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BSC010N04LS6ATMA1
Power MOSFET, N Channel, 40 V, 100 A, 1000 µohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00089ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6
- Qualification: -
- Power Dissipation: 150W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 1000µohm
- Gate Source Threshold Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.733 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC010N04LS6** ## **MOSFET** ## **OptiMOS** **==> picture [508 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>Features 6<br>5<br>GES ~<br>¢ Optimized for synchronous application “Agee,<br>+ Very low on-resistance R DS(on) 1 = 5<br>2 6<br>*¢ Superior100% avalanchethermal testedresistance 3 4 acS 7 8<br>¢ N-channel<br>¢ Pb-free lead plating; ROHS compliant 4 3<br>* Halogen-free according to IEC61249-2-21 2<br>1<br>¢ 175 °C rated<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>S 1S 2 TL i LJ]l 8 D7 D<br>S 3 6 D<br>Table 1 Key Performance Parameters | | f F<br>Parameter Value Unit<br>G 4 5 D<br>V DS 40 V<br>R DS(on),max 1 m Ω<br>I D 100 A<br>Q oss 73 nC<br>Q G(0V..10V) 67 nC<br>= Q G(0V..4.5V) 32 nC : ,<br>Package Marking<br>Type/OrderingCode | | Related Links<br>BSC010N04LS6 TDSON-8 FL 010N04LS6 -<br>**----- End of picture text -----**<br> Final Data Sheet 1 **OptiMOS[TM�] 6�Power-Transistor,�40�V BSC010N04LS6** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.�2.0,��2018-07-31 **OptiMOS[TM�] 6�Power-Transistor,�40�V BSC010N04LS6** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>40|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)| |Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_A=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|376|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|150<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W1)| |Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|1|°C/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-| |Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.0,��2018-07-31 **OptiMOS[TM�] 6�Power-Transistor,�40�V BSC010N04LS6** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|0.89<br>1.1|1.0<br>1.4|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=50A| |Gate resistance|_R_G|-|1|-|Ω|-| |Transconductance|_g_fs|-|250|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|4600|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Output capacitance1)|_C_oss|-|1500|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|38|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Rise time|_t_r|-|5.0|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Turn-off delay time|_t_d(off)|-|29|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Fall time|_t_f|-|8|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|12|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|7.3|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|8.1|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|13|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|67|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|2.7|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V| |Gate charge total|_Q_g|-|32|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V| |Gate charge total, sync. FET|_Q_g(sync)|-|28|-|nC|_V_DS=0.1V,_V_GS=0to4.5V| |Output charge1)|_Q_oss|-|73|-|nC|_V_DD=20V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.0,��2018-07-31 4 **OptiMOS[TM�] 6�Power-Transistor,�40�V BSC010N04LS6** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.80|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|30|-|ns|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs| |Reverse recoverycharge1)|_Q_rr|-|97|-|nC|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs| 1) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.0,��2018-07-31 5 **OptiMOS** ™ 6 Power-Transistor, 40 V **BSC010N04LS6** **==> picture [538 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 160 350<br>package limit<br>silicon limit<br>a eee = J<br>140 n e 300 re<br>—|\) _ | | | | ee |<br>120<br>250<br>A T | EP S<br>4 HS p S<br>100<br>ee ee<br>200<br>Se ee ee | \<br>80<br>SN<br>Os es fe 150 ERes ee ee<br>60<br>ee ee<br>100<br>40<br>—_|+}~ } A+ | — 2a<br>fH) Oe<br>50<br>20<br>a ee ee ee >> Vi<br>ee eee ee P| [| |<br>0 EN 0 ee ee<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>COCOCOCSCSC“‘“UNNSCNNSCO P tot=f( T C) O I VOOC—C—SSOCOCSCSCSC“‘“‘S D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [1]<br>single pulse<br>1 µs 0.01<br>R N NANTES EL ' 0.02 HCE<br>10 ms 10 µs 0.05<br>10 [2] rm S AS DC S PNTNe 100 µs Seemail I| 0.10.2 TEAeeETT TET<br>0.5<br>SEH NNN GEE & L AIMA<br>FTTH 10 [0] El<br>ONAN EHH EI SEcHe e<br>10 [1]<br>1 ms<br>¢ SSH SANS ES ee<br>eel Ltr rage | TIMI TET LEI<br>10 [0]<br>sce ese | 10 ATI [-1] LIil<br>10 [-1]<br>SSN | THETHHE<br>SSeS 5 ee ACTH CUICCUCHETTETHil<br>PELEell LENA CHIME- ELAINE<br>10 [-2] ee 10 [-2] LT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 ## **OptiMOS** ™ 6 Power-Transistor, 40 V **BSC010N04LS6** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 400 2.8<br>3.5 V 3 V<br>LLL EEL EELELLE —|—__, ——__—__}—<br>350 Tb 4.5 V rH LALLAELE ELL a<br>2.4<br>10 V<br>4 V<br>i FETT/ : TETPTE a ee es<br>300<br>2.0<br>5 V<br>250 HBTHee CEECECEEEECHEE CeCe | seee<br>3.5 V<br>rhiy |/ 1.6 —a<br>< 200 PUPAL EEE ee<br>AMAT a<br>4 V<br>AMAT TT 1.2 Se<br>3 V 4.5 V<br>150 ELLE EE Ee —— 5 V<br>| pe a<br>LTT eer a 10 V<br>0.8<br>100<br>[ 4 2.8 V<br>50 WAereYA | 0.4 aa<br>WATTLE EEL EEL EEL a a a<br>V/ es ss<br>FLEE EEE a<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 200<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 2.8<br>Ree ae ee eee<br>SERERSRREROGREE SGRRRRE SEER<br>350<br>2.4<br>PLL LT ETT TTT TE PP ET<br> ET LEE LEE ELE EEL EECA CAR<br>300<br>PEL | 2.0 PET TTT PrP et iINe Tee ee eee eT<br>250 ELLE LLL EEE ELE FCCP SEE<br>175 °C<br>ee ] 1.6 po LP |<br>ee GOSS 088) 0808s ==<br>200<br>| |<br>1.2<br>150<br>COCCHI | EEREEEEEESSEEE 25 °C EEE<br>PLL LEE LLL LLLPi ELLE PTTFE T E T eTEEEEEEECEFtT ty TAAL PET TET yy<br>0.8<br>100 PTT TT TTT TA TT TET TET eT Tee ey yeEE ey| REESE<br>YT ET TL TELL AR LEE EEL PL ET EET E T E ET T e yT eT e yeyy ey ye e yeyeyeyey<br>Re ‘ se 0.4 LETrFEt T PET P e Tery ety etyeeeeye e eerFe Ff<br>50<br>175 °C EEEEEEEE<br>0 CO PTT eyLEELA 25 °C E) 0.0 LETFEE TET ETTCC EE tetCEEEEEe ete E EEEyeyEEee E<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS BSC010N04LS6** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 PTT TITTLE LLL EEL 2.4 LL ET TT TTT TTT TTT TT EET<br>PETE LE EET TEE TTT TET TET EET EET<br>Teed ATT CELE LITLE LITLE ELE LL<br>2.0<br>PCCP EEE EEE EC Soe<br>1.6 A LTT PSA pteEEE beepET EE ETE beeEE EE EEEERP<br>~~ >< PN<br>° PECEECEEELEELELL PEELE 1.6 Litt TTT TT PANT SSE EE ET<br>nq 1.2 POT A LEE TET ETT TTT MALERAN EE EEE EEE<br>2 Zi PEE TET TTT TTT TET ANTU TEEN EEE EEE<br>3 PELLET LEELAL LO S FETT TTT TTT TTT TTT“STS PNP EN TTT TT<br>1.2<br>@ | IN N<br>2500 µA<br>(o} 0.8 a“<br>E POET CEE ELE eff pee pitt beste be Ny |<br>2 COAT<br>= ee 0.8 Ss<br>§ PPE TT TTT TTT TT ET TET TE ET EN TI<br>no PETE EEE EEE FEEEEEEEEEEEEE Eee 250 µA<br>0.4<br>TTT 0.4 PE EET TET TET ET EEE EE EE<br>ST PE ET TTT TTT TTT TET EET EET EET<br>PETE LEE TET ETT TTT ET TTTEEE<br>0.0 PETE TTT TEE E TEET E TTEE EEE E EEEELE] 0.0 PCCPCOEEEEEEee<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br> **==> picture [530 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>SS SS PSE<br>we 4 25 °C AEE EE EEE EEE<br>A 7 25 °C, max POE<br>Ciss 175 °C<br>FCPSNS 1 175 °C, max FOC A Ce4<br>10 [3] 10 [2]<br>ee Coss SS<br>A ee fe<br>ee Lf Ta ee<br>PN]Rs Ne ee neeeea e eAeee<br>a Se<br>& BN eee eee LETT TEE LEFT EE<br>10 [2] Se 10 [1] Se Se ee<br>aPN A2<br>yas| | [| ~— | NJ TFT TT [ JT Tt T JT 7 AeeeBOSS SRSeeAYeeeees seece eeeee<br>SS BERR ee<br>PTPULtT eT [EEE)] Crss Pr PELL LLLTELEEEE<br>10 [1] EEL EEE 10 [0] EEEEEELEUTAL EEE<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS BSC010N04LS6** **==> picture [529 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>PE EE Et 8 V CECA<br>20 V<br>er At<br>32 V<br>a er 1 rOEEEEeeE EEE<br>——} ee e e e,Zee<br>8<br> S$} 4 X P E E AEC<br>ECTSPLT TINT 25 °C SERSSSHS0505050800007lA 4000080<br>NOU TEIN Tran CEPR<br>N N NU BRR, Cee<br>6<br>\ \ FCCB E CEPEATRR, eeAR<br>—z 10 [1] a0\ PN = EEE HH<br>100 °C<br>a 4<br>a /,<br>PT ETT ET NTEi L ittIT TITtttTITTI yerYAP Te ETTT TE tT<br>XY LIT T TT] Y eti tt tT tT ET TT TTT<br>ll S008? ann 40S SSeSessen<br>Nt 2 Bee? A<br>BaD<br>150 °C LIZA TTT ET EE EE<br>LIAL TT ttt tte ee eee TT TT<br>PARR<br>AREEREEE<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50 60 70<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [148 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Diagram Gate charge waveforms<br>**----- End of picture text -----**<br> **==> picture [259 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 44 TIITIIIILILITILI ILL<br>FOCCEEE EEE<br>FOC<br>FOCCEEEEE Eee<br>FOC<br>43<br>POCCCEE er<br>SSS 4<br>COCCCEE Ee YW<br>FOCCEEE EEE YE<br>42 SSS Zee<br>FOCEEE Ee A<br>COCCI<br>FOCCCEE<br>> POCOEE VWEee<br>a 41 COCO<br>FOCCCEECeee Ae<br>COCCCEE A<br>CEEEEEL<br>COCOAAC<br>BSG ae<br>40<br>SSSR4<br>BSG4<br>SeSGee 4a<br>COCO CAAL<br>BeSG0Seee<br>39<br>COOOLFECCOO AVEC CCC EEE<br>COLE<br>38 FOC<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS BSC010N04LS6** Final Data Sheet 10 **OptiMOS BSC010N04LS6** Final Data Sheet 11 **OptiMOS BSC010N04LS6** ## BSC010N04LS6 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2018-07-31|Release of final version| ## **Trademarks** ## **erratum@infineon.com** ## **Information** ## **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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