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BLF571
RF FET Transistor, 110 V, 3.6 A, 430 MHz, 520 MHz, SOT-467C
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:110V; Continuous Drain Current Id:3.6A; Power Dissipation Pd:-; Operating Frequency Min:430MHz; Operating Frequency Max:520MHz; RF Transistor Case:SOT-467C; No. of Pin
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: -
- Transistor Mounting: Flange
- Transistor Case Style: SOT-467C
- Operating Frequency Max: 520MHz
- Operating Frequency Min: 430MHz
- Drain Source Voltage Vds: 110V
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: 3.6A
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 50.64 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **BLF571** ## **HF / VHF power LDMOS transistor** **Rev. 02 — 24 February 2009** ## **Product data sheet** ## **1.** ## **1.1 General description** A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. |**Table 1.**|**Production test performance**|**Production test performance**||||| |---|---|---|---|---|---|---| |**Mode of**|**operation**|**f**|**VDS**|**PL**|**Gp**|η**D**| |||**(MHz)**|**(V)**|**(W)**|**(dB)**|**(%)**| |CW||225|50|20|27.5|70| ## **CAUTION** **==> picture [40 x 35] intentionally omitted <==** This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. ## **1.2 Features** - I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: - N Average output power = 20 W - N Power gain = 27.5 dB - N - I Easy power control - I Integrated ESD protection - I Excellent ruggedness - I - I Excellent thermal stability - I Designed for broadband operation (10 MHz to 500 MHz) - I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) ## **1.3 Applications** - I - I Broadcast transmitter applications **==> picture [211 x 101] intentionally omitted <==** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **2. Pinning information** ## **Table 2. Pinning** **==> picture [397 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Description Simplified outline Graphic symbol<br>1 drain<br>1<br>2 gate 1<br>3 source [1] 3<br>2<br>3<br>2<br>sym112<br>**----- End of picture text -----**<br> [1] ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**<br>|**Version**| |BLF571|-<br>fanged LDMOST ceramic package; 2 mounting holes;<br>2 leads<br>SOT467C||| ## **4. Limiting values** **Table 4. Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |VDS|drain-source voltage||-|110|V| |VGS|gate-source voltage||−0.5|+11|V| |ID|drain current||-|3.6|A| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||-|225|°C| ## **5. Thermal characteristics** |**Table 5.**|**Thermal characteristics**|||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Typ**|**Unit**| |Rth(j-c)|thermal resistance from junction to case|Tcase= 80°C; PL= 20 W|2.9|K/W| © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **2 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **6. Characteristics** ## **Table 6. DC characteristics** Tj = 25 ° |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |V(BR)DSS|drain-source breakdown|VGS= 0 V; ID= 0.25 mA|110|-|-|V| ||voltage|||||| |VGS(th)|gate-source threshold voltage|VDS= 10 V; ID= 25 mA|1.25|1.7|2.25|V| |VGSq|gate-source quiescent voltage|VDS= 50 V; ID= 50 mA|1.25|1.75|2.25|V| |IDSS|drain leakage current|VGS= 0 V; VDS= 50 V|-|-|1.4|µA| |IDSX|drain cut-off current|VGS= VGS(th)+ 3.75 V;|3.0|3.6|-|A| |||VDS= 10 V||||| |IGSS|gate leakage current|VGS= 11 V; VDS= 0 V|-|-|140|nA| |gfs|forward transconductance|VDS= 10 V; ID= 1.25 A|-|1.8|-|S| |RDS(on)|drain-source on-state|VGS= VGS(th)+ 3.75 V;|-|1.34|-|Ω| ||resistance|ID= 833 mA||||| |Crs|feedback capacitance|VGS= 0 V; VDS= 50 V;|-|0.18|-|pF| |||f = 1 MHz||||| |Ciss|input capacitance|VGS= 0 V; VDS= 50 V;|-|22.9|-|pF| |||f = 1 MHz||||| |Coss|output capacitance|VGS= 0 V; VDS= 50 V;|-|9.64|-|pF| |||f = 1 MHz||||| **Table 7. RF characteristics** Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Gp|power gain|PL= 20 W|25.5|27.5|29.5|dB| |RLin|input return loss|PL= 20 W|10|13|-|dB| |ηD|drain effciency|PL= 20 W|67|70|-|%| © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **3 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj172<br>50<br>Coss<br>(pF)<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50<br>VDS (V)<br>**----- End of picture text -----**<br> **==> picture [77 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VGS = 0 V; f = 1 MHz.<br>**----- End of picture text -----**<br> **Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching** ## **6.1 Ruggedness in class-AB operation** The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 20 W; f = 225 MHz. ## **7. Application information** ## **7.1 Impedance information** **Table 8. Typical impedance** Simulated ZS and ZL test circuit impedances. |**f**|**ZS**||**ZL**|| |---|---|---|---|---| |**MHz**|Ω||Ω|| |225|9.7|+ j31.5|31.7|+ j29.3| **==> picture [231 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> drain<br>ZL<br>gate<br>ZS<br>001aaf059<br>Fig 2. Definition of transistor impedance<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **4 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **7.2 Reliability** **==> picture [361 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj173<br>10 [5]<br>Years<br>(1) (2) (3) (4) (5) (6)<br>10 [4]<br>10 [3]<br>10 [2]<br>10<br>(7) (8) (9) (10) (11)<br>1<br>0 0.4 0.8 1.2 1.6<br>IDS(DC) (A)<br>**----- End of picture text -----**<br> TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C **Fig 3. BLF571 electromigration** © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **5 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **8. Test information** ## **8.1 RF performance** ## **8.1.1 1-Tone CW** **==> picture [497 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj174 001aaj175<br>30 80 30<br>Gp ηD Gp<br>(dB) (%) (dB)<br>28 60 28<br>Gp<br>ηD<br>26 40 26 (5)<br>(4)<br>(3)<br>(2)<br>(1)<br>24 20 24<br>22 0 22<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>PL (W) PL (W)<br>VDS = 50 V; IDq = 50 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.<br>(1) IDq = 20 mA<br>(2) IDq = 40 mA<br>(3) IDq = 50 mA<br>(4) IDq = 60 mA<br>(5) IDq = 80 mA<br>Fig 4. Power gain and drain efficiency as function of Fig 5. Power gain as a function of load power; typical<br>load power; typical values values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **6 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj176<br>50<br>PL<br>(dBm)<br>48<br>ideal PL<br>46<br>(2)<br>44 (1) PL<br>42<br>40<br>13 15 17 19 21<br>Pi (dBm)<br>**----- End of picture text -----**<br> **==> picture [136 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> VDS = 50 V; IDq = 50 mA; f = 225 MHz.<br>**----- End of picture text -----**<br> - (1) PL(1dB) = 43.3 dBm (21.4 W) (2) PL(3dB) = 44 dBm (25.1 W) **Fig 6. Load power as function of input power; typical values** ## **8.1.2 2-Tone CW** **==> picture [497 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj177 001aaj178<br>30 80 0<br>Gp ηD<br>(dB) (%) IMD3<br>(dBc)<br>28 60<br>Gp<br>−20<br>26 40<br>ηD<br>−40 (1)<br>(2)<br>24 20 (3)<br>(4)<br>(5)<br>22 0 −60<br>0 10 20 30 0 10 20 30<br>PL(PEP) (W) PL(PEP) (W)<br>VDS = 50 V; IDq = 50 mA; f1 = 224.95 MHz; VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.<br>f2 = 225.05 MHz. (1) IDq = 20 mA<br>(2) IDq = 40 mA<br>(3) IDq = 50 mA<br>(4) IDq = 60 mA<br>(5) IDq = 80 mA<br>Fig 7. Power gain and drain efficiency as function of Fig 8. Third order intermodulation distortion as a<br>peak envelope load power; typical values function of peak envelope load power; typical<br>values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **7 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **8.2 Test circuit** **Table 9. List of components** All capacitors should be soldered vertically. For test circuit, see Figure 9 and Figure 10. |**Component**|**Description**|**Value**||**Remarks**| |---|---|---|---|---| |C1, C3, C4,|multilayer ceramic chip capacitor|100 pF|[1]|| |C5, C14||||| |C2|multilayer ceramic chip capacitor|39 pF|[1]|| |C6|multilayer ceramic chip capacitor|68 pF|[1]|| |C7, C9|multilayer ceramic chip capacitor|1 nF|[1]|| |C8|multilayer ceramic chip capacitor|4.7µF||TDK C4532X7R1E475MT020U or equivalent| |C10|multilayer ceramic chip capacitor|8.2 pF|[1]|| |C11|electrolytic capacitor|220µF||| |C12|multilayer ceramic chip capacitor|33 pF|[1]|| |C13|multilayer ceramic chip capacitor|15 pF|[1]|| |L1|1 turn enamelled copper wire|D = 5.5 mm;||| |||d = 1 mm;||| |||length = 1 mm||| |L2|2 turns enamelled copper wire|D = 3.5 mm;||| |||d = 1 mm;||| |||length = 3 mm||| |L3|5 turns enamelled copper wire|D = 6 mm;||| |||d = 1 mm;||| |||length = 5 mm||| |L4|3.3 turns enamelled copper wire|D = 3 mm;||| |||d = 1 mm;||| |||length = 4 mm||| |L5|3 turns enamelled copper wire|D = 3 mm;||| |||d = 1 mm;||| |||length = 3 mm||| |L6|stripline|-|[2]|(L×W) 16.5 mm×2.4 mm| |L7, L8, L10,|stripline|-|[2]|(L×W) 3.0 mm×5.0 mm| |L11, L17, L19,||||| |L20||||| |L9|stripline|-|[2]|(L×W) 43.0 mm×2.4 mm| |L12, L15|stripline|-|[2]|(L×W) 3.5 mm×2.4 mm| |L13, L14|stripline|-|[2]|(L×W) 8.0 mm×8.0 mm| |L16|stripline|-|[2]|(L×W) 3.0 mm×5.9 mm| |L18|stripline|-|[2]|(L×W) 27.0 mm×2.4 mm| |L21|stripline|-|[2]|(L×W) 28.5 mm×2.4 mm| |R1|metal flm resistor|1000Ω; 0.6 W||| [1] American Technical Ceramics type 100B or capacitor of same quality. [2] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **8 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** **==> picture [497 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> VGG VDD<br>C8 C11<br>C7 C9<br>R1 L3<br>input output<br>50 Ω C1 L6 L7 L1 L8 L9 L10 L2 L11 L16 L4 L17 L18 L19 L5 L20 L21 C14 50 Ω<br>L13 L14<br>L12 L15<br>C2 C3 C4 C5 C6 C10 C12 C13<br>001aaj179<br>Fig 9. Class-AB common-source production test circuit<br>C11<br>C8<br>C7 C9<br>R1<br>L3<br>C1 L1 L2 L4 L5 C14<br>C2 C3 C4 C5 C6 C10 C12 C13<br>3 mm 5.5 mm 9 mm 6.5 mm 5 mm<br>NXP BLF571 225 MHz INPUT PCB REV1 NXP BLF571 225 MHz OUTPUT PCB REV2<br>001aaj180<br>Fig 10. Component layout for class-AB production test circuit<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **9 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **9. Package outline** ## **Flanged LDMOST ceramic package; 2 mounting holes; 2 leads** ## **SOT467C** **==> picture [487 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>F<br>3<br>D1<br>U1 B<br>q C c<br>1<br>E1<br>H U2 E<br>A p w1 M A M B M<br>2<br>b w2 M C M Q<br>0 5 10 mm<br>scale<br>DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)<br>UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2<br>mm 4.67 5.59 0.15 9.25 9.27 5.92 5.97 1.65 18.54 3.43 2.21 14.27 20.45 5.97 0.25 0.51<br>3.94 5.33 0.10 9.04 9.02 5.77 5.72 1.40 17.02 3.18 1.96 20.19 5.72<br>0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73 0.135 0.087 0.805 0.235<br>inch 0.562 0.010 0.020<br>0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67 0.125 0.077 0.795 0.225<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br>99-12-06<br> SOT467C<br>99-12-28<br>Package outline SOT467C<br>© NXP B.V. 2009. All rights reserved.<br>**----- End of picture text -----**<br> **==> picture [147 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Fig 11. Package outline SOT467C<br>BLF571_2<br>**----- End of picture text -----**<br> **Product data sheet** **Rev. 02 — 24 February 2009** **10 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **10. Abbreviations** ## **Table 10. Abbreviations** |**Acronym**|**Description**| |---|---| |CW|Continuous Wave| |EDGE|Enhanced Data rates for GSM Evolution| |GSM|Global System for Mobile communications| |HF|High Frequency| |LDMOS|Laterally Diffused Metal-Oxide Semiconductor| |LDMOST|Laterally Diffused Metal-Oxide Semiconductor Transistor| |RF|Radio Frequency| |TTF|Time To Failure| |VHF|Very High Frequency| |VSWR|Voltage Standing-Wave Ratio| ## **11. Revision history** ## **Table 11. Revision history** |**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |---|---|---|---|---| |BLF571_2|20090224|Product data sheet|-|BLF571_1| |Modifcations:|**•** Data sheet|status updated from Preliminary|to Product|| |BLF571_1|20081211|Preliminary data sheet|-|-| © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **11 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **12. Legal information** ## **12.1 Data sheet status** |**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**| |---|---| |Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.|| |Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.|| |Product [short] data sheet<br>Production<br>This document contains the product specifcation.|| [1] Please consult the most recently issued document before initiating or completing a design. [2] [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **12.2** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **12.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **13. Contact information** For more information, please visit: **http://www.nxp.com** **salesaddresses@nxp.com** © NXP B.V. 2009. All rights reserved. BLF571_2 **Product data sheet** **Rev. 02 — 24 February 2009** **12 of 13** **BLF571** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **14. Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 2**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |6.1|Ruggedness in class-AB operation. . . . . . . . . . 4| |**7**|**Application information. . . . . . . . . . . . . . . . . . . 4**| |7.1|Impedance information . . . . . . . . . . . . . . . . . . . 4| |7.2|Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6**| |8.1|RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6| |8.1.1|1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |8.1.2|2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |8.2|Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**10**|**Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |12.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . 12**| |**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| **==> picture [151 x 121] intentionally omitted <==** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2009.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 24 February 2009 Document identifier: BLF571_2**
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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