Image not available
Illustrative purposes only
BSC009NE2LSATMA1
Power MOSFET, N Channel, 25 V, 100 A, 900 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):750µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Po
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 96W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 25V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 900µohm
- Gate Source Threshold Voltage Max: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.596 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC009NE2LS**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
¢ Optimized for e-fuse and ORing application _R_ DS(on) _V_ GS
1)
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|**Parameter**<br>Table 1<br>Key Performance|**Value**<br>PerformanceParameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|25|V|
|_R_DS(on),max|0.9|mΩ|
|_I_D|255|A|
|_Q_OSS|38|nC|
|_Q_G(0V..10V)|126|nC|
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S 1 8 D<br>S 2 c c 7 D<br>S 3 6 D<br>: BD I b<br>G 4 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC009NE2LS<br>~~Type/OrderingCode |~~|PG-TDSON-8<br>~~|~~<br>~~|~~|009NE2LS|-<br>~~Related Links~~|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] �Power-MOSFET,�25�V BSC009NE2LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.�2.5,��2020-06-17
**OptiMOS[TM] �Power-MOSFET,�25�V BSC009NE2LS**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|255<br>161<br>221<br>139<br>41|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W2)|
|Pulsed drain current3)|_I_D,pulse|-|-|1020|A|_T_C=25°C|
|Avalanche current, single pulse4)|_I_AS|-|-|50|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|190|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|96<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.3|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.5,��2020-06-17
**OptiMOS[TM] �Power-MOSFET,�25�V BSC009NE2LS**
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## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1|-|2.2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|10<br>100|µA|_V_DS=25V,_V_GS=0V,_T_j=25°C<br>_V_DS=25V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.0<br>0.75|1.2<br>0.9|mΩ|_V_GS=4.5V,_I_D=30A<br>_V_GS=10V,_I_D=30A|
|Gate resistance|_R_G|0.4|0.8|1.6|Ω|-|
|Transconductance|_g_fs|85|170|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=30A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|5800|7714|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|1900|2527|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|1700|-|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|33|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|48|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|19|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge1)|_Q_gs|-|14|19|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|9|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|37|56|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|41|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|72|96|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.3|-|V|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|126|168|nC|_V_DD=12V,_I_D=30A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|43|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|38|51|nC|_V_DD=12V,_V_GS=0V|
> 1) Defined by design. Not subject to production test
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.5,��2020-06-17
4
**OptiMOS[TM] �Power-MOSFET,�25�V BSC009NE2LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|1020|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.8|1|V|_V_GS=0V,_I_F=30A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|20|-|nC|_V_R=15V,_I_F=_I_S,d_i_F/d_t_=400A/µs|
Final Data Sheet
Rev.�2.5,��2020-06-17
5
**OptiMOS[TM] BSC009NE2LS**
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**----- Start of picture text -----**<br>
120 280<br>ee eee a A<br>100 ee 240 a<br>— rte [tTtNEPrreertererereey]<br>mr fy<br>PP<br>-~ 200 FECESNEP<br>80 E NO) PrPrPrprprpryhXereererES CERES<br> | BEEEEERREFREEEEE<br>N e Aere fy<br>e= 60 >DNC le< 160 rFrtrtrfrrtrtftrYytltfrtleyGREER SNS<br>| 120 id<br>| EN | ee<br>40 NeS rrrrrtrtrtrrtrtsetrtf [rrtrrrtretrrNet] til<br>80<br>\ sO<br>ee eee eee oe reeAtl<br>\ rrrrrrrprerrerrerein tl<br>. rrrtrrrtretrrtyitt]<br>20<br>40<br>ee A<br>: Frrrrrrrfrfrrertl<br>0 ee [ee] [eee] 0 “TTPrFrrrrrrprrrreryrEye TL flyety fl<br>0 40 80 120 160 0 20 40 60 80 100 120 140 160<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>Diagram 3: Safe operating area Diagram 4: Max. transient thermal impedance<br>10 [4] 10 [1]<br>PEE FF CeeTCE<br>10 [3] TT ATT T TT ME ETT TTT TET<br>aa 10 µs SS 1 µs Cer 10 [0] Ee eee ee<br>100 µs 0.5<br>10 [2] 0.2<br>7 Nee |. SEC 0.1<br>1 ms<br>10 [-1]<br>0.05<br>10 ms<br>10 [1] _———— ——— — DC a tt 0.02 CY<br>ee ee a ETA TTTTT<br>0.01<br>10 [-2]<br>SoH SCN EE All single pulse<br>10 [0]<br>Se ee LT TT TTT)<br>SSH ESE | CHCA<br>a Cn CHT<br>10 [-1] CUTIE NET 10 [-3] AVE CUTIE ETT ETE VE ET<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC009NE2LS**
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**----- Start of picture text -----**<br>
800 2.0<br>10 V 4.5 V<br>4 V<br>5 V<br>a a<br>700 — Uf fo ee<br>600 1.5 3.2 V<br>— Tif | =) SSS<br>3.5 V<br>500 3.5 V<br>)i 4 V a<br>400 1.0 4.5 V<br>5 V<br>ee oe 300 lf 3.2 V —oe 7 V = 8 V ——————<br>10 V<br>a ee<br>3 V<br>200 0.5<br>|Zee<br>2.8 V<br>100 —————— i a<br>|Yo OO<br>j OTe ELL<br>0 2 ee ee 0.0 a<br>0 1 2 3 0 10 20 30 40 50<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 400<br>| [TTT LLL LL LE<br>a | fe<br>i<br>a i<br>320 320<br>aa<br>|ee s,s<br>a a | iaa<br>240 240<br>Tee eeA<br>zo ff<br>fe | A<br>a | ISAT LLL<br>160 160<br>a i 2<br>PTL LLL ey,<br>fe a fA iy a es<br>80 a F 80 op ae es<br>A 150 °C 25 °C a<br>fe A 5 a<br>fe YA A a<br>0 a > , A 0 a<br>0 1 2 3 4 5 0 40 80 120 160<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC009NE2LS**
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**----- Start of picture text -----**<br>
3.0 2.5<br>PPePpppppp<br>PEt; tL EEE LE FSS SSSSESE<br>2.5 COCA AAepee ef<br>|) Bee 2.0<br>rtfttttseseeytlteT<br>rPrtftttteteseeretrttrTt<br>rmftffttftsepsepepetfefTrltd<br>2.0<br>CECE |ee 1.5 aGRREeeee 250 µA SSErt<br>COPE EECE Je EERE| |_<br>1.5 PECEPP O s<br> PP) |) 1.0 eeeO<br>1.0 FT | ft ty yf pee | a sO OO OO Os<br>Pf | | | peereerT | ff | iPetpetPP NT<br>typ<br>0.5<br>0.5 pe| SSeee Aartfttttseseeytlt<br>PCCPEPPPP rPtfttetetepepePprteT<br>PT) GER REEREEERE<br>a<br>0.0 PEE E_ LT EEE LLL 0.0 EHPT<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j ); I D =30A; V GS =10V V GS(th)=f( T j ); V GS= V DS ; I D =250 yA<br>Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode<br>10 [4] 10 [4]<br>BEE EEE EEE ne f ==================<br>25 °C<br>Pa Ciss ' ee<br>eee : 25 °C, max150 °C FEE EEE EEE<br>ERT TH 150 °C, max O<br>10 [3]<br>PNINUEETTTEEEET ——————————— SSS<br>Coss<br>TPSoS XE{C. | FREESEee.REESEREESE aneerro<br>Pannen Crss LTT TTT TTT ttt tet ttt i tier rt tt Tt ke<br>razSERRE 10 [3] iii...See fe< 10 [2] SALI A “ L<br>EEE ==-__=_==____==_- -=__=-=======<br>EEEee EEE EEEEEE OOERR EERE EEEFAREoe EE<br>FECL EEELEEEEEL LETT ETT ETT TT aE FETE EEE<br>POPPE 10 [1] EEEELLLLLLFLLLVRE TEE<br>ATLL ELLE EEE SSS55S555a0S2n7eeBERR eeeeseeedeSan seeaeaaeaaeeeee<br>DePEELE EEEee<br>10 [2] 10 [0]<br>0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS IV] V SD IV]<br>C =f( V DS ), V GS =O V; f =1 MHz I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] BSC009NE2LS**
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**----- Start of picture text -----**<br>
10 [2] 12<br>12 V<br>EEa Ne 10 PLETTTEE TTT EEETTTEE AYYyEY ET<br>100 °C 25 °C 5 V<br>125 °C<br>AS 8 LZ A}<br>20 V<br>|| Ht AeA<br>10 [1] 6<br>OUTTA Je EERE Ee<br>SSS) LLoF<br>aeee Nl 4 LETTTT LIAAYASVETTTLd<br>| S| LY<br>eee 2<br>UVTI AREEEEREEEREE<br>10 [0] 0<br>10 [0] 10 [1] PAIN 10 [2] IM) 10 [3] 0 ASSeseeererere 20 40 60 80 100 120 140<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
OO **Diagram Gate charge waveforms**
**==> picture [259 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
28 PTT ee tT et tT tt<br>27<br>PT tT tee te ey<br>pt tT ee tT TT | er<br>26 PT tT ee tT | he<br>PT | tt tr yt Tt<br>25<br>Pt | | pee<br>- LLLP<br>TT Tt tt<br>eae 24<br>a<br>23 Pt tT te et eet ttt<br>PT tT ee tT ee tT tt<br>22 eePT tT eet eet ttt<br>21<br>PT tT ee tT ee tT tt<br>PT tT ee tT ee tT tt<br>20 pT} Eye ee yey<br>-60 -20 20 60 100 140 180<br>T j rel<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] �Power-MOSFET,�25�V BSC009NE2LS**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
**==> picture [123 x 43] intentionally omitted <==**
|1.27<br>**MILLIMETERS**<br>0.90<br>1.20<br>0.34<br>0.54<br>0.03<br>0.23<br>3.88<br>4.31<br>0.45<br>0.71<br>**MIN.**<br>**MAX.**<br>0.45<br>0.69<br>0.15<br>0.35<br>3.90<br>4.40<br>4.80<br>5.35<br>5.70<br>6.10<br>5.90<br>6.42||Z8B00003332<br>|**.**|
|---|---|---|---|
|||**REVISION**<br>07||
||0|1<br>**10:1**<br>**SCALE**<br>2|3mm|
|||||
||**EU**|**ROPEAN PROJE**|**CTION**|
|||**ISSUE DATE**<br>06.06.2019||
## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.5,��2020-06-17
**OptiMOS[TM] �Power-MOSFET,�25�V BSC009NE2LS**
**==> picture [120 x 53] intentionally omitted <==**
**==> picture [491 x 298] intentionally omitted <==**
**----- Start of picture text -----**<br>
PG-TDSON-8: Recommended Boardpads & Apertures<br>1.905 1.905<br>1.27 0.6 1.27 0.5<br>3x 3x<br>1.6<br>0.2 1.5<br>1.27 0.5 1.27 0.4<br>3x 3x<br>1.905 1.905<br>copper solder mask stencil apertures all dimensions in mm<br>0.8<br>0.2 0.75<br>3.325 2.9<br>4.455<br>1.5<br>5<br>7<br>2.863 2.863 80. 0.825<br>0.925<br>**----- End of picture text -----**<br>
## Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.�2.5,��2020-06-17
OptiMOS[TM] Power-MOSFET , 25 V BSC009NE2LS
**==> picture [69 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
Dimension in mm<br>**----- End of picture text -----**<br>
Figure 3 Outline Tape (TDSON-8)
Rev. 2.5, 2020-06-17
Final Data Sheet
12
OptiMOS[TM] Power-MOSFET , 25 V BSC009NE2LS
**==> picture [120 x 53] intentionally omitted <==**
## Revision History
BSC009NE2LS
## Revision: 2020-06-17, Rev. 2.5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.4|2020-02-24|Update package drawings and footnotes|
|2.5|2020-06-17|Update current rating|
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## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
## Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.5, 2020-06-17
Final Data Sheet
13
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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