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BLF578
RF FET Transistor, 110 V, 88 A, 225 MHz, SOT-539A
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:110V; Continuous Drain Current Id:88A; Power Dissipation Pd:-; Operating Frequency Min:-; Operating Frequency Max:225MHz; RF Transistor Case:SOT-539A; No. of Pins:4P
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: -
- Transistor Mounting: Flange
- Transistor Case Style: SOT-539A
- Operating Frequency Max: 225MHz
- Operating Frequency Min: -
- Drain Source Voltage Vds: 110V
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: 88A
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 217.3 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Product data sheet** ## **BLF578** ## **Power LDMOS transistor** **Rev. 02 — 4 February 2010** ## **1. Product profile** ## **1.1 General description** A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. **Table 1. Application information** |**Mode of operation**|**f**|**VDS**|**PL**|**Gp**|η**D**| |---|---|---|---|---|---| ||**(MHz)**|**(V)**|**(W)**|**(dB)**|**(%)**| |CW|108|50|1000|26|75| |pulsed RF|225|50|1200|24|71| ## **CAUTION** **==> picture [40 x 35] intentionally omitted <==** This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. ## **1.2 Features** - Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 %: - Output power = 1200 W - Power gain = 24 dB - Efficiency = 71 % - Easy power control - Integrated ESD protection - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (10 MHz to 500 MHz) - Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) ## **1.3 Applications** - Industrial, scientific and medical applications - Broadcast transmitter applications **==> picture [81 x 43] intentionally omitted <==** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **2. Pinning information** **Table 2. Pinning** |**Pin**|**Description**||**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Graphic**|**Graphic**|**symbol**|**symbol**| |---|---|---|---|---|---|---|---|---|---|---|---| |1|drain1||||||||||| |2|drain2|||1||2||||1|| ||||||||||||| |3|gate1||||||5||||| |4|gate2|||3||4||3|||5| |5|source|[1]||||||4|||| |||||||||||2|| |||||||||||_sym117_|| [1] Connected to flange. ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BLF578|-<br>flanged balanced LDMOST ceramic package;<br>2 mounting holes; 4 leads<br>SOT539A||| ## **4. Limiting values** **Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |VDS|drain-source voltage||-|110|V| |VGS|gate-source voltage||−0.5|+11|V| |ID|drain current||-|88|A| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||-|225|°C| © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **2 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **5. Thermal characteristics** ## **Table 5. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Typ**|**Unit**| |---|---|---|---|---|---| |Rth(j-c)|thermal resistance from junction to case|Tj= 150°C|[1]<br>[2]|0.14|K/W| |Zth(j-c)|transient thermal impedance from junction to case|Tj= 150°C; tp= 100μs;δ= 20 %|[3]|0.04|K/W| - [1] Tj is the junction temperature. - [2] Rth(j-c) is measured under RF conditions. - [3] See Figure 1. **==> picture [481 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 001aak924<br>0.18<br>Zth(j-c)<br>(K/W) (7)<br>0.12<br>(6)<br>0.06<br>(5) (3)<br>(4) (2)<br>(1)<br>0<br>10 [−][7] 10 [−][6] 10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10<br>tp (s)<br>(1) δ = 1 %<br>**----- End of picture text -----**<br> - (2) δ = 2 % - (3) δ = 5 % - (4) δ = 10 % - (5) δ = 20 % - (6) δ = 50 % - (7) δ = 100 % (DC) **Fig 1. Transient thermal impedance from junction to case as function of pulse duration** ## **6. Characteristics** **Table 6. DC characteristics** _Tj = 25_ ° _C; per section unless otherwise specified._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |V(BR)DSS|drain-source breakdown|VGS= 0 V; ID= 2.5 mA|110|-|-|V| ||voltage|||||| |VGS(th)|gate-source threshold voltage|VDS= 10 V; ID= 500 mA|1.25|1.7|2.25|V| |VGSq|gate-source quiescent voltage|VDS= 50 V; ID= 20 mA|0.8|1.3|1.8|V| |IDSS|drain leakage current|VGS= 0 V; VDS= 50 V|-|-|2.8|μA| © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **3 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** **Table 6. DC characteristics** _…continued_ _Tj = 25_ ° _C; per section unless otherwise specified._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |IDSX|drain cut-off current|VGS= VGS(th)+ 3.75 V;|58|70|-|A| |||VDS= 10 V||||| |IGSS|gate leakage current|VGS= 11 V; VDS= 0 V|-|-|280|nA| |RDS(on)|drain-source on-state|VGS= VGS(th)+ 3.75 V;|-|0.07|-|Ω| ||resistance|ID= 16.66 A||||| |Crs|feedback capacitance|VGS= 0 V; VDS= 50 V;|-|3|-|pF| |||f = 1 MHz||||| |Ciss|input capacitance|VGS= 0 V; VDS= 50 V;|-|403|-|pF| |||f = 1 MHz||||| |Coss|output capacitance|VGS= 0 V; VDS= 50 V;|-|138|-|pF| |||f = 1 MHz||||| **Table 7. RF characteristics** _Mode of operation: pulsed RF; tp = 100_ μ _s;_ δ _= 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25_ ° _C; unless otherwise specified; in a class-AB production test circuit._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Gp|power gain|PL= 1200 W|23|24|25.4|dB| |RLin|input return loss|PL= 1200 W|14|17.5|-|dB| |ηD|drain efficiency|PL= 1200 W|68|71|-|%| **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj113<br>900<br>Coss<br>(pF)<br>750<br>600<br>450<br>300<br>150<br>0<br>0 10 20 30 40 50<br>VDS (V)<br>**----- End of picture text -----**<br> **==> picture [77 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VGS = 0 V; f = 1 MHz.<br>**----- End of picture text -----**<br> **Fig 2. Output capacitance as a function of drain-source voltage; typical values per section** ## **6.1 Ruggedness in class-AB operation** The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 225 MHz. © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **4 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **7. Application information** ## **7.1 Reliability** **==> picture [361 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj114<br>10 [5]<br>Years<br>(1) (2) (3) (4) (5) (6)<br>10 [4]<br>10 [3]<br>10 [2]<br>(7) (8) (9) (10) (11)<br>10<br>1<br>0 4 8 12 16 20<br>Idc (A)<br>**----- End of picture text -----**<br> TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ. - (1) Tj = 100 °C - (2) Tj = 110 °C - (3) Tj = 120 °C - (4) Tj = 130 °C - (5) Tj = 140 °C (6) Tj = 150 °C - (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C **Fig 3. BLF578 electromigration (ID, total device)** © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **5 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **8. Test information** ## **8.1 Impedance information** **Table 8. Typical impedance** _Simulated ZS and ZL test circuit impedances._ |**f**||**ZS**|||**ZL**| |---|---|---|---|---|---| |**MHz**||Ω|||Ω| |225||3.2 + j2.6|||3.7−j0.2| ||||||| |||||drain|| |||||ZL|| |||gate|||| |||ZS||_001aaf059_|| |**Fig**|**4.**|**Definition of transistor impedance**|||| ## **8.2 RF performance** The following figures are measured in a class-AB production test circuit. ## **8.2.1 1-Tone CW pulsed** **==> picture [497 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 001aak926 001aak927<br>26 80 65<br>PL<br>Gp ηD (dBm)<br>(dB) Gp (%) 64 ideal PL<br>24 60<br>63<br>(2)<br>ηD<br>62<br>22 40 (1)<br>61 PL<br>60<br>20 20<br>59<br>18 0 58<br>100 400 700 1000 1300 1600 34 36 38 40<br>PL (W) Ps (dBm)<br>VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs; VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs;<br>δ = 20 %. δ = 20 %.<br>(1) PL(1dB) = 61.0 dBm (1260 W)<br>(2) PL(3dB) = 61.4 dBm (1400 W)<br>Fig 5. Power gain and drain efficiency as function of Fig 6. Load Power as function of source power;<br>load power; typical values typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **6 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** **==> picture [233 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 001aak928<br>26<br>Gp<br>(dB)<br>24<br>(4)<br>(3)<br>(2)<br>(1)<br>22<br>20<br>18<br>100 400 700 1000 1300 1600<br>PL (W)<br>VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.<br>(1) IDq = 0 mA<br>(2) IDq = 40 mA<br>(3) IDq = 80 mA<br>**----- End of picture text -----**<br> - (4) IDq = 160 mA **Fig 7. Power gain as a function of load power; typical values** **==> picture [233 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> 001aak929<br>80<br>ηD<br>(%)<br>60 (1)<br>(2)<br>(3)<br>(4)<br>40<br>20<br>0<br>100 400 700 1000 1300 1600<br>PL (W)<br>VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.<br>(1) IDq = 0 mA<br>**----- End of picture text -----**<br> - (2) IDq = 40 mA (3) IDq = 80 mA - (4) IDq = 160 mA **Fig 8. Drain efficiency as a function of load power; typical values** **==> picture [497 x 317] intentionally omitted <==** **----- Start of picture text -----**<br> 001aak931 001aak933<br>26 80<br>(1) (2) (3) (4) (5)<br>Gp ηD<br>(dB) (%)<br>24 60<br>22 40<br>(4)<br>(5)<br>(3)<br>(2)<br>20 20<br>(1)<br>18 0<br>100 400 700 1000 1300 1600 100 400 700 1000 1300 1600<br>PL (W) PL (W)<br>IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %. IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.<br>(1) VDS = 30 V (1) VDS = 30 V<br>(2) VDS = 35 V (2) VDS = 35 V<br>(3) VDS = 40 V (3) VDS = 40 V<br>(4) VDS = 45 V (4) VDS = 45 V<br>(5) VDS = 50 V (5) VDS = 50 V<br>Fig 9. Power gain as a function of load power; Fig 10. Drain efficiency as a function of load power;<br>typical values typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **7 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **8.3 Test circuit** **==> picture [469 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> VGG VDD<br>C1 C25<br>C11<br>C2 C28<br>R3<br>R1 T2 R5 L1<br>C13<br>input50 Ω C5 L3 C7 C9 L4 L6 L8 L10 C17 C19 C21 L12 C24 output50 Ω<br>C14<br>C10 L5 L7 L9 L11 C16 C18 C20<br>C8 C22<br>C6 C23<br>C15<br>R2 T1 R4 R6 L2<br>C3 C27<br>C12<br>C4 C26<br>VGG VDD<br>001aaj123<br>**----- End of picture text -----**<br> See Table 9 for a list of components. **Fig 11. Class-AB common-source production test circuit** **==> picture [439 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> C25<br>C11<br>C1 T2<br>C2 C28<br>R1 L1<br>C7 R3 C21 R5<br>C13<br>C9 C14 C17 C19<br>C5 C6 C23 C24<br>C10<br>C16 C18 C20<br>C15<br>C8 R4 C22 R6<br>R2 L2<br>C3 C27<br>C4<br>T1<br>C12<br>C26<br>001aaj124<br>See Table 9 for a list of components.<br>**----- End of picture text -----**<br> **Fig 12. Component layout for class-AB production test circuit** © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **8 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** **Table 9. List of components** _For production test circuit, see Figure 11 and Figure 12. Printed-Circuit Board (PCB): Rogers 5880;_ ε _r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35_ μ _m._ |**Component**|**Description**|**Value**||**Remarks**| |---|---|---|---|---| |C1, C2, C11, C12|multilayer ceramic chip capacitor|4.7μF||TDK4532X7R1E475Mt020U| |C2, C3, C27, C28|multilayer ceramic chip capacitor|100 nF||Murata X7R 250 V| |C5, C7, C8, C21, C22|multilayer ceramic chip capacitor|1 nF|[1]|| |C6|multilayer ceramic chip capacitor|30 pF|[1]|| |C9, C10, C13, C15|multilayer ceramic chip capacitor|62 pF|[1]|| |C14|multilayer ceramic chip capacitor|36 pF|[1]|| |C16, C17|multilayer ceramic chip capacitor|24 pF|[1]|| |C18|multilayer ceramic chip capacitor|30 pF|[1]|| |C19|multilayer ceramic chip capacitor|27 pF|[1]|| |C20|multilayer ceramic chip capacitor|9.1 pF|[1]|| |C23|multilayer ceramic chip capacitor|13 pF|[1]|| |C24|multilayer ceramic chip capacitor|16 pF|[1]|| |C25, C26|electrolytic capacitor|220μF; 63 V||| |L1, L2|3 turns 1 mm copper wire|D = 2 mm; length = 3 mm||| |L3, L12|stripline|-||(L×W) 15 mm×2.4 mm| |L4, L5, L10, L11|stripline|-||(L×W) 47 mm×10 mm| |L6, L7, L8, L9|stripline|-||(L×W) 8 mm×15 mm| |R1, R2|metal film resistor|2Ω; 0.6 W||| |R3, R4|metal film resistor|20Ω; 0.6 W||| |R5, R6|metal film resistor|1Ω; 0.6 W||| |T1, T2|semi rigid coax|50Ω; 58 mm||EZ-141-AL-TP-M17| [1] American Technical Ceramics type 100B or capacitor of same quality. © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **9 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **9. Package outline** **Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads** ## **SOT539A** **==> picture [482 x 566] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>F<br>D1<br>U1 B<br>q C<br>H1 w2 M C M c<br>1 2<br>H U2 p E1 E<br>5 w1 M A M B M<br>L<br>3 4<br>A<br>b w3 M Q<br>e<br>0 5 10 mm<br>scale<br>DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)<br>UNIT A b c D D1 e E E1 F H H1 L p Q q U1 U2 w1 w2 w3<br>4.7 11.81 0.18 31.55 31.52 9.50 9.53 1.75 17.12 25.53 3.48 3.30 2.26 41.28 10.29<br>mm 4.2 11.56 0.10 30.94 30.96 13.72 9.30 9.27 1.50 16.10 25.27 2.97 3.05 2.01 35.56 41.02 10.03 0.25 0.51 0.25<br>0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405<br>inches 1.400 0.010 0.020 0.010<br>0.165 0.455 0.004 1.218 1.219 [0.540] 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395<br>Note<br>1. millimeter dimensions are derived from the original inch dimensions.<br>2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br>SOT539A 00-03-03<br>10-02-02<br>**----- End of picture text -----**<br> ## **Fig 13. Package outline SOT539A** © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **10 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **10. Abbreviations** **Table 10. Abbreviations** |**Acronym**|**Description**| |---|---| |CW|Continuous Wave| |EDGE|Enhanced Data rates for GSM Evolution| |GSM|Global System for Mobile communications| |HF|High Frequency| |LDMOS|Laterally Diffused Metal-Oxide Semiconductor| |LDMOST|Laterally Diffused Metal-Oxide Semiconductor Transistor| |RF|Radio Frequency| |TTF|Time To Failure| |VSWR|Voltage Standing-Wave Ratio| ## **11. Revision history** ## **Table 11. Revision history** |**Document ID**|**Release date**|**Data sheet status**<br>**Change notice**|**Data sheet status**<br>**Change notice**|**Supersedes**| |---|---|---|---|---| |BLF578_2|20100204|Product data sheet<br>-||BLF578_1| |Modifications:|**•** Table 1 on page 1<br>:||added information for CW performance.|| ||**•** Section 1 on page||1<br>:changed typical value ofηD.|| ||**•** Table 4 on page 2<br>:||changed maximum value of ID.|| ||**•** Table 5 on page 3<br>:||changed value of Rth(j-c).|| ||**•** Table 5 on page 3<br>:||added information about Zth(j-c).|| ||**•** Figure 1 on page 3<br>:added figure.|||| ||**•** Table 6 on page 3<br>:||added values vor VGSq.|| ||**•** Table 6 on page 3<br>:||changed typical value of IDSX.|| ||**•** Table 7 on page 4<br>:||changed some values.|| ||**•** Section 8.2.1|on page 6<br>:changed some graphs.||| |||||| |BLF578_1|20081211|Objective data sheet<br>-||-| © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **11 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **12. Legal information** ## **12.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **12.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **12.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Non-automotive qualified products —** Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **12 of 14** **BLF578** **NXP Semiconductors** ## **Power LDMOS transistor** product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **13. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2010. All rights reserved. BLF578_2 **Product data sheet** **Rev. 02 — 4 February 2010** **13 of 14** **BLF578** **NXP Semiconductors** **Power LDMOS transistor** ## **14. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 3**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |6.1|Ruggedness in class-AB operation . . . . . . . . . 4| |**7**|**Application information. . . . . . . . . . . . . . . . . . . 5**| |7.1|Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6**| |8.1|Impedance information . . . . . . . . . . . . . . . . . . . 6| |8.2|RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6| |8.2.1|1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 6| |8.3|Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**10**|**Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . 13**| |**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **==> picture [84 x 52] intentionally omitted <==** **© NXP B.V. 2010.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 4 February 2010 Document identifier: BLF578_2**
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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