BFS17NTA

## **A Product Line of Diodes Incorporated BFS17N** ~~—~~ **NPN RF TRANSISTOR IN SOT23** 

## **Features** 

- 3.2GHz unity gain for RF switching applications 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP capable (Note 4)** 

## **Applications** 

## **Mechanical Data** 

   - Case: SOT23 

   - Case material: molded plastic. “Green” molding compound. 

   - • UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 **e3** 

   - Weight: 0.008 grams (approximate) 

- RF switch 

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SOT23  C E<br>C<br>B<br>B<br>E<br>Top View<br>Top View  Device symbol  Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Notes 4 & 5) 

|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|**Ordering Informationg Information Information** (Notes 4 & 5)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|BFS17NTA|AEC-Q101|E1N|7|8|3,000|
|BFS17NQTA|Automotive|E1N|7|8|3,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

   3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable.  Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 

   5. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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E1N E1N = Product type Marking Code<br>**----- End of picture text -----**<br>


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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**BFS17N** ~~|~~ 

|**Maximum Ratings** (@TA= +25°C, unless otherwise specified.|ecified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|20|V|
|Collector-Emitter Voltage|VCEO|11|V|
|Emitter-Base Voltage|VEBO|3|V|
|Continuous Collector Current|IC|50|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|310|mW|
||(Note7)||350||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|403|°C/W|
||(Note 7)||357||
|Thermal Resistance,Junction to Leads|(Note 8)|RθJL|350|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge- Human BodyModel|ESD HBM|2,000|V|2|
|Electrostatic Discharge - Machine Model|ESD MM|100|V|A|



- Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; 7. Same as Note 6, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB 8. Thermal resistance from junction to solder-point (at the end of the leads). 

   9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**BFS17N** 

## **Thermal Characteristics and Derating information** 

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0.4 400<br>PF} ] i ttt ttt Et il 350 a a | || |<br>0.3 300<br>PN ETTalll<br>NESTE 250 fr | Tl<br>D=0.5<br>0.2 PTT 200 TT<br>PF} | ttTIT |NEELINE L E Ea 150 SeTe D=0.1 eT0 an | |<br>0.1 100 D=0.2 Single Pulse<br>BRIN a HATaut! std ll<br>50<br>0.0 PF} |] tt td ttt TNE\ 0 coneSeni | TN D=0.05 aMET|<br>0 25 50 75 100 125 150 100µ 1m 10m 100m 1 10 100 1k<br> Temperature (°C) Pulse Width (s)<br> Max Power Dissipation (W) Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Derating Curve** 

**Transient Thermal Impedance** 

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10<br>SH Ht Single Pulse. Tamb=25°C<br>DNNUTTPPA [TT][PT] |TTT<br>1<br>SUITPH [TUTTE] UT UT TT TT<br>CeoS<br>lS<br>PTT TIPoe<br>0.1 CHT<br>10m 100m 1 10 100 1k<br>Pulse Width (s)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**Pulse Power Dissipation** 

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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated BFS17N** | 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>~~ee~~|**Symbol **<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max **<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition **<br>~~ee~~|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage<br>~~ee~~|BVCBO<br>~~ee~~|20<br>~~ee~~|−<br>~~ee~~|−<br>~~ee~~|V<br>~~ee~~|IC= 10µA<br>~~ee~~|
|Collector-Emitter Breakdown Voltage(Note 10)<br>~~HT~~|BVCEO<br>~~HT~~|11<br>~~HT~~|−<br>~~HT~~|−<br>~~HT~~|V<br>~~HT~~|IC= 1mA<br>~~HT~~|
|Emitter-Base Breakdown Voltage<br>~~HT~~<br>~~Se~~|BVEBO<br>~~HT~~|3<br>~~HT~~|−<br>~~HT~~|−<br>~~HT~~|V<br>~~HT~~|IE= 10µA<br>~~HT~~|
|Collector Cutoff Current<br>~~Se~~|ICBO|−|−|0.5|µA|VCB= 10V|
|Emitter Cutoff Current<br>~~Se~~|IEBO|−|−|0.5|µA|VEB= 2V|
|Static Forward Current Transfer Ratio(Note 10)<br>~~Se~~<br>~~ee~~|hFE<br>~~ee~~|56<br>~~ee~~|−<br>~~ee~~|180<br>~~ee~~|−<br>~~ee~~|IC= 5mA,VCE= 10V<br>~~ee~~|
|Collector-Emitter Saturation Voltage(Note 10)<br>~~ee~~|VCE(sat)<br>~~ee~~<br>~~e~~|−<br>~~ee~~<br>~~e~~~~**e**~~|−<br>~~ee~~<br>~~es~~|0.5<br>~~ee~~<br>~~es~~|V<br>~~ee~~<br>~~ee~~|IC= 25mA,IB= 5mA<br>~~ee~~|
|Transition Frequency (Note 10)<br>~~ee~~|fT<br>~~ee~~<br>~~e~~|1.4<br>~~ee~~<br>~~e~~~~**e**~~|3.2<br>~~ee~~<br>~~es~~|−<br>~~ee~~<br>~~es~~|GHz<br>~~ee~~<br>~~ee~~|IE= 25mA, VCE= 5V,<br>f = 500MHz<br>~~ee~~|
|Collector Output Capacitance(Note 10)<br>~~e~~|Cob<br>~~e~~<br>~~e~~|−<br>~~e~~~~**e** ~~|0.8<br> ~~es ~~|1.5<br> ~~es ~~|pF<br> ~~ee~~|VCB= 10V,f = 1MHz|



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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated BFS17N** ~~|~~ 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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200<br>VCE=5V 0.06 Ten base steps<br>100μA per step<br>150 CoP 0.05<br>SST T=150°C a=<br>SONUIT) 0.04 «Cee<br>T=85°C<br>100<br>0.03<br>Roe |  bz<br>T=25°C<br>0.02<br>AH G~x— oo<br>50<br>iyTree T=-55°C | | 0.01  fee<br>re | AEE<br>0 0 0.00<br>0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10<br> IC   Collector Current (mA) VCE (V)<br>1100 1.6<br>Ta=25°C<br>1000 1.5<br>T=-55°C f=1MHz<br>|_| T=25°C IS Et<br>900 eee 1.4 =e’<br>800 1.3<br>700 =Soe] | 1.2 [SS}] |} + +} —<br>600 1.1<br>pare T=85°C PN<br>500 T=150°C V =5V 1.0<br>CE<br>400 STi as 0.9 PoeEE<br>0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>IC   Collector Current (mA) VEB  Emitter-Base Voltage (V)<br>4<br>1.4 | | | | ht Ta=25°C<br>V =10V<br>CE f=1MHz<br>3<br>1.2<br>PAN<br>7 EN fe<br>2 PON V =5V Ai | | | |<br>CE 1.0<br> ONS 4 KEES<br>PONTE PN<br>1 ENE EIN 0.8 a See<br>Tamb=25°C<br>f=500MHz VCE=1V VCE=2V<br>0 a a 0.6 | | | tl | |<br>0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 5 10 15 20<br>pot SY EEBRSEEE<br>IC   Collector Current (mA) VCB  Collector-Base Voltage (V)<br> hFE  Gain<br>   Collector Current (A)<br>C<br>I<br> (V)<br>BE(ON)<br>V<br>  Capacitance (pF)<br>EB<br>C<br>fT  (GHz)<br>  Capacitance (pF)<br>CB<br>C<br>**----- End of picture text -----**<br>


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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**BFS17N** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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A SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>= 7] ee B  1.20 1.40 1.30<br>B C C 2.30 2.50 2.40<br>D  0.89 1.03 0.915<br>F  0.45  0.60  0.535<br>mm =—== G  1.78  2.05  1.83<br>H H  2.80 3.00 2.90<br>J 0.013 0.10 0.05<br>K M K  0.903 1.10 1.00<br>K1<br>K1  -  -  0.400<br>D<br>J F G L M L  00.45 .085 0.61 0.18 0.55 0.11<br>α 0°  8°  -<br>All Dimensions in mm<br>ep =—==<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>Z<br>| a LF C<br>X E<br>iWajoeho<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated BFS17N** | 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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BFS17N Document Number DS32160 Rev. 3 - 2 

October 2012 © Diodes Incorporated