<br>~~a~~<br>~~a~~<br>~~a~~|_T_C=25 °C<br>~~a~~<br>~~ee~~<br>~~a~~|156<br>~~ee~~<br>~~ee~~<br>~~ee~~|W| |Operating and storage temperature|_T_j,_T_stg<br>~~a ~~<br>~~a~~|~~ee~~<br>~~a~~|-55 ... 150<br>~~ee~~<br>~~ee~~|°C| |IEC climatic category; DIN IEC 68-1|~~a~~<br>~~a ~~|~~a~~<br> ~~a~~|55/150/56<br>~~ee~~<br>~~ee~~|| **Rev. 2.0** **page 1** **2011-09-29** **BSC046N10NS3 G** |**Parameter**<br>**Thermal characteristics**<br>~~ee~~|**Symbol Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~| |---|---|---| |Thermal resistance, junction - case|_R_thJC<br>-<br>-<br>0.8|K/W| |Thermal resistance,|_R_thJA<br>minimal footprint<br>-<br>-<br>62|| |junction - ambient|6 cm2 cooling area2)<br>-<br>-<br>50|| |**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified|| |**Static characteristics**||| |Drain-source breakdown voltage<br>Gate threshold voltage<br>Zero gate voltage drain current|_V_(BR)DSS _V_GS=0 V,_I_D=1 mA<br>100<br>-<br>-<br>_V_GS(th)<br>_V_DS=_V_GS,_I_D=120 µA<br>2<br>2.7<br>3.5<br>_I_DSS<br>_V_DS=100 V,_V_GS=0 V,<br>_T_j=25 °C<br>-<br>0.01<br>1<br>_V_DS=100 V,_V_GS=0 V,<br>_T_j=125 °C<br>-<br>10<br>100<br>~~ee~~<br>~~**ee** ee~~<br>~~re~~<br>~~ee ee~~<br>~~can~~<br>~~tt~~|V<br>µA| |Gate-source leakage current|_I_GSS<br>_V_GS=20 V,_V_DS=0 V<br>-<br>1<br>100|nA| |Drain-source on-state resistance<br>Gate resistance<br>Transconductance|_R_DS(on)<br>_V_GS=10 V,_I_D=50 A<br>-<br>4<br>4.6<br>_V_GS=6 V,_I_D=25 A<br>-<br>5.1<br>8.6<br>_R_G<br>-<br>1.9<br>-<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=50 A<br>48<br>96<br>-<br>~~eee~~<br>~~ee~~<br>~~ee ee~~<br>~~pt~~|mW<br>W<br>S| ## 1)J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 **Rev. 2.0** **page 2** **2011-09-29** |**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~|**BSC046N10NS3 G**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Cinfineonee~~| |---|---|---|---|---|---|---|---| |**Dynamic characteristics**|||||||| |Input capacitance|_C_iss|iss||-|4500|-|pF| |Output capacitance|_C_oss|oss|_V_GS=0 V,_V_DS=50 V,<br>_f_=1 MHz|-|790|-|| |Reverse transfer capacitance|_C_rss|rss||-|30|-|| |Turn-on delay time|_t_d(on)|||-|16|-|ns| |Rise time|_t_r||_V_DD=50 V,_V_GS=10 V,|-|14|-|| |Turn-off delay time|_t_d(off)||_I_D=25 A,_R_G=1.6W|-|41|-|| |Fall time|_t_f|||-|11|-|| |Gate Charge Characteristics4)|||||||| |Gate to source charge|_Q_gs|gs||-|20|-|nC| |Gate to drain charge|_Q_gd|gd||-|11|-|| |Switching charge|_Q_sw|sw|_V_DD=50 V,_I_D=50 A,<br>_V_GS=0 to 10 V|-|19|-|| |Gate char**g**e total|_Q_|**g**||-|63|-|| |Gate plateau voltage|_V_plateau|plateau||-|4.4|-|V| |Output charge|_Q_oss|oss|_V_DD=50 V,_V_GS=0 V|-|84|-|nC| |**Reverse Diode**||||||| |---|---|---|---|---|---|---| |Diode continous forward current|_I_S|_T_C=25 °C|-|-|100|A| |Diode pulse current|_I_S,pulse||-|-|400|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=50 A,<br>_T_j=25 °C|-|1|1.2|V| |Reverse recovery time|_t_rr|_V_R=50 V,_I_F=25 A,<br>d_i_F/d_t_=100 A/µs|-|56|-|ns| |Reverse recovery charge|_Q_rr||-|101|-|nC| 4) See figure 16 for gate charge parameter definition **Rev. 2.0** **page 3** **2011-09-29** **BSC046N10NS3 G** ## **1 Power dissipation** _P_ tot=f( _T_ C) **==> picture [226 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>\<br>120<br>100 BN<br>80<br>60<br>40<br>20<br>: \<br>0<br>0 40 80 120 160<br>T C [°C]<br> [W]<br>tot<br>P<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p **==> picture [226 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>1 µs<br>10 µs<br>10 [2]<br>100 µs<br>Ay 1 ms<br>10 [1]<br>DC<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br> ## **2 Drain current** _I_ D=f( _T_ C); _V_ GS≥10 V **==> picture [225 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 40 80 120 160<br>T C [°C]<br> [A]<br>I D<br>**----- End of picture text -----**<br> ## **4 Max. transient thermal impedance** _Z_ thJC=f( _t_ p) parameter: _D_ = _t_ p/ _T_ **==> picture [225 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>10 [0]<br>0.5<br>0.2<br>0.1<br>10 [-1]<br>0.05<br>0.02<br>0.01<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t p [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Rev. 2.0** **page 4** **2011-09-29** **BSC046N10NS3 G** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on resistance** _I_ D=f(=f( _V_ DS);); _T_ j=25 °C=25 °C **==> picture [466 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> D=f(=f( V DS);); T j=25 °C=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>120 12<br>10 V 6 V<br>7 V —<br>5 V<br>100 10<br>4.5 V<br>80 8<br>5 V<br>60 6<br>6 V<br>4.5 V 7 V<br>40 4 10 V<br>20 2<br>e e e aaah<br>0 0<br>0 1 2 3 0 20 40 60 80 100<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>140 | 140<br>120 | 120<br>100 100<br>80 80<br>||<br>60 60<br>40 40<br>150 °C<br>25 °C<br>20 20<br>y<br>0 0<br>0 2 4 6 0 20 40 60 80 100<br>V GS [V] I D [A]<br>]<br>W<br>[m<br> [A]<br>I D<br>DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> parameter: _V_ GS ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j **Rev. 2.0** **2011-09-29** **page 5** **BSC046N10NS3 G** ## **9 Drain-source on-state resistance** ## **10 Typ. gate threshold voltage** **==> picture [470 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> R DS(on)=f( T j); I D=50 A; V GS=10 V V GS(th)=f( T j); V GS= V DS<br>parameter: I D<br>10 4<br>3.5<br>8<br>3<br>1200 µA<br>6 2.5 120 µA<br>J ~~<br>max<br>2<br>typ<br>4<br>1.5<br>1<br>2<br>0.5<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br>C =f( V DS); V GS=0 V; f =1 MHz I F=f( V SD)<br>parameter: T j<br>10 [4] 1000<br>Ciss<br>Coss<br>10 [3] 150 °C, 98%<br>25 °C<br>/<br>100<br>10 [2]<br>Crss<br>150 °C<br>ci 7 a<br>10<br>10 [1]<br>25 °C, 98%<br>10 [0] =fat 1 Uh<br>0 20 40 60 80 0 0.5 1 1.5 2<br>V DS [V] V SD [V]<br>]<br>W<br> [m [V]<br>DS(on) GS(th)<br>R V<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> **Rev. 2.0** **page 6** **2011-09-29** **BSC046N10NS3 G** ## **13 Avalanche characteristics** **==> picture [94 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> 14 Typ. gate charge<br>**----- End of picture text -----**<br> _V_ GS=f(=f( _Q_ gate);); _I_ D=50 A pulsed=50 A pulsed parameter: _V_ DD **==> picture [468 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> I AS=f( t AV); R GS=25 W V GS=f(=f( Q gate);); I D=50 A pulsed=50 A pulsed<br>parameter: T j(start) parameter: V DD<br>100 10<br>50 V<br>Se See 8 20 V 80 V<br>25 °C<br>100 °C<br>6<br>10<br>125 °C<br>4<br>2<br>1 N ie 0 Ht<br>1 10 100 1000 0 10 20 30 40 50 60 70<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V BR(DSS)=f( T j); I D=1 mA<br>110<br>V GS<br>Q g<br>105<br>Te<br>100<br>V<br>a gs(th)<br>eet<br>95<br>Q g(th) Q sw Q gate<br>90 HEE Q gs Q gd<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T j [°C]<br> [A] [V]<br>I AS V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> **Rev. 2.0** **2011-09-29** **page 7** **BSC046N10NS3 G** ## **Package Outline: PG-TDSON-8 (SuperSO8)** **Rev. 2.0** **page 8** **2011-09-29** **BSC046N10NS3 G** Dimensions in mm **Rev. 2.0** **page 9** **2011-09-29** **BSC046N10NS3 G** Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, **including without limitation** , **warranties of non** - **infringement of intellectual property rights** of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. **Rev. 2.0** **page 10** **2011-09-29**
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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