BGX50AE6327HTSA1

Bridge Rectifier, Single Phase, 50 V, 140 mA, SOT-143, 4 Pins, 1.3 V

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Manufacturer: INFINEON
Product type: Bridge Rectifier Diodes
No. of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:50V; Forward Current If(AV):140mA; Bridge Rectifier Case Style:SOT-143; Forward Voltage VF Max:1.3V; No. of Pins:4
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 4Pins
No. of Phases: Single Phase
Product Range: BGX50
Forward Voltage Max: 1.3V
Forward Surge Current: -
Average Forward Current: 140mA
Bridge Rectifier Mounting: Surface Mount
Operating Temperature Max: 150°C
Bridge Rectifier Case Style: SOT-143
Repetitive Peak Reverse Voltage: 50V

Delivery and price
Units per pack	1000
Price	0.233 €
Current stock	1000+
Lead time	30 days

Datasheet

Silicon Switching Diode Array 

## BGX 50 A 

@ Bridge configuration @ High-speed switch diode chip 

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Type Marking Ordering Code Pin Contiguration Package?)<br>(tape and reel)<br>BGX 50 A Us Q62702-G38 2 SOT-143<br>3K Yt<br>4<br>—_—__-—_.. EHA00007<br>Maximum Ratings per Diode<br>Total power dissipation, 7s = 74 °C mw<br>Junction temperature ‘Cc<br>Storage temperature range -65...+ 150<br>Thermal Resistance<br>Junction - soldering point<br>**----- End of picture text -----**<br>


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1. For detailed information see chapter Package Outlines. 2} Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. 

Semiconductor Group 

1503 

5.91 

SIEMENS 

BGX 50 A 

## Electrical Characteristics 

at Ts = 25 °C, unless otherwise specified. 

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## DC characteristics 

|Forward voltage per diode|Ve|1.3|V|
|---|---|---|---|
|le= 100 MA||||
|Reverse current per diode|Tr||pA|
|Va =50V||0.2||
|Va=50V,Ta=150°C||100||



## AC characteristics 

Diode capacitance Vea = 0, f= 1 MHz Reverse recovery time Ir= 10 mA, In = 10 mA, Re= 100Q measured at /a=1mA 

|Co|pF|
|---|---|
|tr|ns|



## Test circuit for reverse recovery time 

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Pulse generator: ftp= 100 ns, D = 0.05 Oscillograph: R= 500 f= 0.6 ns, Ri = 50Q tr = 0.35 ns C<1pF 

Semiconductor Group 

1504 

BGX 50 A 

## SIEMENS 

Forward current /r = f (Ta*; Ts) * Package mounted on epoxy 

## Reverse current /n = f (Ta) 

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Forward current /F = f (Ve) (Ve) Ta== 25°C 

Semiconductor Group 

1505 

BGX 50[A] 

SIEMENS 

## Forward voltage Vr = f (Ta) 

. 

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Semiconductor Group 

1506

Updated at June 4, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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