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BSB015N04NX3GXUMA1
Power MOSFET, N Channel, 40 V, 180 A, 0.0013 ohm, WDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Power Dissipation: 89W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 89W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0013ohm
- Transistor Case Style: WDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 180A
- Drain Source On State Resistance: 0.0013ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.896 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## n-Channel Power MOSFET OptiMOS™ BSB015N04NX3 G ## Data Sheet 2.4, 2011-05-24 Final Industrial & Multimarket **OptiMOS™ Power-MOSFET BSB015N04NX3 G** ## **1 Description** OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 40V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications ## **Features** - Optimized for high switching frequency DC/DC converter - 100% avalanche tested - Excellent gate charge x RDS(on) product (FOM) - Qualified according to JEDEC[1)] for target applications - Pb-free plating; RoHS compliant - Very low on-resistance RDS(on) - Low profile (<0.7 mm) - Low parasitic inductance - Double.sided cooling - Compatible with DirectFET® package MX footprint and outline - 100% Rg Tested ## **Applications** - On board power for server - Power managment for high performance computing - Synchronous rectification - High power density point of load converters **Table 1 Key Performance Parameters** **Parameter Value Unit Related Links** ~~a es~~ _V_ DS 40 V IFX OptiMOS webpage ~~es~~ RDS(on),max 1.5 mΩ IFX OptiMOS product brief ~~es~~ _I_ D 180 A IFX OptiMOS spice models QOSS 86 nC IFX Design tools Q ~~|~~ g.typ 107 **Type Package Marking** BSB015N04NX3 G MG-WDSON-2 0204 ~~ee~~ 1) J-STD20 and JESD22 Final Data Sheet 1 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **==> picture [131 x 63] intentionally omitted <==** ## **2 Maximum ratings** at _T_ j = 25 °C, unless otherwise specified. ## **Table 2 Maximum ratings** |**Table 2**<br>**Maximum ratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-|-|180|A|_V_GS=10 V,_T_C=25 °C| |||||124||_V_GS=10 V,_T_C=100 °C| |||||35||_V_GS=10 V,_T_A=25 °C,<br>_R_thJA=45 K/W1))| |Pulsed drain current2)|_I_D,pulse|-|-|400||_T_C=25 °C| |Avalanche current, single pulse3)|_I_AS|-|-|40||| |Avalanche energy, single pulse|_E_AS|-|-|290|mJ|_I_D=40 A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|| |Power dissipation|_P_tot|-|-|89|W|_T_C=25 °C| |||||2.8||_T_A=25 °C,_R_thJA=45 K/W| |Operating and storage temperature|_T_j,_T_stg|-40|-|150|°C|| |IEC climatic category; DIN IEC 68-1||55|150|56|Ncm|| 1) J-STD20 and JESD22 2) See figure 3 for more detailed information - 3) See figure 13 for more detailed information ## **3 Thermal characteristics** ## **Table 3 Thermal characteristics** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case|_R_thJC|-|1.0|-|°K/W|bottom| |||||1.4||top| |Device on PCB|_R_thJA|-|-|45||6 cm2cooling area1)| 1) Device on 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet 2 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **==> picture [131 x 63] intentionally omitted <==** **Electrical characteristics** ## **4 Electrical characteristics** Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. ## **Table 4 Static characteristics** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0 V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|2|-|4||_V_DS=_V_GS,_I_D=250 µA| |Zero gate voltage drain current|_I_DSS|-|0.1|10|µA|_V_DS=40 V,_V_GS=0 V,<br>_T_j=25 °C| |||-|10|100||_V_DS=40 V,_V_GS=0 V,<br>_T_j=125 °C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20 V,_V_DS=0 V| |Drain-source on-state resistance|_R_DS(on)|-|1.3|1.5|mΩ<br>Ω|_V_GS=10V,_I_D=30A| |Gate resistance|_R_G|0.2|0.5|1.0||| |Transconductance|_g_fs|55|110||S||_V_DS|>2|_I_D|RDS(on)max,<br>_I_D=30 A| ## **Table 5 Dynamic characteristics** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance|_C_iss|-|9000|12000|pF|_V_GS=0 V,_V_DS=20 V,<br>_f_=1 MHz| |Output capacitance|_C_oss|-|2300|3100||| |Reverse transfer capacitance|_C_rss|-|91|-||| |Turn-on delay time|_t_d(on)|-|23|-|ns|_V_DD=20V,_V_GS=10 V,<br>_I_D=30 A,_R_G= 1.6Ω| |Rise time|_t_r|-|6.4|-||| |Turn-off delay time|_t_d(off)|-|36|-||| |Fall time|_t_f|-|7.6|-||| Final Data Sheet 3 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **==> picture [131 x 63] intentionally omitted <==** **Electrical characteristics** ## **Table 6 Gate charge characteristics[1)]** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|41|-|nC|_V_DD=20 V,<br>_I_D=30 A,<br>_V_GS=0 to 10V| |Gate charge at threshold|_Q_g(th)|-|26|-||| |Gate to drain charge|_Q_gd|-|13|-||| |Switching charge|_Q_sw|-|28|-||| |Gate charge total|_Q_g|-|107|142||| |Gate plateau voltage|_V_plateau|-|4.8|-|V|| |Gate charge total, sync. FET|_Q_g(sync)|-|101|134||_V_DS=0.1 V,<br>_V_GS=0 to 10 V| |Output charge|_Q_oss|-|86|-||_V_DD=20 V,_V_GS=0 V| 1) See figure 16 for gate charge parameter definition ## **Table 7 Reverse diode characteristics** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_s|||89|A|_T_C=25 °C| |Diode pulse current|_I_S,pulse|||400||| |Diode forward voltage|_V_SD|-|0.81|1.1|V|_V_GS=0 V,_I_F=30 A,<br>_T_j=25 °C| |Reverse recovery charge|_Q_rr|-|-|50|nC|_V_R=15 V,_I_F=_I_s,<br>d_i_F/d_t_=400 A/µs| Final Data Sheet 4 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **5 Electrical characteristics diagrams** ## **Electrical characteristics diagrams** ## **Table 8** **==> picture [98 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 1 Power dissipation<br>**----- End of picture text -----**<br> _P_ tot = f( _T_ C) ## **2 Drain current** _ID=f(TC);_ parameter _:V_ GS ## **Table 9** ## **3 Safe operating area** _**T**_ **C=25 °C=25 °C** **==> picture [425 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 3 Safe operating area T C=25 °C=25 °C 4 Max. transient thermal impedance<br>10° 10'<br>limited by on-state<br>resistance<br>A Noe<br>10° |— NM ~~} 100 ys — 10° -==—> ———<br>05 SHS ai<br>;<br>02 _ gf<br>a 8 i,<br>8 N wa0.02<br>10° A 10? oF Eee<br>10° \\ 10° single pulse<br>10" 10° 10' 10° 10°) =640° «610% =640% = 10%)<br>Vos [V] t, [s]<br>I D=f( V DS); T j=25 °C; D=0; parameter: T p Z (thJC)=f( t p); parameter: D= t p/ T<br>**----- End of picture text -----**<br> Final Data Sheet 2.4, 2011-05-24 5 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **Electrical characteristics diagrams** **Table 10** ## **5 Typ. output characteristics** _**T**_ **C=25 °C** _I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS ## **6 Typ. drain-source on-state resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C; parameter: _V_ GS ## **Table 11** ## **7 Typ. transfer characteristics** _I_ D=f(VGS); | _V_ DS|>2| _I_ D| _R_ DS(on)max ## **8 Typ. forward transconductance** **==> picture [81 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> g fs=f( I D); Tj =25 °C<br>**----- End of picture text -----**<br> Final Data Sheet 6 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** ## **Electrical characteristics diagrams** ## **Table 12** ## **9 Drain-source on-state resistance** RDS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** **==> picture [148 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> V GS(th)=f( T j); V GS= V DS; I D=250 µA<br>**----- End of picture text -----**<br> **Table 13** **==> picture [457 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 11 Typ. capacitances 12 Forward characteristics of reverse diode<br>10° 1000<br>/<br>10° SS H in<br>pa CissCoss 100 L it |<br>Tay =<br>210° P --- =<<br>oO i 25°C, 98%<br>Cres 10 - tt} aaa<br>wo tie| ‘ii |<br>0 5 10 15 20 25 30 0.0 0.5 1.0 1.5<br>Vos [V] Vep IV]<br>C=f( V DS); V GS=0 V; f =1 MHz I F=f( V SD); parameter: T j<br>**----- End of picture text -----**<br> Final Data Sheet 2.4, 2011-05-24 7 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **Electrical characteristics diagrams** **Table 14** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 Ω; parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=30 A pulsed; parameter: _V_ DD ## **Table 15** ## **15 Drain-source breakdown voltage** ## **16 Gate charge waveforms** _V_ BR(DSS)=f( _T_ j); _I_ D=1 mA Final Data Sheet 8 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** **6** ## **Package outlines** ## **Package outlines** **Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches** Final Data Sheet 9 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** ## **Package outlines** ## **7 Package outlines** **Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches** Final Data Sheet 10 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** ## **Package outlines** ## **8 Package outlines** **Figure 3 Outlines MG-WDSON-2, dimensions in mm/ Recommended stencil thickness 150µm** **==> picture [156 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Marking layout<br>**----- End of picture text -----**<br> Final Data Sheet 11 2.4, 2011-05-24 **OptiMOS™ Power-MOSFET BSB015N04NX3 G** ## **Revision History** ## **9 Revision History** ## **Revision History: 2011-05-24, 2.4** ## **Previous Revision:** |**Revision**||**Subjects (major changes since last revision)**| |---|---|---| |0.1||Release of target data sheet| |2.0|Release Final version|| |2.3||DirectFET Disclaimer expired| |2.4||Insert Marking layout| ## **We Listen to Your Comments** Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: **erratum@infineon.com** Edition 2011-05-24 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 12 2.4, 2011-05-24
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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