BSC019N04LSATMA1

Power MOSFET, N Channel, 40 V, 100 A, 1500 µohm, TDSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS
Qualification: -
Power Dissipation: 78W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TDSON
Drain Source Voltage Vds: 40V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 1500µohm
Gate Source Threshold Voltage Max: 2V

Delivery and price
Units per pack	1000
Price	0.597 €
Current stock	1000+
Lead time	7 days

Datasheet

**BSC019N04LS** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

¢ Optimized for high performance SMPS, e.g. sync. rec. _R_ DS(on) _V_ GS 

1) 

|**Parameter**<br>Table 1<br>Key Performance|**Value**<br>PerformanceParameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|1.9|mΩ|
|_I_D|100|A|
|_Q_OSS|37|nC|
|_Q_G(0V..10V)|41|nC|



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|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC019N04LS<br>~~Type/OrderingCode |~~|PG-TDSON-8<br>~~|~~<br>~~|~~|019N04LS|-<br>~~Related Links~~|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC019N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.1,��2016-05-24 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC019N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>98<br>100<br>82<br>27|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|90|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|78<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|1.0|1.6|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.1,��2016-05-24 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC019N04LS** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.5<br>1.9|1.9<br>2.7|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=50A|
|Gate resistance1)|_R_G|-|0.8|1.6|Ω|-|
|Transconductance|_g_fs|95|190|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2900|4060|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|840|1180|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|68|136|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|26|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7.6|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|6.2|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|6.7|9.4|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|8.1|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|41|57|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.6|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|21|29|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|16|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|37|52|nC|_V_DD=20V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.1,��2016-05-24 

4 

**OptiMOS[TM] �Power-MOSFET,�40�V BSC019N04LS** 

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## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|78|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.84|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|70|140|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge|_Q_rr|-|27|-|nC|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.1,��2016-05-24 

5 

**OptiMOS[TM] BSC019N04LS** 

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Final Data Sheet 

6 

**OptiMOS[TM] BSC019N04LS** 

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**----- Start of picture text -----**<br>
400 5<br>10 V<br>350<br>4 V<br>H/—— 4.5 V | 4 Jape UPL 2.8 V | EEL EL<br>=e 3.5 V 3 V ie<br>300<br>5 V 3.2 V<br>FP<br>250<br>3 3.5 V<br>ff | ate<br>200<br>3.2 V 4 V<br>Sy | Se 4.5 V<br>2<br>150 5 V<br>3 V 10 V<br>100<br>=a te<br>YY 1<br>2.8 V<br>50<br>0 |pot a 0<br>0 1 2 0 50 100 150 200 250 300 350 400<br>V DS I D<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 300<br>250<br>320<br>BEREERRERS | Corre<br>EERE REE eee Soo<br>200<br>240<br>BEER RHESS | Coot 150<br>ee<br>160<br>100<br>BREE) CA<br>80<br>EERE RHRER | PARC CEE<br>50<br>150 °C<br>25 °C<br>a<br>0 A 0 Pi | | ft tt |<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V GS I D<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS[TM] BSC019N04LS** 

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**----- Start of picture text -----**<br>
4 2.5<br>ee i<br>Pt a<br>a<br>ee| | | ft ft tT tt tf a<br>2.0<br>3 P| L a<br>Pt || | f| J| f| ft| TK| ian| Kt]EE A ee ee ees nl<br>1.5<br>CECA |) PRS<br>max 250 µA<br>Enna 4a _ a<br>2<br>pf |p pia ee ER EH<br>Oe~ 7 a<br>| ee typ 1.0 pot fof ff tt tT NT<br>TosS at OsA<br>1 rT 1-1 a<br>Pt 0.5 a<br>Pt | | | tf ft ft tt tf a<br>Pt | | ff fF ft tt tf OO<br>0 Pt || || || ft| tfftttttft tfte 0.0 aPi tf ff fe yy 4<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j rc] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>


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10 [4] ———————————— 10 [3] e 25 °C e ——————<br>a H 150 °C a<br>Ciss 25°C,max<br>aSESS». SSE (|1 150°C,max ey,1cf| [| | [ [| TT [ T ]<br>b> SRR PT TL<br>Coss ELLE Veet<br>10 [3] -ELERNLEEELEEE 10 [2] EL RY ee<br>Se Se Se<br>ac ApM fteetT tT ft ftet e tpeee ee _ s es e s eee e s ese A 0 A<br>ee<br>tPA ETP ey ry PPT Et ear gg FP<br>10 [2] EL PAN EEE Crss 10 [1] ELLE EEE<br>NS SSS Se ee<br>a ee ee<br>Pta | | | tf ft | | eer ft eeee<br>PT tT EET ETE EET Ey aPT TT TP Ppp Te<br>PELEEELL EEE LEE LL ELL GEEGEL<br>10 [1] 10 [0] LEE EE<br>0 10 20 30 40 0.0 0.5 1.0 1.5<br>V DS V SD<br>Vv Vv<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] BSC019N04LS** 

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**----- Start of picture text -----**<br>
10 [2] 12<br>20 V<br>oth ttt 10 Pt ft ff ft ft dt dl<br>8 V<br>PONE TTR EEN TT YY na<br>32 V<br>CONST 25 °C 8 lia.<br>LUNN NUTT TTT Of<br>100 °C<br>10 [1] 6<br>COINS 125 °C  ON) |. FEE AA<br>tePT TTT EENTENN 4 |TT| || |ATTAl i ft ff 4<br>CEI CTI TST 4<br>2<br>ATETTIMITMILTNETE NUIT A: y rett | | tt<br>10 [0] 0<br>\ | AREEE<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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OO Gate charge waveforms<br>**----- End of picture text -----**<br>


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46<br>Eee<br>44 ee<br>a<br>ea<br>42<br>aa<br>40 eee<br>ee<br>a<br>38 Peaeeee ee ee ee ee<br>36<br>ee<br>pe<br>34<br>==ee<br>32<br>pee<br>Pp [| [| {[ f[ ff fF FT FT FT ff<br>30 Pee<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] BSC019N04LS** 

Final Data Sheet 

10 

**OptiMOS[TM] BSC019N04LS** 

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Dimension in mm<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

**OptiMOS[TM] BSC019N04LS** 

Final Data Sheet 

12 

## **OptiMOS[TM] BSC019N04LS** 

## BSC019N04LS 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.1|2016-05-24|Update footnotes and insert max values|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13

Updated at March 15, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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