Image not available
Illustrative purposes only
BSC007N04LS6ATMA1
Power MOSFET, N Channel, 40 V, 100 A, 700 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6
- Qualification: -
- Power Dissipation: 188W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 700µohm
- Gate Source Threshold Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.3 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC007N04LS6**
## **MOSFET**
## **OptiMOS**
**==> picture [508 x 381] intentionally omitted <==**
**----- Start of picture text -----**<br>
8<br>7<br>Features 6<br>5<br>GES ~<br>¢ Optimized for synchronous application “Agee,<br>+ Very low on-resistance R DS(on) 1 = 5<br>2 6<br>*¢ Superior100% avalanchethermal testedresistance 3 4 acS 7 8<br>¢ N-channel<br>¢ Pb-free lead plating; ROHS compliant 4 3<br>* Halogen-free according to IEC61249-2-21 2<br>1<br>¢ 175 °C rated<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>S 1S 2 TL i LJ]l 8 D7 D<br>S 3 6 D<br>Table 1 Key Performance Parameters | | f F<br>Parameter Value Unit<br>G 4 5 D<br>V DS 40 V<br>R DS(on),max 0.7 m Ω<br>I D 100 A<br>Q oss 103 nC<br>Q G(0V..10V) 94 nC<br>= Q G(0V..4.5V) 45 nC : ,<br>Package Marking<br>Type/OrderingCode | | Related Links<br>BSC007N04LS6 TDSON-8 FL 07N04LS6 -<br>**----- End of picture text -----**<br>
Final Data Sheet
1
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC007N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.�2.0,��2018-07-31
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC007N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|100<br>100<br>100<br>100<br>48|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|400|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|674|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|188<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|0.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2018-07-31
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC007N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.62<br>0.8|0.7<br>1.0|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=50A|
|Gate resistance|_R_G|-|1|-|Ω|-|
|Transconductance|_g_fs|-|300|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|6500|8400|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|2100|2700|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|51|89|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|8|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|6|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|40|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|13|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|17|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|10.3|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|11.2|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|18|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|94|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.6|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|45|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|39|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|103|-|nC|_V_DD=20V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.0,��2018-07-31
4
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSC007N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.78|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|36|-|ns|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge1)|_Q_rr|-|133|-|nC|_V_R=20V,_I_F=10A,d_i_F/d_t_=400A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2018-07-31
5
**OptiMOS BSC007N04LS6**
**==> picture [539 x 287] intentionally omitted <==**
**----- Start of picture text -----**<br>
200 rT 500 S package limit s<br>silicon limit<br>175 — [oN] f=tefe ee n<br>\ 400 s OO C<br>\ O O<br>150125 LON ELL 300 aaE P T SS LTST<br>OG<br>5 a a Ca<br>100<br>=. : Sp<br>\ 200 ER<br>75 \ aAOO<br>50 \ sO<br>a<br>100<br>\ a<br>25 \<br>SC<br>0 0 a<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>0 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>single pulse<br>1 µs 0.01<br>A SO ES 10 µs HT ' 0.02 HC<br>10 ms 0.05<br>10 [2] CATAo DC SONTINNS 100 µs | ATIT 1| 0.10.2 MUTIaCIT<br>0.5<br>SS N L A A<br>a 10 [0] IL El<br>10 [1] TE NANT TT Ea —|{.—-| |--- |<br>=== ee<br>1 ms<br>= eee PS Ee a e<br>EAH EEN EEHHtE S ST CT esserrrin OTT COT<br>10 [0] TTT PTTTTIN NTNU TTT TM ey TIM ETT ETE<br>10 [-1]<br>Sseeeesere | CAT ICT<br>a Seon |, eee<br>10 [-1] ell eee rn rn<br>== SS SS eae 2dill<br>ee eel CAI ETI TAIN ETM ETT<br>Neee LEME EEE<br>10 [-2] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS** ™ 6 Power-Transistor, 40 V **BSC007N04LS6**
**==> picture [528 x 633] intentionally omitted <==**
**----- Start of picture text -----**<br>
400 2.00<br>3 V<br>5 V<br>4.5 V<br>350 CU EEE EEE 1.75 ft |a Pf<br>3.5 V<br>pad efi ETE E IEE ><br>4 V<br>300250 OePUTTen ETTFELTae ETTEEETET 1.501.25 |aff} yt| | ft]pf<br>10 V<br>3 V<br>3.5 V<br>ee | EE<br>: 200 ma 1.00 Cee<br>CaLTT | an SSE 4 V<br>4.5 V<br>150 | 0.75 5 V<br>2.8 V 10 V<br>100 ee | 0.50<br>WVCECCCECECTCEE eee ee ee<br>500 eTASR|PTLFERREDTTTOES EEE cane EEREE 0.250.00 ff}ff} ytyt pfPf |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 200<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>400 2.00<br>PEESeTEE HAIMA\ ETA<br>350 1.75<br>PEEL EEE \<br>300 1.50<br>HERES | ONT<br>PEELE EE HATAST<br>250 PEELE ELLE EE EEE 1.25 Dean<br>175 °C<br>xz 200 IITAPEE EEEETT) sve 1.00 THVT N TTT) TATtr<br>eee HATTA<br>150 PEE EEE 0.75 NL<br>25 °C<br>PEE EEE HEEL EAT) ppp<br>100 0.50<br>ETT TT er<br>50 EEE 0.25<br>HERE | CTT<br>175 °C<br>0 SORA 25 °C ee 0.00<br>0 1 2 3 4 5 0 2 4 6 8 10<br>M A | UDI<br>V GS [V] V GS [V]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS BSC007N04LS6**
**==> picture [528 x 633] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 2.00<br>ELLE EEE need<br>PCECEECEC EEC CIN oN<br>CO 1.75 neared<br>1.6<br>PCCP TTTTTTPR SPN TTT<br>1.50<br>s SERRA RRRE000R000R0007400000 PTE<br>8 CO \ N<br>1.25<br>8 1.2 CeCepeeececeeee eee ITN<br>2 Ce SON<br>2 Cee | 1.00 TT TTY 2500 µA<br>s C Oeaee | \<br>0.8<br>2BCRP CeePee 0.75 \<br>250 µA<br>@ | Coceeeeeecececcec ee 0.50<br>0.4<br>PCECEECECSE | 0.25 TAIN<br>PCECEECEC EELELLE<br>0.0 PCECCECECELECCECE ELLEELE 0.00 TTT<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>Sj Ciss f— 25 °C ee e EEE<br>a a a ee (| 25 °C, max IRE<br>rt [| | NET tT tT ft tT tT eT tT fT [| 175 °C IRRRE<br>ri ft i[T_ net, ETT | Tt ft fl | 175 °C, max MeL ELL LRA Pe<br>SSSeEe SSeeeeeee TTT AT er<br>Coss<br>10 [3] EEEEr | 10 [2] EEL We<br>Np FEEEFEEEE EER ERE EER GEESE EES<br>ac rot INE [TT tT f fT fT tT Tt fT tT yt tT _ LETT TTT TELE lTyyy Tu TP ya T T<br>& |pftttTRE| | AP TtETetTyttTyet tt | oye BERRSOEUR ERREE? eeERY EPSPsR SREEEREED<br>BREEN LEE FALE LE<br>10 [2] 10 [1]<br>=== == == See eae ssar See Fee seeaaeeaae<br>a SEER EEESAS<br>Crss<br>1SSS| {| | [| | [| [ [ [|et eeSSS S eR eeeeRee<br>Pi Tt}; Ee ELE eEL LL y HERE tT<br>10 [1] EEE LLL EEE 10 [0] LEEGLEEGEPLEE| ELE<br>0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>GS(th)<br>V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS BSC007N04LS6**
**==> picture [528 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 10<br>PE EE Et 8 V POPE<br>a a 1 20 V TTL ELLE<br>32 V<br>ee ee e e eAAT<br>PL TTTTING TEEN, EEN TET 8 TEE T EET TTT Ty a eee<br>PTE NETTIE NV asl 25 °C Het ttA<br>LTE AN NI NN LTT TET E TT TT ee tty ye<br>TANCE INS HITT P PE<br>\ \ . LETT TET TET yer<br>6<br>\ \ FPPeeSRYeee AeYee<br>100 °C<br>z 10 [1] his Be eeeA<br>EEE EE EE EHH SEE EHH COCEEEELLLLAA CECE<br>a a 4 y<br>ell /<br>PTE EET EET nq BERPCO R EES, 42RETO eee<br>150 °C<br>2 LT TA<br>Be 4<br>ED4B<br>By)SER<br>V4Eee<br>AREER<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60 80 100<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
**==> picture [148 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>
**==> picture [259 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
44 TTITITTTILILITITI ILI<br>PEPE EEE<br>FEEEEE<br>PEPE EEE<br>CEE<br>43<br>Bee eee eer)<br>S eee eee<br>Bee ae<br>PEPEYT<br>Bae<br>42 FEEEee4<br>Bee eee<br>FEE<br>PEPE<br>> CEE AEEee)<br>a 41 FEE CEE<br>CECE)<br>FEE EE<br>See, eee<br>Bee S eeeeee<br>PEPEEEE<br>40<br>Bee eeee4c<br>Been 4a<br>BSS4a<br>BaSSeeD 4eee<br>BaSGeD4<br>39<br>FECCOPEPOCA AVEC YEECCC EEE<br>COE<br>38 FEE EEC EEC £££<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS BSC007N04LS6**
Final Data Sheet
10
**OptiMOS BSC007N04LS6**
Final Data Sheet
11
**OptiMOS BSC007N04LS6**
## BSC007N04LS6
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-07-31|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →