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Illustrative purposes only
BSC010N04LSIATMA1
Power MOSFET, N Channel, 40 V, 100 A, 1050 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 139W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1050µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.896 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC010N04LSI**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
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**----- Start of picture text -----**<br>
R DS(on)<br>1)<br>**----- End of picture text -----**<br>
|**Parameter**<br> ~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|1.05|mΩ|
|_I_D|100|A|
|_Q_OSS|83|nC|
|_Q_G(0V..10V)|87|nC|
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**----- Start of picture text -----**<br>
8<br>7<br>6<br>SES 5<br>“Agee,<br>1 = 5<br>2 6<br>3 4 ae 7 8<br>4<br>3<br>2<br>1<br>S 1 LI a 8 D<br>S 2 | | 7 D<br>S 3 1 I E 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSC010N04LSI<br>~~Type/OrderingCode~~<br>~~**|**~~|TDSON-8 FL<br>~~**|**~~|010N04LI|-|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LSI**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.�2.2,��2016-05-04
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LSI**
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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>37|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|50|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|230|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|139<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.5|0.9|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.2,��2016-05-04
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LSI**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=10mA|
|Breakdown voltage temperature<br>coefficient|d_V_(BR)DSS/d_T_j|-|30|-|mV/K|_I_D=10mA,referencedto25°C|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>3|0.5<br>-|mA|_V_DS=32V,_V_GS=0V,_T_j=25°C<br>_V_DS=32V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.1<br>0.9|1.4<br>1.05|mΩ|_V_GS=4.5V,_I_D=50A<br>_V_GS=10V,_I_D=50A|
|Gate resistance1)|_R_G|-|0.8|1.6|Ω|-|
|Transconductance|_g_fs|130|260|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|6200|8680|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1900|2660|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|140|280|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|22|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|48|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|72|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|17|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.2,��2016-05-04
4
**OptiMOS[TM] �Power-MOSFET,�40�V BSC010N04LSI**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|15|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|9.9|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge2)|_Q_gd|-|14|20|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|19|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|87|122|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|45|63|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|76|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge2)|_Q_oss|-|83|116|nC|_V_DD=20V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.57|0.7|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|20|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test
Final Data Sheet
Rev.�2.2,��2016-05-04
5
**OptiMOS[TM] BSC010N04LSI**
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Final Data Sheet
6
**OptiMOS[TM] BSC010N04LSI**
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Final Data Sheet
7
**OptiMOS[TM] BSC010N04LSI**
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Final Data Sheet
8
**OptiMOS[TM] BSC010N04LSI**
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10 [2] 12<br>20 V<br>| 10 PLTT LLL EEELE L L 8 V TE<br>25 °C<br>32 V<br>100 °C<br>EE | jp<br>8<br>TIN TBE NNT ELTA |<br>125 °C<br>CUTPSUINGIS|. Hi<br>10 [1] 6<br>po TT ETTNTING TTT<br>HN SA<br>EEeeeNPT NS 4 TTTTTIW TTT PAALT TTTTTTTT<br>PTT ENT f f<br>2<br>ITE ELIE EEN e e<br>UTM ALLL<br>10 [0] 0 EEE EEE<br>10 [0] 10 [1] TTI 10 [2] TTI 10 [3] | 0 Accesses 20 40 60 80 100<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
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Gate charge waveforms<br>**----- End of picture text -----**<br>
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Final Data Sheet
9
**OptiMOS[TM] BSC010N04LSI**
Final Data Sheet
10
**OptiMOS[TM] BSC010N04LSI**
Final Data Sheet
11
**OptiMOS[TM] BSC010N04LSI**
Final Data Sheet
12
**OptiMOS[TM] BSC010N04LSI**
## BSC010N04LSI
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.2|2016-05-04|Update footnotes and insert max values|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
13
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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