BS170

## Thank you for your interest in **onsemi** products. Your technical document begins on the following pages. 

**==> picture [390 x 69] intentionally omitted <==**

## **Your Feedback is Important to Us!** 

Please take a moment to participate in our short survey. At **onsemi** , we are dedicated to delivering technical content that best meets your needs. 

## **– Help Us Improve Take the Survey** 

This survey is intended to collect your feedback, capture any issues you may encounter, and to provide improvements you would like to suggest. 

## **We look forward to your feedback.** 

To learn more about **onsemi** , please visit our website at **www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

**DATA SHEET www.onsemi.com** 

## Field Effect Transistor - N-Channel, Enhancement Mode 

## BS170, MMBF170 

## **General Description** 

These N−Channel enhancement mode field effect transistors are produced using **onsemi** ’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 

## **Features** 

- High Density Cell Design for Low RDS(ON) 

- Voltage Controlled Small Signal Switch 

- Rugged and Reliable 

- High Saturation Current Capability 

- These are Pb−Free Devices 

**==> picture [26 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
BS170<br>**----- End of picture text -----**<br>


**==> picture [99 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
DGS<br>TO−92 3 4.825x4.76<br>CASE 135AN<br>D<br>G<br>S<br>**----- End of picture text -----**<br>


**==> picture [128 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−92 3 4.83x4.76 LEADFORMED<br>CASE 135AR<br>**----- End of picture text -----**<br>


**==> picture [52 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
MMBF170<br>D<br>G<br>S<br>SOT−23<br>CASE 318−08<br>**----- End of picture text -----**<br>


**==> picture [93 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain<br>Gate<br>Source<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [125 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
BS170<br>ALYW<br>6ZM<br>1<br>BS170, 6Z = Device Code<br>A = Assembly Plant Code<br>L = Wafer Lot Number<br>YW = Assembly Start Week<br>M = Date Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 6. 

Publication Order Number: **MMBF170/D** 

**1** 

© Semiconductor Components Industries, LLC, 2010 **August, 2024 − Rev. 8** 

**BS170, MMBF170** 

**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLU**|**TE MAXIMUM RATINGS**(TA= 25°C unless otherwise noted)|**TE MAXIMUM RATINGS**(TA= 25°C unless otherwise noted)||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**BS170**|**MMBF170**|**Unit**|
|VDSS|Drain−Source Voltage||60||V|
|VDGR|Drain−Gate Voltage (RGS≤ 1 M�)||60||V|
|VGSS|Gate−Source Voltage||±20||V|
|ID|Drain Current|− Continuous|500|500|mA|
|||− Pulsed|1200|800||
|TJ, TSTG|Operating and Storage Temperature Range||− 55 to 150||°C|
|TL|Maximum Lead Temperature for Soldering Purposes, 1/16” from Case<br>for 10 Seconds||300||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**THERMA**|**L CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**BS170**|**MMBF170**|**Unit**|
|PD|Maximum Power Dissipation<br>Derate above 25°C|830<br>6.6|300<br>2.4|mW<br>mW/°C|
|R�JA|Thermal Resistance, Junction to Ambient|150|417|°C/W|



## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRI**|**CAL CHARACTERISTICS**(TA= 25|°C unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Type**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−Source Breakdown Voltage|VGS= 0 V, ID= 100�A|All|60|−|−|V|
|IDSS|Zero Gate Voltage Drain Current|VDS= 25 V, VGS= 0 V|All|−|−|0.5|�A|
|IGSSF|Gate − Body Leakage, Forward|VGS= 15 V, VDS= 0 V|All|−|−|10|nA|
|**ON CHARACTERISTICS**(Note 1)||||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 1 mA|All|0.8|2.1|3|V|
|RDS(ON)|Static Drain−Source On−Resistance|VGS= 10 V, ID= 200 mA|All|−|1.2|5|�|
|gFS|Forward Transconductance|VDS= 10 V, ID= 200 mA|BS170|−|320|−|mS|
|||VDS≥ 2 VDS(on), ID= 200 mA|MMBF170|−|320|−||
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= 10 V, VGS= 0 V,<br>f = 1.0 MHz|All|−|24|40|pF|
|Coss|Output Capacitance||All|−|17|30|pF|
|Crss|Reverse Transfer Capacitance||All|−|7|10|pF|
|**SWITCHING CHARACTERISTICS**(Note 1)||||||||
|ton|Turn−On Time|VDD= 25 V, ID= 200 mA,<br>VGS= 10 V, RGEN= 25�|BS170|−|−|10|ns|
|||VDD= 25 V, ID= 500 mA,<br>VGS= 10 V, RGEN= 50�|MMBF170|−|−|10||
|toff|Turn−Off Time|VDD= 25 V, ID= 200 mA,<br>VGS= 10 V, RGEN= 25�|BS170|−|−|10|ns|
|||VDD= 25 V, ID= 500 mA,<br>VGS= 10 V, RGEN= 50�|MMBF170|−|−|10||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

**www.onsemi.com** 

**2** 

**BS170, MMBF170** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**Figure 1. On−Region Characteristics** 

**Figure 2. On−Resistance Variation with Gate Voltage and Drain Current** 

**Figure 3. On−Resistance Variation with Temperature** 

**Figure 4. On−Resistance Variation with Drain Current and Temperature** 

**Figure 5. Transfer Characteristics** 

**Figure 6. Gate Threshold Variation with Temperature** 

**www.onsemi.com** 

**3** 

**BS170, MMBF170** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** (continued) 

**Figure 7. Breakdown Voltage Variation with Temperature** 

**Figure 8. Body Diode Forward Voltage Variation with Current and Temperature** 

**Figure 9. Capacitance Characteristics** 

**Figure 10. Gate Charge Characteristics** 

**Figure 11. Switching Test Circuit** 

**Figure 12. Switching Waveforms** 

**www.onsemi.com** 

**4** 

**BS170, MMBF170** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** (continued) 

**Figure 13. BS170 Maximum Safe Operating Area** 

**Figure 14. MMBF170 Maximum Safe Operating Area** 

**Figure 15. TO−92, BS170 Transient Thermal Response Curve** 

**Figure 16. SOT−23, MMBF170 Transient Thermal Response Curve** 

**www.onsemi.com** 

**5** 

**BS170, MMBF170** 

## **ORDERING INFORMATION** 

|**Part Number**|**Package**|**Lead Frame**|**Pin Array**|**Shipping**†|
|---|---|---|---|---|
|BS170|TO−92<br>(Pb−Free)|Straight|D G S|10000 Units / Bulk|
|BS170−D26Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Tape & Reel|
|BS170−D27Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Tape & Reel|
|BS170−D75Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Ammo|
|MMBF170|SOT−23<br>(Pb−Free)|||3000 / Tape & Reel|
|**DISCONTINUED**(Note 2)|||||
|BS170−D74Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Ammo|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

2. **DISCONTINUED:** This device is not recommended for new design. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. 

**www.onsemi.com** 

**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

**==> picture [493 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13880G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−92 3 4.83x4.76 LEADFORMED** 

CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [326 x 39] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

**==> picture [102 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 14 AUG 2024 

## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU 

**==> picture [489 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


**==> picture [493 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

**==> picture [232 x 43] intentionally omitted <==**

