BFU660F,115

Bipolar - RF Transistor, NPN, 5.5 V, 21 GHz, 225 mW, 60 mA, SOT-343F

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Manufacturer: NXP
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:5.5V; Transition Frequency ft:21GHz; Power Dissipation Pd:225mW; DC Collector Current:60mA; DC Current Gain hFE:90hFE; RF Tr
MSL: MSL 1 - Unlimited
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 4Pins
Product Range: -
Qualification: -
Power Dissipation: 225mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 21GHz
Transistor Case Style: SOT-343F
DC Current Gain hFE Min: 90hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 60mA
Collector Emitter Voltage Max: 5.5V

Delivery and price
Units per pack	3000
Price	0.168 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 18, 2026