Image not available
Illustrative purposes only
BSC015NE2LS5IATMA1
Power MOSFET, N Channel, 25 V, 100 A, 1500 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 50W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 25V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1500µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.395 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
## MOSFET
**OptiMOS[TM]** OptiMOS[TM] 5 BSC015NE2LS5I
Final
## 5 Power-MOSFET, BSC015NE2LS5I 25 V
## **OptiMOS[TM]**
## **Features**
* Monolithic integrated Schottky-like diode + Very low on-resistance _R_ DS(on) @ _V_ GS * 100% avalanche tested ¢ N-channel 1)
|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key~~<br>~~Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|25|V|
|_R_DS(on),max|1.5|mΩ|
|_I_D|100|A|
|_Q_OSS|17.5|nC|
|_Q_G(0V..4.5V)|10.5|nC|
**==> picture [151 x 218] intentionally omitted <==**
**----- Start of picture text -----**<br>
SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>. "ing,<br>Pasa, 4<br>1 4<br>3<br>2 2<br>3 1<br>4<br>S 1 i 4 8 D<br>S 2 7 D<br>S 3 6 D<br>i Gp i<br>G 4 5 D<br>**----- End of picture text -----**<br>
||**Package**|**Marking**||
|---|---|---|---|
|BSC015NE2LS5I|PG-TDSON-8|15NE2L5I|-|
1) J-STD20 and JESD22
Final Data Sheet
2
**OptiMOS[TM] 5�Power-MOSFET,�25�V**
BSC015NE2LS5I
**==> picture [146 x 65] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev.�2.0,��2015-08-06
**OptiMOS[TM] 5�Power-MOSFET,�25�V**
BSC015NE2LS5I
**==> picture [146 x 65] intentionally omitted <==**
## **2�����Maximum�ratings**
at� _T_ j�=�25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>93<br>100<br>78<br>33|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|50|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|18|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-16|-|16|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|50<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **3�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|2.5|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
Rev.�2.0,��2015-08-06
4
**OptiMOS[TM] 5�Power-MOSFET,�25�V**
BSC015NE2LS5I
**==> picture [146 x 65] intentionally omitted <==**
## **4�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0V,_I_D=1mA|
|Breakdown voltage temperature<br>coefficient|d_V_(BR)DSS/d_T_j|-|15|-|mV/K|_I_D=10mA,referencedto25°C|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>0.5|0.5<br>-|mA|_V_DS=20V,_V_GS=0V,_T_j=25°C<br>_V_DS=20V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.7<br>1.3|2.2<br>1.5|mΩ|_V_GS=4.5V,_I_D=30A<br>_V_GS=10V,_I_D=30A|
|Gate resistance|_R_G|-|0.85|1.4|Ω|-|
|Transconductance|_g_fs|75|150|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=30A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1500|2000|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|750|1000|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|60|-|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|4|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|4|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|19|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|3|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.0,��2015-08-06
5
BSC015NE2LS5I
**==> picture [146 x 65] intentionally omitted <==**
## **OptiMOS[TM] 5�Power-MOSFET,�25�V**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|3.7|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|2.4|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|2.3|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|3.5|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|10.5|14|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total2)|_Q_g|-|22|30|nC|_V_DD=12V,_I_D=30A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|9.8|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge2)|_Q_oss|-|17.5|24|nC|_V_DD=12V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|50|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.5|0.65|V|_V_GS=0V,_I_F=7A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|12|-|nC|_V_R=12V,_I_F=_I_S,d_i_F/d_t_=400A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test
Final Data Sheet
6
Rev.�2.0,��2015-08-06
**OptiMOS[TM]** 5 Power-MOSFET, BSC015NE2LS5I 25 V
**==> picture [539 x 267] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 120<br>50 100<br>40 C INTA)\ 80 GEERRSFE{| | tf] iA fT<br>= SEN —{ | | | PN<br>30 60<br>\ z< / /] | | | | Al<br>20 \ 40 {| | tf | ft tN<br>AERSREEA<br>PCAN) {| ft | ft ty<br>10 20<br>LEE NO] ERREEEHE<br>0 INS 0 | | tf | tt th<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>i P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>1 µs<br>oH eT<br>10 µs<br>0.5<br>ER NTT TTI TT TT et t<br>10 [2] 100 µs 10 [0]<br>0.2<br>PANN EEN EEE Me 0.1 ATT CenCMC<br>0.05<br>1 ms<br>0.02<br>z 10 [1] E T 10 [-1] Se gt a St a<br>LUNIA 10 ms NAINA 0.01<br>DC<br>oe a MCE single pulse<br>A ctu. PMC CA CT<br>10 [0] CCI 10 [-2]<br>NIN TEC) ) OIC<br>se A TV<br>A 0<br>NN lll a<br>10 [-1] 10 [-3]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
7
BSC015NE2LS5I
## **OptiMOS[TM]**
**==> picture [528 x 604] intentionally omitted <==**
**----- Start of picture text -----**<br>
500 3.0<br>10 V 7). LL | {| {| {| {fT {ft {|<br>—====——— 3.2 V<br>4.5 V<br>5 V 2.5<br>400 N= |) PRS SSS<br>| ==.<br>3.5 V<br>TS 4 V 3.5 V _ Seo<br>2.0<br>4 V<br>i= =—————<br>300<br>4.5 V<br>5 V<br>1.5<br>an) a 3.2 V —————— 7 V 8 V<br>10 V<br>200 ff ———<br>1.0<br>Ve 3 V =—————<br>WoO<br>100 2.8 V<br>0.5<br>WoO<br>0 |A= 0.0 [===] [=]<br>0 1 2 3 0 10 20 30 40 50<br>V DS I D<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 400<br>ee 7<br>a ee ee ee ee 2 ee ee<br>320<br>sa e e eesaeee | ee 300 y,<br>240 fraor| ee| ee| [|ee[| ee[| |ffiee| |ee| ale4<br><es|ee| ee| | ee[|ee| eefF [| ee| | ee| ee 200 / Ae eee<br>160 sf<br>| | | | [| | f [ | | |<br>80 eeaa eeeeee eeee/ eeee eeee 100 ee<br>25 °C<br>150 °C<br>|See| [| | sees]1ne fT<br>0 |ey| | |] yl | |eeft] fl 0 ee ee<br>0 1 2 3 4 5 0 50 100 150 200 250<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
8
5 Power-MOSFET, BSC015NE2LS5I 25 V
## **OptiMOS[TM]**
**==> picture [528 x 605] intentionally omitted <==**
**----- Start of picture text -----**<br>
3.0 2.5<br>Pot tf ft<br>CTPPP CTT) |) 0 EEEEEEEEP PE<br>2.5 PF | tf ft tf tt fy<br>2.0<br>Bae j~ | | {| {| [| [ [ {| {[ ff<br>10 mA<br>2.0 FT tT tte EET TE eeSS EE<br>BRR 7Ae 1.5 seaee De<br>1.5 PT | | | | peera EE | ye_ GeePt tf ft em<br>typ<br>ft | | eT——— eT Tt a ee Gn<br>—-— 1.0 Pot ft<br>1.0 PTCCCECC a ee Gn<br>CC |) 6PotEESRSESEEEEEtf ft<br>0.5<br>0.5<br>COPE PFa ot tf eeft tt ftGn<br>| eRe<br>0.0 0.0 PF ot tf tt<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>10 [4] 10 [3]<br>ose S SSS — -55 °C<br>rt | TT TT TT Tt tt yy yy | 25 °C |<br>Piette? eee Te TTT eet tee ee ee | 125 °C po<br>150 °C<br>Ph Ciss<br>10 [2]<br>FERRED s ean<br>10 [3]<br>Coss<br>BC fe 10 [1] LLL<br>PN Crss LETT<br>NI EEE EET SSssSSSes SS<A) A QO (GO GO<br>10 [2]<br>SSS SEE ——— 4 Ht<br>SESSSSSECE EEE SSSEEE SSSSSSSSSeerreECE EEL 10 [0] PtSEtee|<br>es es A Oy QQ QO GO GO |<br>EC a a 2 |<br>10 [1] | 10 | [-1] RAR<br>0 5 10 15 20 25 0.0 0.4 0.8 1.2<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
9
## **OptiMOS[TM]** 5 Power-MOSFET, BSC015NE2LS5I 25 V
**==> picture [526 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 12<br>12 V<br>a | 10 a ee ee<br>5 V<br>LT NET NET ETT ny an<br>NENT ENT Y 20 V<br>25 °C<br>8<br>SNOUT ENT OG<br>10 [1] 100 °C 6<br>2 -TAINGMN [LIME] ONINGTMIN Js2 HtG4-<br>a 4 er A<br>125 °C<br>FT) NTN nr Ane<br>ll NUN ay<br>2<br>TE TLE ANT f f<br>NUN 7 a a<br>10 [0] 0<br>10 TAT [0] 10 [1] TTI 10 [2] 10 [3] | 0 AS 5 = 10 === 15 20 25<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
**==> picture [349 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
Gate charge waveforms<br>10 [-3]<br>125 °C<br>SSS 100 °C ee<br>10 [-4] Peer 75 °C<br>a=ae<br>aS<br>ge 10 [-5]<br>25 °C<br>PotSESE| | | | ft tt tt SSE<br>POPPE eee<br>10 [-6]<br>BREESE SSeS<br>PotSCPE| [| | TT tT tT tT tT tf tt tt tt tT te PaulQ oh)<br>10 [-7]<br>0 oe 5 10 15 20 |}<br>V DS MI<br>I DSS=f( VDS V GS T j<br>I DSS<br>**----- End of picture text -----**<br>
Final Data Sheet
10
5 Power-MOSFET, BSC015NE2LS5I 25 V
**OptiMOS[TM]**
Final Data Sheet
11
5 Power-MOSFET, 25 V BSC015NE2LS5I
**OptiMOS[TM]**
**==> picture [69 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
Dimension in mm<br>**----- End of picture text -----**<br>
Final Data Sheet
12
**OptiMOS[TM]** 5 Power-MOSFET, BSC015NE2LS5I 25 V
BSC015NE2LS5I
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2015-08-06|Release of final version|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
13
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →