BSC022N04LS6ATMA1

Power MOSFET, N Channel, 40 V, 100 A, 2200 µohm, TDSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS 6
Qualification: -
Power Dissipation: 79W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TDSON
Drain Source Voltage Vds: 40V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 2200µohm
Gate Source Threshold Voltage Max: 2.3V

Delivery and price
Units per pack	3000
Price	0.657 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC022N04LS6** 

## **MOSFET** 

## **OptiMOS** 

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8<br>7<br>Features 6<br>5<br>GES ~<br>¢ Optimized for synchronous application “Agee,<br>+ Very low on-resistance R DS(on) 1 = 5<br>2 6<br>*¢ Superior100% avalanchethermal testedresistance 3 4 acS 7 8<br>¢ N-channel<br>¢ Pb-free lead plating; ROHS compliant 4 3<br>* Halogen-free according to IEC61249-2-21 2<br>1<br>¢ 175 °C rated<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>S 1S 2 TL i LJ]l 8 D7 D<br>S 3 6 D<br>Table 1 Key Performance Parameters | | f F<br>Parameter Value Unit<br>G 4 5 D<br>V DS 40 V<br>R DS(on),max 2.2 m Ω<br>I D 100 A<br>Q oss 31 nC<br>Q G(0V..10V) 28 nC<br>= Q G(0V..4.5V) 13.5 nC : ,<br>Package Marking<br>Type/OrderingCode | | Related Links<br>BSC022N04LS6 TDSON-8 FL 22N04LS6 -<br>**----- End of picture text -----**<br>


Final Data Sheet 

1 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC022N04LS6** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 

Final Data Sheet 

2 

Rev.�2.0,��2018-07-31 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC022N04LS6** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>99<br>100<br>82<br>27|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|85|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|79<br>3|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|1.9|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2018-07-31 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC022N04LS6** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.8<br>2.4|2.2<br>3.2|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=50A|
|Gate resistance|_R_G|-|1.2|-|Ω|-|
|Transconductance|_g_fs|-|170|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1900|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|630|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|20|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|2.1|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|16|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|5.5|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|3.0|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|3.6|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|6.1|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|28|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.8|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|13.5|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|11.6|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|31|-|nC|_V_DD=20V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2018-07-31 

4 

**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC022N04LS6** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|79|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.84|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|20.1|-|ns|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge1)|_Q_rr|-|42|-|nC|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs|



1) Defined by design. Not subject to production test. Final Data Sheet 

Rev.�2.0,��2018-07-31 

5 

**OptiMOS BSC022N04LS6** 

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80 175<br>package limit<br>silicon limit<br>PN T fT = |<br>70 potOa OONT | tt 150 _<br>60 pot AT SS<br>125<br>p | {A} | ft ft ft x<br>50<br>REPRE) CORRECT<br>100<br>— tft ft At ft aN<br>40<br>po | | | KT | 75 \<br>30<br>ee ee \<br>re ee ae .<br>20 eeee ee 50<br>Sh}<br>re ee 25<br>100 HFEF}eeee ee 0 LE]<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>CT P tot=f( T C) C I D=f( T C V GS ≥ F?<br>VV —“COSCCCTCC‘*”r<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] 10 [1]<br>single pulse<br>0.01<br>SEH Nt 1 µs | 0.02 it ett oct<br>0.05<br>10 [2] D RO NES 10 µs TT 0.1 |<br>DC 0.2<br>SS S RN NESENES I WM LTTE (E EE<br>0.5<br>celE E  nA NA GARIN 100 µs iil 10 [0] cE T T T TTI<br>NNN TE ET a<br>10 [1]<br>10 ms<br>x. e eeee 1 ms NOi ee = ca | py wm<br>SSNS eT<br>10 [0] ssypeeeeses CM CUCU<br>10 [-1]<br>| veCIITI Til<br>10 [-1]<br>SSeSSS) CHIEHTIETIMIETHHT Hil<br>SH | COMI TI I<br>a ll<br>10 [-2] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS BSC022N04LS6** 

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240 6<br>Oea eee 3 V a ee<br>4.5 V<br>GHGs ee 3.5 V ee<br>OT 2OGG 4 V OO SR ne ee a a ee ee ee es ee ee ee<br>3.5 V<br>200 5<br>5 V f |<br>Hey  |<br>LL Cece ee Eth ey<br>LY| Leeer T IIT TTT TTT TT TTT a 4<br>160 10 V 4<br>vii~ ee ee<br><= 120 r= 3 4 V<br>Lp eee<br>LL PAIAL TT ETT TT TT EE ET SE ee el ee<br>SP mw ————<—— 4.5 V<br>BY! / ee ————————————— 5 V<br>80 2<br>SHCPRPC| aaa 3 V ———— 10 V<br>D /SRRESS A=eeeeee es ee<br>40 1<br>2.8 V<br>| (00S ee<br>| (AmeLo ee<br>ASE EERE a CO<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 200<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>240 TTITITIILILLL LLL LLL 6 a<br>Se | Lii tt ty Par ee Pt<br>FECA EEC REEREEE<br>200 5<br>Es esemeseteseees EAE EEE EH<br>ested 00s MU TEsTESTAL GTESIETIRIEATO®<br>EEE} EERE<br>LTT {TTT TET TT TTT Trg Tt ET PEP CCC OPe PEEEEE<br>160 4<br>ERRFEEEEEEEEEEEEEEEE) -EEECECERREONSIS EEE=<br>ee SCA 175 °C<br>_ See Be FLEEEEELELELLLLLLL LLL<br>120 3<br>SOS GGSe00Seees ee FCCP RE<br>LTT TET TT TTT ETT fp te EEE TT FOOTE SREEEELELLLLE LL<br>80 2 25 °C —_—_——,<br>PEEEEEEEEEEE Eee) } 0 EEEEEEEPEEEA eee<br>| a<br>40 SUSU SUSUSEEGEY /S¥OUSESDeli@ MMM 1  scszazertateterezazararts<br>Eee) | PSS SSS<br>EEEEECECE VIAL CEE fo EEEE EEE E EEEEE<br>CREE 175 °C TIT TEttt LETT TT TTT ert ery ry<br>PET 25 °C<br>0 TT PT TET ETT Eee 0 PEELE EP EPP Tree Fee Ft<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS** 3 ™ 6 Power-Transistor, 40 V **BSC022N04LS6** 

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2.0 PETTITT TTT EEE EEE EEE 2.4 LTT TT TTT TTT TTT TT<br>PTTL LET TT TTT TTT TTT TTT ETT TTT<br>SSSPEA 000000000RR0000000) 4 4008 2.0 BeeSORRELLeeoS EEE EEEEEEEEEEEECEELL<br>1.6<br>y f) LT TAP PAADT TTT TET TTT ET TT TT TT<br>— / ™. TN<br>1.6<br>» PET TTT TTT EAE EE FLTASS<br>aq 1.2 POOP ATO LETT TTT TT TTT TE PNK EET EEE<br>3 Ba S LETT LET TT TET TE TT TENN ETT<br>1.2<br>3 Pz \ 2500 µA<br>E3g 0.8 COPPELLrTReEEE LETTLTT TTT TTT TTTTT  TTTTTT TTTT TTTT TTTTTETT TEAN NNUTTT TI<br>=§no PETE EEE EEE 0.8 LETTPEPE TTT TEEPE TTT [Tey] EEE 250 µA LI<br>0.4<br>0.4<br>PCCP EHH<br>PET TTT TTT EEE EEE EEE FERRE EEE<br>PET TTT TTT EEE EEE EEE FEELELLLLLELELLLLEEEEEEEEEE<br>0.0 FETT T TTT TTT EEE EEE 0.0 EET TTT EEE<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>Se ee ee ee E 25 °C EE<br>a SS L] Pi TT TT tT tT yt tt tt tt<br>PF [| [ TT [TT J fT TT tT ft tT tT tT yt tT L 25 °C, max EREEEE<br>a 175 °C POCO<br>175 °C, max<br>Kt tt tt tt ft} tt PP Tt 4 SERSSRRREESS” ceeeee<br>Ciss<br>se A a ee<br>EPA EEE EEA Leet<br>10 [3] SS —————— 10 [2] BEER EEE EEE EEE ACEee<br>a a ee eeeee Ae<br>Coss<br>o Ee 2 ee<br>& NSS eee eee x LETT TET a ee EE<br>PNR EERE ER FELT LEEEEE<br>10 [2] PTNEEEEEEEEee EEE | 10 [1] WEEEERRSSS<br>a SS NS ee<br>A SS ee<br>Pp | t TT ~— NT TT tT ft tT tT tT fT fT Tt | eee eee<br>A ECE CeCe CACC eee eee<br>Lt tt tit tt ty tt tt LET ETE<br>itt t tT PAt Crss tt PLT<br>PEER Fr) EEE<br>10 [1] 10 [0]<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>GS(th)<br>V<br>R<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

## **OptiMOS BSC022N04LS6** 

**==> picture [526 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] ——SHES a oe HES oe 10 Fees f= 8 V fe Pee<br>Le 20 V (7<br>32 V<br>SOC oO To i TTT TIT TTT TTT TT Yr<br>Nee \ NhNI Meal ae e<br>PSNIPNY PST,aN t 25 °C Serr | 8 LETTETTT R  TTTE TTT TT TTT EYetET<br>TTA LTR. PEELE CEE<br>10 [1] a aN ee ) N N VW ,<br>ONa a 0 6 LETT TTT TTT TTT Tar ¥<br>= a a eS S D/A<br>=_ LT TTT TTTsTTT 100 °C - LETT TTT TTT TTT ya EET TE EEE TT<br>4<br>ETS | BeereeeCe eee ee<br>10 [0] SS A A DO DD CG Nill ECOCCCCLTT TIT TTTCa TAf ETE TE TT TI<br>150 °C<br>a /<br>eerTYT TETTT TTTTT TTTTTT 2 Be)BBYBERD [GU0SRUSERHER0ER00ER0ER00000] SS eR<br>10 [-1] ET 0 ViLIAL ETT T TTTT T TTT itt TTTTtii T  tEEti T tttEE ELEIT ty tttLT  tf<br>10 [0] 10 AMAT [1] 10 [2] AN 10 [3] 0 aateazssneeeeeceetttttzze 5 10 15 20 25 30<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>Diagram Gate charge waveforms<br>44 Li TTT TT TT eT eee ett yey et eT eT ey of<br>Lit iTTT TT Tt tt ttt tte yet yt te ty tT<br>LT TTT TT ET ete eee ete et yey ee tT ety Ty<br>Litt TTT Tt Tit ttt ttt ey ty et et ety Vos<br>43 LTT TTLiL TTT TTITTT Titet ttTt ttt ttttt tee ttttttt tttetryeye tt Q<br>LTT TT TTT tet tT ttt tet tt tt ty g<br>LTT TTT TTT eee eee teeter et te Tyee ety<br>Lit iTTT TT TT ttt ttt ttt tty Yi tty tt<br>42 LTLit TTTiT TTTTTTtET Tit ete tttee eettt ttye ye Tyevit ttttyte tytt<br>LTT TTT TET ett et ete tye yet te ty ty<br>Ss= L itTT T TT TT IT TitT tT t ttt t TA YttT ttet e ttety tt<br>41 LiLTTTLTT TT TTT TTI TitT ttTt ttttt yA ATTTT ee ey TT<br>LT TTT TT ETE TTT yA TT eT et ety TT<br>LTT TTT TTT TTT yA ee ee et<br>LTT TTT TTT TT eA<br>40 LiLTTTT TIT iT“ tt tte Tt yt Ey tT<br>BERR4<br>Li TTIT TT iTyYtT TT Tt ttt tT ty tt ty tt<br>LTT TT TITTY ttt tet tt tt<br>LiLTTI TIT YT TTT TT ttt ttt yt et ty tf<br>39 LTT TITTYLTT TT YE tTTTettTt eTtteteteet eytt ettt tete ey ft O<br>EEALTTA EEE EEE EEEEEE Rom| | ew Q gate<br>Lit iI4; {TTTT tE T Eittee eeettt tteee eTtT etTtyt TEee Tyty ttTy<br>38 LET TT TE ET ET ey tit tT ttt yt ttt it tt Qa<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS BSC022N04LS6** 

Final Data Sheet 

10 

**OptiMOS BSC022N04LS6** 

Final Data Sheet 

11 

**OptiMOS BSC022N04LS6** 

## BSC022N04LS6 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-07-31|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

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Updated at April 29, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

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Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

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Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

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