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BSC0302LSATMA1
Power MOSFET, N Channel, 120 V, 99 A, 6500 µohm, PG-TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 2
- Qualification: -
- Power Dissipation: 156W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TDSON
- Drain Source Voltage Vds: 120V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 99A
- Drain Source On State Resistance: 6500µohm
- Gate Source Threshold Voltage Max: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.16 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC0302LS**
## **MOSFET**
## **OptiMOS**
## **Features**
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|**Parameter**<br>~~Table 1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|120|V|
|_R_DS(on),max|8.0|mΩ|
|_I_D|99|A|
|_Q_oss|79|nC|
|_Q_G(0V..10V)|79|nC|
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S 1 8 D<br>S 2 7 D<br>S 3 | ( =) r T 6 D<br>G 4 L NG rf 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSC0302LS<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TDSON-8<br>~~**|**~~|0302LS|-|
Final Data Sheet
1
**OptiMOS[TM�] 2�Power-Transistor,�120�V BSC0302LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.�2.0,��2019-12-02
**OptiMOS[TM�] 2�Power-Transistor,�120�V BSC0302LS**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|99<br>77<br>12|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_A=25°C,<br>_R_THJA=45°C/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|394|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|377|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|156|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.45|0.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|18|°C/W|-|
|Thermal resistance, junction - ambient,<br>minimal footprint|_R_thJA|-|-|62|°C/W|-|
|Thermal resistance, juntion - ambient,<br>6 cm² cooling area2)|_R_thJA|-|-|45|°C/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2019-12-02
**OptiMOS[TM�] 2�Power-Transistor,�120�V BSC0302LS**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|120|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.85|2.4|V|_V_DS=_V_GS,_I_D=112µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.01<br>1|1<br>100|µA|_V_DS=120V,_V_GS=0V,_T_j=25°C<br>_V_DS=120V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|6.5<br>7.8|8.0<br>9.5|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=25A|
|Gate resistance1)|_R_G|-|0.85|-|Ω|-|
|Transconductance|_g_fs|60|120|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|5600|7400|pF|_V_GS=0V,_V_DS=60V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|590|770|pF|_V_GS=0V,_V_DS=60V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|28|42|pF|_V_GS=0V,_V_DS=60V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=60V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|9|-|ns|_V_DD=60V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|37|-|ns|_V_DD=60V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|13|-|ns|_V_DD=60V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|17.5|-|nC|_V_DD=60V,_I_D=25A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|12.9|-|nC|_V_DD=60V,_I_D=25A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|20.1|-|nC|_V_DD=60V,_I_D=25A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|79|-|nC|_V_DD=60V,_I_D=25A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|3.1|-|V|_V_DD=60V,_I_D=25A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|79|-|nC|_V_DD=60V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.0,��2019-12-02
4
**OptiMOS[TM�] 2�Power-Transistor,�120�V BSC0302LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|109|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|394|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.88|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|107|-|ns|_V_R=60V,_I_F=25A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|220|-|nC|_V_R=60V,_I_F=25A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2019-12-02
5
**OptiMOS BSC0302LS**
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Final Data Sheet
6
**OptiMOS BSC0302LS**
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Final Data Sheet
7
**OptiMOS BSC0302LS**
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Final Data Sheet
8
**OptiMOS BSC0302LS**
**==> picture [526 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 10<br>24 V<br>60 V<br>et (== EEE Erte<br>|| NET NEE TTT PTT TTT 1 96 V P o<br>pfSN| ANT ANETTAENGET 8 ee A ee, CA<br>25 °C<br>10 [1]<br>100 °C<br>a 6 | | | | | | | | le] ] fl lt<br><x= aeea ee S nDe/aAnn nn<br>CC SST oeeeee 4<br>4<br>125 °C<br>10 [0] EINE EU LUTNI |Sog| | |nnstt tT yaseeeeeeeeTT<br>=== Saas 2 00/ .eeee<br>oe 2 y A<br>ee0 ee2)<br>LUI 2000S<br>10 [-1] 0 Yi | | | | | ¢ | PP<br>ECU PTT AREER<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70 80<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
OT **Diagram Gate charge waveforms**
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**----- Start of picture text -----**<br>
131 PIT EET TTT TTT ETT ET ET<br>129 PTT E ETT TTT ET EE EET<br>SEIT TTT TT ET<br>127 PITT ETT TT TTT ET ET<br>LETTE ETT TTT TTT TT<br>125 PITT TTT TT TTT ET ArT<br>HITT TT TTT TTT TTA<br>123<br>s= HHA<br>121 TTTTHT TET TARE TT<br>PITT TTT A TT<br>119 PTET TTTTTT ET ET<br>ET<br>ITE ITT [ETT][ TAT] TT AT<br>117<br>PITT TT MTT EE<br>LETT PAT ET<br>115<br>TTT PITT TT EE EE<br>PITAL TE EE ET<br>113<br>BE2 400000000<br>-80 -40 0 40 80 120 160<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS BSC0302LS**
Final Data Sheet
10
**OptiMOS BSC0302LS**
**==> picture [69 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
Dimension in mm<br>**----- End of picture text -----**<br>
Final Data Sheet
11
**OptiMOS BSC0302LS**
Final Data Sheet
12
**OptiMOS BSC0302LS**
## BSC0302LS
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-12-02|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
13
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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