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BFU530AR
Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 40 mA, SOT-23
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- Manufacturer: NXP
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:11GHz; Power Dissipation Pd:450mW; DC Collector Current:40mA; DC Current Gain hFE:60hFE;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 450mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 11GHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 60hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40mA
- Collector Emitter Voltage Max: 12V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.196 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [48 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> �����<br>**----- End of picture text -----**<br> ## **BFU530A** ## **NPN wideband silicon RF transistor** **Rev. 1 — 13 January 2014** ## **Product data sheet** ## **1. Product profile** ## **1.1 General description** NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. ## **1.2 Features and benefits** - Low noise, high breakdown RF transistor - AEC-Q101 qualified - Minimum noise figure (NFmin) = 0.6 dB at 900 MHz - Maximum stable gain 18 dB at 900 MHz - 11 GHz fT silicon technology ## **1.3 Applications** - Applications requiring high supply voltages and high breakdown voltages - Broadband amplifiers up to 2 GHz - Low noise amplifiers for ISM applications - ISM band oscillators ## **1.4 Quick reference data** **Table 1. Quick reference data** _Tamb = 25_ _C unless otherwise specified_ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |VCB<br>collector-base voltage|open emitter<br>-<br>-<br>24<br>V| |VCE<br>collector-emitter voltage|open base<br>-<br>-<br>12<br>V| ||shorted base<br>-<br>-<br>24<br>V| |VEB<br>emitter-base voltage|open collector<br>-<br>-<br>2<br>V| |IC<br>collector current|-<br>10<br>40<br>mA| |Ptot<br>total power dissipation|Tsp87C<br>[1]<br>-<br>-<br>450<br>mW| |hFE<br>DC current gain|IC= 10 mA; VCE= 8 V<br>60<br>95<br>200| |Cc<br>collector capacitance|VCB= 8 V; f = 1 MHz<br>-<br>0.67<br>-<br>pF| |fT<br>transition frequency|IC= 15 mA; VCE= 8 V; f = 900 MHz<br>-<br>11<br>-<br>GHz| **==> picture [172 x 101] intentionally omitted <==** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** **Table 1. Quick reference data** _…continued_ _Tamb = 25_ _C unless otherwise specified_ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Gp(max)|maximum power gain|IC= 10 mA; VCE= 8 V; f = 900 MHz|[2]|-|18|-|dB| |NFmin|minimum noise figure|IC= 1 mA; VCE= 8 V; f = 900 MHz;S=opt||-|0.6|-|dB| |PL(1dB)|output power at 1 dB gain|IC= 15 mA; VCE= 8 V; ZS= ZL= 50;||-|10|-|dBm| ||compression|f = 900 MHz|||||| - [1] Tsp is the temperature at the solder point of the collector lead. - [2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG. ## **2. Pinning information** **Table 2. Discrete pinning** |**Pin**|**Description**|**Simplified**|**outline**|**Graphic symbol**|**Graphic symbol**| |---|---|---|---|---|---| |1|base||||| |2|emitter||�||�| |3|collector|||�|| |||�|�||�| |||||_�������_|_���_| ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BFU530A|-<br>plastic surface-mounted package; 3 leads<br>SOT23||| |OM7961|-<br>Customer evaluation kit for BFU520A, BFU530A and BFU550A[1]<br>-||| - [1] The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) - b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520A, BFU530A and BFU550A samples - e) USB stick with data sheets, application notes, models, S-parameter and noise files ## **4. Marking** ## **Table 4. Marking** |**Type number**<br>**Marking**|**Description**| |---|---| |BFU530A<br>HY*|* = t : made in Malaysia| ||* = w : made in China| © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **2 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **5. Design support** |**Table 5.**<br>**Available design support**<br>_Download from the BFU530A product information page on_|_http://www.nxp.com_<br>_._| |---|---| |**Support item**<br>**Available**|**Remarks**| |Device models for Agilent EEsof EDA ADS<br>yes|Based on Mextram device model.| |SPICE model<br>yes|Based on Gummel-Poon device<br>model.| |S-parameters<br>yes|| |Noise parameters<br>yes|| |Customer evaluation kit<br>yes|SeeSection 3<br> andSection 10<br>.| |Solder pattern<br>yes|| |Application notes<br>yes|SeeSection 10.1<br>and Section 10.2<br>.| ## **6. Limiting values** **Table 6. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VCB<br>collector-base voltage|open emitter<br>-<br>30<br>V| |VCE<br>collector-emitter voltage|open base<br>-<br>16<br>V| ||shorted base<br>-<br>30<br>V| |VEB<br>emitter-base voltage|open collector<br>-<br>3<br>V| |IC<br>collector current|-<br>65<br>mA| |Tstg<br>storage temperature|65<br>+150<br>C| |VESD<br>electrostatic discharge voltage|Human Body Model (HBM) According to JEDEC<br>standard 22-A114E<br>-<br>150<br>V| ||Charged Device Model (CDM) According to<br>JEDEC standard 22-C101B<br>-<br>2<br>kV| ## **7. Recommended operating conditions** ## **Table 7. Characteristics** |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |VCB<br>collector-base voltage|open emitter<br>-<br>-<br>24<br>V| |VCE<br>collector-emitter voltage|open base<br>-<br>-<br>12<br>V| ||shorted base<br>-<br>-<br>24<br>V| |VEB<br>emitter-base voltage|open collector<br>-<br>-<br>2<br>V| |IC<br>collector current|-<br>-<br>40<br>mA| |Pi<br>input power|ZS= 50<br>-<br>-<br>10<br>dBm| |Tj<br>junction temperature|40<br>-<br>+150<br>C| |Ptot<br>total power dissipation|Tsp87C<br>[1]<br>-<br>-<br>450<br>mW| [1] Tsp is the temperature at the solder point of the collector lead. © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **3 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **8. Thermal characteristics** |**Table 8.**|**Thermal characteristics**||||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Typ**|**Unit**| |Rth(j-sp)|thermal resistance from junction to solder point||[1]|140|K/W| - [1] Tsp is the temperature at the solder point of the collector lead. Tsp has the following relation to the ambient temperature Tamb: Tsp = Tamb + P Rth(sp-a) With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and ambient. Rth(sp-a) is determined by the heat transfer properties in the application. The heat transfer properties are set by the application board materials, the board layout and the environment e.g. housing. **Fig 1. Power derating curve** ## **9. Characteristics** **Table 9. Characteristics** _Tamb = 25_ _C unless otherwise specified_ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |V(BR)CBO|collector-base breakdown voltage|IC= 100 nA; IE= 0 mA|24|-|-|V| |V(BR)CEO|collector-emitter breakdown voltage|IC= 150 nA; IB= 0 mA|12|-|-|V| |IC|collector current||-|10|40|mA| |ICBO|collector-base cut-off current|IE= 0 mA; VCB= 8 V|-|<1|-|nA| |hFE|DC current gain|IC= 10 mA; VCE= 8 V|60|95|200|| |Ce|emitter capacitance|VEB= 0.5 V; f = 1 MHz|-|0.83|-|pF| |Cre|feedback capacitance|VCE= 8 V; f = 1 MHz|-|0.43|-|pF| |Cc|collector capacitance|VCB= 8 V; f = 1 MHz|-|0.67|-|pF| |fT|transition frequency|IC= 15 mA; VCE= 8 V; f = 900 MHz|-|11|-|GHz| All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **4 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** **Table 9. Characteristics** _…continued Tamb = 25_ _C unless otherwise specified_ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |Gp(max)<br>maximum power gain|f = 433 MHz; VCE= 8 V<br>[1]| ||IC= 1 mA<br>-<br>15.5<br>-<br>dB| ||IC= 10 mA<br>-<br>23<br>-<br>dB| ||IC= 15 mA<br>-<br>23.5<br>-<br>dB| ||f = 900 MHz; VCE= 8 V<br>[1]| ||IC= 1 mA<br>-<br>12.5<br>-<br>dB| ||IC= 10 mA<br>-<br>18<br>-<br>dB| ||IC= 15 mA<br>-<br>18<br>-<br>dB| ||f = 1800 MHz; VCE= 8 V<br>[1]| ||IC= 1 mA<br>-<br>10.5<br>-<br>dB| ||IC= 10 mA<br>-<br>12<br>-<br>dB| ||IC= 15 mA<br>-<br>12<br>-<br>dB| |s212<br>insertion power gain|f = 433 MHz; VCE= 8 V| ||IC= 1 mA<br>-<br>10<br>-<br>dB| ||IC= 10 mA<br>-<br>21<br>-<br>dB| ||IC= 15 mA<br>-<br>21<br>-<br>dB| ||f = 900 MHz; VCE= 8 V| ||IC= 1 mA<br>-<br>8.5<br>-<br>dB| ||IC= 10 mA<br>-<br>15<br>-<br>dB| ||IC= 15 mA<br>-<br>15.5<br>-<br>dB| ||f = 1800 MHz; VCE= 8 V| ||IC= 1 mA<br>-<br>5<br>-<br>dB| ||IC= 10 mA<br>-<br>10<br>-<br>dB| ||IC= 15 mA<br>-<br>10<br>-<br>dB| |NFmin<br>minimum noise figure|f = 433 MHz; VCE= 8 V;S=opt| ||IC= 1 mA<br>-<br>0.5<br>-<br>dB| ||IC= 10 mA<br>-<br>0.8<br>-<br>dB| ||IC= 15 mA<br>-<br>0.9<br>-<br>dB| ||f = 900 MHz; VCE= 8 V;S=opt| ||IC= 1 mA<br>-<br>0.6<br>-<br>dB| ||IC= 10 mA<br>-<br>0.9<br>-<br>dB| ||IC= 15 mA<br>-<br>1.0<br>-<br>dB| ||f = 1800 MHz; VCE= 8 V;S=opt| ||IC= 1 mA<br>-<br>0.7<br>-<br>dB| ||IC= 10 mA<br>-<br>1.0<br>-<br>dB| ||IC= 15 mA<br>-<br>1.1<br>-<br>dB| © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **5 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** **Table 9. Characteristics** _…continued Tamb = 25_ _C unless otherwise specified_ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |Gass<br>associated gain|f = 433 MHz; VCE= 8 V;S=opt| ||IC= 1 mA<br>-<br>22<br>-<br>dB| ||IC= 10 mA<br>-<br>22<br>-<br>dB| ||IC= 15 mA<br>-<br>22<br>-<br>dB| ||f = 900 MHz; VCE= 8 V;S=opt| ||IC= 1 mA<br>-<br>14.5<br>-<br>dB| ||IC= 10 mA<br>-<br>16<br>-<br>dB| ||IC= 15 mA<br>-<br>16<br>-<br>dB| ||f = 1800 MHz; VCE= 8 V;S=opt| ||IC= 1 mA<br>-<br>8<br>-<br>dB| ||IC= 10 mA<br>-<br>10.5<br>-<br>dB| ||IC= 15 mA<br>-<br>10.5<br>-<br>dB| |PL(1dB)<br>output power at 1 dB gain compression|f = 433 MHz; VCE= 8 V; ZS= ZL= 50| ||IC= 10 mA<br>-<br>6<br>-<br>dBm| ||IC= 15 mA<br>-<br>9.5<br>-<br>dBm| ||f = 900 MHz; VCE= 8 V; ZS= ZL= 50| ||IC= 10 mA<br>-<br>7<br>-<br>dBm| ||IC= 15 mA<br>-<br>10<br>-<br>dBm| ||f = 1800 MHz; VCE= 8 V; ZS= ZL= 50| ||IC= 10 mA<br>-<br>8<br>-<br>dBm| ||IC= 15 mA<br>-<br>10.5<br>-<br>dBm| |IP3o<br>output third-order intercept point|f1= 433 MHz; f2= 434 MHz; VCE= 8 V;<br>ZS= ZL= 50| ||IC= 10 mA<br>-<br>16<br>-<br>dBm| ||IC= 15 mA<br>-<br>19<br>-<br>dBm| ||f1= 900 MHz; f2= 901 MHz; VCE= 8 V;<br>ZS= ZL= 50| ||IC= 10 mA<br>-<br>17<br>-<br>dBm| ||IC= 15 mA<br>-<br>20<br>-<br>dBm| ||f1= 1800 MHz; f2= 1801 MHz;<br>VCE= 8 V; ZS= ZL= 50| ||IC= 10 mA<br>-<br>18<br>-<br>dBm| ||IC= 15 mA<br>-<br>20<br>-<br>dBm| [1] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG. © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 1 — 13 January 2014** BFU530A **Product data sheet** **6 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **9.1 Graphs** Tamb = 25 C. - (1) IB = 25 A - (2) IB = 75 A - (3) IB = 125 A - (4) IB = 175 A - (5) IB = 225 A - (6) IB = 275 A - (7) IB = 325 A **Fig 2. Collector current as a function of collector-emitter voltage; typical values** - Tamb = 25 C. - (1) VCE = 3.0 V (2) VCE = 8.0 V VCE = 8 V. (1) Tamb = 40 C (2) Tamb = +25 C (3) Tamb = +125 C **Fig 4. DC current gain as function of collector current; typical values** **Fig 3. DC current gain as function of collector current; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **7 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** Tamb = 25 C. Tamb = 25 C. - (1) VCE = 3.0 V - (2) VCE = 8.0 V - (1) VCE = 3.0 V - (2) VCE = 8.0 V - **Fig 5. Collector current as a function of base-emitter Fig 6. Base current as a function of base-emitter voltage; typical values voltage; typical values** - VCE = 3 V. - (1) Tamb = 40 C (2) Tamb = +25 C (3) Tamb = +125 C - **Fig 7. Reverse base current as a function of emitter-base voltage; typical values** IC = 0 mA; f = 1 MHz; Tamb = 25 C. **Fig 8. Collector capacitance as a function of collector-base voltage; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **8 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** Tamb = 25 C. (1) VCE = 3.3 V - (2) VCE = 5.0 V (3) VCE = 8.0 V - (4) VCE = 12.0 V - **Fig 9. Transition frequency as a function of collector current; typical values** IC = 10 mA; VCE = 8 V; Tamb = 25 C. IC = 15 mA; VCE = 8 V; Tamb = 25 C. **Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **9 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** VCE = 8 V; Tamb = 25 C. VCE = 8 V; Tamb = 25 C. (1) f = 300 MHz If K >1 then Gp(max) = maximum power gain. If K < 1 then (2) f = 433 MHz Gp(max) = MSG. (3) f = 800 MHz (1) f = 300 MHz (4) f = 900 MHz (2) f = 433 MHz (5) f = 1800 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz **Fig 12. Insertion power gain as a function of collector Fig 13. Maximum power gain as a function of collector current; typical values current; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 1 — 13 January 2014** BFU530A **Product data sheet** **10 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** IC = 15 mA; Tamb = 25 C. IC = 15 mA; Tamb = 25 C. (1) f = 300 MHz If K >1 then Gp(max) = maximum power gain. If K < 1 then (2) f = 433 MHz Gp(max) = MSG. (3) f = 800 MHz (1) f = 300 MHz (4) f = 900 MHz (2) f = 433 MHz (5) f = 1800 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz **Fig 14. Insertion power gain as a function of Fig 15. Maximum power gain as a function of collector-emitter voltage; typical values collector-emitter voltage; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **11 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** VCE = 8 V; 40 MHz f 3 GHz. - (1) IC = 10 mA - (2) IC = 15 mA **Fig 16. Input reflection coefficient (s11); typical values** VCE = 8 V; 40 MHz f 3 GHz. - (1) IC = 10 mA - (2) IC = 15 mA - **Fig 17. Output reflection coefficient (s22); typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **12 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## VCE = 8 V; Tamb = 25 C. - (1) f1 = 433 MHz; f2 = 434 MHz - (2) f1 = 900 MHz; f2 = 901 MHz - (3) f1 = 1800 MHz; f2 = 1801 MHz - **Fig 18. Output third-order intercept point as a function of collector current; typical values** IC = 15 mA; Tamb = 25 C. - (1) f1 = 433 MHz; f2 = 434 MHz - (2) f1 = 900 MHz; f2 = 901 MHz - (3) f1 = 1800 MHz; f2 = 1801 MHz **Fig 20. Output third-order intercept point as a function of collector-emitter voltage; typical values** ## VCE = 8 V; Tamb = 25 C. - (1) f = 433 MHz - (2) f = 900 MHz - (3) f = 1800 MHz - **Fig 19. Output power at 1 dB gain compression as a function of collector current; typical values** IC = 15 mA; Tamb = 25 C. - (1) f = 433 MHz - (2) f = 900 MHz - (3) f = 1800 MHz - **Fig 21. Output power at 1 dB gain compression as a function of collector-emitter voltage; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **13 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** - VCE = 8 V; Tamb = 25 C; S = opt. - (1) f = 433 MHz (2) f = 900 MHz (3) f = 1800 MHz **Fig 22. Minimum noise figure as a function of collector current; typical values** - VCE = 8 V; Tamb = 25 C; S = opt. - (1) IC = 1 mA (2) IC = 2 mA (3) IC = 3 mA (4) IC = 5 mA (5) IC = 10 mA (6) IC = 15 mA (7) IC = 20 mA (8) IC = 25 mA - **Fig 23. Minimum noise figure as a function of frequency; typical values** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 1 — 13 January 2014** BFU530A **Product data sheet** **14 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** VCE = 8 V; 400 MHz f 2 GHz. (1) IC = 1 mA (2) IC = 2 mA (3) IC = 3 mA (4) IC = 5 mA (5) IC = 10 mA (6) IC = 15 mA (7) IC = 20 mA (8) IC = 25 mA **Fig 24. Optimum reflection coefficient (** **opt); typical values** ## **10. Application information** More information about the following application example can be found in the application “ ” notes. See Section 5 Design support . The following application example can be implemented using the evaluation kit. See Section 3 “Ordering information” for the order type number. The following application example can be simulated using the simulation package. See “ ” Section 5 Design support . © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **15 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **10.1 Application example: 433 ISM band LNA** 433 ISM band LNA, optimized for low noise. More detailed information of the application example can be found in the application note: _AN11379._ **Fig 25. Schematic 433 MHz ISM band LNA** ## **Table 10. Application performance data at 433 MHz** _ICC = 10 mA; VCC = 3.6 V_ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |s212|insertion power gain||-|17|-|dB| |NF|noise figure||-|1.1|-|dB| |IP3o|output third-order|f1= 433.1 MHz; f2= 433.2 MHz;|-|9|-|dBm| ||intercept point|Pi=30 dBm per carrier||||| © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 1 — 13 January 2014** BFU530A **Product data sheet** **16 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **10.2 Application example: 866 ISM band LNA** 866 ISM band LNA, optimized for low noise. More detailed information of the application example can be found in the application note: _AN11380._ **Fig 26. Schematic 866 MHz ISM band LNA** ## **Table 11. Application performance data at 866 MHz** _ICC = 10 mA; VCC = 3.6 V_ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |s212|insertion power gain||-|15|-|dB| |NF|noise figure||-|1.1|-|dB| |IP3o|output third-order|f1= 866.1 MHz; f2= 866.2 MHz;|-|17|-|dBm| ||intercept point|Pi=30 dBm per carrier||||| © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **17 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **11. Package outline** **Fig 27. Package outline SOT23** BFU530A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. **Rev. 1 — 13 January 2014** **Product data sheet** **18 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **12. Handling information** ## **CAUTION** This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the _ANSI/ESD S20.20_ , _IEC/ST 61340-5_ , _JESD625-A_ or equivalent standards. ## **13. Abbreviations** |**Table 12.**|**Abbreviations**| |---|---| |**Acronym**|**Description**| |AEC|Automotive Electronics Council| |ISM|Industrial, Scientific and Medical| |LNA|Low-Noise Amplifier| |MSG|Maximum Stable Gain| |NPN|Negative-Positive-Negative| |SMA|SubMiniature version A| ## **14. Revision history** |**Table 13.**<br>**Revision**|**history**|||| |---|---|---|---|---| |**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |BFU530A v.1|20140113|Product data sheet|-|-| © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **19 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **15. Legal information** ## **15.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **15.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **15.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **20 of 22** **BFU530A** **NXP Semiconductors** ## **NPN wideband silicon RF transistor** **Suitability for use in automotive applications —** This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. **Translations —** A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **15.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **16. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. BFU530A **Product data sheet** **Rev. 1 — 13 January 2014** **21 of 22** **BFU530A** **NXP Semiconductors** **NPN wideband silicon RF transistor** ## **17. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**7**|**Recommended operating conditions. . . . . . . . 3**| |**8**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 4**| |**9**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4**| |9.1|Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**10**|**Application information. . . . . . . . . . . . . . . . . . 15**| |10.1|Application example: 433 ISM band LNA . . . . 16| |10.2|Application example: 866 ISM band LNA . . . . 17| |**11**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18**| |**12**|**Handling information. . . . . . . . . . . . . . . . . . . . 19**| |**13**|**Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 19**| |**14**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19**| |**15**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 20**| |15.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20| |15.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| |15.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| |15.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21| |**16**|**Contact information. . . . . . . . . . . . . . . . . . . . . 21**| |**17**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2014.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 13 January 2014 Document identifier: BFU530A**
Updated at April 28, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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