Image not available
Illustrative purposes only
BSC010N04LSTATMA1
Power MOSFET, N Channel, 40 V, 100 A, 850 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 167W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 850µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSC010N04LST**
## **MOSFET**
## **OptiMOS[TM]**
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**----- Start of picture text -----**<br>
8<br>7<br>6<br>5<br>GES ~<br>“Agee,<br>1 < 5<br>2 6<br>3 4 a4 7 8<br>4<br>3<br>2<br>1<br>S 1 8 D<br>S 2 7 D<br>T i l<br>S 3 | ( =) i 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>
## **Features**
_R_ DS(on) 1)
S 2 **Parameter** 1 Key ~~Performance~~ **Value** ~~Parameters~~ **Unit** S 3 | ( _V_ DS 40 V G 4 L _R_ DS(on),max 1.0 m Ω _I_ D 100 A _Q_ oss 84 nC _Q_ g(0V..10V) 95 nC (PB) ~~Type/OrderingCode |[|__|]~~ **Package Marking**[ Related][Links] BSC010N04LST TDSON-8 FL 010N04LT -
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LST**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.�2.1,��2017-10-30
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LST**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>39|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|50|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|330|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage4)|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|167<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.5|0.9|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
4) The negative rating is for low duty cycle pulse occurrence. No continuous rating is implied
Final Data Sheet 3
Rev.�2.1,��2017-10-30
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LST**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.0<br>0.85|1.3<br>1.0|mΩ|_V_GS=4.5V,_I_D=50A<br>_V_GS=10V,_I_D=50A|
|Gate resistance1)|_R_G|-|0.8|1.6|Ω|-|
|Transconductance|_g_fs|140|270|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|6800|9520|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1900|2660|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|160|320|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|Rise time|_t_r|-|12|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|46|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|Fall time|_t_f|-|9|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|16|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|11|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|15|21|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|21|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|95|133|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|49|69|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|84|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|84|118|nC|_V_DD=20V,_V_GS=0V|
> 1) Defined by design. Not subject to production test
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.1,��2017-10-30
4
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LST**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.81|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|36|72|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge|_Q_rr|-|50|-|nC|_V_R=15V,_I_F=_I_S,d_i_F/d_t_=400A/µs|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.1,��2017-10-30
5
**OptiMOS[TM] BSC010N04LST**
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Final Data Sheet
6
**OptiMOS[TM] BSC010N04LST**
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**----- Start of picture text -----**<br>
400 1.5<br>4.5 V<br>4 V 3.2 V<br>350 LA Th J e e ee e<br>5 V<br>3.5 V<br>er - 3.5 V rr<br>300 10 V 3.2 V<br>4 V<br>Oe ~ ft | LoL<br>HE /. << 1.0 4.5 V5 V er<br>250<br>7 V<br>3 V 8 V<br>10 V<br>| | a ——————_—___<br>200<br>|<br>2.8 V<br>150 WEoo<br>0.5<br>WO pf |} tt ft ft | tf<br>100 VYYo pfPt || || tett tt<br>50 | FPFetree<br>| rs re FPF [etree] ee lil<br>0 a 0.0 FPeeeeeeellil<br>0 1 2 0 20 40 60 80 100<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
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Final Data Sheet
7
**OptiMOS[TM] BSC010N04LST**
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Final Data Sheet
8
**OptiMOS[TM] BSC010N04LST**
**==> picture [528 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] a ee 12<br>a a ee<br>a eeee<br>20 V<br>10<br>TET LETTE TTT<br>NI \ Nt \ \ N yy<br>25 °C 8 V 32 V<br>100 °C<br>ECR CENTS I<br>TENGLT NEL PNT\ 8 ULE EEE Uff<br>Z 10 [1] a SN 150 °C \ WUee de 6 ELLE Vy /4ZL<br>Yr TCE WT TUTTE UE TT TINT TT TTT IN Vy A<br>PTTesIN a ETT TN. TE TTT 4 PTTLTTT LL]WTAAV4<br>ee Nill Lf<br>| EEE LEN 2 | AA T TT<br>\ fi<br>10 [0] 0 ALLEEEEEL EL ELE<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60 80 100<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j(start) V GS=f( Q gate ); I D =50 A pulsed; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
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Gate charge waveforms<br>46<br>a se ee<br>ase es ee se<br>44 a sses es Ves<br>a ee es ee<br>a es es ss eed<br>a ee ee ee ee eee eee ee<br>42 ss sc ee<br>P| [| ft ft De<br>aceee<br>40 a a a ee ee ee ee<br>Ss aP|a | x eetT ee ee ee ee<br>a i a a ss<br>38 a sd es es ee<br>a ee es ee<br>a esee se<br>se<br>36<br>a sses<br>aa sses es eeeeeese<br>ssa es es<br>34<br>ss<br>ss ee ed y<br>a eees e s s ee<br>32 s eses es ed Ram<br>assee<br>ssa es es<br>30 ss es ee es<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] BSC010N04LST**
Final Data Sheet
10
**OptiMOS[TM] BSC010N04LST**
Final Data Sheet
11
**OptiMOS[TM] BSC010N04LST**
Final Data Sheet
12
## **OptiMOS[TM] BSC010N04LST**
## BSC010N04LST
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2017-03-01|Release of final version|
|2.1|2017-10-30|Insert footnote under Vgs|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
13
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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