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Illustrative purposes only
BSC035N10NS5ATMA1
Power MOSFET, N Channel, 100 V, 100 A, 3500 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 156W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 3500µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.11 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC035N10NS5**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
## 1)
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|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|100|V|
|_R_DS(on),max|3.5|mΩ|
|_I_D|100|A|
|_Q_oss|91|nC|
|_Q_G(0V..10V)|70|nC|
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S 1S 2 T a 8 D7 D<br>S 3 6 D<br>ld i<br>G 4 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC035N10NS5<br>~~Type/OrderingCode |~~|PG-TDSON-8<br>~~|~~|035N10NS<br>|-<br>|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] ��5�Power-Transistor,�100�V BSC035N10NS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.�2.1,��2016-09-07
**OptiMOS[TM] ��5�Power-Transistor,�100�V BSC035N10NS5**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|100<br>95<br>19|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|398|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|156<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.5|0.8|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.1,��2016-09-07
**OptiMOS[TM] ��5�Power-Transistor,�100�V BSC035N10NS5**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=115µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.9<br>3.5|3.5<br>4.7|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=25A|
|Gate resistance1)|_R_G|-|1.5|2.3|Ω|-|
|Transconductance|_g_fs|65|130|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|5000|6500|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|770|1000|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|34|60|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|22|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|13|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|47|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|15|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|22|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|14|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|14|21|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|23|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|70|87|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.5|-|V|_V_DD=50V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|61|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|91|121|nC|_V_DD=50V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.1,��2016-09-07
4
**OptiMOS[TM] ��5�Power-Transistor,�100�V BSC035N10NS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.8|1.1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|62|124|ns|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|122|244|nC|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.1,��2016-09-07
5
**OptiMOS[TM] BSC035N10NS5**
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Final Data Sheet
6
**OptiMOS[TM] BSC035N10NS5**
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Final Data Sheet
7
**OptiMOS[TM] BSC035N10NS5**
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Final Data Sheet
8
**OptiMOS[TM] BSC035N10NS5**
**==> picture [526 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 10<br>bESes Ee s 25 °C EHH 9 ELLE /<br>SL EEL LEA<br>PCC Y<br>8<br>Pt | TIEN EENSCU 100 °C TTLESill TELE EL ELL AAY) Ey<br>50 V<br>7<br>COT SIN | EEE PT<br>10 [1]<br>II ONIN /p<br>SSS ate 125 °C 6 THELIALLLL<br>20 V 80 V<br>Eee SSRs EO 5 TEL TLE LAAL ET Ey<br>x ee ee L /)<br>Pt LTE EEE TE 4 a ae<br>10 [0] IN<br>LA UN | 3 a<br>| TTT CE EEE TT 21 —/TLE ELT ELE<br>ee| LEHI, EEE ellET) /JiLL<br>10 [-1] 0 LEE ELE<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70 80<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
## Gate charge waveforms ~~Diagram 15: Drain-source breakdown[valig]~~[e—————_|[——]
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108<br>TT LELELLLLLL }<br>106 ee cs<br>PCE TA Q,<br>104 FCEL ELTA<br>FCEL ETAT<br>| 102 EEPerT<br>= TPL ALLL<br>100 TC OTTA ELL<br>CCA ELL<br>98 TALL<br>CAEL ELE /<br>96 ACL EEL /<br>PEELE EEL ee Quen<br>94 CELE EEE 2. 2.<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>S V BR(DSS)=f( T j I D |<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] BSC035N10NS5**
**==> picture [85 x 14] intentionally omitted <==**
**----- Start of picture text -----**<br>
EUROPEAN PROJECTION<br>**----- End of picture text -----**<br>
Final Data Sheet
10
**OptiMOS[TM] BSC035N10NS5**
Final Data Sheet
11
**OptiMOS[TM] BSC035N10NS5**
## BSC035N10NS5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2014-12-17|Release of final version|
|2.1|2016-09-07|Update Avalanche Energy|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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