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BSC0402NSATMA1
Power MOSFET, N Channel, 150 V, 80 A, 7900 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 139W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 80A
- Drain Source On State Resistance: 7900µohm
- Gate Source Threshold Voltage Max: 3.8V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.18 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC0402NS**
## **MOSFET OptiMOS[TM]** 5
## **Features**
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|**Parameter**<br>~~Table~~ 1<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|150|V|
|_R_DS(on),max|9.3|mΩ|
|_I_D|80|A|
|_Q_rr|60|nC|
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|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC0402NS<br>~~Type/OrderingCode |~~|PG-TDSON-8<br>~~|~~|0402NS<br>|-<br>|
Final Data Sheet
1
**OptiMOS[TM] 5�Power-Transistor,�150�V BSC0402NS**
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.0,��2019-12-16
**OptiMOS[TM] 5�Power-Transistor,�150�V BSC0402NS**
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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|80<br>55|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|320|A|_T_A=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|130|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|139|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.54|0.9|°C/W|-|
|Thermal resistance, junction - ambient,<br>6 cm² cooling area3)|_R_thJA|-|-|50|°C/W|-|
> 1) See Diagram 3 for more detailed information
> 2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Final Data Sheet
3
Rev.�2.0,��2019-12-16
**OptiMOS[TM] 5�Power-Transistor,�150�V BSC0402NS**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|150|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|3.0|3.8|4.6|V|_V_DS=_V_GS,_I_D=107µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=120V,_V_GS=0V,_T_j=25°C<br>_V_DS=120V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|7.9<br>8.7|9.3<br>10.5|mΩ|_V_GS=10V,_I_D=40A<br>_V_GS=8V,_I_D=20A|
|Gate resistance|_R_G|-|1|1.5|Ω|-|
|Transconductance1)|_g_fs|32|64|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=40A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2400|-|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|600|-|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|15|-|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|14|-|ns|_V_DD=75V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|5|-|ns|_V_DD=75V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=75V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|4|-|ns|_V_DD=75V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|14|-|nC|_V_DD=75V,_I_D=40A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|7.0|-|nC|_V_DD=75V,_I_D=40A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|13.4|-|nC|_V_DD=75V,_I_D=40A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|33|-|nC|_V_DD=75V,_I_D=40A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=75V,_I_D=40A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|91|-|nC|_V_DS=75V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.0,��2019-12-16
4
**OptiMOS[TM] 5�Power-Transistor,�150�V BSC0402NS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|80|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|320|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.86|1.2|V|_V_GS=0V,_I_F=40A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|51|-|ns|_V_R=75V,_I_F=40A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|60|-|nC|_V_R=75V,_I_F=40A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2019-12-16
5
**OptiMOS[TM] BSC0402NS**
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150 100<br>F ERRERS | EERE<br>125 O Py I N O| EE EEE OOELL FrrFrrrrrtrtertrtlelet| | | | | | | ft | tt tt et etieeT<br>80<br>ONL SEEe l<br>SSN SE SE<br>100 a ptt tt | tft tT tt tt<br>a es eeee ee<br>60<br>SSSI SEE EEN<br>= a = SEEK<br>= 75 rt tT [ | te tf Ty TE tT tT ey et z= rot LPELLELLINCOLELL<br>ee a<br>40<br>SSSI SEES<br>50 Pt tT tf ft et te te ER rPrrerererrereretrerereel yeti<br>PF] ito | tt EEN EE sO<br>ooo IT eee ee<br>20<br>25 ee SE EEEEEE<br>ee ee ee ee ee<br>——————————e EEE NE<br>+++ + +--+ + SH 4] a<br>0 rtrFrftrtrrrertfttrrpretytelina 0 eeeeee ee eee e e eeee ee<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>T C [°C] T C [°C]<br>0 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [3] 10 [1]<br>single pulse<br>0.01<br>1 µs 0.02<br>0.05<br>10 [2] 10 µs 0.1<br>0.2<br>10 [0] 0.5<br>NEN 100 µs Ee<br>10 [1] ON Au) Se tel il af<br>10 [-1]<br>2 Seo (6 CO<br>10 [0]<br>[i 1 ms —— oe ail<br>cS | W<br>TT 10 ms<br>EN NingETE See ELT a ma<br>DC 10 [-2]<br>aes NY] TN AI TAI CTI Nl<br>10 [-1]<br>SS ee ee 7 TTT)<br>SSS CNMI CCCI CTI TT<br>a UTICA<br>10 [-2] 10 [-3]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>[ =25°C; =0;paramete: ——idEC“( ™ sSCéi rca,<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC0402NS**
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300 15<br>LAW 10 V 9 V eee 8 V 14 ee<br>Sannelf) ae eea ee<br>240 13<br>LEY1, EEL 12 SSSee eee<br>180 LAA EEL 11 PFSSS| [ | | [| [| | | [| 7 V<br>< Bay Ae 7 V 10 oo =<br>8 V<br>120 a fZane| | || £ 9 |SSS| |EE| eee || LT<br>9 V<br>KML =<br>/ ELE LL. 8 a<br>A EEL SSSa ee So 10 V<br>60 7<br>ALLL/ EEL 6 SSSee eee<br>0 Aye L ELT EEL 5 PF|SSE|| [[ || || [|[| [[| || || [[||<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 20 40 60 80 100<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
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100 24<br>CCLOLL<br>a ELL ELL LLL<br>|<br>21<br>80 eee | ee FECEREECPFECCRCEELEELELELELLLLL AN E EEEELELEEEEE E EELEEE<br>PCCCETPC a eS LL<br>| | 18 FCCCBRSPRELELLEELELELLLI<br>60 150 °C<br>SECC ss<br>< & 15 Poceyceoccocee<br>FCCC ELELELELELLLLLae<br>FRCOACE<br>40 FRC EEEEEE<br>GEER ee<br>12<br>COCCHI) ERCCOO OCACEC EEE EEE<br>COCCI) EEE EESCEEEe<br>20<br>| SRE 9<br>Pf | 150 °C |} P| | FCCCi E OEE SSE CE<br>25 °C<br>25 °C<br>0 P|] | J| ft || 6 F OSSRCCCECEEEEE EEE C EELEEELLee CESSFJ<br>0 2 4 6 8 10 5 6 7 8 9 10<br>V GS [V] V GS [V]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC0402NS**
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10 [4] 10 [3]<br>=e SSS RRS<br>ee 4 25 °C FEC EEE EEEEEE EEE EEEEELE E ELEEE<br>REESEEREEEEEE. Ciss oH (| 25 °C, max150 °C ERRSaSSSSESRSRERERERERE<br>RCEEEEREERRER EERE EERE i 150 °C, max POPPE<br>PPE ee |<br>10 [3]<br>S5p= Coss ST ee<br>10 [2]<br>BEE S552 S=o = SS=eESSEaeeeer TLL PAL<br>NET EEEEEEEEEEEETT TT TTT ETT TTEPR TT TE ET ET TT EEEEEEEEEEEEEEREEEE E EECE E eaEE CEE<br>>See SUTAIIT<br>10 [2] pt} wtf fj} jj ff tt tt ft} tt = [ |<br>a=" AAAI VAAHVARIBOITOOAIS Poamisasesnstontsergiycotter‘ /ontts<br>TTT NN 10 [1] |<br>Heeeeceeeeeceeeeed | (TITIAN<br>Crss<br>10 [1] RRRLEELARRR ERE ERE ERE ERE ERE EREPSE EETT EEETT SEReeAFEEEER FERREAdV0 FERREee eeEREOCQe eeeE EERE REE<br>PRE EEEEE FCCECCEC ECF<br>POOP PEPER EEE EE<br>PEEEEECCEECCLCEEEEEeEEPPAEE TTT ETEHT EELLLLLELE<br>10 [0] 10 [0]<br>0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>Po) C =f( V DS V GS OV f TMA [V] —<—sSSSCS s I S F=f( V ss SD paramestor T j wal<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] BSC0402NS**
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**----- Start of picture text -----**<br>
10 [2] 10<br>—— oo SSeee<br>a 30 ae<br>a | 75 tT ot | | | tT | | TAs]<br>e e ee 1 120 ee ee ee eee<br>NENT IE 8 a<br>25 °C<br>ANUS ST SERREEEE HA HAE<br>10 [1]<br>a ASTIN TTT SS<br>ESNaeS)eSNT 6 iee7, eeeee, eeeeeee<br>100 °C<br>= NT CHS S ee e e<br>=< ty ft NEY = es es e e<br>4<br>RSA | E E A<br>10 [0] 125 °C<br>IIL LUTE NUT | EEE<br>eeSSSa Seeis | EEE 2<br>YT ee | | Yi {| | | | | | | | | f{ |<br> TTT TE TTT fe |] yt tt Ey 4<br>NN AEE<br>10 [-1] 0 Yi | | | | | | {| | | ft ft ff<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25 30 35<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =40A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
## **Diagram Gate charge waveforms**
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160 TTT TTT TTT TTT Ty t ttt tt tt tt<br>LTrT tTTerrytT tT tttrr trytt ttrrrte te ee ee TT<br>158 LTTTTTryTTT TryTrt rrTry TrtPr trrt rr<br>rT tT tT tT ttt tt te et te ee ee ETT TAT<br>TTT TTT Try Try rr tr ry<br>BERR<br>156<br>TTT Ae<br>TTT tT tT ttt tt te tte tte EE EE YE TT<br>LT TTT Try Try Trt trtPA<br>154 rT tTTerrytT tT ttt Trttetrrte t erte eeerrr eyeA tT<br>BRR Ae<br>>= LTrT TTTerryTPPTrtyetrryt Prytt AT<br>BERR<br>152<br>TTT ae eee<br>TTT tT ttt te tet te tee Tt tT<br>LT TTT TTT rTP yt rr tr rr<br>150 rTTTT T TTerTTT t T TrtttTTTttTtTyrertA yA TTtryrr<br>LT TET tT TTT yt tr tr<br>rT TTT ttt yA Tt tt te<br>148 TTTLTrT [Terry] tT TTTTTT TTAyi ttTTTttrrte terree tt TT<br>TTT TT YT TTT Try tr rr<br>146 Bn?TTTBED 4IAT2420SEe Tryeeeeeere<br>BRM<br>144 TTT TTT TTT tT rTP rT ry Pett tt tt<br>-80 -40 0 40 80 120 160<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] BSC0402NS**
Final Data Sheet
10
**OptiMOS[TM] BSC0402NS**
## BSC0402NS
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-12-16|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at March 12, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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