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BSC019N08NS5ATMA1
Power MOSFET, N Channel, 80 V, 237 A, 1600 µohm, TSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 214W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 237A
- Drain Source On State Resistance: 1600µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.11 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
on Cinfineone BSC019NO8NS5 ## OptiMOS™5 Power- ~~T~~ ransistor, 80 V ## Features * Optimized for Synchronous Rectification in server and desktop * 100% avalanche tested * Superior thermal resistance * N ~~-~~ channel **==> picture [137 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> PG -T SON- 8-3<br>S y -—_—<br>mo<br>a” ‘oo<br>*<br>**----- End of picture text -----**<br> * 175° C rated * Pb ~~-f~~ ree lead plating; ROHS compliant * Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 ## Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters ~~a imoSC—iGSSSSCSCSC~CS™S~~ **==> picture [86 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> brain<br>Pin 5-8<br>coe (la )<br>*1: Internal body diode = Pin 1-3<br>©<br>**----- End of picture text -----**<br> **==> picture [79 x 34] intentionally omitted <==** **----- Start of picture text -----**<br> @ RoHS<br>**----- End of picture text -----**<br> ~~BSCO19NO8NS5~~ ~~PG-TSON-8-3~~ **==> picture [164 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> o19NnosN fe<br>**----- End of picture text -----**<br> Final Data Sheet 1 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30 **==> picture [114 x 50] intentionally omitted <==** **==> picture [157 x 154] intentionally omitted <==** BSC019NO8NS5 ## OptiMOS™5 Power- ~~T~~ ransistor, 80 V **==> picture [89 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> oe_—<br>In fjneon<br>**----- End of picture text -----**<br> 1 Maximum ratings at Ta=25 °C, unless otherwise specified **==> picture [510 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> Table 2_—| Maximum ratings<br>p aramet er Symbol Note/ Test Condit<br>ympo Min. |Typ. _[Max._| ote est Condition<br>237 Ves=10 V, Tc=25 °C<br>Continuous drain current" lp 168 A Ves=10 V, Tc=100 °C<br>28 Ves=10 Vv, Ta=25 °C, Rtpsa=50°C/W >)<br>Avalanche energy, single pulse* less |- — |- eva. ms Ib=50 A, Res=25 Q<br>Power dissipationer me Be214 fw T ac =25 °C , Rinsa=50 °C/W?<br>F ° IEC climatic category; DIN IEC 68 -1 :<br>Operating and storage temperature -55 - | 175 Cc 55/175/56<br>**----- End of picture text -----**<br> ## 2 Thermal characteristics **==> picture [452 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> Table 3. Thermal characteristics<br>p aramet er symbol Note/ Test Condit<br>Thermal resistance, junction - case, ymbo Min. |Typ. [Max._| ote est Condition<br>bottom Poo fod for ikaw |<br>Thermal resistance, junction - ambient,<br>6 cm? cooling area”) ee ee<br>**----- End of picture text -----**<br> > ") Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De ~~-r~~ ating will be required based on the actual environmental conditions ~~.~~ > 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 ym thick) copper area for drain connection. PCB is vertical in still air. > 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30 OptiMOS™5 Power- ~~T~~ ransistor, 80 V BSC019N08NS5 **==> picture [103 x 41] intentionally omitted <==** **----- Start of picture text -----**<br> e—_<br>Cin fjneon<br>**----- End of picture text -----**<br> ## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified ## Table 4 Static characteristics **==> picture [482 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |m|aramet|er|Symbol,ymbo|Min.aeTyp.|_|Max._|—|Unit|otote /|TestConditCondition| |Drain-source|breakdown|voltage|Veross|[80||-||-||v|||Ves=0|V,|Ipb=1|mA| |Gate|threshold|voltage|Vos=Ves,|[o=146|pA| |Zero|gate|voltage|drain|current|os|10|100|v=|80|v|veal|y|dae|So| |Gate-source|leakage|current|licss|—-|-—s'|to.——sfx00.—|na|Ves=20|V,|Vos=0|V| |Drain-source|on-state|resistance|Rosen|f|58|xe|Vesa||ae| |Table|5|Dynamic|characteristics| |m|aramet|er|symbol|Note/|Test|Condit| |ymbo|Min.|_|Typ.|_|Max._||ote /|Test|Condition| |Input|capacitance”)|Css|ie|6600||8600|Ves=0|V,|Vos=40|V,|f1|MHz| |Output|capacitance”|Cos|se|——_—«||1400|1400|Ves=0|V,|Vos=40|V,|f1|MHz| |Reverse|transfer|capacitance”|css|sess||r|Ves=0|V,|Vos=40|V,|f1|MHz| |ext| |ext| |ext| **----- End of picture text -----**<br> ## Table 5 Dynamic characteristics ## Table 6 Gate charge characteristics”) **==> picture [496 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |m|aramet|er|symbol,ymbo|Min.|_|aleTyp.|_|Max._|luni|oo|t|e /e|TestConditCondition| |Gate|to|source|charge|las|ses|fides ns|Vpp=40|V,|/p=50|A,|Ves=0|to|10|V| |Gate|charge|at|threshold|laam|=|fe|20s|snc|Vov=40|V,|Ip=50|A,|Ves=0|to|10|V| |Gate|to|drain|charge”|las|«fs|—s||20.—s|29s||nc_|i|Vpp=40|V,|/p=50|A,|Ves=0|to|10|V| |Switching|charge|Qu|fe|29|fen||Vo0=40|V,|Ib=50|A,|Vas=0|to|10|V| |Gate|charge|total”|lag|=|sds|spa|ft|nc|Voo=40|V,|Ip=50|A,|Ves=0|to|10|V| |Gate|plateau|voltage|Veen||-|(44||.|fv|||Vpp=40|V,|/p=50|A,|Ves=0|to|10|V| |Gate|charge|total,|sync.|FET|Quem|sesfae|Vps=0.1|V,|Ves=0|to|10|V| |Output|charge”|Qe|||ttf|147__|[nc|_||Vos=40V,|Ves=0|V| **----- End of picture text -----**<br> > ’) Defined by design. Not subject to production test. 2) See "Gate charge waveforms” for parameter definition Final Data Sheet 4 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30 **==> picture [114 x 50] intentionally omitted <==** **==> picture [138 x 120] intentionally omitted <==** **==> picture [32 x 64] intentionally omitted <==** **==> picture [271 x 105] intentionally omitted <==** BSC019NO8NS5 ## OptiMOS™5 Power- ~~T~~ ransistor, 80 V **==> picture [114 x 42] intentionally omitted <==** **----- Start of picture text -----**<br> Cii n fitneon ;<br>**----- End of picture text -----**<br> ## 4 Electrical characteristics diagrams **==> picture [496 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> wr TT, | [| [| | | ee OC<br>e— TT P EN<br>soo _tIw\ | [| [| | |) | | ss Ns<br>a 200 ——}— Nt<br>es sO pf | IX} of of ft<br>Ss ee Po ON<br>10077-N\T_ ood se es es, NO<br>\ es ee es es Ss<br>=e ~~ tT [NP]<br>a fo}<br>é |a [+—+_++_\_++] 1H fe ooo ae<br>a ee ee roto ONT<br>ee ee 100}\<br>go +} | a<br>PN a es ss<br>a es ee es es<br>a PO GS A<br>40 a Rs es ed es<br>a ee ee a<br>a es ee a es|<br>a ee ee ee a |<br>oi | [| | | | | N | oi | | | | | JT JT<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>Tc [°C] Tc [°C]<br>10 SSS SS SS Se 10°<br>——— 4 single pulse [4-H Ht<br>KF tt tT CI a 0.01 oe<br>ro L E F emm es TAN EMIT TTT FETT<br>AK NSN USS .<br>EERSTE ce St ool<br>SNOO EES AHF H itt<br>A NEN NN oo ee<br>ZiyLog LNENIX N CUE N T, [ERB tl lil sor<br>eo) SSSSS area |e TI en erLL Ll<br>a I A 2 Ht | LF”<br>ST sill ot<br>Se cai ame eetee<br>a Sw pt eee Ee<br>r o \ Meee CCC COCo<br>LE TT NT C74<br>Saar a eee POA A<br>aneee cf I WAUATE LIMITLIMIT<br>yo ? LLU TEE 10 2 LUT<br>10 " 10° 10' 10? 10 ° 10 7 10 ° 10 ? 10 " 10°<br>Vos [V] tp [S]<br>**----- End of picture text -----**<br> Final Data Sheet 6 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30 OptiMOS™5 ~~BSCO19NO8NS5 Power-Transistor, 80 V~~ **==> picture [114 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> infit<br>C in neon ;<br>**----- End of picture text -----**<br> **==> picture [497 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 PA STTTITULELLITIT Tt<br>Ei hove VOECCELEeeee V OCCCACEEE<br>PCL ff a a asvit PottEEL<br>PCCPA er BnSee<br>ee<br>POLE 2 ey eee 2RS000 S ee<br>PCCEC AT LEE PEEP few<br>PCCEL AVEC FOCAVEC EEE ye<br>AA SOS) SSSR SSSR<br>S0008)/) 4) See OAV TTT<br>coo LEE 3 -ZEe<br>PEPER) ode SCee<br>=dO //ee — |<br>re SRS} // ASRSeeeeeenneeeee § COC CER eSTTCCee<br>so Lyeee le pe<br>BE0 / sane eeee ——<br>CCV Eeeeeeeee Sooo<br>Se) 7 4eeee PTCTTTTTTIT LT<br>BD /4 POOP<br>700 LEZ _OOPEEEEEEE<br>So) ARGS POPPE<br>Peaceee eee FERREEEECEELLE<br>2 £27s ee 00EE N EEECOUE 9 LEERPCCP<br>0 | 2 3 4 5 0 100 200 300 400 500<br>Vos [V] lo [Al<br>MOTTEPOPCITLL 5TTITMILLTLIIITIIIILTIIIIBs IL<br>POPC FrePNeeeeeeeeeeeeee<br>POPPE FrTPXeee<br>me ECEEEEEEEEEEESEEESEEEEE<br>FOEHET | EEEESREEEEEEEEEIN E E<br>POPPE ENN ot FE<br>SRS eeeee eeeig FCAPSa eT<br>coo LECCE 3 eee<br>2<br>Cece)= 7(EERE\<br>2 POPPE} EN<br>goo LEE) jg Nr<br>FEEEEEEEEEEEEEECESEECA<br>FECCEEECCEEECCEECEEELALLELEf *CECESRE E E EPEE<br>SERS rTrTreltt See CSS<br>0 eee ee SEE<br>500 EECAEEE<br>BOSSE A Pn a<br>COA eee PPePPrereeereeeeeeeee eee<br>PCCP reop/AREGREEEeAT FrrrrrfreerfrtfteeefeeeeFreer [ete] td<br>“aA ff fe<br>9 [COC] ee [O] e oso Pa Frrrrfrereeereeeee ef<br>0 1 2 3 4 5 6 7 3 6 9 12 15<br>Ves [V] Ves [V]<br>lo=f(Ves), |Vos|>2|/o|Ros(onmax; parameter: T;<br>**----- End of picture text -----**<br> Final Data Sheet 7 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30 **==> picture [501 x 702] intentionally omitted <==** **----- Start of picture text -----**<br> Optin Ss MOSeyT™5 PoWwe r T ra ns is to r, 80 V inf i nneo<br>a aliz drain = eon res ista a ee jag em 10: T gate e<br>ized yp.<br>] annatHr7 TT| aai|] | | aunu<br>3<br>HAE<br>a TT i<br>noe EE<br>aaail<br>3 07 iHi n tsettttil | |<br>ng<br>2) 1 .<br>: ayoe| LEE fl thre ae aN TT<br>5 |HEAR| | ce+A +H<br>| _<br>g . HEARR| | | | TyheSNil<br>i g | | TT uA<br>[|<br>20 yyHy HE| Nn<br>oN,<br>| | UynutHE| |<br>3<br>& . | TT| | A<br>f LIini yyynit aosul nti|<br>_<br>| | FYHy| |||| | Hitti yesnit|nu|<br>ail HH TT| |<br>a enpannuee 0 0 a |HarT]| r<br>3 [1][2] 7i| g “ 0 80 "20anTHth<br>a3 o u<br>= =r A, 70 Veam “es para<br>ram 7 pakwands — — 1 — cha caf reve<br>—<br>=— ——<br>os=SeeSetar — je TT] u ma HTPeatEeraat<br>= | Sear | | 0 : il x iit ‘<br>it Au<br>- Hh<br>isiti < Zatte<br>~<br>Scorescare THcaea ae‘Aiafeie<br>se e [s | | ' KHaeil — | 1il<br>His | | =<br>== cl<br>4 | | EES | | == = fy Scar<br>bee | | = ><br>oA oA | | e e HEEHqTH ie stAe<br>=‘EEETP4Heheit| || ° lil |iTihilill} il iil<br>1 0°5 — 20 3 0 10"sii0 025 °° 0 | .- " 0<br>Vos0 Vspa<br>Aes):; VaseAVE =f(Vs0); P =ter: 7<br>**----- End of picture text -----**<br> Fin al Data Sheet 8 ReV ~~.~~ 2 ~~4~~ , 202 ~~m~~ n ~~-~~ 30 OptiMOS™5 ~~BSCOT9NO8NSS Power-Transistor, 80 V~~ **==> picture [114 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> infir<br>C in neon ;<br>**----- End of picture text -----**<br> **==> picture [497 x 619] intentionally omitted <==** **----- Start of picture text -----**<br> Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge<br>10° Aa 0 10 he 24 li<br>Lea a LoeWa T4OMT Ee yyyyee<br>pt pe e e eoaKee<br>CCCI TTINT TN SS 0000055550000089/20RERe<br>TTI NCTIMTE< 35°C S E.) EERELTT TTT TTT TT Tt tt Apr<br>\ \ 6 BERREEE7 Ae<br>=Soz 10 PeLN otLINNee ee (8 ECC INeee 7 CeeGeee<br>a 4 i<br>FTN SOA<br>| | | | | \ BERDASR<br>\ stHitIA Ti TTT TTT yy TT rr ey<br>150 |°C BEEPLT VTAER TT TTT tT eet ey tt ee<br>ITA TTT TTT eT ee Te<br>40° pMIATLITT TTT IT T TT tet itTiti ttetT TTet trtt tyetyt |<br>10° 10' 10? 10° 0 20 40 60 80 100<br>tav [Us] Qgate [NC]<br>Ing=f(tav); Res=25 OQ; parameter: Tj,start Ves=f(Qgate), /p>=50 A pulsed, 7j=25 °C; parameter: Vop<br>Diagram 15: Drain - source breakdown voltage Diagram Gate charge waveforms<br>a<br>COPE<br>COPE<br>SESS See Vex<br>eg LLC<br>SERS eee ae Q<br>CUPP 9<br>SERSSESSeeeSeeAeAe<br>yeeSESS Ree ee Aea<br>SERS eee Ae<br>CEP<br>S SERS Reea<br>= ett TPA<br>8 SESS Rees eeeA<br>8 SES 0e eee4<br>é SERRA<br>SESS S eee4<br>A<br>SESS RRReeA<br>SERS Reey eee<br>SESS R0e4S<br>SERRE 4Seee<br>72 aeee<br>SRSG7S0n7 4cne42ee ee eee Fo= Phos<br>BGP 40S<br>COPE<br>7g LLCO Bay<br>0 4 0 0 40 80 120 160 200<br>TPC]<br>Variossi=f(Ti); lo=1 mA Pe<br>**----- End of picture text -----**<br> Final Data Sheet 9 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30 **==> picture [114 x 50] intentionally omitted <==** **==> picture [144 x 173] intentionally omitted <==** **==> picture [153 x 70] intentionally omitted <==** **==> picture [158 x 183] intentionally omitted <==** **==> picture [78 x 151] intentionally omitted <==** OptiMOS™5 Power- ~~T~~ ransistor, 80 V BSC019NO8NS5 **==> picture [103 x 40] intentionally omitted <==** **----- Start of picture text -----**<br> o-.<br>Cinfihnrineon<br>**----- End of picture text -----**<br> ## Revision History BSC019NO08NS5 ## Revision: 2021 ~~-1~~ 1 ~~-3~~ 0, Rev ~~.~~ 2 ~~.~~ 1 |Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Revision|||||||Subjects (major changes since last revision)|||||||||||| |2~~.~~0||||2020~~-1~~2~~-~~22||||Release of final version|||||||||||| |2~~.~~1||||2021~~-~~11~~-~~30||||Update"Marking"|||||||||||| Trademarks All referenced product or service names and trademarks are the property of their respective owners. ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineon ~~.~~ com Published by Infineon Technologies AG 81726 Miinchen, Germany © 2021 Infineon Technologies AG All Rights Reserved ~~.~~ ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer's applications ~~.~~ The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. ## Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ~~.~~ Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered ~~.~~ Final Data Sheet 11 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-~~ 11 ~~-~~ 30
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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