BSC046N02KSGAUMA1
Power MOSFET, N Channel, 20 V, 80 A, 3500 µohm, TDSON, Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV;
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 48W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 80A
- Drain Source On State Resistance: 3500µohm
- Gate Source Threshold Voltage Max: 950mV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.446 € |
| Current stock | 10+ |
| Lead time | 30 days |
|Cinfi €0<br>B C046 02K G|Cinfi €0<br>B C046 02K G|Cinfi €0<br>B C046 02K G|Cinfi €0<br>B C046 02K G|Cinfi €0<br>B C046 02K G|
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|W<br>Maximum ratings, at<br>=25 °C, unless otherwise specified|||||||
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|&<br>hermal characteristics<br>~~Thermalresistance,junction-case pf~~|||||||
|~~Thermalresistance,junction-case pf~~<br>Dversion,deviceonPCB|'U@8<br>~~pf~~<br>~~minimal~~|O\\Z<br>~~pfee~~|%<br>~~ee~~|%<br>~~eee~~|*&.<br>~~eee~~|A'L|
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|-'<br>~~Thermal resistance, junction - case pf~~<br>D version, device on PCB|'U@6<br>~~pf~~<br>~~minimal~~<br>~~fe~~|~~pfee~~<br>~~minimalfootprint=|~~<br>~~fecomo~~<br>~~|~~|<br>~~ee ~~<br>~~|=f~~<br>~~|~~<br>~~|~~|<br> ~~eee~~<br>~~=f~~<br>~~|~~<br>~~|~~|~~eee~~<br>~~6~~<br>~~|~~||
|||*<br>*#<br>~~minimal footprint = |~~<br>~~fecomo~~<br>~~|~~|%<br>~~| =f~~<br>~~|~~<br>~~|~~|%<br>~~=f~~<br>~~| ~~<br>~~|~~|,-<br> ~~6~~<br>~~|~~||
|W<br>~~fe como~~<br>~~|~~<br>~~| |~~<br>Electrical characteristics, at<br>=25 °C, unless otherwise specified|||||||
|%<br>tatic characteristics<br>~~Drain-sourcebreakdownvoltagePfsoy,=tmafofT~~|||||||
|~~Drain-sourcebreakdownvoltage~~<br>~~Gatethresholdvoltage~~|)"7H#9II <br>~~Pf~~<br>~~Pf~~|)=I<br>$9<br>~~Pfsoy,=tmafo~~<br>~~Pf~~<br>~~tof~~|*(<br>~~fo~~<br>~~tof|]~~|%<br>~~fT~~<br>~~|]~~|%<br>~~fT~~<br>~~|]~~|K|
|~~Drain-source breakdown voltage ~~<br>~~Gatethresholdvoltage~~<br>Zerogatevoltagedraincurrent|)=I"U#<br> ~~Pf~~<br>~~Pf~~<br>~~ey~~<br>~~/Ee=Core~~|)9I4)=I $9<br>~~Pf soy, =tma fo~~<br>~~Pf~~<br>~~tof~~<br>~~ey~~<br>~~/Ee=Core~~|(&/<br>~~fo ~~<br>~~tof|]~~<br>~~fe~~<br>~~/Ee=Core~~|(&1-<br> ~~fT~~<br>~~|]~~<br>~~fe~~<br>~~/Ee=Core~~|)&*<br>~~fT~~<br>~~|]~~<br>~~fe~~<br>~~/Ee=Core~~||
|~~Gate threshold voltage~~<br>Zero gate voltage drain current<br>~~Gate-sourceleakagecurrent~~|$9II<br>~~Pf~~<br>~~ey~~<br>~~/Ee=Core~~<br>~~Pf~~|)9I<br>)=I<br>(W<br>~~Pf~~<br>~~tof~~<br>~~ey~~<br>=25<br>°C<br>~~/Ee=Core~~|%<br>~~tof |]~~<br>~~fe~~<br>~~/Ee=Core~~|%<br>~~|]~~<br>~~fe~~<br>~~/Ee=Core~~|)<br>~~|]~~<br>~~fe~~<br>~~/Ee=Core~~|r6|
|||)9I<br>)=I<br>(W<br>~~ey~~<br>~~/Ee=Core~~<br>=125 °C<br>~~Pfstay,movfo~~|%<br>~~fe~~<br>~~/Ee=Core~~<br>~~fo~~|%<br>~~fe~~<br>~~/Ee=Core~~<br>~~fT~~|)((<br>~~fe~~<br>~~/Ee=Core~~<br>~~fT~~||
|~~Gate-sourceleakagecurrent~~<br>Drain-sourceon-stateresistance|$=II<br>~~/Ee=Core~~<br>~~Pf~~<br>~~|~~|)=I<br>)9I<br>~~/Ee=Core~~<br>~~Pfstay,movfo~~<br>~~|=asv,=a ff]~~|%<br>~~/Ee=Core~~<br>~~fo~~<br>~~ff]~~|%<br>~~/Ee=Core~~<br>~~fT~~<br>~~ff]~~|)((<br>~~/Ee=Core~~<br>~~fT~~<br>~~ff]~~|[6|
|~~Gate-source leakage current~~<br>Drain-source on-state resistance|'9I"\[#<br>~~Pf~~<br>~~|~~|)=I<br>$9<br>~~Pf stay, mov fo~~<br>~~|=asv,=a ff]~~|%<br>~~fo ~~<br>~~ff]~~|-&1<br> ~~fT~~<br>~~ff]~~|0&/<br>~~fT~~<br>~~ff]~~|Z"|
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|~~|~~<br>~~Device~~|'=<br>~~|jem~~<br>|~~jem~~<br>~~|~~<br>|%<br>~~|~~<br>|)&1<br>~~|~~|%<br>~~|~~|"|
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|+#<br>*#<br>~~| jem~~<br>~~|~~<br>~~| |~~<br>~~Device~~ on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.<br>See figure 3|||||||
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|Dynamic characteristics<br>~~Inputcapacitance~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Inputcapacitance~~<br>~~Outputcapacitance~~|!V__<br>~~P|~~<br>~~P|~~|)=I<br>)9I<br>+<br>" J<br>~~P|~~<br>~~P|~~ =4“OV,<br>=10, <br>~~P|~~|%<br>~~Pf]~~<br>~~Pf]~~|+)((<br>~~Pf]~~<br>~~Pf]~~|,)((<br>~~Pf]~~<br>~~Pf]~~|]<|
|~~Input capacitance~~<br>~~Outputcapacitance~~|!\__<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|1)(<br>~~Pf]~~<br>~~Pf]~~|)*((<br>~~Pf]~~<br>~~Pf]~~||
|~~Output capacitance~~<br>Reversetransfercapacitance<br>~~Turn-ondelaytime~~|8^__<br>~~P|~~<br>~~a~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|)-0<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|*)(<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~||
|~~Turn-ondelaytime~~|.Q"\[#<br>~~P|~~|)99<br>)=I<br>$9<br>'=<br>"<br>~~P|~~<br>~~P|~~ =30A,<br>=1.6|%<br>~~Pf]~~|)-<br>~~Pf]~~|%<br>~~Pf]~~|[_|
|~~Turn-on delay time~~<br>~~Turn-offdelaytime~~|.^<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|))/<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~||
|~~Turn-offdelaytime~~|.Q"\SS#<br>~~P|~~||%<br>~~Pf]~~|+,<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Turn-off delay time~~|.S<br>~~P|~~||%<br> ~~Pf]~~|.<br>~~Pf]~~|%<br>~~Pf]~~||
|#<br>Gate Char e Characteristics<br>~~Gatetosourcecharge~~<br>~~po~~<br>~~Pf~~|||||||
|~~Gatetosourcecharge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~|&T_<br>~~po~~<br>~~po~~|)99<br>$9<br>)=I<br>~~P|~~<br>=10V,<br>=30A, <br>~~P|~~<br>=0to4.5.V<br>~~P|~~<br>~~P|~~<br>~~pfey|~~|%<br>~~Pf~~<br>~~Pf~~|.&-<br>~~Pf~~<br>~~Pf~~|0&.<br>~~Pf~~<br>~~Pf~~|[8|
|~~Gate to source charge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~<br>~~Gatetodraincharge~~|&T"U#<br>~~po~~<br>~~po~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|+<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|+&1<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~||
|~~Gate charge at threshold~~<br>~~po~~<br>~~Gatetodraincharge~~<br>~~Switchingcharge~~|&TQ<br>~~po~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|,<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|-&1<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate to drain charge~~<br>~~Switchingcharge~~<br>~~Gatechargetotal~~|&_c<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|/<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|)(&.<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Switching charge~~<br>~~Gatechargetotal~~<br>~~Gateplateauvoltage~~|&T<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|*)<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|*/&.<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate charge total~~<br>~~Gateplateauvoltage~~<br>~~Gatechargetotal,sync.FET~~|)]YNRNa<br>~~P|~~<br>~~P|~~<br>~~pf~~||%<br>~~Pf]~~<br>~~Pf]~~<br>~~|pt~~|*&)<br>~~Pf]~~<br>~~Pf]~~<br>~~pt~~|%<br>~~Pf]~~<br>~~Pf]~~<br>~~pt~~|K|
|~~Gate plateau voltage~~<br>~~Gatechargetotal,sync.FET~~|&T"_e[P#<br>~~P|~~<br>~~pf~~|)9I<br>)=I<br>~~P|~~<br>~~pfey|~~<br>=0to4.5V|%<br>~~Pf]~~<br>~~|pt~~|)1<br>~~Pf]~~<br>~~pt~~|*-&+<br>~~Pf]~~<br>~~pt~~|[8|
|~~Gate charge total, sync. FET~~|&\__<br>~~pf~~|)99<br>)=I<br>~~pf ey |~~|%<br>~~| pt~~|)+<br>~~pt~~|%<br>~~pt~~||
|$ /0<br>everse Di<br>~~**Diode**continuousforwardcurrentfae|}+—~~|||||||
|~~**Diode**continuousforwardcurrent~~<br>~~pulsecurrent~~<br>~~po~~|$I<br>~~fae~~<br>~~po~~|(8<br>~~fae|~~<br>=25 °C|%<br>~~|}+—~~<br>~~Pf~~|%<br>~~}+—~~<br>~~Pf~~|-+<br>~~}+—~~<br>~~Pf~~|6|
|~~**Diode**continuousforwardcurrent~~<br>~~pulsecurrent~~<br>~~po~~|$I$]aY_R<br>~~fae~~<br>~~po~~||%<br>~~|}+—~~<br>~~Pf~~|%<br>~~}+—~~<br>~~Pf~~|*((<br>~~}+—~~<br>~~Pf~~||
|~~**Diode** continuous forward current ~~<br>~~pulse current~~<br>~~po~~|)I9<br> ~~fae~~<br>~~po~~|)=I<br>$<<br>(W<br>~~fae |~~<br>=25<br>°C|%<br>~~| }+—~~<br>~~Pf~~|(&1<br>~~}+—~~<br>~~Pf~~|)&*<br>~~}+—~~<br>~~Pf~~|K|
||&^^|)H<br>$<<br>Q-<'Q.<br>C<br>=100 A/|%|-0|%|[8|
|,#<br>See figure 16 for gate charge parameter definition|||||||
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →