Image not available
Illustrative purposes only
BSC010N04LSATMA1
Power MOSFET, N Channel, 40 V, 100 A, 1000 µohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 139W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1000µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.647 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MOSFET
**OptiMOS[TM] OptiMOS[TM]** BSC010N04LS
Final
## **OptiMOS[TM]**
## Power-MOSFET, BSC010N04LS 40 V
## **Features**
**==> picture [35 x 48] intentionally omitted <==**
**----- Start of picture text -----**<br>
R DS(on)<br>1)<br>**----- End of picture text -----**<br>
|**Parameter**<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|1.0|mΩ|
|_I_D|100|A|
|_Q_oss|84|nC|
|_Q_g(0V..10V)|95|nC|
**==> picture [143 x 204] intentionally omitted <==**
**----- Start of picture text -----**<br>
8<br>7<br>6<br>5<br>GE.<br>os ee<br>1 < 5<br>2 6<br>3 4 ""e 7 8<br>4<br>3<br>2<br>1<br>S 1 L I] 8 D<br>S 2 | | 7 D<br>S 3 1) [E p 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>
||**Package**|**Marking**||
|---|---|---|---|
|BSC010N04LS|TDSON-8 FL|010N04LS|-|
1) J-STD20 and JESD22
Final Data Sheet
2
**OptiMOS[TM] �Power-MOSFET,�40�V**
BSC010N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.�2.2,��2014-06-27
**OptiMOS[TM] �Power-MOSFET,�40�V**
BSC010N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **2�����Maximum�ratings**
at� _T_ j�=�25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>38|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|50|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|330|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|139<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **3�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.5|0.9|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See figure 3 for more detailed information
> 3) See figure 13 for more detailed information
Final Data Sheet
Rev.�2.2,��2014-06-27
4
**OptiMOS[TM] �Power-MOSFET,�40�V**
BSC010N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **4�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.0<br>0.85|1.3<br>1.0|mΩ|_V_GS=4.5V,_I_D=50A<br>_V_GS=10V,_I_D=50A|
|Gate resistance1)|_R_G|-|0.8|1.6|Ω|-|
|Transconductance|_g_fs|140|270|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=50A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|6800|9520|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1900|2660|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|160|320|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|Rise time|_t_r|-|12|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|46|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
|Fall time|_t_f|-|9|-|ns|_V_DD=20V,_V_GS=10V,_I_D=30A,<br>_R_G,ext,ext=1.6Ω|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.2,��2014-06-27
5
BSC010N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **OptiMOS[TM] �Power-MOSFET,�40�V**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|16|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|11|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge2)|_Q_gd|-|15|21|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|21|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|95|133|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|49|69|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|84|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge2)|_Q_oss|-|84|118|nC|_V_DD=20V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.81|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime2)|_t_rr|-|36|72|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge|_Q_rr|-|50|-|nC|_V_R=20V,_I_F=50A,d_i_F/d_t_=400A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test
Final Data Sheet
6
Rev.�2.2,��2014-06-27
**OptiMOS[TM]** Power-MOSFET, BSC010N04LS 40 V
## BSC010N04LS
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Final Data Sheet
7
## **OptiMOS[TM]**
## Power-MOSFET, BSC010N04LS 40 V
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Final Data Sheet
8
Power-MOSFET, BSC010N04LS 40 V
## **OptiMOS[TM]**
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Final Data Sheet
9
Power-MOSFET, BSC010N04LS 40 V
## **OptiMOS[TM]**
## BSC010N04LS
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**----- Start of picture text -----**<br>
10 [2] 12<br>20 V<br>A ee P t 10 TPE<br>Po TTI TONGUE O 25 °C RE TTT AAT TTT 8 V 0 32 V<br>CoN CENTS 100 °C VA<br>8<br>TE 125 °C ON UE EPNI SERREESRESREEED Lf<br>10 [1] aiiae NUTeeeST | A 6 PTLLEL LLL LLL ELL<br>ia Nl 4 TTTPL EL EL ELWTAAEETd<br>8 ff<br>2<br>| ee te e<br>ZL LLEEELEELLEELL<br>10 [0] TAME LAI) = 0 as st<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60 80 100<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>py =25 parameters [——SCSC~*~“‘*‘][“][‘*‘S*‘“‘“‘“‘“‘~dCOSSSCSY] SOA psd parameters —SCSC*C=‘“‘*‘*~ *<br>[Diagram 15: Drain-source breakdown voltage_—=—«| [SSCSSSCS Gate charge waveforms<br>46<br>a ss es |<br>a ”<br>44 a ss es es es ss |<br>a a.<br>a es es es<br>42<br>a<br>ee<br>40<br>a<br>s Foe<br>— 38 a eees|<br>a<br>a<br>36<br>a<br>asses |<br>34<br>SESSESSSSESS |]<br>32 a - -<br>a ee ow<br>30<br>a re<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
## ~~[Diagram 15: Drain-source breakdown voltage_—=—«|~~ [SSCSSSCS Gate charge waveforms
Final Data Sheet
10
**OptiMOS[TM]**
Power-MOSFET, BSC010N04LS 40 V
Final Data Sheet
11
Power-MOSFET, BSC010N04LS 40 V
**OptiMOS[TM]**
Final Data Sheet
12
Power-MOSFET, BSC010N04LS 40 V
**OptiMOS[TM]**
Final Data Sheet
13
Power-MOSFET, BSC010N04LS 40 V
## **OptiMOS[TM]**
## BSC010N04LS
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.2|2014-06-27|Rev. 2.2|
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
14
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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