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BSB044N08NN3GXUMA1
Power MOSFET, N Channel, 80 V, 90 A, 3700 µohm, WDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage V; Available until stocks are exhausted
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 78W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: WDSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 90A
- Drain Source On State Resistance: 3700µohm
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.974 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSB044N08NN3 G** ## **OptiMOS™3 Power-MOSFET** ## **Product Summary** ## **Features** - Optimized technology for DC/DC converters - Excellent gate charge x _R_ DS(on) product (FOM) |_V_DS|80|V| |---|---|---| |_R_DS(on),max|4.4|mW| |_I_D|90|A| - Superior thermal resistance - Dual sided cooling CanPAK[TM] M MG-WDSON-2 - low parasitic inductance - Low profile (<0.7mm) - N-channel, normal level - 100% avalanche tested - Pb-free plating; RoHS compliant - Qualified according to JEDEC[1)] for target applications - Compatible with DirectFET® package MN footprint and outline[2)] |**Type**||**Package**|**Outline**|**Marking**| |---|---|---|---|---| |BSB044N08NN3|G|MG-WDSON-2|MN|0208| ## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified |**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified||| |---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**| |Continuous drain current|_I_D|_V_GS=10 V,_T_C=25 °C|90|A<br>mJ| |||_V_GS=10 V,_T_C=100 °C|68|| |||_V_GS=10 V,_T_A=25 °C,<br>_R_thJA=58 K/W2)|18|| |Pulsed drain current3)|_I_D,pulse|_T_C=25 °C|360|| |Avalanche energy, single pulse|_E_AS|_I_D=30 A,_R_GS=25W|660|| |Gate source voltage|_V_GS||±20|V| - 1) J-STD20 and JESD22 2) DirectFET® is a trademark of International Rectfier Corporation BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation Rev. 2.0 page 1 2011-07-18 **BSB044N08NN3 G** **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified |**Parameter**||**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---|---| |Power dissipation||_P_tot|_T_C=25 °C||78||W| ||||_T_A=25 °C,<br>_R_thJA=58 K/W2)||2.2||| |Operating and storage temperature||_T_j,_T_stg||-40 ... 150|||°C| |IEC climatic category; DIN IEC 68-1||||55/150/56|||| |**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|||||||| |**Thermal characteristics**|||||||| |Thermal resistance, junction - case<br>_R_thJC<br>bottom<br>-<br>1.0<br>-<br>K/W<br>top<br>-<br>-<br>1.6<br>Device on PCB<br>_R_thJA<br>6 cm2 cooling area2)<br>-<br>-<br>58<br>~~Ee~~|||||||| |**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified||||| ## **Static characteristics** |**Static characteristics**||||||| |---|---|---|---|---|---|---| |Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=1 mA|80|-|-|V| |Gate threshold voltage|_V_GS(th)<br>~~P=~~|_V_DS=_V_GS,_I_D=97 µA<br>~~P=~~|2<br>~~P=~~|2.8<br>~~P=~~|3.5<br>~~P=~~|| |Zero gate voltage drain current|_I_DSS<br>~~P=~~<br>~~pt~~|_V_DS=80 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~P=~~|-<br>~~P=~~|0.1<br>~~P=~~|10<br>~~P=~~|µA| |||_V_DS=80 V,_V_GS=0 V,<br>_T_j=125 °C<br>~~P=~~<br>~~pt~~|-<br>~~P=~~<br>~~pt~~|10<br>~~P=~~<br>~~pt~~|100<br>~~P=~~<br>~~pt~~|| |Gate-source leakage current|_I_GSS<br>~~pt~~|_V_GS=20 V,_V_DS=0 V<br>~~pt~~|-<br>~~pt~~|10<br>~~pt~~|100<br>~~pt~~|nA| |Drain-source on-state resistance|_R_DS(on)|_V_GS=10 V,_I_D=30 A|-|3.7|4.4|| |Gate resistance|_R_G<br>~~(Cre~~|~~(Cre~~|-<br>~~(Cre~~|0.5<br>~~(Cre~~|-<br>~~(Cre~~|W| |Transconductance|_g_fs<br>~~(Cre~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=30 A<br>~~(Cre~~|36<br>~~(Cre~~|72<br>~~(Cre~~|-<br>~~(Cre~~|S| 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.0 page 2 2011-07-18 **BSB044N08NN3 G** |**BSB044N08NN3 G**|**BSB044N08NN3 G**|**BSB044N08NN3 G**|**BSB044N08NN3 G**|**BSB044N08NN3 G**|**BSB044N08NN3 G**|**BSB044N08NN3 G**| |---|---|---|---|---|---|---| |**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~||||||| |**Dynamic characteristics**||||||| |Input capacitance|_C_iss||-|4300|5700|pF| |Output capacitance|_C_oss|_V_GS=0 V,_V_DS=40 V,<br>_f_=1 MHz|-|1100|1450|| |Reverse transfer capacitance|Crss||-|38|-|| |Turn-on delay time|_t_d(on)||-|14|-|ns| |Rise time|_t_r|_V_DD=40 V,_V_GS=10 V,|-|9|-|| |Turn-off delay time|_t_d(off)|_I_D=30 A,_R_G=1.6W|-|26|-|| |Fall time|_t_f||-|7|-|| |Gate Charge Characteristics5)||||||| |Gate to source charge|_Q_gs||-|17|-|nC| |Gate to drain charge|_Q_gd||-|11|-|| |Switching charge|_Q_sw|_V_DD=40 V,_I_D=30 A,<br>_V_GS=0 to 10 V|-|17|-|| |Gate charge total|_Q_g||-|55|73|| |Gate plateau voltage|_V_plateau||-|4.6|-|V| |Output charge|_Q_oss|_V_DD=30 V,_V_GS=0 V|-|75|99|| |**Reverse Diode**||||||| |Diode continuous forward current|_I_S||-|-|30|A| |||_T_C=25 °C||||| |Diode pulse current|_I_S,pulse||-|-|120|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=30 A,<br>_T_j=25 °C|-|0.9|1.2|V| |Reverse recovery time|_t_rr||-|55|-|ns| |||_V_R=40 V,_I_F=_I_S,||||| |||d_i_F/d_t_=400 A/µs||||| |Reverse recovery charge|_Q_rr||-|110|-|nC| - 4) See figure 13 for more detailed information 5) See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2011-07-18 ## Cnfinen **BSB044N08NN3 G** ~~ee~~ ## **1 Power dissipation** _P_ tot=f( _T_ C) ## **2 Drain current** _I_ D=f( _T_ C); _V_ GS≥10 V **==> picture [465 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 90 100<br>80 90 SSS<br>Ue 80 EEE EEE<br>70<br>70<br>60<br>RACES} ENG<br>60<br>50<br>Se<br>50<br>40 ee<br>ee 40<br>re<br>30<br>30<br>20<br>20<br>10<br>10<br>0 Heer eNS 0 EEE<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V DS);); T C=25 °C;=25 °C; D =0 Z thJC=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [3] 10 [[1]]<br>limited by on-state 1 µs<br>resistance<br>10 µs<br>10 [2] 100 µs<br>10 [[0]] 0.5<br>1 ms<br>Ws: 10 ms BEREED 0.2 et<br>10 [1]<br>DC 0.1<br>10 [[-1]] 0.05<br>SF,<br>0.02<br>10 [0]<br>0.01<br>10 [[-2]]<br>single pulse<br>10 [-1]<br>10 [-2] 10 [[-3]]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [[-6]] 10 [[-5]] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]] 10 [[0]]<br>V DS [V] t [s]<br> [W]<br> [A]<br>P tot I D<br> [A] [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS);); _T_ C=25 °C;=25 °C; _D_ =0 parameter: _t_ p **==> picture [225 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [[1]]<br>10 [[0]] 0.5<br>BEREED 0.2 et<br>0.1<br>10 [[-1]] 0.05<br>SF,<br>0.02<br>0.01<br>10 [[-2]]<br>single pulse<br>10 [[-3]]<br>10 [[-6]] 10 [[-5]] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]] 10 [[0]]<br>t p [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> Rev. 2.0 page 4 2011-07-18 **BSB044N08NN3 G** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on resistance** **==> picture [472 x 651] intentionally omitted <==** **----- Start of picture text -----**<br> I D=f( V DS); T j=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>360 12<br>10 V 8 V 4.5 V 5 V 5.5 V 6 V<br>320<br>280<br>240<br>8<br>200 6 V<br>160<br>120 5.5 V 8 V<br>4<br>10 V<br>80<br>5 V<br>40<br>4.5V<br>0<br>Be 0 1 2 3 0<br>V DS [V] 0 40 80 120 I D160 [A] 200 240 280 320<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I D=f( V GS); | V DS|>2| I D| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>90 120<br>75 100<br>60 80<br>45 60<br>30 40<br>150 °C 25 °C<br>15 20<br>0 0<br>0 2 4 6 8 0 15 30 45 60 75 90<br>V GS [V] I D [A]<br>]<br>W<br>[m<br> [A]<br>I D<br>DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> Rev. 2.0 2011-07-18 page 5 **BSB044N08NN3 G** **9 Drain-source on-state resistance** ## **10 Typ. gate threshold voltage** **==> picture [470 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> R DS(on)=f( T j); I D=30 A; V GS=10 V V GS(th)=f( T j); V GS= V DS<br>8 4<br>6 3 970 µA<br>max 97 µA<br>4 typ 2<br>2 1<br>4a i EE<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br>C =f( V DS); V GS=0 V; f =1 MHz I F=f( V SD)<br>parameter: T j<br>10 [4] 100<br>Ciss<br>10 [3]<br>Coss<br>10 Seeeeniie<br>10 [2]<br>150 °C 25 °C<br>150°C 98%<br>Crss<br>25°C 98%<br>Eesseeencat une esnese a<br>10 [1] 1<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>]<br>W<br> [m [V]<br>DS(on) V GS(th)<br>R<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> Rev. 2.0 page 6 2011-07-18 **BSB044N08NN3 G** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 W parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=30 A pulsed parameter: _V_ DD **==> picture [464 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> 100 12<br>40 V<br>10<br>20V 60 V<br>8<br>125 °C 100 °C 25 °C<br>10 6<br>4 _f<br>2<br>N ft/<br>1 0<br>1 10 100 1000 10000 0 10 20 30 40 50 60<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br> BR(DSS)=f(=f( T j);); I D=1 mA=1 mA<br>90<br>V GS<br>85 Q g<br>80<br>75<br>V<br>gs(th)<br>70<br>65<br>Q g(th) Q sw Q gate<br>60 Q gs Q gd<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [A] [V]<br>I AV V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> **15 Drain-source breakdown voltage** _V_ BR(DSS)=f(=f( _T_ j);); _I_ D=1 mA=1 mA Rev. 2.0 2011-07-18 page 7 **BSB044N08NN3 G** ## **Package Outline CanPAK™M MG-WDSON-2** Rev. 2.0 page 8 2011-07-18 **BSB044N08NN3 G** ## **CanPAK™M MG-WDSON-2** **Dimensions in mm** Rev. 2.0 page 9 2011-07-18 **BSB044N08NN3 G** ## **CanPAK™M MG-WDSON-2** **Dimensions in mm Raccomended stencil thikness 150** m **m** Rev. 2.0 page 10 2011-07-18 **BSB044N08NN3 G** ## **Published by** ## **Infineon Technologies AG** **81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2011-07-18
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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