Image not available
Illustrative purposes only
BSC019N06NSATMA1
Power MOSFET, N Channel, 60 V, 100 A, 1950 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 136W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1950µohm
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.0 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC019N06NS**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
1)
|**Parameter**<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|60|V|
|_R_DS(on),max|1.95|mΩ|
|_I_D|100|A|
|_Q_OSS|63|nC|
|_Q_G(0V..10V)|58|nC|
**==> picture [143 x 204] intentionally omitted <==**
**----- Start of picture text -----**<br>
8<br>7<br>6<br>SE ~ 5<br>“Agee,<br>1 < 5<br>2 6<br>3 4 acS 7 8<br>4<br>3<br>2<br>1<br>S 1 L a 8 D<br>S 2 | | 7 D<br>S 3 6 D<br>K G DAL<br>G 4 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC019N06NS<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~|019N06NS<br>|-<br>|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] �Power-Transistor,�60�V BSC019N06NS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.�2.1,��2017-03-20
**OptiMOS[TM] �Power-Transistor,�60�V BSC019N06NS**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|100<br>100<br>28|A|_V_GS=10V,_T_A=25°C<br>_V_GS=10V,_T_A=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|220|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|136<br>3.0|W|_T_A=25°C<br>_T_A=25°C,_R_thJA=50K/W|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.7|1.1|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.1,��2017-03-20
**OptiMOS[TM] �Power-Transistor,�60�V BSC019N06NS**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=74µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.5<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.7<br>2.4|1.95<br>3.2|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=12.5A|
|Gate resistance1)|_R_G|-|1.7|2.6|Ω|-|
|Transconductance|_g_fs|60|120|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics[1)]**
|**Table5Dynamiccharacterist**|**ics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|4200|5250|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance|_C_oss|-|960|1200|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|41|82|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|12|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|7|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|26|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|8|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|19|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|12|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|11|16|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|18|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|58|77|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.4|-|V|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|51|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|63|79|nC|_V_DD=30V,_V_GS=0V|
> 1) Defined by design. Not subject to production test
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.1,��2017-03-20
4
**OptiMOS[TM] �Power-Transistor,�60�V BSC019N06NS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|42|67|ns|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|43|-|nC|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.1,��2017-03-20
5
**OptiMOS[TM] BSC019N06NS**
**==> picture [539 x 289] intentionally omitted <==**
**----- Start of picture text -----**<br>
160140 eee 120 | | tf | ft | ft<br>120 TINE Lt 100 | | ft | [Qt ft<br>Oe 80 ~T{PPTLST 4<br>100<br>Pp<br>—= 80 BFpf | [N | | ft 60 | |ft]A<br>60<br>40<br>Nr<br>40 Sepfesft ft | A 20 eeeeeeee ee<br>20<br>yyy<br>tttPPTtts tt} Fy yy|<br>0 PPO 0 | | yt ft<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>CT P tot=f( T C) C I D=f( T C V GS ≥ F?<br>VV —“COSCCCTCC‘*”r<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>PE STS econ TTC<br>fe NE Ne 10 µs1 µs LUM TTI TTT TTT<br>10 [2] 10 [0]<br>100 µs<br>0.5<br>1 ms 0.2<br>10 ms<br>0.1<br>10 [1] STN DC aK Ntt S 10 [-1] C<br>0.05<br>0.02<br>a Fee TIMICHIME<br>TT ET LTTE CE ETNA EN LUT 0.01 TUTTETTT ETI ET TTT<br>10 [0] 10 [-2] single pulse<br>AN Fecrniceceetit CCC<br>ee ee ON Ill a a a a a<br>10 [-1] lll 10 [-3] ETHIE EVIE TAINETNATAT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC019N06NS**
**==> picture [528 x 633] intentionally omitted <==**
**----- Start of picture text -----**<br>
400 4.0<br>ee 2 ee ee |__|ee 5 V pfeeft yf fT ee ft yt fT fT ee<br>YF<br>350 3.5<br>eese 7 V ee 5.5 V<br>8 V<br>300 | ee 3.0 ==<br>— fo soo S eee 6 V ee<br>fff fi Ste Tr<br>250 | 6 V 2.5<br>i / i rn a=— eee<br>hf | LLBEERa EEEEEEEE<br>5.5 V 7 V<br>c.f 200 f ES 2.0<br>8 V<br>|) SS EE<br>4a =——— 10 V =eee<br>10 V<br>150 1.5<br>7 |) SE<br>I EEE<br>100 A 5 V ——— 1.0 ee<br>LZ— ee ee ee e<br>50 0.5<br>Ys. —_—__a | FeeSe<br>Vo EEE EEE<br>0 | y a ee ee 0.0 ajf f tf ft ft fp ft pt<br>0 1 2 0 50 100 150 200 250 300 350 400<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 200<br>Ae)<br>a<br>a<br>i | ZO<br>320 160<br>i ZO<br>PERE | ae<br>esa ZO<br>240 120<br>PEERS<br>a le Z<br>PERE<br>i<br>160 80<br>aPEEPEEE SE | 7p<br>BEESi |<br>80 / 40<br>Ss<br>175 °C<br>ne 7 25 °C a<br>SeS88e60)/eeeee<br>ss<br>0 0<br>0 FERRER 1 2 3 AR 4 5 6 7 | fo 0 20 40 60 80 100<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC019N06NS**
**==> picture [528 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
4.0 Pt; tT ey tT tT TT Tf 4.0 P| | tT |r| dT tT ET Tf<br>3.5 Pt; | tT ete rT rE TT | 3.5 P| |] et tT tT ET tf<br>Pt | tT te | | A |<br>3.0 eK, 3.0 |<br>Pt a eeee 740 µA<br>2.5 eee| eT eeeA 2.5 PRESaR NE|<br>max<br>74 µA<br>pitt, | pie | _ Pp ORAL<br>2.0 2.0<br>SRR 24a eee YAN<br>typ<br>oe Pt; | tt EE rE EU NIN<br>1.5 ae | | | tf 1.5 eee eee eNe<br>Tee | ET ET P| |] | | | dE rE | | NO<br>1.0 Pt | tT ert TT TT 1.0 P| |] | | tT tT rE TT<br>Pt | tT et dT tT TT Tf Pt; |] | | | tT ET tf<br>0.5 Pt |] | | tT tT ET Tf 0.5 P| | | | | tT dt tT tT tf<br>Pt | tT et | tT TE tT Tf P| |] | | tT tT TT<br>0.0 Pt; | tT tt dT cE TT Tf 0.0 Pt] | | | | | dE ET Tf<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>FFE Ef et En 25 °C Cacee Oa a<br>Ciss 175 °C<br>BEERRS See ii 25 °C, max ee<br>175 °C, max<br>PEE ttt ttt Pt et tt et tt TT tt | BEEP YaA4EEEEeSs<br>FEEEBRRRREE EHH Coss TTT TTT PA eet |<br>10 [3] FTPeeeAREERee i | 10 [2] aLE ae SoeA7<br>v7 CINE EEREeee) ERE EEEEER EEE LoERE C E E EEEEEAEE EEE<br>& PT INT TT TTT TPT errr TT) fs Piet et ye AP<br>10 [2] 10 [1]<br>HN pee EEL SeREEP aT ED SEeeeeeee<br>Crss<br>EEREa ERE Serre aCOCOA Eee<br>PTPETETT ETT | PPE eee)ee eee<br>TTT EE EEE ST<br>FEE} EEE<br>10 [1] 10 [0]<br>0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] BSC019N06NS**
**==> picture [526 x 634] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 12<br>30 V<br>10 12 V<br>25 °C<br>PRESTON TTT L<br>100 °C<br>is HH SEEEEEEMH<br>10 [1] 8 48 V<br>UIT 150 °C NP SERREREED 45<br>6<br><x | [ttt PIE NN LTT} | Lp<br>SS TTT T y YK yy<br>10 [0] 4<br>UIEUUM LUM) Ee<br>Tf ET ETT ELT 2 /<br>Ch TYE tT } ] ]tty<br>10 [-1] TI CIM | Se 0 eee e ee<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>TT Gate charge waveforms<br>70 rT {| | [| | [ | | | | | [|<br>68 || {|{| || || || [|[| [|| || || [|[| f[| || Ves<br>66 fr| {|{| || [|| || [|| || || || ft| |tf ftft Q,<br>64 Ff | [| | [ | | | ft | fe]<br>62 ||eee{| | | | | Per] | [|ee| |<br>5 60 me<br>58 |i7~{| {|baw||tat]i}|[| | || a|| eee t | ll]lt]| lcdtltft lltl | llft t<br>S {| | | | [| [| | tT | | Van<br>56 | {| | | | [| | | | [| f |<br>54 | {| | | | [| [| | | [| [| | /<br>| {| | [| | | | | | ft | ft<br>52 ee Com [| Om Q oan<br>| {| | [| | | | | | ft | ft<br>50 | | | | | [| | | | [| f | Qys Qya<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D CT<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
**==> picture [265 x 14] intentionally omitted <==**
**----- Start of picture text -----**<br>
TT Gate charge waveforms<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] BSC019N06NS**
Final Data Sheet
10
**OptiMOS[TM] BSC019N06NS**
Final Data Sheet
11
**OptiMOS[TM] BSC019N06NS**
Final Data Sheet
12
**OptiMOS[TM] BSC019N06NS**
## BSC019N06NS
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-01-11|Release of final version|
|2.1|2017-03-20|Rev. 2.0|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
13
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →