BSC014N06NSATMA1

Power MOSFET, N Channel, 60 V, 100 A, 1450 µohm, TDSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 156W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TDSON
Drain Source Voltage Vds: 60V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 1450µohm
Gate Source Threshold Voltage Max: 2.8V

Delivery and price
Units per pack	3000
Price	1.29 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC014N06NS** ES Giineon 

## **MOSFET OptiMOS[TM]** 

## **Features** 

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**----- Start of picture text -----**<br>
* Qualified according to JEDEC 1) _ for target applications<br>**----- End of picture text -----**<br>


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PG-TDSON-8<br>8 5<br>7 6<br>6 7<br>5 “~~ & 8<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>**----- End of picture text -----**<br>


|~~Table~~<br>~~1~~|~~Key ~~|~~Performance~~|~~Performance ~~|~~Parameters~~|~~Parameters~~||||||Drain<br>Pin 5-8|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**|||**Value**||**Unit**|||||||
|_V_DS<br>_R_DS(on),max|||60<br>1.45||V<br>mΩ||Gate<br>Pin 4||||*1|
||||||||||||Source|
|_I_D|||240||A||_*1: Internal body diode_|_*1: Internal body diode_|||Pin 1-3|
|_Q_OSS|||100||nC|||||||
|_Q_G(0V..10V)|||89||nC|||||||



Type **Package Marking** ~~/ Ordering Code Related Links~~ BSC014N06NS PG-TDSON-8 FL 014N06NS - 

1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 

Final Data Sheet 

2 

Rev.�2.5,��2022-08-09 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|240<br>152<br>30|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=50K/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|960|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|580|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|156<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.5|0.8|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.5,��2022-08-09 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=120µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.5<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.2<br>1.6|1.45<br>2.2|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=12.5A|
|Gate resistance1)|_R_G|-|2|3|Ω|-|
|Transconductance|_g_fs|75|150|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|6500|8125|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1500|1875|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|59|118|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|23|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=2Ω|
|Rise time|_t_r|-|10|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=2Ω|
|Turn-off delay time|_t_d(off)|-|43|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=2Ω|
|Fall time|_t_f|-|11|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=2Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|28|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|18|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|16|21|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|26|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|89|104|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.3|-|V|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|78|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|100|125|nC|_V_DD=30V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.5,��2022-08-09 

4 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|156|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|960|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.8|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|52|83|ns|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|139|-|nC|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test. Final Data Sheet 

Rev.�2.5,��2022-08-09 

5 

**OptiMOS[TM] BSC014N06NS** 

**==> picture [539 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Final Data Sheet 

6 

**OptiMOS[TM] BSC014N06NS** 

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**----- Start of picture text -----**<br>
1000 4.0<br>AY 2<br>REESE EE EEE Oe 5 V ee ee<br>10 V 5.5 V<br>3.5<br>Cor CA 7 V PELL ELLE ELLE EEE<br>ARa PET LL LYELLELLE EEE<br>800 S000) 2) See 3.0 PEPE AAL EEE<br>jp EE<br>POCOfp PELL LAALEL LLLELLEEL<br>a y,vy, y|<br>2.5<br>PCC V /<br>600<br>S00 EEEeoneee oFeT TTEL<br>6 V<br>2 Geer te) 2.0 ere<br>20087 OY4 ee ere 6 V<br>S00 7dee ae<br>400<br>aCOZ 1.5 PTT{PT 7 V TP eo<br>a0)  CCC 5.5 V Prey | tt __——<br>10 V<br>/4n5==——— ose Poorer LL LEE<br>COA AZO SSSSSS) ES<br>S)///4 1.0 PTT TT TT TTT TT<br>200 PWT PLE EEE<br>| /20S 5 V 0.5<br>ecco ||<br>FECES) CO<br>0 FCCC 0.0 PELL LL EEEL LLL ELE L LEE LLL<br>0 1 2 3 4 5 0 100 200 300 400 500<br>V DS I D<br>Iv] [Al<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>|), =25°C; parameter: 25 parameter,<br>[Diagram 7: Typ. transfer characteristics «Diagram 8: Typ. forwardtransconductance<br>1000 250<br>COCOoo<br>PEE<br>PEEP EEE EET [AEE]<br>800 YYCCC CECE CCC 200 Pf ff aA<br>PREECE 7<br>FEEEEEEEEEEEEEEAEEEEE 4<br>PEEEEEEEEEE EET EEE LT<br>25 °C<br>600 COPESURERERSREOQG00//20FEC 0000008 150 aa<br>150 °C<br>ea COOeeOoeSOSSSRRRRR00000/ BGQgennnn“lee le Wa7<br>SSSPEE EEE EEE aa<br>400 100<br>PEE EEE EEE EEE EEE |<br>PREETI /<br>PERE AEE<br>200 CEESs 50 of} ff]<br>PREETI<br>n/n<br>CE E EC CECCACECEee<br>0 CEE PCOOCCC CCC CE Y TEEEC 0 Po} ff]<br>0 2 4 6 8 10 0 20 40 60 80 100<br>V GS I D<br>Iv] [Al<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>PL parameters |<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS[TM] BSC014N06NS** 

**==> picture [528 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8 3.5<br>a<br>2.4 3.0<br>Se] 1200 µA<br>PO RR<br>2.0 2.5<br>FG RR<br>120 µA<br>rr} IR<br>1.6 max 2.0<br>e eeeee eee Pe<br>Eee Soe fe COOP ry<br>1.2 typ 1.5<br>SSeS PCN<br>0.8 pe e 1.0 PP [Pe]<br>p yy<br>Pe}<br>0.4 0.5<br>Pp] pe<br>i<br>a<br>0.0 0.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>ee eee r 25 °C r<br>Ciss 25 °C, max<br>Oo ae : 150 °C a<br>150 °C, max<br>a ee ee ee ee i ee ee<br>| pt Ae oe<br>10 [3] ee Coss 10 [2] eeeee7<br>———————<br>——————————— 2 4nne a<br>aS Se<br>a NO<br>10 [2] 10 [1]<br>hjA a _j | LS======A GR 8=SO CO<br>po pt [ [ f ft fT [py fT Pe tT fT fT<br>a Pot ft ft tT tat tp ae<br>> Crss ee ee<br>a ee | | pt tT | eyPe<br>ee<br>10 [1] 10 [0]<br>0 20 40 60 0.0 0.5 1.0 1.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] BSC014N06NS** 

**==> picture [528 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] OO a OO OO OO 12<br>a ee ee Pf]<br>r | [Titi ft TT TTT 30 V<br>ECE EE 10 Pf PY<br>25 °C 12 V 48 V<br>HT SST ee ee e/a<br>100 °C<br>NST 8 Ae<br>LTE TENT SELIM —-—4 A<br>125 °C<br>z<br>z 10 [1] Ce ENKON le 6 2 Of<br>a OO<br>aPe0Ga eeSTTS 4 2 f)W/ aee<br>2<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60 80 100<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j(start) V GS=f( Q gate ); I D =50 A pulsed; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


## **Diagram Gate charge waveforms** 

**==> picture [259 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
65 a es es ee<br>ss a sses<br>64 a es es ee<br>ssa sses4<br>a se ee<br>ss<br>63<br>a  ) A<br>aseee ee<br>a essnse 4<br>62<br>aa sess ee<br>S= a ee4 ee<br>ss<br>61<br>a A<br>Pf ss A<br>aaseft fC CYTee<br>60<br>fF  [7AfT fF A [| J[ Jf JT [|<br>a se2 ee ee4ee<br>a 7A ee<br>59 a 2 a ee ee ee<br>PF [| YY | fT ft ff fT Tf<br>fFPF  f[  [ A[ A| fTfT Ffft JfffJf JTfT JTft ||<br>58 |a YY2[| ff esFT ft {ff Tf<br>PF 4A [fT Ff FT ft ff JT [tf<br>a ss<br>57 a es es ee<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] �Power-Transistor,�60�V BSC014N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

**==> picture [193 x 208] intentionally omitted <==**

|PACKAGE - GROUP<br>NUMBER:|PACKAGE - GROUP<br>NUMBER:|**PG-TDSON-8-U04**|**PG-TDSON-8-U04**|
|---|---|---|---|
|**DIMENSIONS**||MIN.<br>MAX.<br>**MILLIMETERS**||
|**A**||0.90|1.20|
|**A1**||0|0.05|
|**b**||0.26|0.54|
|**c**||0.15|0.35|
|**D**||4.80|5.35|
|**D1**||3.70|4.40|
|**D2**||2.94|3.25|
|**D3**||5.05|5.38|
|**E**||5.70|6.10|
|**E1**||3.43|3.76|
|**E2**||0.69|0.89|
|**e**||1.27||
|**L**||0.45|0.66|
|**L1**||0.69|0.90|
|**aaa**||0.10|0.25|



**==> picture [60 x 35] intentionally omitted <==**

## **Figure�1�����Outline�PG-TDSON-8�FL,�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.5,��2022-08-09 

**OptiMOS[TM] BSC014N06NS** 

Final Data Sheet 

11 

**OptiMOS[TM] BSC014N06NS** 

## BSC014N06NS 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.3|2014-10-16|Rev.2.3|
|2.4|2020-02-28|Update current rating|
|2.5|2022-08-09|Update outline drawing and footnotes|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

12

Updated at April 29, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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