BS170-D75Z.

**DATA SHEET www.onsemi.com** 

## Field Effect Transistor - N-Channel, Enhancement Mode 

## BS170, MMBF170 

## **General Description** 

These N−Channel enhancement mode field effect transistors are produced using **onsemi** ’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 

## **Features** 

- High Density Cell Design for Low RDS(ON) 

- Voltage Controlled Small Signal Switch 

- Rugged and Reliable 

- High Saturation Current Capability 

- These are Pb−Free Devices 

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BS170<br>**----- End of picture text -----**<br>


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DGS<br>TO−92 3 4.825x4.76<br>CASE 135AN<br>D<br>G<br>S<br>**----- End of picture text -----**<br>


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MMBF170<br>D<br>G<br>S<br>SOT−23<br>CASE 318−08<br>**----- End of picture text -----**<br>


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Drain<br>Gate<br>Source<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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BS170<br>ALYW<br>6ZM<br>1<br>BS170, 6Z = Device Code<br>A = Assembly Plant Code<br>L = Wafer Lot Number<br>YW = Assembly Start Week<br>M = Date Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2010 **April, 2022 − Rev. 7** 

**MMBF170/D** 

**BS170, MMBF170** 

**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLU**|**TE MAXIMUM RATINGS**(TA= 25°C unless otherwise noted)|**TE MAXIMUM RATINGS**(TA= 25°C unless otherwise noted)||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**BS170**|**MMBF170**|**Unit**|
|VDSS|Drain−Source Voltage||60||V|
|VDGR|Drain−Gate Voltage (RGS≤ 1 M�)||60||V|
|VGSS|Gate−Source Voltage||±20||V|
|ID|Drain Current|− Continuous|500|500|mA|
|||− Pulsed|1200|800||
|TJ, TSTG|Operating and Storage Temperature Range||− 55 to 150||°C|
|TL|Maximum Lead Temperature for Soldering Purposes, 1/16” from Case<br>for 10 Seconds||300||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**THERMA**|**L CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**BS170**|**MMBF170**|**Unit**|
|PD|Maximum Power Dissipation<br>Derate above 25°C|830<br>6.6|300<br>2.4|mW<br>mW/°C|
|R�JA|Thermal Resistance, Junction to Ambient|150|417|°C/W|



## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRI**|**CAL CHARACTERISTICS**(TA= 25|°C unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Type**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−Source Breakdown Voltage|VGS= 0 V, ID= 100�A|All|60|−|−|V|
|IDSS|Zero Gate Voltage Drain Current|VDS= 25 V, VGS= 0 V|All|−|−|0.5|�A|
|IGSSF|Gate − Body Leakage, Forward|VGS= 15 V, VDS= 0 V|All|−|−|10|nA|
|**ON CHARACTERISTICS**(Note 1)||||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 1 mA|All|0.8|2.1|3|V|
|RDS(ON)|Static Drain−Source On−Resistance|VGS= 10 V, ID= 200 mA|All|−|1.2|5|�|
|gFS|Forward Transconductance|VDS= 10 V, ID= 200 mA|BS170|−|320|−|mS|
|||VDS≥ 2 VDS(on), ID= 200 mA|MMBF170|−|320|−||
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= 10 V, VGS= 0 V,<br>f = 1.0 MHz|All|−|24|40|pF|
|Coss|Output Capacitance||All|−|17|30|pF|
|Crss|Reverse Transfer Capacitance||All|−|7|10|pF|
|**SWITCHING CHARACTERISTICS**(Note 1)||||||||
|ton|Turn−On Time|VDD= 25 V, ID= 200 mA,<br>VGS= 10 V, RGEN= 25�|BS170|−|−|10|ns|
|||VDD= 25 V, ID= 500 mA,<br>VGS= 10 V, RGEN= 50�|MMBF170|−|−|10||
|toff|Turn−Off Time|VDD= 25 V, ID= 200 mA,<br>VGS= 10 V, RGEN= 25�|BS170|−|−|10|ns|
|||VDD= 25 V, ID= 500 mA,<br>VGS= 10 V, RGEN= 50�|MMBF170|−|−|10||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**BS170, MMBF170** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

**Figure 1. On−Region Characteristics** 

**Figure 2. On−Resistance Variation with Gate Voltage and Drain Current** 

**Figure 3. On−Resistance Variation with Temperature** 

**Figure 4. On−Resistance Variation with Drain Current and Temperature** 

**Figure 5. Transfer Characteristics** 

**Figure 6. Gate Threshold Variation with Temperature** 

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**3** 

**BS170, MMBF170** 

**TYPICAL ELECTRICAL CHARACTERISTICS** (continued) 

**Figure 7. Breakdown Voltage Variation with Temperature** 

**Figure 9. Capacitance Characteristics** 

**Figure 11. Switching Test Circuit** 

**Figure 8. Body Diode Forward Voltage Variation with Current and Temperature** 

**Figure 10. Gate Charge Characteristics** 

**Figure 12. Switching Waveforms** 

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**4** 

**BS170, MMBF170** 

**TYPICAL ELECTRICAL CHARACTERISTICS** (continued) 

**Figure 13. BS170 Maximum Safe Operating Area** 

**Figure 14. MMBF170 Maximum Safe Operating Area** 

**Figure 15. TO−92, BS170 Transient Thermal Response Curve** 

**Figure 16. SOT−23, MMBF170 Transient Thermal Response Curve** 

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**5** 

**BS170, MMBF170** 

## **ORDERING INFORMATION** 

|**Part Number**|**Package**|**Lead Frame**|**Pin Array**|**Shipping**†|
|---|---|---|---|---|
|BS170|TO−92<br>(Pb−Free)|Straight|D G S|10000 Units / Bulk|
|BS170−D26Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Tape & Reel|
|BS170−D27Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Tape & Reel|
|BS170−D74Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Ammo|
|BS170−D75Z|TO−92<br>(Pb−Free)|Forming|D G S|2000 / Ammo|
|MMBF170|SOT−23<br>(Pb−Free)|||3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13880G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.83x4.76 LEADFORMED** CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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