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BSC014N03MSGATMA1
Power MOSFET, N Channel, 30 V, 100 A, 0.0012 ohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Power Dissipation: 139W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 139W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0012ohm
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 0.0012ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.693 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSC014N03MS G** ## **OptiMOS ™3 M-Series Power-MOSFET** ## **Features** - Optimized for 5V driver application (Notebook, VGA, POL) - Low FOMSW for High Frequency SMPS - 100% avalanche tested - N-channel |**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**| |---|---|---|---| ||||| |_V_DS||30|V| ||||| |_R_DS(on),max|_V_GS=10 V|1.4|mΩ| ||||| ||_V_GS=4.5 V|1.75|| ||||| |_I_D||100|A| - Very low on-resistance _R_ DS(on) @ _V_ GS=4.5 V - Excellent gate charge x _R_ DS(on) product (FOM) - Qualified according to JEDEC[1)] for target applications - Superior thermal resistance - Pb-free plating; RoHS compliant; - Halogen-free according to IEC61249-2-21 |**Maximum ratings,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||| |---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**| |Continuous drain current|_I_D|_V_GS=10 V,_T_C=25 °C|100<br>A|A| |||_V_GS=10 V,_T_C=100 °C|100|| |||_V_GS=4.5 V,_T_C=25 °C|100|| |||_V_GS=4.5 V,<br>_T_C=100 °C|100|| |||_V_GS=4.5 V,_T_A=25 °C,<br>_R_thJA=50 K/W2)|30|| |Pulsed drain current3)|_I_D,pulse|_T_C=25 °C|400|| |Avalanche current, single pulse4)|_I_AS|_T_C=25 °C|50|| |Avalanche energy, single pulse|_E_AS|_I_D=50 A,_R_GS=25Ω|340<br>mJ|mJ| |Gate source voltage|_V_GS||±20<br>V|V| 1) J-STD20 and JESD22 Rev. 1.5 page 1 2009-10-22 **BSC014N03MS G** **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified ||**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---|---| ||Power dissipation|_P_tot|_T_C=25 °C||139||W| ||||_T_A=25 °C,<br>_R_thJA=50 K/W2)||2.5||| ||Operating and storage temperature|_T_j,_T_stg||-55 ... 150|||°C| ||IEC climatic category; DIN IEC 68-1|||55/150/56|||| |**Parameter**<br>~~ee~~||**Symbol **|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eee~~||||| ||**Thermal characteristics**||||||| |Thermal resistance, junction - case<br>_R_thJC<br>bottom<br>-<br>-<br>0.9<br>K/W<br>top<br>-<br>-<br>20<br>Device on PCB<br>_R_thJA<br>6 cm2cooling area2)<br>-<br>-<br>50<br>~~fF~~|||||||| **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified ## **Static characteristics** |**Static characteristics**||||||| |---|---|---|---|---|---|---| |Drain-source breakdown voltage|_V_(BR)DSS <br>~~pF~~|_V_GS=0 V,_I_D=1 mA<br>~~pF =Fee~~|30<br>~~=Fee~~|-<br>~~=Fee~~|-<br>~~=Fee~~|V| |Gate threshold voltage|_V_GS(th)<br>~~pF~~|_V_DS=_V_GS,_I_D=250 µA<br>~~pF =Fee~~|1<br>~~=Fee~~|-<br>~~=Fee~~|2<br>~~=Fee~~|| |Zero gate voltage drain current|_I_DSS<br>~~pF~~<br>~~-+—_}~~|_V_DS=30 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~pF =Fee~~<br>~~+—_}~~|-<br>~~=Fee~~<br>~~+—_}ft~~|0.1<br>~~=Fee~~<br>~~ft~~|1<br>~~=Fee~~<br>~~ft~~|µA| |||_V_DS=30 V,_V_GS=0 V,<br>_T_j=125 °C<br>~~pF =Fee~~<br>~~+—_}~~|-<br>~~=Fee~~<br>~~+—_}ft~~|10<br>~~=Fee~~<br>~~ft~~|100<br>~~=Fee~~<br>~~ft~~|| |Gate-source leakage current|_I_GSS<br>~~pF~~<br>~~-+—_}~~|_V_GS=16 V,_V_DS=0 V<br>~~pF =Fee~~<br>~~+—_}~~|-<br>~~=Fee~~<br>~~+—_}ft~~|10<br>~~=Fee~~<br>~~ft~~|100<br>~~=Fee~~<br>~~ft~~|nA| |Drain-source on-state resistance|_R_DS(on)<br>~~-+—_}~~<br>~~-—~~|_V_GS=4.5 V,_I_D=30 A<br>~~+—_}~~<br>~~-—~~|-<br>~~+—_} ft~~<br>~~-—~~|1.4<br>~~ft~~<br>~~-—~~|1.75<br>~~ft~~<br>~~-—~~|mΩ| |||_V_GS=10 V,_I_D=30 A<br>~~-—~~|-<br>~~-—~~|1.2<br>~~-—~~|1.4<br>~~-—~~|| |Gate resistance|_R_G<br>~~-—~~|~~-—~~|0.7<br>~~-—~~|1.5<br>~~-—~~|2.6<br>~~-—~~|Ω| |Transconductance|_g_fs<br>~~CC~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=30 A<br>~~CC~~|70<br>~~CC~~|140<br>~~CC~~|-<br>~~CC~~|S| 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 1.5 page 2 2009-10-22 ||||||||**BSC014N03MS G**|**BSC014N03MS G**|**BSC014N03MS G**| |---|---|---|---|---|---|---|---|---|---| |**Parameter**<br>~~ee ee~~||**Symbol Conditions**<br>**min.**<br>~~ee ee~~|||||**Unit**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~||| ||**Dynamic characteristics**||||||||| ||Input capacitance|_C_iss|||-||10000|13000|pF| ||Output capacitance|_C_oss|_V_GS=0 V,_V_DS=15 V,<br>_f_=1 MHz||-||2600|3500|| ||Reverse transfer capacitance|Crss|||-||210|-|| ||Turn-on delay time|_t_d(on)|||-||32|-|ns| ||Rise time|_t_r|_V_DD=15 V,_V_GS=4.5 V,||-||16|-|| ||Turn-off delay time|_t_d(off)|_I_D=30 A,_R_G=1.6Ω||-||43|-|| ||Fall time|_t_f|||-||16|-|| ||Gate Charge Characteristics5)||||||||| ||Gate to source charge<br>Gate charge at threshold<br>Gate to drain charge<br>Switching charge<br>Gate charge total<br>Gate plateau voltage<br>Gate charge total<br>Gate charge total, sync. FET<br>Output charge<br>**Reverse Diode**|_Q_gs<br>-<br>26<br>34<br>nC<br>_Q_g(th)<br>-<br>16<br>21<br>_Q_gd<br>-<br>13<br>22<br>_Q_sw<br>-<br>23<br>35<br>_Q_g<br>-<br>63<br>84<br>_V_plateau<br>-<br>2.6<br>-<br>V<br>_Q_g<br>_V_DD=15 V,_I_D=30 A,<br>_V_GS=0 to 10 V<br>-<br>130<br>173<br>_Q_g(sync)<br>_V_DS=0.1 V,<br>_V_GS=0 to 4.5 V<br>-<br>55<br>73<br>nC<br>_Q_oss<br>_V_DD=15 V,_V_GS=0 V<br>-<br>70<br>93<br>_V_DD=15 V,_I_D=30 A,<br>_V_GS=0 to 4.5 V<br>~~iat~~<br>~~=~~<br>~~ee~~<br>~~P|tT~~<br>~~P|~~<br>~~ft~~<br>~~|~~<br>~~ee~~<br>~~ee~~|||||||| ||Diode continuous forward current|_I_S|||-||-|100|A| ||||_T_C=25 °C||||||| ||Diode pulse current|_I_S,pulse|||-||-|400|| ||Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=30 A,<br>_T_j=25 °C||-||0.79|1.1|V| ||Reverse recovery charge|_Q_rr|_V_R=15 V,_I_F=_I_S,<br>d_i_F/d_t_=400 A/µs||-||-|30|nC| - 4) See figure 13 for more detailed information - 5) See figure 16 for gate charge parameter definition Rev. 1.5 page 3 2009-10-22 **BSC014N03MS G** **==> picture [88 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 1 Power dissipation<br>**----- End of picture text -----**<br> _P_ tot=f( _T_ C) ## **2 Drain current** _I_ D=f( _T_ C) parameter: _V_ GS **==> picture [440 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 150 120<br>100<br>120 4.5 V 10 V<br>80<br>90<br>60<br>60<br>40<br>30<br>20<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I D=f(=f( V DS); ); T C=25 °C; =25 °C; D =0 Z thJC=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [3] 10<br>limited by on-state<br>resistance 1 µs<br>10 µs<br>10 [2] 100 µs<br>DC<br>1<br>1 ms 0.5<br>10 [1]<br>10 ms<br>0.2<br>0.1 0.1<br>10 [0] 0.05<br>0.02<br>0.01<br>10 [-1] ald 0.01 0 sing 0 le pulse 0 0 0 0 1<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>page 4<br> [W] [A]<br>P tot I D<br> [A] [K/W]<br>I D<br> thJC<br>Z<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f(=f( _V_ DS); ); _T_ C=25 °C; =25 °C; _D_ =0 Rev. 1.5 2009-10-22 ## **BSC014N03MS G** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [433 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 300 3<br>3.5 V<br>4 V<br>5 V<br>250<br>10 V<br>3 V<br>200 2 3.2 V<br>3.2 V 3.5 V<br>150 4 V<br>4 . 5 V<br>5 V<br>6 V<br>3 V<br>10 V<br>100 1<br>2.8 V<br>50<br>0 Elan 0<br>0 1 2 3 0 10 20 30 40 50<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>280 320<br>240 280<br>240<br>200<br>200<br>160<br>160<br>120<br>120<br>80<br>80<br>150 °C<br>25 °C<br>40<br>40<br>0 Oe. 0<br>0 1 2 3 4 5 0 40 80 120 160<br>V GS [V] I D [A]<br>page 5<br>]<br>Ω<br> [m<br> [A]<br>I D<br> DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j Rev. 1.5 2009-10-22 **BSC014N03MS G** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA **==> picture [434 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 3 2.5<br>2<br>2<br>1.5<br>98 %<br>typ<br>1<br>1<br>0.5<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> =f( V DS); ); V GS=0 V; f =1 MHz I F=f( V SD)<br>parameter: T j<br>10 [5] 1000<br>25 ° C 150 ° C, 98%<br>10 [4]<br>Ciss<br>100<br>Coss<br>150 °C<br>10 [3]<br>25 °C, 98%<br>Crss<br>10<br>10 [2]<br>10 [1] Sif 1<br>0 10 20 30 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>page 6<br>]<br>Ω<br>[m [V]<br>R DS(on) V GS(th)<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); ); _V_ Rev. 1.5 2009-10-22 **BSC014N03MS G** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 Ω parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=30 A pulsed parameter: _V_ DD **==> picture [472 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 100 12<br>15 V<br>10<br>25 °C<br>6 V<br>100 °C<br>125 °C 24 V<br>si ty ai<br>8<br>10 6<br>4<br>2<br>1 Eile 0<br>1 10 100 1000 0 20 40 60 80 100 120 140<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V BR(DSS)=f( T j); I D=1 mA<br>34<br>V GS<br>32 Q g<br>30<br>28<br>26<br>V gs(th)<br>24<br>22 Q g(th) Q sw Q gate<br>20 Q gs Q gd<br>-60 nig -20 20 60 100 140 180<br>T j [°C]<br>2009-10-22<br> [A] [V]<br>I AV V GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br> Rev. 1.5 page 7 **BSC014N03MS G** **Package Outline** ## **PG-TDSON-8** |**PG-TDSON-8: Outline**| |---| |D| ||<br>|| |——<br>Tel<br>!| |co<br>r<br>|Ty<br>~<br>.| ||| |~| |Le| |**Footprint**<br>Dimensions in mm<br>ee———————<br>po MIN,<br>po AT<br>es<br>Se +<br>Ss+X<br>=<br>ee<br>>Ss ©<br>PoE<br>a=<br>ce<br>p28<br>a FY<br>Se<br>po<br><2<br>Poca<br>HH<br>Poe PH<br>ase <x<br>ee<br>aeS<br>PAT<br>PSTCT<br>PoFett<br>pF? |<br>XS<br>po Fa<br>ss<br>|<br>FAD<br>|OO<br>Y=| Rev. 1.5 page 8 2009-10-22 **BSC014N03MS G** **Package Outline** **PG-TDSON-8: Tape** Dimensions in mm Rev. 1.5 page 9 2009-10-22 **BSC014N03MS G** **Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 page 10 2009-10-22
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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