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Illustrative purposes only
BSC011N03LSTATMA1
Power MOSFET, N Channel, 30 V, 100 A, 900 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 115W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 900µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.666 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC011N03LST** ## **MOSFET OptiMOS[TM]** ## **Features** _R_ DS(on) @ _V_ GS 1) |**Parameter**<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS|30|V| |_R_DS(on),max|1.1|mΩ| |_I_D|100|A| |_Q_OSS|40|nC| |_Q_G(0V..10V)|72|nC| **==> picture [143 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>SE ~ 5<br>“Agee,<br>1 < 5<br>2 6<br>3 4 .4 7 8<br>4<br>3<br>2<br>1<br>S 1 L a 8 D<br>S 2 | | 7 D<br>S 3 : ( =) i k 6 D<br>G 4 ae rf 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links| |---|---|---|---| |BSC011N03LST<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~|011N03LT<br>|-<br>| 1) J-STD20 and JESD22 Final Data Sheet 1 **OptiMOS[TM] �Power-MOSFET,�30�V BSC011N03LST** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.�2.1,��2017-10-30 **OptiMOS[TM] �Power-MOSFET,�30�V BSC011N03LST** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>39|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)| |Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C| |Avalanche current, single pulse3)|_I_AS|-|-|50|A|_T_C=25°C| |Avalanche energy, single pulse|_E_AS|-|-|190|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage4)|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|115<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)| |Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|1.3|K/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-| |Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information > 4) The negative rating is for low duty cycle pulse occurrence. No continuous rating is implied Final Data Sheet 3 Rev.�2.1,��2017-10-30 **OptiMOS[TM] �Power-MOSFET,�30�V BSC011N03LST** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|30|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=30V,_V_GS=0V,_T_j=25°C<br>_V_DS=30V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|1.1<br>0.9|1.4<br>1.1|mΩ|_V_GS=4.5V,_I_D=30A<br>_V_GS=10V,_I_D=30A| |Gate resistance1)|_R_G|0.3|0.6|1.2|Ω|-| |Transconductance|_g_fs|85|170|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=30A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|4700|6300|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz| |Output capacitance1)|_C_oss|-|1500|2000|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz| |Reverse transfer capacitance|Crss|-|220|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|6.7|-|ns|_V_DD=15V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω| |Rise time|_t_r|-|8.8|-|ns|_V_DD=15V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω| |Turn-off delay time|_t_d(off)|-|37|-|ns|_V_DD=15V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω| |Fall time|_t_f|-|6.2|-|ns|_V_DD=15V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge1)|_Q_gs|-|11|15|nC|_V_DD=15V,_I_D=30A,_V_GS=0to4.5V| |Gate charge at threshold|_Q_g(th)|-|7.5|-|nC|_V_DD=15V,_I_D=30A,_V_GS=0to4.5V| |Gate to drain charge1)|_Q_gd|-|10.3|13|nC|_V_DD=15V,_I_D=30A,_V_GS=0to4.5V| |Switchingcharge|_Q_sw|-|14|-|nC|_V_DD=15V,_I_D=30A,_V_GS=0to4.5V| |Gate charge total|_Q_g|-|36|48|nC|_V_DD=15V,_I_D=30A,_V_GS=0to4.5V| |Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=15V,_I_D=30A,_V_GS=0to4.5V| |Gate charge total1)|_Q_g|-|72|96|nC|_V_DD=15V,_I_D=30A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|29|-|nC|_V_DS=0.1V,_V_GS=0to4.5V| |Output charge1)|_Q_oss|-|40|53|nC|_V_DD=15V,_V_GS=0V| > 1) Defined by design. Not subject to production test > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.1,��2017-10-30 4 **OptiMOS[TM] �Power-MOSFET,�30�V BSC011N03LST** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.8|1|V|_V_GS=0V,_I_F=30A,_T_j=25°C| |Reverse recoverycharge|_Q_rr|-|20|-|nC|_V_R=15V,_I_F=_I_S,d_i_F/d_t_=400A/µs| Final Data Sheet Rev.�2.1,��2017-10-30 5 **OptiMOS[TM] BSC011N03LST** **==> picture [539 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 140 Pf | ff ff 120 fF | | | | | fl<br>120<br>|| Pf Ff fff 100 | FFft<br>| | | | fll TTY :<br>100<br>ee 80 ee<br>Pf \ | tf eee<br>80<br>60<br>a 60 Ne eee ee<br>Aa<br>3 40<br>40<br>eeNH} EE<br>20<br>20<br>PfSS| | | fl hvKR] ee ee<br>0 FST SSE | 0 FES<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>CT P tot=f( T C) C I D=f( T C V GS ≥ F?<br>VV —“COSCCCTCC‘*”r<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [1]<br>1 µs<br>EE RTH =FHSS<br>10 µs<br>4-H HRTEMHH FTreET<br>10 [2] 10 [0]<br>100 µs 0.5<br>1 ms<br>0.2<br>10 ms<br>HH ANS REE = TL Cea OTC<br>0.1<br>P| ET TTT Oe _ | LT i git Em OEITIIMRNUIDATIT<br>10 [1] DC 10 [-1] 0.05<br>0.02<br>ee Nee — ACL<br>0.01<br>A At C CU CLINE CEC<br>single pulse<br>10 [0] 10 [-2]<br>A CoC CITT<br>10 [-1] aee ieeS ll| 10 [-3] ETALLETTE ETTUIITMTLETTE CLINI EEEETE TTTLET<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS[TM] BSC011N03LST** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 800 2.0<br>10 V 4.5 V en a<br>5 V Po | | [ | | [| [ | | [ |<br>700<br>4 V<br>ee i 3.2 V<br>600 1.5<br>ee | ee<br>3.5 V<br>ee 0)2) ee OOi<br>500 e/a 3.5 V | | 4 V [ [| | [| [| | | [|<br>—— ee 4.5 V<br>5 V<br>400 1.0<br>7 V<br>2 jf7 SS [S][ES] 8 V<br>3.2 V 10 V<br>300<br>ff 7 SS S |S}<br>3 V<br>200 ,nelA, ——— 0.5<br>2<br>2.8 V<br>100 —|<br>a TOO EET<br>Yo OTe ELL<br>0 Po 0.0 a<br>0 1 2 3 0 10 20 30 40 50<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 350<br>TTII 300 Eee<br>320 a Ty TP TP Ler<br>a<br>a 250<br>ee +} } tet |<br>ee nn 4<br>240<br>ee 200 P| | tT Yet ef<br>ae toot eee ”,de COOP<br>a a OO<br>150<br>|| TTA oT<br>160<br>TT LLP8 LLL Piv7:<br>a | | | | fl<br>100<br>fe a 4<br>ee PA | | | pet yy<br>80<br>175 °C<br>50<br>Ss 25 °C ‘Fi | | | | | ft tf<br>SS HY EE JT ttt tt tt tt<br>0 es 0 Pi] | [| | | | ft tl<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS[TM] BSC011N03LST** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 TTT TTI. 2.5 OO<br>2.5 PTT PPP Perey Os a a a<br>2.0<br>A<br>2.0 Pt ff ff} ty yb by aa<br>Pt ff ff} tp tb i 4 1.5 aOESa<br>COCA) aJe FREEa ESSERE<br>1.5 ff ff fol tt ieee> | Osa<br>1.0<br>1.0 Pf | ff | | operrt> ft fy eSOO<br>typ<br>| ff fern=TTT tf | ai a<br>= OO<br>0.5<br>0.5 rT] | |] tt aA<br>a<br>0.0 PTT To) EET 0.0 aOsa a<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>10 [4] Lftlf. || ||. |). | |] || | | 1 10 [3] _—<br>25 °C<br>175 °C<br>a Ciss =<br>Re, Pt FEEEELEELLEL PYLE,<br>SSE ELLLELVLAL LLL<br>PE PNLELE LLL EEL 10 [2] PPTe<br>Coss<br>a PA OQ GO<br>(| | | | | fF J] Jf yyy yyy<br>Pee =———<br>e—Qa 10 [3] aNUTTTV ree—_—— |.— EREEERRRREEEEESPi tT tt tet tT fei Tt tT<br>roIN; ~— 7 fT tT tT yy te /<br>A |<br>Ht IN ttt tt tt 10 [1] === 72===———<br>PT TINE EE ET TE ET Se<br>ae Crss Pt | | Tey pet ft<br>>a<br>|—_ Pi; ttc EP Ey EE EE<br>irr ELE<br>10 [2] 10 [0] EEL EEE<br>0 10 20 30 0.0 0.5 1.0 1.5<br>V DS IV] V SD IV]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM] BSC011N03LST** **==> picture [526 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 12<br>15 V<br>or 10 LTE ELLE ELT 6 V Lt<br>24 V<br>NNN TTT TTT Jf |<br>25 °C<br>oT TTING TN N TT Wi<br>100 °C<br>8<br>TING<br>150 °C<br>UTM Th SL PNET Stitt TA TT<br>10 [1] 6<br>NINN fe EcCESec/eccee<br>SS | A<br>PtteTTT ETTTNNET 4 LYTTI AAA TTT<br>| f p<br>EE LT EEN 2 pe EEE<br>| 7iiti<br>10 [0] 0<br>itt tee ee ty<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70 80<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [349 x 295] intentionally omitted <==** **----- Start of picture text -----**<br> Gate charge waveforms<br>34<br>aaa aa eeee eeee eeeeeee<br>32 i ee ee ee ee eee Ves<br>ee a ee ee ee<br>Se oe<br>30 | ft ft | tee | tf ft ft tt<br>a a se ee ee ee eee<br>[ote TT UT<br>28<br>=S Im]a afTeetT ee ee eee<br>aa a eeee ee ee<br>a a De De De ee ee ee ee<br>26 a a De ee ee ee ee<br>a a ee<br>iaa aa eeeeeeee eeee eeee<br>24<br>a ee ee<br>a De De ee ee ee eee<br>ee<br>22 a a ee ee ee 5<br>a<br>a<br>20 es<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS[TM] BSC011N03LST** Final Data Sheet 10 **OptiMOS[TM]** Power-MOSFET, 30 V **BSC011N03LST** Final Data Sheet 11 **OptiMOS[TM] BSC011N03LST** Final Data Sheet 12 **OptiMOS[TM] BSC011N03LST** ## BSC011N03LST |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2017-03-01|Release of final version| |2.1|2017-10-30|Insert footnote under Vgs| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** Final Data Sheet 13
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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