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BFU660F,115
Bipolar - RF Transistor, NPN, 5.5 V, 21 GHz, 225 mW, 60 mA, SOT-343F
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- Manufacturer: NXP
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:21GHz; Power Dissipation Pd:225mW; DC Collector Current:60mA; DC Current Gain hFE:90hFE; RF Tr
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 225mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 21GHz
- Transistor Case Style: SOT-343F
- DC Current Gain hFE Min: 90hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 60mA
- Collector Emitter Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.168 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **BFU660F** ## **NPN wideband silicon RF transistor** **Rev. 1 — 11 January 2011** ## **Product data sheet** ## **1. Product profile** ## **1.1 General description** NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. ## **CAUTION** This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the _ANSI/ESD S20.20_ , _IEC/ST 61340-5_ , _JESD625-A_ or equivalent standards. ## **1.2 Features and benefits** - Low noise high linearity RF transistor - High output third-order intercept point 27 dBm at 1.8 GHz - 40 GHz fT silicon technology ## **1.3 Applications** - Analog/digital cordless applications - X-band high output buffer amplifier - ZigBee - SDARS second stage LNA - LTE, cellular, UMTS **==> picture [172 x 101] intentionally omitted <==** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **1.4 Quick reference data** **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter||-|-|16|V| |VCEO|collector-emitter voltage|open base||-|-|5.5|V| |VEBO|emitter-base voltage|open collector||-|-|2.5|V| |IC|collector current|||-|30|60|mA| |Ptot|total power dissipation|Tsp≤90°C|[1]|-|-|225|mW| |hFE|DC current gain|IC= 10 mA; VCE= 2 V;||90|135|180|| |||Tj= 25°C|||||| |CCBS|collector-base capacitance|VCB= 2 V; f = 1 MHz||-|138|-|fF| |fT|transition frequency|IC= 20 mA; VCE= 1 V;||-|21|-|GHz| |||f = 2 GHz; Tamb= 25°C|||||| |IP3O|output third-order intercept|IC= 40 mA; VCE= 4 V;||-|28|-|dBm| ||point|f = 5.8 GHz; Tamb= 25°C|||||| |Gp(max)|maximum power gain|IC= 30 mA; VCE= 1 V;|[2]|-|24|-|dB| |||f = 1.8 GHz; Tamb= 25°C|||||| |NF|noise figure|IC= 6 mA; VCE= 2 V;||-|0.65|-|dB| |||f = 1.8 GHz;ΓS=Γopt;|||||| |||Tamb= 25°C|||||| |PL(1dB)|output power at 1 dB gain|IC= 60 mA; VCE= 4 V;||-|17|-|dBm| ||compression|ZS= ZL= 50Ω;|||||| |||f = 1.8 GHz; Tamb= 25°C|||||| - [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. ## **2. Pinning information** ## **Table 2. Discrete pinning** |**Pin**|**Description**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Graphic**|**symbol**|**symbol**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |1|emitter|||||||||||| |2|base|||3|||4|||||4| |3|emitter|||||||||2||| |4|collector|||||||||||| |||||||||||||1, 3| |||||2||1|||||_mbb159_|| ## **3. Ordering information** **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BFU660F|-<br>plastic surface-mounted flat pack package; reverse<br>pinning; 4 leads<br>SOT343F||| © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **2 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **4. Marking** **Table 4. Marking** |**Type number**<br>**Marking**|**Description**| |---|---| |BFU660F<br>D3*|* = p : made in Hong Kong| ||* = t : made in Malaysia| - = w : made in China ## **5. Limiting values** **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter||-|16|V| |VCEO|collector-emitter voltage|open base||-|5.5|V| |VEBO|emitter-base voltage|open collector||-|2.5|V| |IC|collector current|||-|60|mA| |Ptot|total power dissipation|Tsp≤90°C|[1]|-|225|mW| |Tstg|storage temperature|||−65|+150|°C| |Tj|junction temperature|||-|150|°C| [1] Tsp is the temperature at the solder point of the emitter lead. ## **6. Thermal characteristics** **Table 6. Thermal characteristics** **==> picture [397 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Conditions Typ Unit<br>Rth(j-sp) thermal resistance from junction to solder point 270 K/W<br>001aam822<br>300<br>Ptot<br>(mW)<br>250<br>200<br>150<br>100<br>50<br>0<br>0 40 80 120 160<br>Tsp (°C)<br>Fig 1. Power derating curve<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **3 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **7. Characteristics** **Table 7. Characteristics** _Tj = 25_ ° _C unless otherwise specified_ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |V(BR)CBO<br>collector-base breakdown voltage|IC= 2.5μA; IE= 0 mA<br>16<br>-<br>-<br>V| |V(BR)CEO<br>collector-emitter breakdown voltage|IC= 1 mA; IB= 0 mA<br>5.5<br>-<br>-<br>V| |IC<br>collector current|-<br>30<br>60<br>mA| |ICBO<br>collector-base cut-off current|IE= 0 mA; VCB= 8 V<br>-<br>-<br>100<br>nA| |hFE<br>DC current gain|IC= 10 mA; VCE= 2 V<br>90<br>135<br>180| |CCES<br>collector-emitter capacitance|VCB= 2 V; f = 1 MHz<br>-<br>297<br>-<br>fF| |CEBS<br>emitter-base capacitance|VEB= 0.5 V; f = 1 MHz<br>-<br>664<br>-<br>fF| |CCBS<br>collector-base capacitance|VCB= 2 V; f = 1 MHz<br>-<br>138<br>-<br>fF| |fT<br>transition frequency|IC= 20 mA; VCE= 1 V; f = 2 GHz;<br>Tamb= 25°C<br>-<br>21<br>-<br>GHz| |Gp(max)<br>maximum power gain|IC= 30 mA; VCE= 1 V; Tamb= 25°C<br>[1]| ||f = 1.5 GHz<br>-<br>25<br>-<br>dB| ||f = 1.8 GHz<br>-<br>24<br>-<br>dB| ||f = 2.4 GHz<br>-<br>22<br>-<br>dB| ||f = 5.8 GHz<br>-<br>12.5<br>-<br>dB| ||s21|2<br>insertion power gain|IC= 30 mA; VCE= 1 V; Tamb= 25°C| ||f = 1.5 GHz<br>-<br>20<br>-<br>dB| ||f = 1.8 GHz<br>-<br>18.5<br>-<br>dB| ||f = 2.4 GHz<br>-<br>16<br>-<br>dB| ||f = 5.8 GHz<br>-<br>8.5<br>-<br>dB| |NF<br>noise figure|IC= 6 mA; VCE= 2 V;ΓS=Γopt;<br>Tamb= 25°C| ||f = 1.5 GHz<br>-<br>0.60<br>-<br>dB| ||f = 1.8 GHz<br>-<br>0.65<br>-<br>dB| ||f = 2.4 GHz<br>-<br>0.70<br>-<br>dB| ||f = 5.8 GHz<br>-<br>1.20<br>-<br>dB| |Gass<br>associated gain|IC= 6 mA; VCE= 2 V;ΓS=Γopt;<br>Tamb= 25°C| ||f = 1.5 GHz<br>-<br>21<br>-<br>dB| ||f = 1.8 GHz<br>-<br>20<br>-<br>dB| ||f = 2.4 GHz<br>-<br>17.5<br>-<br>dB| ||f = 5.8 GHz<br>-<br>12<br>-<br>dB| |PL(1dB)<br>output power at 1 dB gain compression|IC= 60 mA; VCE= 4 V;<br>ZS= ZL= 50Ω; Tamb= 25°C| ||f = 1.5 GHz<br>-<br>17<br>-<br>dBm| ||f = 1.8 GHz<br>-<br>17<br>-<br>dBm| ||f = 2.4 GHz<br>-<br>16<br>-<br>dBm| ||f = 5.8 GHz<br>-<br>18.5<br>-<br>dBm| All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **4 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** **Table 7. Characteristics** _…continued Tj = 25_ ° _C unless otherwise specified_ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |IP3O<br>output third-order intercept point|IC= 40 mA; VCE= 4 V;<br>ZS= ZL= 50Ω; Tamb= 25°C| ||f = 1.5 GHz<br>-<br>27<br>-<br>dBm| ||f = 1.8 GHz<br>-<br>27<br>-<br>dBm| ||f = 2.4 GHz<br>-<br>27<br>-<br>dBm| ||f = 5.8 GHz<br>-<br>28<br>-<br>dBm| - [1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. **==> picture [497 x 356] intentionally omitted <==** **----- Start of picture text -----**<br> 001aam823 001aam824<br>60 200<br>hFE<br>IC (1)<br>(mA)<br>(2) 150<br>40 (3)<br>(4)<br>(5) 100<br>(6)<br>20<br>(7) 50<br>(8)<br>0 0<br>0 1 2 3 4 5 0 20 40 60<br>VCE (V) IC (mA)<br>Tamb = 25 °C. VCE = 2 V; Tamb = 25 °C.<br>(1) IB = 400 μA<br>(2) IB = 350 μA<br>(3) IB = 300 μA<br>(4) IB = 250 μA<br>(5) IB = 200 μA<br>(6) IB = 150 μA<br>(7) IB = 100 μA<br>(8) IB = 50 μA<br>Fig 2. Collector current as a function of Fig 3. DC current gain as a function of collector<br>collector-emitter voltage; typical values current; typical values<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. **Rev. 1 — 11 January 2011 5 of 12** BFU660F **Product data sheet** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** **==> picture [497 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 001aam825 001aam826<br>200 25<br>CCBS fT<br>(fF) (GHz)<br>160 20<br>120 15<br>80 10<br>40 5<br>0 0<br>0 4 8 12 0 20 40 60 80 100<br>VCB (V) IC (mA)<br>f = 1 MHz, Tamb = 25 °C. VCE = 1 V; f = 2 GHz; Tamb = 25 °C.<br>Fig 4. Collector-base capacitance as a function of Fig 5. Transition frequency as a function of collector<br>collector-base voltage; typical values current; typical values<br>**----- End of picture text -----**<br> **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aam827<br>30<br>G MSG<br>(dB)<br>(1) Gp(max)<br>20<br>(2)<br>(3)<br>(4)<br>10<br>0<br>0 20 40 60 80 100<br>IC (mA)<br>**----- End of picture text -----**<br> VCE = 1 V; Tamb = 25 °C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz **Fig 6. Gain as a function of collector current; typical value** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **6 of 12** **BFU660F** **NXP Semiconductors** ## **NPN wideband silicon RF transistor** **==> picture [497 x 544] intentionally omitted <==** **----- Start of picture text -----**<br> 001aam828 001aam829<br>40 40<br>G G<br>(dB) (dB)<br>30 30<br>MSG<br>MSG<br>20 20<br>|S21| [2] Gp(max)<br>Gp(max)<br>|S21| [2]<br>10 10<br>0 0<br>0 2 4 6 8 10 0 2 4 6 8 10<br>f (GHz) f (GHz)<br>VCE = 1 V; IC = 5 mA; Tamb = 25 °C. VCE = 1 V; IC = 30 mA; Tamb = 25 °C.<br>Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values<br>001aam830 001aam831<br>3 2.0<br>NFmin<br>NFmin (dB)<br>(dB)<br>1.5<br>2<br>1.0<br>(1)<br>1<br>(2) 0.5<br>(3)<br>(4)<br>0 0<br>0 5 10 15 20 25 0 2 4 6 8<br>IC (mA) f (GHz)<br>VCE = 2 V; Tamb = 25 °C. VCE = 2 V; IC = 6 mA; Tamb = 25 °C.<br>(1) f = 5.8 GHz<br>(2) f = 2.4 GHz<br>(3) f = 1.8 GHz<br>(4) f = 1.5 GHz<br>Fig 9. Minimum noise figure as a function of Fig 10. Minimum noise figure as a function of<br>collector current; typical values frequency; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 1 — 11 January 2011** BFU660F **Product data sheet** **7 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **8. Package outline** ## **Plastic surface-mounted flat pack package; reverse pinning; 4 leads** ## **SOT343F** **==> picture [481 x 564] intentionally omitted <==** **----- Start of picture text -----**<br> D A E<br>X<br>y HE<br>e<br>3 4<br>A<br>c<br>2 1 Lp<br>w M A bp b1 w M A detail X<br>e1<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A<br>UNIT max bp b1 c D E e e1 HE Lp w y<br>0.75 0.4 0.7 0.25 2.2 1.35 2.2 0.48<br>mm 1.3 1.15 0.2 0.1<br>0.65 0.3 0.5 0.10 1.8 1.15 2.0 0.38<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>05-07-12<br>SOT343F<br>06-03-16<br>**----- End of picture text -----**<br> ## **Fig 11. Package outline SOT343F** All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **8 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **9. Abbreviations** |**Table 8.**|**Abbreviations**| |---|---| |**Acronym**|**Description**| |DC|Direct Current| |LNA|Low Noise Amplifier| |LTE|Long Term Evolution| |NPN|Negative-Positive-Negative| |RF|Radio Frequency| |SDARS|Satellite Digital Audio Radio Service| |UMTS|Universal Mobile Telecommunications System| ## **10. Revision history** |**Table 9.**<br>**Revision**|**history**|||| |---|---|---|---|---| |**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |BFU660F v.1|20110111|Product data sheet|-|-| © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **9 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **11. Legal information** ## **11.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **11.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **11.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BFU660F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. **Product data sheet 10 of 12** **Rev. 1 — 11 January 2011** **BFU660F** ## **NXP Semiconductors** ## **NPN wideband silicon RF transistor** **Non-automotive qualified products —** Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **11.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **12. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU660F **Product data sheet** **Rev. 1 — 11 January 2011** **11 of 12** **BFU660F** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **13. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 2| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 3**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4**| |**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**9**|**Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**10**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**11**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 10**| |11.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10| |11.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |11.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |11.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**12**|**Contact information. . . . . . . . . . . . . . . . . . . . . 11**| |**13**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2011.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 11 January 2011 Document identifier: BFU660F**
Updated at April 28, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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