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Illustrative purposes only
BSC037N08NS5ATMA1
Power MOSFET, N Channel, 80 V, 100 A, 3700 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 114W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 3700µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.0 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MOSFET **OptiMOS[TM] OptiMOS[TM]** 5 BSC037N08NS5 Final ## **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V ## **Features** **==> picture [6 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> 1)<br>**----- End of picture text -----**<br> |**Parameter**|**Value**|**Unit**| |---|---|---| |_V_DS|80|V| |_R_DS(on),max|3.7|mΩ| |_I_D|100|A| |_Q_oss|56|nC| |_Q_G(0V..10V)|46|nC| **==> picture [151 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5, Mine<br>“Person<br>1 4<br>3<br>2 2<br>3 1<br>4<br>S 1S 2 T i l 8 D7 D<br>S 3 1 I h 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> ||**Package**|**Marking**|| |---|---|---|---| |BSC037N08NS5|PG-TDSON-8|037N08NS|-| 1) J-STD20 and JESD22 Final Data Sheet 2 **OptiMOS[TM] 5�Power-Transistor,�80�V** BSC037N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.�2.0,��2014-12-17 **OptiMOS[TM] 5�Power-Transistor,�80�V** BSC037N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|100<br>84<br>22|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=50K/W1)| |Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_C=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|140|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|114<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56| ## **3�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.7|1.1|K/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-| |Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See figure 3 for more detailed information > 3) See figure 13 for more detailed information Final Data Sheet Rev.�2.0,��2014-12-17 4 **OptiMOS[TM] 5�Power-Transistor,�80�V** BSC037N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **4�����Electrical�characteristics** ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|2.2|3|3.8|V|_V_DS=_V_GS,_I_D=72µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|3.4<br>4.4|3.7<br>5.3|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=25A| |Gate resistance1)|_R_G|-|1.3|2.0|Ω|-| |Transconductance|_g_fs|47|94|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A| |**Table5Dynamiccharacteristics**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|3200|4200|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Output capacitance1)|_C_oss|-|530|690|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|25|44|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|14|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|10|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|26|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|7|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| 1) Defined by design. Not subject to production test Final Data Sheet Rev.�2.0,��2014-12-17 5 BSC037N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **OptiMOS[TM] 5�Power-Transistor,�80�V** ## **Table�6�����Gate�charge�characteristics[1)]** |**Table6Gatechargecharacte**|**ristics1)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|15|-|nC|_V_DD=40V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|9.0|-|nC|_V_DD=40V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge2)|_Q_gd|-|10|15|nC|_V_DD=40V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|16|-|nC|_V_DD=40V,_I_D=50A,_V_GS=0to10V| |Gate charge total2)|_Q_g|-|46|58|nC|_V_DD=40V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|4.8|-|V|_V_DD=40V,_I_D=50A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|40|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge2)|_Q_oss|-|56|74|nC|_V_DD=40V,_V_GS=0V| ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime2)|_t_rr|-|41|83|ns|_V_R=40V,_I_F=50A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge2)|_Q_rr|-|36|72|nC|_V_R=40V,_I_F=50A,d_i_F/d_t_=100A/µs| > 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test Final Data Sheet 6 Rev.�2.0,��2014-12-17 **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V **==> picture [538 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 120 — | 120 tf | |<br>100 N e ee ee 100 ee<br>| | ff N<br>—t[N e e eee<br>80 80<br>60 60<br>|| [\t fT | | | | | Ae]<br>40 40<br>20 20<br>| | | | PN | | | | |<br>0 0<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>——TCTCTCTCT P tot=f( T C) C I D=f( TCTCTTCTCYP T C V GS ≥<br>FV —C—SOSOC*‘S<br>10 [3] 10 [1]<br>Pe oT | VV<br>1 µs<br>10 [2] C SN ST 10 µs 10 [0] a a ||<br>0.5<br>100 µs<br>SHANE EHH Fee 0.2 ot<br>1 ms<br>0.1<br>10 [1] ONIN Sean = 10 [-1] ma iss cAI<br>10 ms<br>0.05<br>DC 0.02<br>a ee i 7 AMO | |<br>0.01<br>EP RAN KE ET | es)<br>10 [0] TI CCITT] 10 [-2] single pulse<br>pTETN ATTN LT TT TT TET<br>eeNN I | LTTCLT TTTLETTPETTITTLET LEHI PTEE<br>10 [-1] 10 [-3]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 7 ## **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V **==> picture [528 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 400 a 4 8 | | J] JT TFT JT TT fF JT JT JT 7 JT JT JT]<br>5 V 5.5 V 6 V<br>360 fe es = = S-=4-=-=—=== a<br>ee ee ey 7 a<br>10 V 7 V<br>320<br>6 a A 72 eG 7 A GO<br>280 PE | Aaa eee<br>ee aSe ”,ieeeCe s,s SeeQO<br>5 7 V<br>240 i Yn A ae<br>e<br>|of foo 6 V eee |e Tee<br>200 4<br>10 V<br>ee ee SSS<br>160<br>3<br>STATS. ———<br>J a ee ee eee a OS I QS GN QO<br>120 5.5 V<br>ee SS | 2 SeeSESE<br>80 o/s SE Ee<br>= 5 V es<br>1<br>40 Zea =<br>| ae eeeFt ———<br>FICE LLL LLL =<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [528 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 400 ee ee ee ee ee 2 140 a<br>360<br>esa es ee ee ee A 120 es ee a<br>a sO A) a<br>320<br>280 Hf}es ff} fA 100 eee<br>es es ee ee ee ee J<br>SS ee ae<br>240<br>ee eee<br>eee 80<br>—< 200 | |)ppa fe Z<br>a Of le OK<br>a | 60 — YY<br>160<br>eees eeee<br>120 Ss es sO 40 4eee eee<br>80 rf<br>es es es ey 20 0<br>40<br>Ee fof ff<br>150 °C 25 °C<br>0 = or 444Lop 0 aee ee ee<br>0 2 4 6 8 0 20 40 60 80 100<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V **==> picture [528 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 7 So te} OL 5 EEE EE<br>6<br>4<br>ane<br>pepe | PO<br>5<br>P TTE TTT max terrean fet PE EE<br>3 720 µA<br>4 COT aeee) RSS<br>typ<br>COC | — 72 µA<br>3<br>eet tTje 2 LE eeES<br>PCCP PEEP rer<br>2<br>eee | Es<br>Leet<br>1<br>1 PTTSEREEEEEEEEEETT PTT [Terry)] ey ey<br>a |) 6LEEEEEETT TTT<br>a<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br> **==> picture [527 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>25 °C<br>150 °C<br>a a ee ee \ 25 °C, max Tf ff | PT PT PT<br>E———————a Ciss ee e ee ee o i P 150 °C, max e apeea<br>10 [3] e— tt t tt) ) 10 [2] e r<br>pe NSSa Coss — CRESS a SAS<br>2 p\p ooPt Ltt ttt tb eT | | TE ET TT<br>Ne ee ee eee PTT ttt ta ele ETT EET TT<br>PIN<br>10 [2] 10 [1]<br>| Et ty Ue<br>———— SSS SS<br>ee a ee oe A<br>Po NT a eee<br>Crss<br>> PSE Ltt tt ta yg | TE TT TE ET TT<br>ee eee PELL Edel tire TE ET TE EET<br>10 [1] 10 [0]<br>0 ee 20 40 ee 60 80 ee 0.0 ne 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 9 ## **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V **==> picture [526 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] pT TE Ty TT TT TTT) 10 40 V 7<br>EHa eetH ee 9 Plt | | | dt iyy VA<br>16 V 64 V<br>a 25 °C 8 eer, aoe<br>ANTS CTT Y/,<br>NT NTIS anil 7 Pt tf ff LAE]<br>CON NTSC | yf<br>6<br>100 °C<br>10 [1] aPeCUMINGeeSES[ SCCCC SSEDNEC 54 aay a 7 @nef -<br>125 °C<br>——--}—--Nee AN NH 3 || Yif ft ft ff ft fd<br>oT FAB NS TPAS 2 TAA tf ff ff fd<br>ICI<br>NAM | 1 pq qo<br>UIE<br>10 [0] 0<br>mM} Yt TT Ey tet<br>10 [0] 10 [1] LUI 10 [2] EN 10 | [3] 0 7 10 20 30 40 50<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>pT Gate charge waveforms<br>86 PEt TTT Ey yy Ve<br>84<br>PE Et [TAT]<br>Seeeenne7000 ;<br>82<br>ett itty<br>PEEL<br>80<br>VAT TE<br>COA<br>78<br>ZT TTT /<br>76<br>PEE TTT TEE Ty » |.<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> **==> picture [265 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> pT Gate charge waveforms<br>**----- End of picture text -----**<br> Final Data Sheet 10 **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V **==> picture [85 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> EUROPEAN PROJECTION<br>**----- End of picture text -----**<br> Final Data Sheet 11 **OptiMOS[TM]** 5 Power-Transistor, BSC037N08NS5 80 V BSC037N08NS5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2014-12-17|Release of final version| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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