BFT92W,115

RF WIDEBAND TRANSISTOR, PNP, -15V, 4GHZ,

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: NXP
Product type: Bipolar RF Transistors
RF WIDEBAND TRANSISTOR, PNP, -15V, 4GHZ, 3-SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-15V; Transition Frequency ft:4GHz; Power Dissipation Pd:300mW; DC
MSL: -
SVHC: No SVHC (17-Dec-2015)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 300mW
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 4GHz
Transistor Case Style: SOT-323
DC Current Gain hFE Min: 50hFE
Operating Temperature Max: 150°C
Continuous Collector Current: -35mA
Collector Emitter Voltage Max: -15V

Delivery and price
Units per pack	500
Price	0.252 €
Current stock	10+
Lead time	30 days

Datasheet

## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


## **BFT92W** PNP 4 GHz wideband transistor 

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Product specification May 1994 

**NXP Semiconductors** 

**Product specification** 

## **PNP 4 GHz wideband transistor** 

## **BFT92W** 

## **FEATURES** 

- High power gain 

- Gold metallization ensures excellent reliability 

- SOT323 (S-mini) package. 

## **APPLICATION** 

It is intended as a general purpose transistor for wideband applications up to 2 GHz. 

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DESCRIPTION<br>Silicon PNP transistor in a plastic,<br>SOT323 (S-mini) package. The  handbook, 2 columns 3<br>BFT92W uses the same crystal as the<br>SOT23 version, BFT92.<br>PINNING 1 2<br>PIN DESCRIPTION Top view MBC870<br>1 base<br>Marking code : W1.<br>2 emitter<br>Fig.1  SOT323.<br>3 collector<br>**----- End of picture text -----**<br>


## **QUICK REFERENCE DATA** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter|||20|V|
|VCEO|collector-emitter voltage|open base|||15|V|
|IC|collector current (DC)||||35|mA|
|Ptot|totalpower dissipation|upto Ts= 93C; note 1|||300|mW|
|hFE|DC currentgain|IC=15 mA; VCE=10 V|20|50|||
|Cre|feedback capacitance|IC= 0; VCB=10 V; f = 1 MHz||0.5||pF|
|fT|transition frequency|IC=15 mA; VCE=10 V;<br>f = 500 MHz||4||GHz|
|GUM|maximum unilateral power gain|IC=15 mA; VCE=10 V;<br>f = 500 MHz; Tamb= 25C||17||dB|
|F|noise figure|IC=5 mA; VCE=10 V;<br>f = 500 MHz||2.5||dB|
|Tj|junction temperature||||150|C|



## **Note** 

1. Ts is the temperature at the soldering point of the collector pin. 

May 1994 

2 

NXP Semiconductors 

Product specification 

BFT92W 

## PNP 4 GHz wideband transistor 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter||20|V|
|VCEO|collector-emitter voltage|open base||15|V|
|VEBO|emitter-base voltage|open collector||2|V|
|IC|collector current(DC)|||25|mA|
|Ptot|totalpower dissipation|upto Ts= 93C; note 1||300|mW|
|Tstg|storage temperature||65|+150|C|
|Tj|junction temperature|||150|C|



## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rthj-s|thermal resistance fromjunction to soldering point|upto Ts= 93C; note 1|190|K/W|



## **Note to the “Limiting values”  and “Thermal characteristics”** 

1. Ts is the temperature at the soldering point of the collector pin. 

## **CHARACTERISTICS** 

Tj = 25 C (unless otherwise specified). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|---|
|ICBO|collector cut-off current|IE= 0; VCB=10 V|||50|nA|
|hFE|DC currentgain|IC=15 mA; VCE=10 V|20|50|||
|fT|transition frequency|IC=15 mA; VCE=10 V;<br>f = 500 MHz; Tamb= 25C||4||GHz|
|Cc|collector capacitance|IE= ie= 0; VCB=10 V;<br>f = 1 MHz||0.65||pF|
|Ce|emitter capacitance|IC= ic= 0; VEB=0.5 V;<br>f = 1 MHz||0.75||pF|
|Cre|feedback capacitance|IC= 0; VCB=10 V;<br>f = 1 MHz||0.5||pF|
|GUM|maximum unilateral power gain;<br>note 1|IC=15 mA; VCE=10 V;<br>f = 500 MHz; Tamb= 25C||17||dB|
|||IC=15 mA; VCE=10 V;<br>f = 1 GHz; Tamb= 25C||11||dB|
|F|noise figure|s=opt; IC=5 mA;<br>VCE=10 V; f = 500 MHz||2.5||dB|
|||s=opt; IC=5 mA;<br>VCE=10 V; f = 1 GHz||3||dB|



## **Note** 

1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log --------------------1 – s11 ~~---~~ s-------221 ~~--~~ 1-----------------------[2] – s22 2 dB. 

May 1994 

3 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

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MLB540<br>400<br>Ptot<br>(mW)<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>T    (   C)ss o<br>Fig.2  Power derating curve.<br>**----- End of picture text -----**<br>


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MLB540<br>400<br>Ptot<br>(mW)<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>T    (   C)ss o<br>Fig.2  Power derating curve.<br>**----- End of picture text -----**<br>


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MLB542<br>1<br>Cre<br>(pF)<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 4 8 12 16 20<br>V       (V)CBCB<br>IC = 0; f = 1 MHz.C = 0; f = 1 MHz. = 0; f = 1 MHz.<br>Fig.4 Feedback capacitance as a function of<br>collector-base voltage, typical values.<br>**----- End of picture text -----**<br>


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MLB542<br>1<br>Cre<br>(pF)<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 4 8 12 16 20<br>V       (V)CBCB<br>IC = 0; f = 1 MHz.C = 0; f = 1 MHz. = 0; f = 1 MHz.<br>Fig.4 Feedback capacitance as a function of<br>collector-base voltage, typical values.<br>**----- End of picture text -----**<br>


## BFT92W 

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MLB541<br>60<br>h FE<br>40<br>20<br>0<br>0 10 20 30<br>I    (mA)CC<br>VCE = 10 V; Tj = 25 C.CE = 10 V; Tj = 25 C. = 10 V; Tj = 25 C. 10 V; Tj = 25 C.10 V; Tj = 25 C.j = 25 C. = 25 C. C.C.<br>Fig.3 DC current gain as a function of collector<br>current, typical values.<br>**----- End of picture text -----**<br>


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MLB541<br>60<br>h FE<br>40<br>20<br>0<br>0 10 20 30<br>I    (mA)CC<br>VCE = 10 V; Tj = 25 C.CE = 10 V; Tj = 25 C. = 10 V; Tj = 25 C. 10 V; Tj = 25 C.10 V; Tj = 25 C.j = 25 C. = 25 C. C.C.<br>Fig.3 DC current gain as a function of collector<br>current, typical values.<br>**----- End of picture text -----**<br>


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MLB543<br>6<br>f T<br>(GHz)<br>V      =CECE<br>4 10 V<br>5 V<br>2<br>0<br>1 10 10 [[2]]<br>I    (mA)CC<br>f = 500 MHz; Tamb = 25 C.amb = 25 C. = 25 C. C.C.<br>Fig.5 Transition frequency as a function of<br>collector current, typical values.<br>**----- End of picture text -----**<br>


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MLB543<br>6<br>f T<br>(GHz)<br>V      =CECE<br>4 10 V<br>5 V<br>2<br>0<br>1 10 10 [[2]]<br>I    (mA)CC<br>f = 500 MHz; Tamb = 25 C.amb = 25 C. = 25 C. C.C.<br>Fig.5 Transition frequency as a function of<br>collector current, typical values.<br>**----- End of picture text -----**<br>


May 1994 

4 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

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MLB544<br>30<br>gain<br>(dB)<br>20 MSG<br>G UM<br>10<br>0<br>0 10 20 30<br>I    (mA)C<br>f = 500 MHz; VCE = 10 V.<br>MSG = maximum stable gain.<br>Fig.6 Gain as a function of collector current,<br>typical values.<br>**----- End of picture text -----**<br>


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MLB546<br>50<br>gain<br>(dB)<br>40<br>G UM<br>30 MSG<br>20<br>10<br>Gmax<br>0<br>10 10 [2] 10 [3] 10 [4]<br>f (MHz)<br>IC = 5 mA; VCE = 10 V.<br>MSG = maximum stable gain.<br>Fig.8 Gain as a function of frequency,<br>typical values.<br>**----- End of picture text -----**<br>


## BFT92W 

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MLB545<br>30<br>gain<br>(dB)<br>20<br>MSG<br>G UM<br>10<br>0<br>0 10 20 30<br>I    (mA)C<br>f = 1 GHz; VCE = 10 V.<br>MSG = maximum stable gain.<br>Fig.7 Gain as a function of collector current,<br>typical values.<br>**----- End of picture text -----**<br>


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MLB547<br>50<br>gain<br>(dB)<br>40<br>G UM<br>MSG<br>30<br>20<br>10<br>Gmax<br>0<br>10 10 [[2]] 10 [[3]] 10 [[4]]<br>f (MHz)<br>IC = 15 mA; VCE = 10 V.C = 15 mA; VCE = 10 V. = 15 mA; VCE = 10 V. 15 mA; VCE = 10 V.15 mA; VCE = 10 V.CE = 10 V. = 10 V. 10 V.10 V.<br>MSG = maximum stable gain.<br>Fig.9 Gain as a function of frequency,<br>typical values.<br>**----- End of picture text -----**<br>


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MLB547<br>50<br>gain<br>(dB)<br>40<br>G UM<br>MSG<br>30<br>20<br>10<br>Gmax<br>0<br>10 10 [[2]] 10 [[3]] 10 [[4]]<br>f (MHz)<br>IC = 15 mA; VCE = 10 V.C = 15 mA; VCE = 10 V. = 15 mA; VCE = 10 V. 15 mA; VCE = 10 V.15 mA; VCE = 10 V.CE = 10 V. = 10 V. 10 V.10 V.<br>MSG = maximum stable gain.<br>Fig.9 Gain as a function of frequency,<br>typical values.<br>**----- End of picture text -----**<br>


May 1994 

5 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

## BFT92W 

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90 [o]<br>1.0<br>1<br>135 [o] 45 [o] 0.8<br>0.5 2<br>0.6<br>0.4<br>0.2 5<br>3 GHz<br>0.2<br>0.2 0.5 1 2 5<br>180 [o] 0 0 [o] 0<br>40 MHz<br>0.2 5<br>0.5 2<br>135 [o] 45 [o]<br>1<br>MLB548 1.0<br>90 [o]<br>VCE = 10 V; IC = 15 mA.<br>Fig.10  Common emitter input reflection coefficient (s11), typical values.<br>**----- End of picture text -----**<br>


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90 [o]<br>135 [o] 45 [o]<br>40 MHz<br>180 [o] 0 [o]<br>50 40 30 20 10 3 GHz<br>135 [o] 45 [o]<br>90 [o] MLB549<br>VCE = 10 V; IC = 15 mA.<br>Fig.11  Common emitter forward transmission coefficient (s21), typical values.<br>**----- End of picture text -----**<br>


May 1994 

6 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

## BFT92W 

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90 [o]<br>135 [o] 45 [o]<br>3 GHz<br>0.5 0.4 0.3 0.2 0.1<br>180 [o] 0 [o]<br>40 MHz<br>135 [o] 45 [o]<br>90 [o] MLB550<br>VCE = 10 V; IC = 15 mA.<br>Fig.12  Common emitter reverse transmission coefficient (s12), typical values.<br>**----- End of picture text -----**<br>


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90 [o]<br>1.0<br>1<br>135 [o] 45 [o] 0.8<br>0.5 2<br>0.6<br>0.4<br>0.2 5<br>0.2<br>0.2 0.5 1 2 5<br>180 [o] 0 0 [o] 0<br>40 MHz<br>0.2 3 GHz 5<br>0.5 2<br>135 [o] 45 [o]<br>1<br>MLB551 1.0<br>90 [o]<br>VCE = 10 V; IC = 15 mA.<br>Fig.13  Common emitter output reflection coefficient (s22), typical values.<br>**----- End of picture text -----**<br>


May 1994 

7 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

## BFT92W 

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MLB552 MLB553<br>6 6<br>handbook, halfpage handbook, halfpage<br>F F<br>(dB) 1 GHz (dB)<br>I    =C<br>15 mA<br>4 500 MHz 4<br>10 mA<br>5 mA<br>2 mA<br>2 2<br>0 0<br>1 10 10 2 10 [2] 10 [3] 10 [4]<br>I    (mA)C f (MHz)<br>VCE = 10 V. VCE = 10 V.<br>Fig.14 Minimum noise figure as a function of  Fig.15 Minimum noise figure as a function of<br>collector current, typical values. frequency, typical values.<br>**----- End of picture text -----**<br>


May 1994 

8 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

## BFT92W 

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90 [o]<br>1.0<br>1<br>135 [o] 45 [o] 0.8<br>0.5 2<br>0.6<br>0.4<br>0.2 F       = 2.5 dBmin 5<br>0.2<br>Γ opt<br>0.2 0.5 1 2 5<br>180 [o] 0 0 [o] 0<br>F = 3 dB<br>0.2 5<br>F = 4 dB<br>F = 5 dB<br>0.5 2<br>135 [o] 45 [o]<br>1<br>MLB554 1.0<br>90 [o]<br>f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 .<br>Fig.16  Common emitter noise figure circles, typical values.<br>**----- End of picture text -----**<br>


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90 [o]<br>1.0<br>1<br>135 [o] 45 [o] 0.8<br>0.5 2<br>0.6<br>F       = 3 dBmin 0.4<br>0.2 5<br>Γ opt<br>0.2<br>0.2 0.5 1 2 5<br>180 [o] 0 0 [o] 0<br>F = 3.5 dB<br>F = 4 dB<br>0.2 5<br>F = 5 dB<br>0.5 2<br>135 [o] 45 [o]<br>1<br>MLB555 1.0<br>90 [o]<br>f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 .<br>Fig.17  Common emitter noise figure circles, typical values.<br>**----- End of picture text -----**<br>


May 1994 

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NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

## BFT92W 

## **SPICE parameters for the BFT92W crystal** 

|**SEQUENCE No.**|**PARAMETER**|**VALUE**|**UNIT**||**SEQUENCE No.**|**SEQUENCE No.**|**PARAMETER**|**PARAMETER**|**PARAMETER**|**VALUE**|**VALUE**||**UNIT**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|1|IS|437.5|aA||36(1)||VJS|||750.0|||mV|
|2|BF|33.58|||37(1)||MJS|||0.000||||
|3|NF|1.009|||38||FC|||0.768||||
|4|VAF|23.39|V||**Note**<br>1.<br>These parameters have not been extracted,<br>default values are shown.|||||||the||
|5|IKF|99.53|mA|||||||||||
|6|ISE|87.05|fA|||||||||||
|7|NE|1.943||||||||||||
|8|BR|4.947||||||||||||
|9|NR|1.002||||||||||||
||||||_handbook, halfpage_<br>B<br>L1<br>Cbe|||||||||
|||||||Ccb||||||||
|10|VAR|3.903|V|||||||||||
|||||||||||||||
|11|IKR|5.281|mA|||B'<br>C'<br>E'<br>L B<br>LE||||||_4_<br>C||
|12|ISC|35.88|fA|||||||||||
|13|NC|1.393||||||||||||
|14|RB|5.000||||||||||||
|15|IRB|1.000|A|||||||||||
|16|RBM|5.000||||||||||||
|17|RE|1.000||||E<br>L3||||||||
|18|RC|10.00||||||||||||
|19(1)|XTB|0.000||||||||||||
|20(1)|EG|1.110|eV|||||||||||
||||||QLB= 50; QLE= 50; QLB,E(f) = QLB,E(f/fc);<br>fc= scaling frequency = 1 GHz.<br>Fig.18  Package equivalent circuit SOT323.|||||||||
|21(1)|XTI|3.000||||||||||||
|22|CJE|746.6|fF|||||||||||
|23|VJE|600.0|mV|||||||||||
|24|MJE|0.357||||||||||||
|25|TF|17.49|ps||**List of components (see Fig.18)**|||||||||
|26|XTF|1.354||||||||||||
|27|VTF|155.6|mV||**DESIGNATION**|||**VALUE**|||**UNIT**|||
|28|ITF|1.000|mA||Cbe|||2|||fF|||
|29|PTF|45.00|deg||Ccb|||100|||fF|||
|30|CJC|937.1|fF||Cce|||100|||fF|||
|31|VJC|396.4|mV||L1|||0.34|||nH|||
|32|MJC|0.200|||L2|||0.10|||nH|||
|33|XCJC|0.106|||L3|||0.34|||nH|||
|34|TR|8.422|ns||LB|||0.60|||nH|||
|35(1)|CJS|0.000|F||LE|||0.60|||nH|||



May 1994 

10 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

## BFT92W 

## **PACKAGE OUTLINE** 

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Plastic surface-mounted package; 3 leads SOT323<br>D B E A<br>X<br>y HE v M A<br>3<br>Q<br>A<br>A1<br>c<br>1 2<br>e1 bp w M B Lp<br>e detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A maxA1 bp c D E e e1 HE Lp Q v w<br>1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23<br>mm 0.1 1.3 0.65 0.2 0.2<br>0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>04-11-04<br> SOT323 SC-70<br>06-03-16<br>**----- End of picture text -----**<br>


May 1994 

11 

NXP Semiconductors 

Product specification 

BFT92W 

## PNP 4 GHz wideband transistor 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS(1)**|**PRODUCT**<br>**STATUS(2)**|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|



## **Notes** 

1. Please consult the most recently issued document before initiating or completing a design. 

2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **DEFINITIONS** 

**Product specification**  The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 

## **DISCLAIMERS** 

**Limited warranty and liability**  Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. 

**Right to make changes**  NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

 **Suitability for use** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

 **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 

May 1994 

12 

NXP Semiconductors 

Product specification 

## PNP 4 GHz wideband transistor 

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. 

 **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 

**Terms and conditions of commercial sale**  NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 

## BFT92W 

 **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 

**Quick reference data**  The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

**Non-automotive qualified products**  Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 

**No offer to sell or license**  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

May 1994 

13 

## _**NXP Semiconductors**_ 

## _**provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise**_ 

## **Customer notification** 

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. 

## **Contact information** 

For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** 

## © NXP B.V. 2010 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 

Date of release: May 1994 

R77/01/pp14

Updated at April 28, 2026

NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.

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