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BSC025N08LS5ATMA1
Power MOSFET, N Channel, 80 V, 100 A, 2500 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 156W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 156W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0021ohm
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 2500µohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.35 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC025N08LS5** ES Giineon
## **MOSFET OptiMOS** ™ 5 Power-Transistor, 80 V
## **Features**
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PG-TDSON-8<br>8 5<br>7 6 5 has 6 a 7 8<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>**----- End of picture text -----**<br>
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||||||||
|---|---|---|---|---|---|---|
|Drain|
|Pin 5-8|
|Table|1|Key|Performance|Parameters|
|Parameter|Value|Unit|Gate|*1|
|Pin 4|
|V|DS|80|V|
|Source|
|R|DS(on),max|2.5|m|Ω|*1: Internal body diode|Pin 1-3|
|I|D|187|A|
|Q|oss|88|nC|
|Q|G(0V..4.5V)|44|nC|
**----- End of picture text -----**<br>
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||||||
|---|---|---|---|---|
|Type|Package|Marking|
|/|Ordering|Code|||Reelated|
|BSC025N08LS5|PG-TDSON-8|025N08LS|-|
**----- End of picture text -----**<br>
Final Data Sheet
1
**OptiMOS[TM�] 5�Power-Transistor,�80�V BSC025N08LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.�2.4,��2022-09-22
**OptiMOS[TM�] 5�Power-Transistor,�80�V BSC025N08LS5**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|187<br>141<br>24|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50°C/W2)|
|Pulsed drain current3)|_I_D,pulse|-|-|748|A|_T_A=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|370|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|156<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.5|0.8|°C/W|-|
|Device on PCB,<br>6 cm² cooling area2)|_R_thJA|-|-|50|°C/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.4,��2022-09-22
**OptiMOS[TM�] 5�Power-Transistor,�80�V BSC025N08LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=115µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.1<br>2.6|2.5<br>3.3|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=25A|
|Gate resistance1)|_R_G|-|1.7|2.6|Ω|-|
|Transconductance|_g_fs|70|140|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|5800|7500|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|840|1100|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|34|60|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|10.4|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|10.3|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|51|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|18.6|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|16|-|nC|_V_DD=40V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|10|-|nC|_V_DD=40V,_I_D=50A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|15|22|nC|_V_DD=40V,_I_D=50A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|21|-|nC|_V_DD=40V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|44|55|nC|_V_DD=40V,_I_D=50A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.8|-|V|_V_DD=40V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|80|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|88|117|nC|_V_DS=40V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.4,��2022-09-22
4
**OptiMOS[TM�] 5�Power-Transistor,�80�V BSC025N08LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|110|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|748|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.85|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|44|87|ns|_V_R=40V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|47|93|nC|_V_R=40V,_I_F=50A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.4,��2022-09-22
5
**OptiMOS BSC025N08LS5**
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Final Data Sheet
6
> **OptiMOS** ™ **BSC025N08LS5**
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Final Data Sheet
7
**OptiMOS BSC025N08LS5**
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2.0 3<br>PCC<br>PCCEEEEEEEEE EE<br>CCE<br>1.6 SSS<br>(So)oS PEERAf|<br>2<br>© 1.2 ECCEEEEECEE Ee ——a 1150 µA<br>ee eee Ee<br>s Cee oS<br>8 OCC | ~—~_<br>@ 0.8 COC eee 115 µA ~~<br>EBee ceeCeeTO 1 =eNN<br>CCE<br>0.4<br>PCEECEECE<br>PCEECEEEEEE EE<br>PCEEEEEEEEEPEEEE<br>PCCEPCEEEEE EEE<br>0.0 0<br>-80 -40 0 40 80 120 160 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>
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Final Data Sheet
8
**OptiMOS BSC025N08LS5**
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**----- Start of picture text -----**<br>
10 [2] -—}—-- HH HHH EHF 10 —— 16 V<br>a ee ee ee 9 F 40 V T oL EERE<br>64 V<br>Yr | | dT TTT = 7 4,<br>rrr a th 8 & f ey ty ty | ge<br>SS | | || Jp<br>LEN EAN NTT 7 Ty ELL TEL EL AAR<br>25 °C<br>PCTTMINENIT STD) epee<br>6<br>100 °C<br>z 10 [1] OTM 125 °C NuuN UM 5 fe<br>EEE Ww NES Je EEE EEA<br>YrCT| CT| CTit TTTESfT EEEETNG TN TNTSE E NTT T TT 4 TTT LE) LYALLZ, Ly<br>PE NEE ENGT Oaaeee Zee<br>| 3 Ys<br>Nl L AT LE.<br>2<br>ET EE EEN /<br>1<br>COTM<br>10 [0] CTE | 0 pACESeseetetttth<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70 80<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>Diagram Gate charge waveforms<br>86<br>84<br>CECA “<br>82<br>e fl ilii7 itt<br>PEEL<br>80<br>CCEA AACLEEEE<br>78<br>PALL ELL EE f<br>76 PEEEEELE EEL EL 7 2.<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM�] 5�Power-Transistor,�80�V BSC025N08LS5**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
|PACKAGE - GROU<br>NUMBER:|**PG-TDSON-8-U08**<br>P|**PG-TDSON-8-U08**<br>P|
|---|---|---|
|**DIMENSIONS**|**MILLIMETERS**||
||MIN.|MAX.|
|**A**|0.90|1.20|
|**b**|0.34|0.54|
|**c**|0.15|0.35|
|**D**|4.80|5.35|
|**D1**<br>|3.90<br>|4.40<br>|
|**D2**|0.00|0.22|
|**E**|5.70|6.10|
|**E1**|4.05<br>4.25||
|**e**|1.27<br>||
|**L**|0.45|0.65|
|**L1**|0.45|0.65|
## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.4,��2022-09-22
**OptiMOS BSC025N08LS5**
Final Data Sheet
11
**OptiMOS BSC025N08LS5**
## BSC025N08LS5
## Previous Revision
|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2016-10-14|Release of final version|
|2.1|2016-10-25|Update Rg and EAS|
|2.2|2019-05-10|Update Diagrams 5, 8, and 9|
|2.3|2020-12-15|Update current rating and Vsd typ|
|2.4|2022-09-22|Update outline drawing|
**Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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