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BSC027N10NS5ATMA1
Power MOSFET, N Channel, 100 V, 100 A, 2700 µohm, TSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 214W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 2700µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.22 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC027N10NS5** EE Gifineon ## **MOSFET** ## **OptiMOS[TM]** ## **Features** **==> picture [145 x 76] intentionally omitted <==** **----- Start of picture text -----**<br> PG-TSON-8-3<br>8<br>7 5<br>6 6<br>5 7 8<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>**----- End of picture text -----**<br> |**Parameter**<br>~~Table 1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS|100|V| |_R_DS(on),max|2.7|mΩ| |_I_D|194|A| |_Q_oss|114|nC| |_Q_G(0V..10V)|89|nC| **==> picture [154 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> S 1 8 D<br>S 2 7 D<br>S 3 | ( =) i 6 D<br>G 4 L a 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links| |---|---|---|---| |BSC027N10NS5<br>~~Type/OrderingCode |~~|PG-TSON-8-3<br>~~|~~|027N10N<br>|-<br>| Final Data Sheet 1 **OptiMOS[TM] �Power-Transistor,�100�V BSC027N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.�2.1,��2020-11-26 **OptiMOS[TM] �Power-Transistor,�100�V BSC027N10NS5** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|194<br>137<br>23|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W2)| |Pulsed drain current3)|_ID,pulse_|-|-|776|A|_T_C=25°C| |Avalanche energy, single pulse4)|_E_AS|-|-|641|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|214<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W3)| |Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56| ## **2�����Thermal�characteristics** at� _Tj_ =25�°C,�unless�otherwise�specified ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.4|0.7|K/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-| |Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-| > 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. > 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 3) See Diagram 3 for more detailed information > 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.1,��2020-11-26 **OptiMOS[TM] �Power-Transistor,�100�V BSC027N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=146µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|5<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|2.1<br>2.6|2.7<br>3.4|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=25A| |Gate resistance1)|_R_G|-|1.7|2.5|Ω|-| |Transconductance|_g_fs|75|150|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|6300|8200|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Output capacitance1)|_C_oss|-|970|1300|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|43|75|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|13|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|14|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|41|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|18|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|28|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|19|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|18|27|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|27|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|89|111|nC|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|4.4|-|V|_V_DD=50V,_I_D=50A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|77|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge1)|_Q_oss|-|114|152|nC|_V_DD=50V,_V_GS=0V| > 1) Defined by design. Not subject to production test > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.1,��2020-11-26 4 **OptiMOS[TM] �Power-Transistor,�100�V BSC027N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|162|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|776|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.83|1.1|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|56|112|ns|_V_R=50V,_I_F=_50A_,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|89|178|nC|_V_R=50V,_I_F=_50A_,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test Final Data Sheet Rev.�2.1,��2020-11-26 5 **OptiMOS[TM]** Power-Transistor, 100 V **BSC027N10NS5** **==> picture [539 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 240 200<br>a ee ee |__]<br>220<br>aoep s 175 EN LL<br>200<br>a ee ee<br>180 PoE UN 150 \<br>160 Pot NN<br>a 125 \<br>= 140 a ee Ne<br>=. 120 Pota ee ONee 100 \<br>100<br>BEERS CECCTIN<br>ee ee 75 \<br>80 a TD<br>a ee<br>60 a Deeeee 50 ee<br>SS ee)<br>40<br>Pota [NN] eeen eee<br>ee 25<br>20<br>a ee<br>0 PN 0<br>0 KEES} 25 50 75 100 125 150 175 200 0 LEE 25 50 LET 75 100 125 150 EL 175 200<br>T C [°C] T C [°C]<br>CT P tot=f( T C) C I D=f( T C V GS ≥ F?<br>VV —“COSCCCTCC‘*”r<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [1]<br>1 µs<br>Se QS | FF<br>PANETT TNT TPE a<br>10 µs<br>10 [2] ee 10 [0] a<br>100 µs 0.5<br>1 ms<br>NEN ys rT TT tI<br>ABE ea 10 ms Nt _ EE 0.2 o_o<br>10 [1] 10 [-1]<br>DC 0.1<br>0.05<br>NAN | = ieee 740 |<br>0.02<br>PTT PN ATT mi SE eet eee<br>10 [0] AA 10 [-2] 0.01 ANN<br>single pulse<br>a ee | PA<br>a eal a<br>a a A | a<br>10 [-1] 10 [-3]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 ## **OptiMOS[TM]** Power-Transistor, 100 V **BSC027N10NS5** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 400 5<br>7 V<br>5 V<br>360 P|. 10 V fe 6 V Ae |e |e | TEP TEE LIL 5.5 V<br>||jf[[ /fyPt | tT tt |PT| ftTT[ TATP T ;T tTtT tT ypttTTttTy<br>320 | | | AeA | tT | | TT 4 ri tT] YET TET, Pe yy<br>5.5 V<br>280 ee) ae FlTTIJATLT ITT TTA TT<br>ee haa pl iy tt tt i tery tt<br>| Of em est | | TE Tl PT er tT |<br>240 3 6 V<br>| ff ee ae<br>< 200 |i)| f/f |eee| | | eeedd le eea 7 V an<br>160 0/2fffee eee eee 2 ———$$a 10 V a<br>yf | 5 V Pt et et tt tt EET Tf<br>120 Ae Pt et et tt ttt EE TT fT<br>Wy | PT TT TT ye yt ttre EE TT Ty<br>80 2 (AR eee eee 1 Pi TT TT et ttre ETT Ty<br>0 Ae ee eee eee PT eT TT et ttre EE TT Ty<br>40 IFyipi || [|| || fltf tt| || PtPt etet etTt tttt tttt EEEE TtTt<br>0 Pi | | | | | ft | ft | ft 0 PTT tT Tt tt tt EE ET Tt<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 400 300<br>a ee | a a a<br>a<br>360<br>250<br>320 a a | | ee<br>280<br>200<br>a a | | se<br>240<br>< 200 a a a a a | ee 150 ce<br>eere a ee eeeeee AAa<br>160 eeee| ee ee 100 ee<br>120 a a | | | A<br>80<br>50<br>|| 175 °C | | EEE<br>25 °C<br>40<br>| a<br>0 0<br>0 2 4 6 8 0 40 80 120 160 200<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 7 **==> picture [531 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> OptiMOS [TM]<br>Power-Transistor, 100 V Cinfi neon<br>BSC027N10NS5<br>7 Pt[ | tt || tt yt tl 4 Ree<br>6<br>Pt | t ti] | tt tt tl =<br>1460 µA<br>3<br>5 FESCEEEHECE | BRST<br>PEEP ET Ss<br>COP} EEL 146 µA RAL LE<br>4<br>max<br>FERRE<br>2<br>ee NOAA<br>3 CPP eee COUTTS<br>Saeaer<br>typ<br>2 pp bet em-ac|ane! GSES EHEERANN\<br>career TT 1 fTedie<br>Teri]| | | |<br>1 Trees} EE<br>0 Pt ]ttttt __ T_T| tt ttTtfl 0 PET TP PPP Py yy<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>pg e 25 °C e<br>Ciss 25 °C, max<br>A ee a [| 175 °C r | | | llr A |<br>ee——— \ = 175 °C, max r bw | | | Jv“Yyi | | fy<br>Seed PC A<br>Coss<br>10 [3] 10 [2]<br>PEt NET EL} EE y E4<br>——————————— =Sa=S 52.25A 2==—<br>. oer Se<br>S ~ Ne oe! ee ee eee eee<br>CON CELE Cecchi<br>10 [2] 10 [1]<br>——— —————<br>Crss<br>|a ee+--+ —f}-____—<br>a| a eea esa eeee eeee ee e s ee eeeee<br>TTT COCCCEOERPL EEL<br>10 [1] Pt LEE EEE 10 [0] eee eeeeeeee<br>0 20 40 60 80 100 0.0 0.5 1.0 1.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM]** Power-Transistor,[100][ V] **BSC027N10NS5** **==> picture [528 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>a 9 V 50 V<br>EES SAS 25 °C S 8 THT TEELL LT 20 V EPAL 80 V<br>PT TLE NETTIENN VA,<br>CTIN\ 100 °C | 7 /}<br>10 [1]<br>PS PST | LEE ArT<br>= EEa eeeESEee 6 /.Yy<br>150 °C<br>x TH TH > 5 LTT TELA<br>LT tT TTT EET Nt a Ly<br>On<br>4<br>10 [0] LUI i a f A<br>LAM UN | 3<br>YTa TTT eeTT eeTTT 21 TALL/ TEER<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60 80 100<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [259 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>a<br>108<br>SEPP<br>a<br>se<br>106<br>Cee<br>a<br>104 ee<br>— Peepers<br>A<br>102<br>CePA<br>100 a<br>a<br>98 CAAA<br>27 ee<br>96<br>Zo<br>a<br>94 se<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> ## **Diagram Gate charge waveforms** ~~Po~~ Final Data Sheet 9 **OptiMOS[TM] �Power-Transistor,�100�V BSC027N10NS5** **==> picture [120 x 53] intentionally omitted <==** ## **5�����Package�Outlines** **==> picture [375 x 280] intentionally omitted <==** **==> picture [168 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A - 1.10<br>b 0.34 0.54<br>b1 - 0.05<br>c 0.20<br>D 4.90 5.10<br>D1 4.25 4.45<br>E 5.90 6.10<br>E1 4.00 4.20<br>E2 3.14 3.34<br>E3 0.20 0.40<br>e 1.27<br>K2 (0.37)<br>L 0.60 0.80<br>L1 0.43 0.63<br>L2 (0.25)<br>**----- End of picture text -----**<br> **==> picture [88 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B00187559<br>REVISION<br>01<br>SCALE 10:1<br>0 1 2mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>14.12.2017<br>**----- End of picture text -----**<br> **Figure�1�����Outline�PG-TSON-8-3,�dimensions�in�mm/inches** Final Data Sheet 10 Rev.�2.1,��2020-11-26 **OptiMOS[TM] BSC027N10NS5** ## BSC027N10NS5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2018-02-28|Release of final version| |2.1|2020-11-26|Update current rating| ## **Trademarks** ## **erratum@infineon.com** ## **Information** ## **Warnings** Final Data Sheet 11
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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