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BSC005N03LS5IATMA1
Power MOSFET, N Channel, 30 V, 433 A, 510 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 188W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 433A
- Drain Source On State Resistance: 510µohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.75 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC005N03LS5I**
## **MOSFET**
## **OptiMOS**
## **Features**
* Monolithically integrated Schottky-like diode ¢ Very low on-resistance _R_ DS(on) @ _V_ GS =4.5V
|**Parameter**<br>1<br>Key ~~Performance~~|**Value**<br>~~Performance~~ ~~Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|30|V|
|_R_DS(on),max|0.55|mΩ|
|_I_D|433|A|
|_Q_oss|81|nC|
|_Q_G(0V..4.5V)|63|nC|
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|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC005N03LS5I<br>~~Type/OrderingCode |~~|TDSON-8 FL<br>~~|~~<br>~~|~~|5N03LS5I|-<br>~~Related Links~~|
Final Data Sheet
1
**OptiMOS[TM�] 5�Power-Transistor,�30�V BSC005N03LS5I**
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.�2.0,��2020-04-16
**OptiMOS[TM�] 5�Power-Transistor,�30�V BSC005N03LS5I**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|433<br>306<br>42|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_A=25°C,<br>_R_THJA=50°C/W2)|
|Pulsed drain current3)|_I_D,pulse|-|-|1731|A|_T_A=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|430|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|188<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|0.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2020-04-16
**OptiMOS[TM�] 5�Power-Transistor,�30�V BSC005N03LS5I**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|30|-|-|V|_V_GS=0V,_I_D=1mA|
|Breakdown voltage temperature<br>coefficient|d_V_(BR)DSS/d_T_j|-|15|-|mV/°C|_I_D=10mA,referencedto25°C|
|Gate threshold voltage|_V_GS(th)|1|1.5|2|V|_V_DS=_V_GS,_I_D=10mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|0.5<br>-|mA|_V_DS=24V,_V_GS=0V,_T_j=25°C<br>_V_DS=24V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.51<br>0.68|0.55<br>0.95|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=50A|
|Gate resistance1)|_R_G|-|0.7|1.2|Ω|-|
|Transconductance|_g_fs|-|290|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|8000|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|3000|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|400|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|20|-|ns|_V_DD=15V,_V_GS=4.5V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|23.7|-|ns|_V_DD=15V,_V_GS=4.5V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|38.8|-|ns|_V_DD=15V,_V_GS=4.5V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|16.3|-|ns|_V_DD=15V,_V_GS=4.5V,_I_D=50A,<br>_R_G,ext=1.6Ω|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2020-04-16
4
**OptiMOS[TM�] 5�Power-Transistor,�30�V BSC005N03LS5I**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|19|-|nC|_V_DD=15V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|11|-|nC|_V_DD=15V,_I_D=50A,_V_GS=0to4.5V|
|Gate to drain charge2)|_Q_gd|-|19|-|nC|_V_DD=15V,_I_D=50A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|27|-|nC|_V_DD=15V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total2)|_Q_g|-|63|-|nC|_V_DD=15V,_I_D=50A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=15V,_I_D=50A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|128|-|nC|_V_DD=15V,_I_D=50A,_V_GS=0to10V|
|Output charge2)|_Q_oss|-|81|-|nC|_V_DS=15V,_V_GS=0V|
|**Table7Reversediode**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|188|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|1731|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.71|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverycharge2)|_Q_rr|-|30|-|nC|_V_R=15V,_I_F=23A,d_i_F/d_t_=400A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2020-04-16
5
**OptiMOS BSC005N03LS5I**
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Final Data Sheet
6
**OptiMOS BSC005N03LS5I**
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Final Data Sheet
7
> **OptiMOS** ™5 **BSC005N03LS5I**
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Final Data Sheet
8
**OptiMOS BSC005N03LS5I**
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10 [2] 10<br>a ea ee ee eee PO T ae<br>a | 6 V15 V PTT IT TTT TTT TT Yet<br>TEECISCCoTPSS a 25 °C LUTCH SS 24 V S eof<br>8<br>ETI SEITE SSCETTS =EEEEEEEHEEEEEEHEH eHee<br>NO ™~ c ih LTT TTT TTT TTT TT TT Tt ya ty<br>il NI PCCP ae<br>10 [1] 100 °C<br>poa a aaMLL | 6 ECECECEEEEESO0000000000000/7ECP40000000008oro<br>a a ee ee ee EA LETT TTT TTT TTT TAAeT,TEE<br>= PT NNT co PTET CELL AATTTT<br>= a /,<br>= ‘ 150 °C LTT TTT TTT TTT AA EEE<br>Aw A<br>4<br>10 [0] AIT<br>UVTIIE ELVIN | EEREgee ree<br>a L)<br>a BO) e ee<br>YT TTT TE TTT 2 LT TAT TTT TTT TT TT TT TT TT TT TT<br>0 SOALEEEEE EEE<br>CTT CHIT | AREERLIAERRTT tttEER tte tt tT EEESee ET TE E ET TT<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 20 40 60 80 100 120 140<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>Diagram Gate charge waveforms<br>10 [-2]<br>SSS SSS 55555555555 55=52—5<br>LttA A Ge|<br>ptt tt tt t e ttt ttet tteerfettt t t T tt| ee Ves<br>EER Q<br>10 [-3] Ver 125 °C | eer || |<br>seeaee aceeeeease<br>Lt | pet tT tT tT tT ttrt= aaeeeee<br>S 100 °C = SeeHeae<br>Slee 10 [-4]<br>OWS 75 °C Ssasnasasasasas=s>=2e<br>[| {[ | | | | | [ | | Pt tT tT ft tT Pt Per tT<br>ptt tt pe eee et tee tl tt<br>HEE HE<br>10 [-5]<br>i ec<br>|EEE[T | Tet | tT Tteer /<br>| [bert Ty | tT tT tT tT pt tt hh<br>25 °C<br>eee Rom | | Q Q cat<br>PTET TET TTT eT Tt yy ey gate<br>10 [-6]<br>CTT) PM [ew<br>0 4 8 12 16 20 24<br>T j [°C]<br>I DSS=f( V DS V GS [parameter:] T j OOCOCSCSCSCSC‘*d<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS BSC005N03LS5I**
Final Data Sheet
10
**OptiMOS BSC005N03LS5I**
Final Data Sheet
11
**OptiMOS** 5 **BSC005N03LS5I**
## BSC005N03LS5I
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-04-16|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
12
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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