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BSC028N06NSSCATMA1
Power MOSFET, N Channel, 60 V, 137 A, 2300 µohm, WSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS SC
- Qualification: -
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 100W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0023ohm
- Transistor Case Style: WSON
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 137A
- Drain Source On State Resistance: 2300µohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.25 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC028N06NSSC**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
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PG-WSON-8-2<br>tab<br>5<br>6<br>7<br>8<br>4<br>3<br>2<br>1<br>**----- End of picture text -----**<br>
|**Parameter**<br>Fully qualified<br>~~Table~~ ~~1~~|**Parameter**<br>Fully qualified<br>~~Table~~ ~~1~~|**Value**<br>**Unit**<br>qualified according to JEDEC for Industrial Applications<br>~~Key Performance Parameters~~|**Value**<br>**Unit**<br>qualified according to JEDEC for Industrial Applications<br>~~Key Performance Parameters~~|**Value**<br>**Unit**<br>qualified according to JEDEC for Industrial Applications<br>~~Key Performance Parameters~~|
|---|---|---|---|---|
||_V_DS||60|V|
||_R_DS(on),max||2.8|mΩ|
||_I_D||137|A|
||_Q_oss||43|nC|
||_Q_G(0..10V)||37|nC|
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Drain<br>Pin 5-8<br>Gate<br>Pin 4<br>eh<br>Source<br>Pin 1-3, tab<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC028N06NSSC<br>~~Type/OrderingCode |~~|PG-WSON-8-2<br>~~|~~|028N06SC<br>|-<br>|
Final Data Sheet
1
**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NSSC**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.0,��2019-11-19
**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NSSC**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|137<br>97<br>24|A|_V_GS=10V,_T_C=25°C1)<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=50K/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|548|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|100|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|100<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W3)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.9|1.5|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|0.7|1.4|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2019-11-19
**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NSSC**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=50µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.5<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.3<br>3.3|2.8<br>4.2|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=12.5A|
|Gate resistance|_R_G|-|1.3|1.95|Ω|-|
|Transconductance|_g_fs|50|100|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
|**Table5Dynamiccharacteristics1)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|2025|2700|3375|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance|_C_oss|495|660|825|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|8.5|28|56|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|22|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|38|57|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|19|38|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|8|16|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|9|12|16.5|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|6|8|11|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|5|7|10.3|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|8|12|17|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total|_Q_g|31|37|49|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|4.0|4.6|5.2|V|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|27|33|43|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge|_Q_oss|32|43|54|nC|_V_DD=30V,_V_GS=0V|
> 1) Defined by design. Not subject to production test
2) See figure 16 for gate charge parameter definition. Defined by design, not subject to production test
Final Data Sheet
Rev.�2.0,��2019-11-19
4
## **OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NSSC**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|77|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|548|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.88|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|14|35|56|ns|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|14|29|58|nC|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.0,��2019-11-19
5
**OptiMOS[TM]** Power-Transistor, 60 V **BSC028N06NSSC**
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Final Data Sheet
6
**OptiMOS[TM]** Power-Transistor, 60 V **BSC028N06NSSC**
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Final Data Sheet
7
**OptiMOS[TM] BSC028N06NSSC**
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Final Data Sheet
8
**OptiMOS[TM] BSC028N06NSSC**
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**----- Start of picture text -----**<br>
10 [2] 12<br>a ee<br>30 V<br>NCI S CEee 10 | | tt tT ft<br>NS IN ~ aS Y,<br>150 °C 100 °C 25 °C 12 V<br>48 V<br>HBSS EH Of<br>10 [1] NSTix Pei | 8 EET OT<br>aSat ee n/a<br>ee ee Se /<br>egx eea aSSee ee 6 ffV fe<br>St e/| a<br>10 [0] SanataTUNNELS)esti eri |) 4 O[f | /f |e|g| | |<br>a aee ee ee ee ee 2 | IF}I Jf | fo ff<br>coCo cor | fo<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>Diagram Gate charge waveforms<br>70<br>ee<br>PF | | | | [| | | tt tt<br>P| | | | | ft tt Ves<br>66 ee O<br>a<br>a<br>ee<br>62 P| | | | | ee ee<br>S | [| f ff | ep tT dt |<br>a A cel<br>Ptpoet<br>eee eee<br>58 aT TE TT<br>PF | | | | [| | | tt tt<br>P| | | | | ft tt<br>ee<br>54<br>aa<br>50 P|a ee| | ee| | | | | ft eeeeft ft Rom | Q,.| QewQa Q gate<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NSSC**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
**==> picture [439 x 357] intentionally omitted <==**
||||
|---|---|---|
|**DIMENSION**|**MILLIMETERS**<br>MIN.<br>MAX.||
|||MAX.|
|**A**|-|0.75|
|**A1**|-|0.05|
|**b**|0.35|0.45|
|**c**|0.203||
|**D**|4.95|5.05|
|**D1**|4.11|4.31|
|**D2**|3.03||
|**E**|5.95|6.05|
|**E1**|3.66|3.86|
|**E2**|4.11||
|**e**|1.27||
|**L1**|0.675|0.775|
|**L2**|0.625|0.825|
|**aaa**|0.05||
|**ddd**|0.10||
||||
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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00184589<br>REVISION<br>03<br>SCALE 10:1<br>0 1 2mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>03.06.2019<br>**----- End of picture text -----**<br>
## **Figure�1�����Outline�PG-WSON-8-2,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.0,��2019-11-19
**OptiMOS[TM] BSC028N06NSSC**
## BSC028N06NSSC
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-11-19|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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