BSC028N06NSATMA1

Power MOSFET, N Channel, 60 V, 100 A, 2800 µohm, TDSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 83W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TDSON
Drain Source Voltage Vds: 60V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 2800µohm
Gate Source Threshold Voltage Max: 2.8V

Delivery and price
Units per pack	3000
Price	1.16 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC028N06NS** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

1) 

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|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|60|V|
|_R_DS(on),max|2.8|mΩ|
|_I_D|132|A|
|_Q_oss|43|nC|
|_Q_G(0..10V)|37|nC|



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S 1S 2 T i l 8 D7 D<br>S 3 6 D<br>I K EDA<br>G 4 5 D<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC028N06NS<br>~~Type/OrderingCode |~~|PG-TDSON-8<br>~~|~~|028N06NS<br>|-<br>|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.5,��2020-09-21 

**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|132<br>83<br>23|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|528|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|100|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|83<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W3)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.9|1.5|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.5,��2020-09-21 

**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=50µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.5<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.5<br>3.4|2.8<br>4.2|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=12.5A|
|Gate resistance1)|_R_G|-|1.3|1.95|Ω|-|
|Transconductance|_g_fs|50|100|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|2025|2700|3375|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|495|660|825|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|8.5|28|56|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|22|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|38|57|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|19|38|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|8|16|ns|_V_DD=30V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|9|12|16.5|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|6|8|11|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|5|7|10.3|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|8|12|17|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total|_Q_g|31|37|49|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|4.0|4.6|5.2|V|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|27|33|43|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge|_Q_oss|32|43|54|nC|_V_DD=30V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition. Defined by design, not subject to production test 

Final Data Sheet 

Rev.�2.5,��2020-09-21 

4 

**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|528|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|14|35|56|ns|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|14|29|58|nC|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.5,��2020-09-21 

5 

**OptiMOS[TM] BSC028N06NS** 

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Final Data Sheet 

6 

**OptiMOS[TM] BSC028N06NS** 

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Final Data Sheet 

7 

**OptiMOS[TM] BSC028N06NS** 

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10 [4] 10 [3]<br>25 °C<br>a a | L]L 25 °C, max PiERRTTEERETT tT tT yt tt tt tt<br>a i 150 °C EEREREE<br>a i 150 °C, max POCA eer<br>Ciss<br>mT AHGAATAAANAUTONADE@S@RIRLUIDE<br>10 [3] aae 10 [2]<br>FERRE ESSEREEEE<br>————annCe, a TTTeeeeTENDee AecAONNee<br>ac XK | Coss ee| —— _ LTT TTT  TTT TTT ttttT ttt ett eet it TATvt  TTTtT ytveTTTT TTTT<br>FNS SSFt<br>~-KEE<br>10 [2] PIA  ]} 10 [1] Ul<br>esa pttttEEEREEEREEERA  titiA i AtiieEERE EHtit tttHFtpEEE]<br>aa eeDe | SeeSER eeeeesee eee<br>a COCO<br>ee ee PET<br>Crss<br>| |Ef) ET<br>10 [1] 10 [0]<br>0 20 40 60 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] BSC028N06NS** 

**==> picture [526 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] 12<br>a A 0ee<br>Ee Pf | | | ft J fl<br>a eeee<br>30 V<br>ENT N DN S 10 | | tf | ft | | |<br>{TI | ><br>NE 125 °C NSENT 100 °C 25 °C | ITI 12 V<br>48 V<br>A Noi | pM] e/a<br>10 [1] 8<br>aSe eeee ee ff<br>— aSSa SeSe ee ee, Aejf<br>6<br><x Pot LTTE fT TTT NENT a p<br>|<br>a A<br>10 [0] a a at 4 af/f e<br>eeA ee0 eeA A eeeA a a Vij e<br>aa a ee ee ee ee ee 2 | IF}vy, Jf | fot ft<br>CoCo cos | fo<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t AV [us] Q gate [nc]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>| Diagram Gate charge waveforms<br>70 TT | [TT tT tT tT tT tT yt ey<br>Pot | ft yp ye<br>Pt | ft yt yp tt Ves<br>66 Pt | tf tt te O<br>Pt | tT tt tT tT et 9<br>Pt | [| | tT tT tT et ee<br>Pt | ft ft ty tt tT tee<br>62 ee ee eeeee<br>S pf f | | |e<br>A cel<br>Pt pT tT ET<br>58 pmmT | TT TTtT tT tTtT tTtT retetht ee<br>Pot | ft yp ye<br>Pt | ft yt yp tt<br>54 PtPt || tftT tttt tetT tT et<br>Pt | [| | tT tT tT et ee Rom | | Qey Q gate<br>Pt | [| | tT tT tT et ee<br>50 Pt | tf ft tT tT et ee Qos Qos<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


~~|~~ **Diagram Gate charge waveforms** 

Final Data Sheet 

9 

**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

**==> picture [123 x 43] intentionally omitted <==**

|1.27<br>**MILLIMETERS**<br>0.90<br>1.20<br>0.34<br>0.54<br>0.03<br>0.23<br>3.88<br>4.31<br>0.45<br>0.71<br>**MIN.**<br>**MAX.**<br>0.45<br>0.69<br>0.15<br>0.35<br>3.90<br>4.40<br>4.80<br>5.35<br>5.70<br>6.10<br>5.90<br>6.42||Z8B00003332<br>|**.**|
|---|---|---|---|
|||**REVISION**<br>07||
||0|1<br>**10:1**<br>**SCALE**<br>2|3mm|
|||||
||**EU**|**ROPEAN PROJE**|**CTION**|
|||**ISSUE DATE**<br>06.06.2019||



## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.5,��2020-09-21 

**OptiMOS[TM] �Power-Transistor,�60�V BSC028N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

**==> picture [491 x 298] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TDSON-8: Recommended Boardpads & Apertures<br>1.905 1.905<br>1.27 0.6 1.27 0.5<br>3x 3x<br>1.6<br>0.2 1.5<br>1.27 0.5 1.27 0.4<br>3x 3x<br>1.905 1.905<br>copper solder mask stencil apertures all dimensions in mm<br>0.8<br>0.2 0.75<br>3.325 2.9<br>4.455<br>1.5<br>5<br>7<br>2.863 2.863 80. 0.825<br>0.925<br>**----- End of picture text -----**<br>


## Figure 2     Outline Boardpads (TDSON-8), dimensions in mm 

Final Data Sheet 

11 

Rev.�2.5,��2020-09-21 

OptiMOS[TM] Power-Transistor , 60 V BSC028N06NS 

**==> picture [69 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimension in mm<br>**----- End of picture text -----**<br>


Figure 3     Outline Tape (TDSON-8) 

Rev. 2.5,  2020-09-21 

Final Data Sheet 

12 

OptiMOS[TM] Power-Transistor , 60 V BSC028N06NS 

**==> picture [120 x 53] intentionally omitted <==**

## Revision History 

## BSC028N06NS 

## Revision: 2020-09-21, Rev. 2.5 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.3|2014-11-10|Added RthJC_typ, updated outline and footprint drawings, insert footnote "Defined by<br>design...."|
|2.4|2020-02-04|Update package drawings|
|2.5|2020-09-21|Update current rating|



## Trademarks 

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## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com 

## Published by 

Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved. 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.5,  2020-09-21 

Final Data Sheet 

13

Updated at April 29, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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