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BLT81,115
Bipolar - RF Transistor, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, SOT-223
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- Manufacturer: NXP
- Product type: Bipolar RF Transistors
- No. of Pins: 3Pins
- Power Dissipation: 2W
- RF Transistor Case: SOT-223
- DC Current Gain hFE: 25hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- DC Collector Current: 500mA
- Power Dissipation Pd: 2W
- Transition Frequency: 900MHz
- Transistor Case Style: SOT-223
- DC Current Gain hFE Min: 25hFE
- Operating Temperature Max: 175°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 9.5V
- Collector Emitter Voltage V(br)ceo: 9.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.33 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** **==> picture [481 x 576] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>BLT81<br>UHF power transistor<br>Product specification 1996 May 09<br>Supersedes data of November 1992<br>**----- End of picture text -----**<br> **Philips Semiconductors** ## **UHF power transistor** ## **BLT81** ## **FEATURES** - SMD encapsulation - Gold metallization ensures excellent reliability. ## **APPLICATIONS** - Hand-held radio equipment in the 900 MHz communication band. ## **DESCRIPTION** NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. ## **PINNING - SOT223** |**PIN**|**SYMBOL**|**DESCRIPTION**| |---|---|---| |1<br>2<br>3<br>4|e<br>b<br>e<br>c|emitter<br>base<br>emitter<br>collector| **==> picture [242 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 4<br>c<br>b<br>e<br>1 2 3<br>MAM043 - 1<br>Top view<br>Fig.1 Simplified outline and symbol.<br>**----- End of picture text -----**<br> ## **QUICK REFERENCE DATA** RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). |**MODE OF OPERATION**|**f**<br>**(MHz)**|**VCE**<br>**(V)**|**PL**<br>**(W)**|**Gp**<br>**(dB)**|η**C**<br>**(%)**| |---|---|---|---|---|---| |CW, class-B narrow band|900|7.5|1.2|≥6|≥60| |||6|1.2|typ. 6.5|typ. 77| 1996 May 09 2 Philips Semiconductors ## UHF power transistor ## BLT81 ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter|−|20|V| |VCEO|collector-emitter voltage|open base|−|9.5|V| |VEBO|emitter-base voltage|open collector|−|2.5|V| |IC|collector current (DC)||−|500|mA| |IC(AV)|average collector current||−|500|mA| |Ptot|total power dissipation|Ts= 110°C; note 1|−|2|W| |Tstg|storage temperature||−65|+150|°C| |Tj|operating junction temperature||−|175|°C| ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth j-s|thermal resistance from junction to soldering point|Ptot= 2 W; Ts= 110°C; note 1|32|K/W| ## **Note to the “Limiting values” and “Thermal characteristics”** 1. Ts is the temperature at the soldering point of the collector pin. **==> picture [242 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> MRC094<br>1<br>handbook, halfpage<br>IC<br>(A)<br>10 [−][1]<br>1 10 10 [2]<br>VCE (V)<br>Ts = 110 °C.<br>Fig.2 DC SOAR.<br>**----- End of picture text -----**<br> 1996 May 09 3 Philips Semiconductors ## UHF power transistor ## BLT81 ## **CHARACTERISTICS** Tj = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |V(BR)CBO|collector-base breakdown voltage|open emitter; IC= 1 mA|20|−|−|V| |V(BR)CEO|collector-emitter breakdown voltage|open base; IC= 10 mA|9.5|−|−|V| |V(BR)EBO|emitter-base breakdown voltage|open collector; IE= 0.1 mA|2.5|−|−|V| |ICES|collector leakage current|VCE= 10 V; VBE= 0|−|−|0.1|mA| |hFE|DC current gain|VCE= 5 V; IC= 300 mA; note 1;|25|−|−|| |Cc|collector capacitance|VCB= 7.5 V; IE= ie= 0; f = 1 MHz;|−|2.7|4|pF| |Cre|feedback capacitance|VCE= 7.5 V; IC= 0; f = 1 MHz|−|1.7|3|pF| ## **Note** 1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02. **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MRC090<br>100<br>handbook, halfpage<br>hFE<br>80<br>60<br>40<br>20<br>0<br>0 100 200 300 400<br>IC (mA)<br>VCE = 7.5 V; tp ≤ 200 µs; δ ≤ 0.02; Tj = 25 °C.<br>Fig.3 DC current gain as a function of collector<br>current; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MRC086<br>6<br>handbook, halfpage<br>Cc<br>(pF)<br>4<br>2<br>0<br>0 2 4 6 8 10<br>VCB (V)<br>IE = ie = 0; f = 1 MHz; Tj = 25 °C.<br>Fig.4 Collector capacitance as a function of<br>collector-base voltage; typical values.<br>**----- End of picture text -----**<br> 1996 May 09 4 Philips Semiconductors ## UHF power transistor ## BLT81 ## **APPLICATION INFORMATION** RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7). |**MODE OF OPERATION**|**f**<br>**(MHz)**|**VCE**<br>**(V)**|**PL**<br>**(W)**|**Gp**<br>**(dB)**|η**C**<br>**(%)**| |---|---|---|---|---|---| |CW, class-B narrow band|900|7.5|1.2|≥6<br>typ. 8|≥60<br>typ. 77| |||6|1.2|typ. 6.5|typ. 77| ## **Note** 1. Ts is the temperature at the soldering point of the collector pin. ## **Ruggedness in class-AB operation** The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 9 V; PL = 1.2 W; Ts ≤ 60 °C. **==> picture [242 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> MRC088<br>10 100<br>handbook, halfpage (1)<br>Gp Gp ηC<br>(dB) (2) (%)<br>ηC<br>8 80<br>(4)<br>(3)<br>6 60<br>4 40<br>2 20<br>0 0<br>0 0.4 0.8 1.2 1.6 2.0<br>PL (W)<br>Class-B; f = 900 MHz; Ts ≤ 60 °C.<br>(1) VCE = 7.5 V. (3) VCE = 7.5 V.<br>(2) VCE = 6 V. (4) VCE = 6 V.<br>Fig.5 Power gain and collector efficiency as<br>functions of load power; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> MRC093<br>2.5<br>handbook, halfpage<br>PL<br>(W)<br>2.0<br>(1)<br>1.5<br>(2)<br>1.0<br>0.5<br>0<br>0 100 200 300 400 500<br>PIN (mW)<br>Class-B; f = 900 MHz; Ts ≤ 60 °C.<br>(1) VCE = 7.5 V. (2) VCE = 6 V.<br>Fig.6 Load power as a function of input<br>power; typical values.<br>**----- End of picture text -----**<br> 1996 May 09 5 Philips Semiconductors ## UHF power transistor ## BLT81 ## **Test circuit information** **==> picture [496 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, full pagewidth<br>C2 C4 C6 C8 C10<br>C1 L1 L4 L5 L6 L8 L10 C14<br>50 Ω 50 Ω<br>input output<br>DUT<br>C3 L2 C5 C7 C11 C13<br>L7<br>L9<br>R1 L3<br>VCC<br>R2<br>C9 C12<br>MEA899<br>**----- End of picture text -----**<br> Fig.7 Common emitter test circuit for class-B operation at 900 MHz. 1996 May 09 6 Philips Semiconductors ## UHF power transistor ## BLT81 **List of components used in test circuit** (see Figs 7 and 8) |**COMPONENT**|**DESCRIPTION**|**VALUE**|**DIMENSIONS**|**CATALOGUE No.**| |---|---|---|---|---| |C1, C14|multilayer ceramic chip capacitor; note 1|100 pF||| |C2|multilayer ceramic chip capacitor; note 1|3 pF||| |C3, C5, C11, C13|flm dielectric trimmer|1.4 to 5.5 pF||2222 809 09004| |C4|multilayer ceramic chip capacitor; note 1|5.6 pF||| |C6, C7, C10|multilayer ceramic chip capacitor; note 1|5.1 pF||| |C8|multilayer ceramic chip capacitor; note 1|3.6 pF||| |C9|multilayer ceramic chip capacitor; note 1|220 pF||| |C12|multilayer ceramic chip capacitor;|1 nF||| |L1|stripline; note 2|50Ω|length 26.6 mm<br>width 4.85 mm|| |L2|10 turns enamelled 0.6 mm copper wire|250 nH|int. dia. 4.5 mm<br>leads 2×5 mm|| |L3, L9|grade 3B Ferroxcube wideband<br>HF choke|||4312 020 36640| |L4|stripline; note 2|50Ω|length 18 mm<br>width 4.85 mm|| |L5|stripline; note 2|75Ω|length 3.5 mm<br>width 2.5 mm|| |L6|stripline; note 2|50Ω|length 10 mm<br>width 4.85 mm|| |L7|4 turns enamelled 0.6 mm copper wire|65 nH|int. dia. 4.5 mm<br>leads 2×5 mm|| |L8|stripline; note 2|50Ω|length 15 mm<br>width 4.85 mm|| |L10|stripline; note 2|50Ω|length 24.6 mm<br>width 4.85 mm|| |R1, R2|metal flm resistor|10Ω, 0.25 W||| ## **Notes** 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄16"; thickness of the copper sheet 35 µm. 1996 May 09 7 Philips Semiconductors ## UHF power transistor ## BLT81 **==> picture [497 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>handbook, full pagewidth<br>strap strap<br>80<br>rivets<br>(14x)<br>strap mounting strap<br>screws<br>(8x)<br>**----- End of picture text -----**<br> **==> picture [353 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>L9<br>L3<br>C9 C12<br>R2<br>L2<br>R1<br>C2 C4 C6 L7 C10<br>C1 L1 L4 L5 L6 L8 L10 C14<br>C3 C5 C7 C8 C11 C13<br>MEA898<br>**----- End of picture text -----**<br> ## Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7. 1996 May 09 8 Philips Semiconductors ## UHF power transistor **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MRC091<br>10<br>handbook, halfpage<br>Zi<br>(Ω)<br>8<br>ri<br>6<br>4<br>xi<br>2<br>0<br>800 840 880 920 960 1000<br>f (MHz)<br>**----- End of picture text -----**<br> Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C. Fig.9 Input impedance as a function of frequency (series components); typical values. **==> picture [242 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> MRC089<br>10<br>handbook, halfpage<br>Gp<br>(dB)<br>8<br>6<br>4<br>2<br>0<br>800 840 880 920 960 1000<br>f (MHz)<br>Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C.<br>**----- End of picture text -----**<br> Fig.11 Power gain as a function of frequency; typical values. ## BLT81 **==> picture [242 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> MRC092<br>20<br>handbook, halfpageZL RL<br>(Ω)<br>16<br>12<br>8<br>XL<br>4<br>0<br>800 840 880 920 960 1000<br>f (MHz)<br>**----- End of picture text -----**<br> Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C. Fig.10 Load impedance as a function of frequency (series components); typical values. **==> picture [241 x 59] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage<br>Zi<br>ZL MBA451<br>**----- End of picture text -----**<br> Fig.12 Definition of transistor impedance. 1996 May 09 9 Philips Semiconductors ## UHF power transistor ## BLT81 ## **PACKAGE OUTLINE** **==> picture [495 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, full pagewidth 0.95<br>0.85<br>S seating plane 0.1 S<br>0.32<br>0.24 6.7<br>6.3<br>3.1 B 0.2 M A<br>2.9<br>4<br>A<br>0.10<br>0.01<br>3.7 7.3<br>3.3 6.7<br>16 [o] 16 o<br>max<br>1 2 3<br>10 [o] 0.80<br>1.80 max 2.3 0.60 0.1 M B<br>max (4x) MSA035 - 1<br>4.6<br>**----- End of picture text -----**<br> **==> picture [294 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions in mm.<br>Fig.13 SOT223.<br>**----- End of picture text -----**<br> 1996 May 09 10 Philips Semiconductors ## UHF power transistor BLT81 ## **DEFINITIONS** |**DEFINITIONS**|**DEFINITIONS**| |---|---| ||| |**Data Sheet Status**|| |Objective specifcation|This data sheet contains target or goal specifcations for product development.| |Preliminary specifcation|This data sheet contains preliminary data; supplementary data may be published later.| |Product specifcation|This data sheet contains fnal product specifcations.| |**Limiting values**|| |Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or<br>more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation<br>of the device at these or at any other conditions above those given in the Characteristics sections of the specifcation<br>is not implied. Exposure to limiting values for extended periods may affect device reliability.|| |**Application information**|| |Where application information is given, it is advisory and does not form part of the specifcation.|| ## **Application information** ## **LIFE SUPPORT APPLICATIONS** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 09 11 ## **Philips Semiconductors – a worldwide company** **Argentina:** see South America **Australia:** 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02) 805 4455, Fax. (02) 805 4466 **Austria:** Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. (01) 60 101-1256, Fax. (01) 60 101-1250 **Belarus:** Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. (172) 200 733, Fax. (172) 200 773 **Belgium:** see The Netherlands **Brazil:** see South America **Bulgaria:** Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. (359) 2 689 211, Fax. (359) 2 689 102 **Canada:** PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 **Chile:** see South America **China/Hong Kong:** 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852) 2319 7888, Fax. (852) 2319 7700 **Colombia:** see South America **Czech Republic:** see Austria **Denmark:** Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032) 88 2636, Fax. (031) 57 1949 **Finland:** Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358) 0-615 800, Fax. (358) 0-61580 920 **France:** 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01) 4099 6161, Fax. (01) 4099 6427 **Germany:** P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040) 23 53 60, Fax. (040) 23 53 63 00 **Greece:** No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01) 4894 339/4894 911, Fax. (01) 4814 240 **Hungary:** see Austria **India:** Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, BOMBAY 400 018 Tel. (022) 4938 541, Fax. (022) 4938 722 **Indonesia:** see Singapore **Ireland:** Newstead, Clonskeagh, DUBLIN 14, Tel. (01) 7640 000, Fax. (01) 7640 200 **Israel:** RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. (03) 645 04 44, Fax. (03) 648 10 07 **Italy:** PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. (0039) 2 6752 2531, Fax. (0039) 2 6752 2557 **Japan:** Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. (03) 3740 5130, Fax. (03) 3740 5077 - **Korea:** Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02) 709-1412, Fax. (02) 709-1415 **Malaysia:** No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03) 750 5214, Fax. (03) 757 4880 **Mexico:** 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. 9-5(800) 234-7831, Fax. (708) 296-8556 **Middle East:** see Italy **Netherlands:** Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040) 2783749, Fax. (040) 2788399 **New Zealand:** 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09) 849-4160, Fax. (09) 849-7811 **Norway:** Box 1, Manglerud 0612, OSLO, Tel. (022) 74 8000, Fax. (022) 74 8341 **Philippines:** PHILIPS SEMICONDUCTORS PHILIPPINES Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474 **Poland:** Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. (022) 612 2831, Fax. (022) 612 2327 **Portugal:** see Spain **Romania:** see Italy **Singapore:** Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65) 350 2000, Fax. (65) 251 6500 **Slovakia:** see Austria **Slovenia:** see Italy **South Africa:** S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. (011) 470-5911, Fax. (011) 470-5494 **South America:** Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011) 821-2333, Fax. (011) 829-1849 **Spain:** Balmes 22, 08007 BARCELONA, Tel. (03) 301 6312, Fax. (03) 301 4107 **Sweden:** Kottbygatan 7, Akalla. S-16485 STOCKHOLM, Tel. (0) 8-632 2000, Fax. (0) 8-632 2745 **Switzerland:** Allmendstrasse 140, CH-8027 ZÜRICH, Tel. (01) 488 2211, Fax. (01) 481 77 30 **Taiwan:** PHILIPS TAIWAN Ltd., 23-30F, 66, - Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444 **Thailand:** PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793 **Turkey** : Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. (0212) 279 2770, Fax. (0212) 282 6707 **Ukraine:** PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991 **United Kingdom:** Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181) 730-5000, Fax. (0181) 754-8421 **United States:** 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556 **Uruguay:** see South America **Vietnam:** see Singapore **Yugoslavia:** PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. (381) 11 825 344, Fax. (359) 211 635 777 **Internet:** http://www.semiconductors.philips.com/ps/ **For all other countries apply to:** Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31-40-2724825 SCDS48 © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. ## Printed in The Netherlands 127061/1200/02/pp12 Date of release: 1996 May 09 Document order number: 9397 750 00835 **==> picture [204 x 36] intentionally omitted <==**
Updated at February 9, 2023
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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