BSC012N06NSATMA1

Power MOSFET, N Channel, 60 V, 100 A, 1200 µohm, TSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS 5
Qualification: -
Power Dissipation: 214W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TSON
Drain Source Voltage Vds: 60V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 1200µohm
Gate Source Threshold Voltage Max: 2.8V

Delivery and price
Units per pack	1000
Price	1.98 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC012N06NS** 

## **MOSFET** 

## **OptiMOS[TM]** 

**Features** * Optimized for synchronous rectification 

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TSON-8-3<br>8<br>7 5<br>6 6<br>5 7 8<br>y -—<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>**----- End of picture text -----**<br>


|**Parameter**<br>1<br>Key ~~Performance~~|**Value**<br>~~Performance~~ ~~Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|60|V|
|_R_DS(on),max|1.2|mΩ|
|_I_D|306|A|
|_Q_OSS|122|nC|
|_Q_G(0V..10V)|115|nC|



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S 1S 2 T i l 8 D7 D<br>S 3 H IKED a 6 D<br>G 4 iS c 5 D<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC012N06NS<br>~~Type/OrderingCode |~~|TSON-8-3<br>~~|~~<br>~~|~~|012N06N|-<br>~~Related Links~~|



Final Data Sheet 

1 

**OptiMOS[TM] 5�Power-Transistor,�60�V BSC012N06NS** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.3,��2020-02-28 

**OptiMOS[TM] 5�Power-Transistor,�60�V BSC012N06NS** 

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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|306<br>217<br>36|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W2)|
|Pulsed drain current3)|_I_D,pulse|-|-|1224|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|911|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|214<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56|



## **2�����Thermal�characteristics** 

at� _Tj_ =25�°C,�unless�otherwise�specified 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.35|0.7|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.3,��2020-02-28 

**OptiMOS[TM] 5�Power-Transistor,�60�V BSC012N06NS** 

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## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.1|2.8|3.3|V|_V_DS=_V_GS,_I_D=147µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.5<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.9<br>1.2|1.2<br>1.7|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=12.5A|
|Gate resistance1)|_R_G|-|2.2|3.3|Ω|-|
|Transconductance|_g_fs|85|170|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|8300|11000|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1800|2400|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|71|120|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|15|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|54|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|31|-|ns|_V_DD=30V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|35|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|23|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|21|31|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|32|-|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|115|143|nC|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.2|-|V|_V_DD=30V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|102|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|122|163|nC|_V_DD=30V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.3,��2020-02-28 

4 

**OptiMOS[TM] 5�Power-Transistor,�60�V BSC012N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|179|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|1224|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.8|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|41|82|ns|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|170|340|nC|_V_R=30V,_I_F=50A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.3,��2020-02-28 

5 

**OptiMOS[TM] BSC012N06NS** 

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250 es 320 L__<br>a OO ee<br>a 280 NN<br>a ee eee<br>200 s es es O fFNot<br>a OO \<br>240<br>e e eeee<br>a OO Pf | ENE fT<br>a OO 200 ee ee ed ee<br>150<br>—-— “I> t_ Fo {| | | | Nf |]<br>SSB |}FPNesoRsO eKCdS 160 |<br>a a ee<br>100<br>pfrNes ff 120 PFa {|ee[| | | | \ ] |<br>eea OO)ee eee 80 Pf | tf fF ft LN<br>50 CG ee eee<br>aee>ee eeShee ee 40 FoPo {|{| || || || {|{| || yyyf]<br>0 a 0 Pf | ft Ff tf |<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [4] 10 [0]<br>a a A OO ie cnt<br> a FHHICHLL C<br>0.5<br>10 [3]<br>e el 1 µs = =r ome<br>SSS ea 10 µs BBE 0.2 RE 7at<br>10 [2] NTT ONG NTT 10 [-1] Tt le<br>SFR—eecsaes 100 µs sie | Sul 0.1 maarIl<br>} |_| 4 ft {ttt TN 10 ms1 ms a Ns —_ CoCo TeeT_T<br>0.05<br>ma ee ee ee tN} NE et Lee<br>ie 10 [1] DC N = tt<br>an 0.02<br>ee aa Wy VA<br>0.01<br>10 [0] AHNpT IN ONETNDNTE 10 [-2] ceann ||UNE LAME|ETLETT<br>single pulse<br>a OS CACCe<br>10 [-1]<br>ee ell AB<br>——ee PLATT TIME AINE TUTTE ETT LTT<br>SS et SUNITA<br>10 [-2] eee [ll] 10 [-3] ELAINE LE<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS Iv] t p [s]<br>I D=f( V DS T C t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS[TM] BSC012N06NS** 

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Final Data Sheet 

7 

**OptiMOS[TM] BSC012N06NS** 

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10 [5] 10 [4]<br>ce SS<br>A A A | 25 °C Pee<br>25 °C, max<br>rT tert TTT tet tee TET TET TT Ty ty Te [| 175 °C EREEEE<br>BERR RRR EERE EE EEEE SERRE S U 175 °C, max tertesssttteencs<br>PEELEL TELL<br>10 [4]<br>PERE Ciss  | Sa dat<br>10 [3]<br>10 [3] Coss<br>AE eee |* TETRA<br>10 [2]<br>10 [2] ====__===__=__=_=====_=—— ee ee eee eee<br>ESSE Crss eee FEECCCEE CECE CE<br>FERRER SEER<br>10 [1] 10 [1]<br>0 10 20 30 40 50 60 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS Iv] V SD Iv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] BSC012N06NS** 

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10 [2] 12<br>30 V<br>eePTT TTTIN TTT tN hTT 10 TLLLT TELL EEE EEE<br>12 V<br>Pt TTT NUTTINNSTT NYT LLL EEE ET 7ff 48 V<br>25 °C<br>8<br>CTT NIM NI SPERERRD<br>e 10 [1] Sa a 100 °C 6 ERRU EURO E R E RRRTEDYRE AnaA<br>poLUUUNENLUI LIT” Je AYo<br>a 4 TET] | | LLLE EE<br>PL TTT TTT TTT 150 °C f<br>EE THI EL 2 VALET<br>UTM ALLELE<br>10 [0] 0<br>EEE EEE<br>10 [0] 10 [1] TTI 10 [2] TION) 10 [3] 0 aéceectnceetinca 20 40 60 80 100 120<br>t AV Q gate<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
— Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>


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70 Pot tT tT ct ht<br>68 Pot | tT | ht<br>Pot | fT | tt<br>66 | | | fT | tT<br>Pot tT tT Tt<br>64 Po | | | TT<br>eee eee a<br>62 | | | ft | | | eee<br>GS 60 |[tt |peep| tt<br>58 | |pew]pet| |tT| ct dE | |<br>7] | | | | tt<br>- deeper cert oo<br>56 Pot | tT | ht<br>Pot | fT | tt<br>54 Pot tT tT Tt<br>52<br>SE<br>Pot tT tT Tt<br>50 Pot tT tT | tT | ET<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] 5�Power-Transistor,�60�V BSC012N06NS** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

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MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A - 1.10<br>b 0.34 0.54<br>b1 - 0.05<br>c 0.20<br>D 4.90 5.10<br>D1 4.25 4.45<br>E 5.90 6.10<br>E1 4.00 4.20<br>E2 3.14 3.34<br>E3 0.20 0.40<br>e 1.27<br>K2 (0.37)<br>L 0.60 0.80<br>L1 0.43 0.63<br>L2 (0.25)<br>**----- End of picture text -----**<br>


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DOCUMENT NO.<br>Z8B00187559<br>REVISION<br>01<br>SCALE 10:1<br>0 1 2mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>14.12.2017<br>**----- End of picture text -----**<br>


**Figure�1�����Outline�TSON-8-3,�dimensions�in�mm/inches** 

Final Data Sheet 

10 

Rev.�2.3,��2020-02-28 

**OptiMOS[TM] BSC012N06NS** 

## BSC012N06NS 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2018-03-08|Release of final version|
|2.1|2018-12-11|Rev. 2.0|
|2.2|2020-02-06|Update current rating|
|2.3|2020-02-28|Update footnotes|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

11

Updated at April 29, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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