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BSC014N04LSIATMA1
Power MOSFET, N Channel, 40 V, 100 A, 1450 µohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 96W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1450µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.1 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC014N04LSI** ## **MOSFET OptiMOS[TM]** ## **Features** _R_ DS(on) 1) |**Parameter**<br> ~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS|40|V| |_R_DS(on),max|1.45|mΩ| |_I_D|195|A| |_Q_OSS|53|nC| |_Q_G(0V..10V)|55|nC| **==> picture [184 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>ao 5<br>“Agee,<br>1 = 5<br>2 6<br>3 4 ae 7 8<br>4<br>3<br>2<br>1<br>S 1 L a 8 D<br>S 2S 3 1 | |F 7 D6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~| |---|---|---|---| |BSC014N04LSI<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~<br>~~|~~|014N04LI|-<br>~~Related Links~~| 1) J-STD20 and JESD22 Final Data Sheet 1 **OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LSI** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.�2.4,��2020-05-15 **OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LSI** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current1)|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|195<br>123<br>166<br>105<br>31|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W2)| |Pulsed drain current3)|_I_D,pulse|-|-|780|A|_T_C=25°C| |Avalanche current, single pulse4)|_I_AS|-|-|50|A|_T_C=25°C| |Avalanche energy, single pulse|_E_AS|-|-|90|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|96<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W2)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.8|1.3|K/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-| |Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-| > 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. > 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 3) See Diagram 3 for more detailed information > 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.4,��2020-05-15 **OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LSI** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=10mA| |Breakdown voltage temperature<br>coefficient|d_V_(BR)DSS/d_T_j|-|30|-|mV/K|_I_D=10mA,referencedto25°C| |Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA| |Zero gate voltage drain current|_I_DSS|-<br>-|-<br>2|0.5<br>-|mA|_V_DS=32V,_V_GS=0V,_T_j=25°C<br>_V_DS=32V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|1.5<br>1.2|2<br>1.45|mΩ|_V_GS=4.5V,_I_D=50A<br>_V_GS=10V,_I_D=50A| |Gate resistance1)|_R_G|0.45|0.9|1.8|Ω|-| |Transconductance|_g_fs|110|220|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|4000|5600|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Output capacitance1)|_C_oss|-|1200|1680|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|90|180|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|16|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω| |Rise time|_t_r|-|50|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω| |Turn-off delay time|_t_d(off)|-|55|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω| |Fall time|_t_f|-|11|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω| 1) Defined by design. Not subject to production test Final Data Sheet Rev.�2.4,��2020-05-15 4 **OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LSI** **==> picture [120 x 53] intentionally omitted <==** ## **Table�6�����Gate�charge�characteristics[1)]** |**Table6Gatechargecharacte**|**ristics1)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|9.9|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|6.3|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge2)|_Q_gd|-|8.9|12.5|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|12|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge total2)|_Q_g|-|55|77|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|2.5|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge total2)|_Q_g|-|29|41|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V| |Gate charge total, sync. FET|_Q_g(sync)|-|49|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge2)|_Q_oss|-|53|74|nC|_V_DD=20V,_V_GS=0V| ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|96|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|780|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.56|0.7|V|_V_GS=0V,_I_F=12A,_T_j=25°C| |Reverse recoverycharge|_Q_rr|-|20|-|nC|_V_R=20V,_I_F=12A,d_i_F/d_t_=400A/µs| > 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test Final Data Sheet Rev.�2.4,��2020-05-15 5 **OptiMOS[TM] BSC014N04LSI** **==> picture [539 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 120 200<br>i<br>175<br>100<br>S P) P sN<br>150<br>SR E EE \<br>80<br>125<br>PREEEECE| CIEE<br>60 100<br>BN NEEL<br>Ehret<br>75<br>FLERE A<br>40<br>Too REL! 50 LLL ELLENNUP<br>20<br>25<br>PEERING | CECCLECTEELTAD<br>0 Oe 0<br>0 40 80 120 160 0 20 40 60 80 100 120 140 160<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>ov<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [257 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>1 µs<br>Yr | [TT tK [| AECL a<br>10 µs<br>100 µs<br>10 [2] PT URRNES TTF<br>1 ms<br>Ty<br>10 ms<br>2 10 [1] TUTTI NN INTO<br>CUI DC AQUI N TIN<br>A<br>PT LTT TCT PNT NYT ETT<br>10 [0]<br>ee ee ee ee<br>PTNl ETT NAPE<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>V DS [V]<br>I D=f( V DS T C D t p<br>I D<br>**----- End of picture text -----**<br> **==> picture [258 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>10 [0] LETT| CU ERRATETT LETTETih A<br>0.5<br>ATI 0.2 Ee on<br>0.1<br>_ 10 [-1] =Lf ner ET<br>| See 0.05 TIT TTTl<br>0.02<br>0.01<br>= aC<br>a<br>10 [-2] single pulse<br>a<br>LTT TITTTa |<br>10 [-3] YETILETTT E T<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t p [s]<br>Z thJC=f( t p D = t p/ T<br>thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS[TM] BSC014N04LSI** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 800 2.0<br>yy ro Iee<br>3.5 V<br>5 V<br>700<br>10 V<br>ee L a 4 V<br>4.5 V<br>600 | | eeATee 1.5 OO| 4.5 V rn<br>4 V 5 V<br>ns) pr<br>500 n/n 6 V 8 V<br>10 V<br>3.5 V<br>400 SS ae 1.0 a<br>£OIW E<br>300 © / |<br>Zee eee<br>3.2 V<br>SSS ee Se A<br>200 0.5<br>3 V<br>Yf<br>100 2.8 V<br>~——: =| oo<br>0 | 2 ee 0.0 TOTTI<br>0 1 2 3 0 20 40 60 80 100<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 320<br>| y<br>a | =<br>fe || a<br>320 Oeaes 240 ty) tt LeeA. EI<br>es a<br>Se yy,<br>a OY<br>a 240 EERE | 160 COCA<br>ee ey ee<br>a ee 7<br>160 | )<br>ef<br>aee| An/<br>25 °C 80<br>80 150 °C<br>eea | ce<br>fe<br>a A<br>0 0<br>0 EER 1 EREEEES 2 3 4 5 | 0 PCCCCOCCEe 20 40 60 80 100<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 7 **==> picture [532 x 719] intentionally omitted <==** **----- Start of picture text -----**<br> OptiMOS [TM] Power-MOSFET, 40<br>BSC014N04LSI<br>roe on r ance cagram 40:: Typ. gate thresho Id voltag e<br>3.0 2.5<br>2.5 |an8: Drain-sou|an aan an| | |eee oe P| ft |<br>K++ ee<br>2.0<br>||TTtt ooeee—<br>a Zo eee+++|_| |_| |_|<br>an aDA)| an<br>2.0<br>it “state Sonnee E e eenee———<br>max 4nn 1.5 Se<br>5<br>Al Sinnisstinie<br>HHH<br>1.5 _et | SEEEeesCSnEe<br>Seen |_| r | |_|<br>_ A<br>es|| typ on || 1.0 SEEESSeEoCae<br>SEEEeeerence<br>1.0 “a a SEEEeeeEEEEe<br>a<br>| _ |<br>Ca || SEEEeSeEooee<br>—— ee<br>0.5<br>0.5 | SEEEeSeeEneet+<br>EER_= RE+4 +<br>Seerortetezsi =<br>aan a_ EERE-t+t—_<br>0.0 0.0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j re°C] T j<br>R DS(on)=f( T j - I D =50 A:; V GS =10 V V GS(th)=f( T j V GS= V DS I DS=10mA<br>[a OR OV OCOC~C—~SCS<br>11: Typ. capaciiance 3 jagram 2:12: Forward char jorstos 6f reverse dio<br>10 [4] 10 [3] = =<br>——— a 4 -55 °C =—========<br>—————— Ciss 25 °C<br>E14SEESSEEE 125 °C =<br>——SSecnsrn=s=Te 150 °C /iEEE===EbeeSsaaanes-|_| |__|<br>=== r_|4a nna<br>Coss 10 [2] 4400<br>TPT 7 arenae<br>10 [3] ——— E SEeeeeeM.<br>—— ——o —<br>—————eS ————=<br>_Ar_ aa zee<br>NES ——=a-_ |_|<br>Le 2<br>= Ft=_] = 10 [1] E a | yAga |<br>—<br>EO 44 =————<br>Se |_| | | = ======<br>— [<br>Crss Err ===<br>10 [2] LLIN—— ————— Seeara -/2eeeeee||<br>ne TN——a——— [| NS ||Seaeaae= 10 [0] | —<br>===- EESSSaccaa= SSeS=| = = CT SS===<br>=<br>_ ||<br>eS iara7|= eu|cciz i nnpeeeaaae=<br>10 [1] ttniaLEESooo rT | 10 [-1] =i - [| anaa<br>0 10 20 30 40 0.0 0.4 0.8 1.2<br>V DS [Vv] V SD M<br>C =f( V DS V GS =0 V;> f =1 MHz I F=f( V SD == T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM] BSC014N04LSI** **==> picture [526 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 12<br>20 V<br>oo t t 10 Pt tt tt tet ye<br>PONE pd 8 V<br>TTR EEN TT TTT TTT<br>NUTINI 25 °C ETT Sf- 32 V<br>8<br>LUN NG LIL itt<br>100 °C<br>CUMIN ltt | TA<br>10 [1] 6<br>FEE 125 °C ENTETint SETMU Je E E ESpACE<br>oooa ellNT 4 SeeTTT TZaAIT<br>NN f f<br>ELAiEEL NUE\ 2 l AGEREttA<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>ee Diagram Gate charge waveforms<br>10 [-2]<br>—————<br>a Vos<br>es ee ee 125 °C ee ee<br>10 [-3]<br>100 °C<br>eeee re<br>75 °C<br>g 10 [-4] eefo)<br>a ee es<br>a a<br>25 °C<br>10 [-5]<br>See /<br>eee Ep 3<br>10 [-6] Pot tT Q,. Oye<br>0 5 10 15 20 25 30 35<br>V SD<br>I DSS=f( VDS V GS T j<br>I AV V GS<br>I DSS<br>**----- End of picture text -----**<br> ee **Diagram Gate charge waveforms** Final Data Sheet 9 **OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LSI** **==> picture [120 x 53] intentionally omitted <==** ## **5�����Package�Outlines** **==> picture [122 x 43] intentionally omitted <==** **==> picture [368 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B000193699<br>REVISION<br>03<br>MILLIMETERS<br>DIMENSION<br>MIN. MAX. SCALE 10:1<br>A 0.90 1.20<br>A1 0.15 0.35 0 1 2 3mm<br>b 0.26 0.54<br>D 4.80 5.35<br>D1 3.70 4.40 EUROPEAN PROJECTION<br>D2 0.02 0.23<br>E 5.70 6.10<br>E1 5.90 6.42<br>E2 3.88 4.42<br>e 1.27<br>L 0.69 0.90 ISSUE DATE<br>M 0.45 0.69 19.06.2019<br>**----- End of picture text -----**<br> ## **Figure�1�����Outline�TDSON-8�FL,�dimensions�in�mm** Final Data Sheet 10 Rev.�2.4,��2020-05-15 **OptiMOS[TM] �Power-MOSFET,�40�V BSC014N04LSI** **==> picture [120 x 53] intentionally omitted <==** ## PG-TDSON-8FL: Recommended Boardpads & Apertures **==> picture [478 x 270] intentionally omitted <==** ## Figure 2 Outline Boardpads (TDSON-8 FL) Final Data Sheet 11 Rev.�2.4,��2020-05-15 OptiMOS[TM] Power-MOSFET , 40 V BSC014N04LSI Figure 3 Outline Tape (TDSON-8 FL ) Rev. 2.4, 2020-05-15 Final Data Sheet 12 OptiMOS[TM] Power-MOSFET , 40 V BSC014N04LSI **==> picture [120 x 53] intentionally omitted <==** ## Revision History ## BSC014N04LSI ## Revision: 2020-05-15, Rev. 2.4 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.2|2016-05-04|Update footnotes and insert max values| |2.3|2019-10-01|Update package drawings| |2.4|2020-05-15|Update current rating| ## Trademarks All referenced product or service names and trademarks are the property of their respective owners. ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. ## Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4, 2020-05-15 Final Data Sheet 13
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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