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BFR520,215
RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ,
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: Bipolar RF Transistors
- RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:9GHz; Power Dissipation Pd:300mW; DC Col
- MSL: -
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3Pins
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 9GHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 120hFE
- Operating Temperature Max: 175°C
- Continuous Collector Current: 70mA
- Collector Emitter Voltage Max: 15V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.204 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **BFR520** **==> picture [12 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> SOT23<br>**----- End of picture text -----**<br> ## **NPN 9 GHz wideband transistor** ~~OO~~ **Rev. 4 — 13 September 2011** ## **Product data sheet** ## **1. Product profile** ## **1.1 General description** The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. ## **1.2 Features and benefits** - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. ## **1.3 Applications** - RF front end wideband applications in the GHz range - Analog and digital cellular telephones - Cordless telephones (CT1, CT2, DECT, etc.) - Radar detectors - Pagers and satellite TV tuners (SATV) - Repeater amplifiers in fiber-optic systems. ## **1.4 Quick reference data** ## **Table 1. Quick reference data** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |VCBO|collector-base voltage|||-|-|20|V| |VCES|collector-emitter|RBE= 0||-|-|15|V| ||voltage||||||| |IC|collector current (DC)|||-|-|70|mA| |Ptot|total power dissipation|up to Tsp= 97C|[1]|-|-|300|mW| |hFE|DC current gain|IC= 20 mA; VCE= 6 V||60|120|250|| |Cre|feedback capacitance|IC= ic= 0 A; VCB= 6 V;||-|0.4|-|pF| |||f = 1 MHz|||||| |fT|transition frequency|IC= 20 mA; VCE= 6 V;||-|9|-|GHz| |||f = 1 GHz|||||| |GUM|maximum unilateral|IC= 20 mA; VCE= 6 V;|||||| ||power gain|Tamb= 25C|||||| |||f = 900 MHz||-|15|-|dB| |||f = 2 GHz||-|9|-|dB| **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** |**Table 1.**<br>**Quick reference data**|_…continued_| |---|---| |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |s212<br>insertion power gain|IC= 20 mA; VCE= 6 V;<br>Tamb= 25C;<br>f = 900 MHz<br>13<br>14<br>-<br>dB| |NF<br>noise figure|s=opt; Tamb= 25C| ||IC= 5 mA; VCE= 6 V;<br>f = 900 MHz<br>-<br>1.1<br>1.6<br>dB| ||IC= 20 mA; VCE= 6 V;<br>f = 900 MHz<br>-<br>1.6<br>2.1<br>dB| ||IC= 5 mA; VCE= 8 V;<br>f = 2 GHz<br>-<br>1.9<br>-<br>dB| - [1] Tsp is the temperature at the soldering point of the collector tab. ## **2. Pinning information** **Table 2. Pinning** |**Pin**|**Description**|**Simplified**|**outline**|**outline**|**Symbol**||| |---|---|---|---|---|---|---|---| |1|base||||||| |2|emitter||3||||3| |3|collector||||1||| |||1|2||||| ||||||||2| |||||||_sym021_|| ## **3. Ordering information** |**Table 3.**<br>**Ordering information**|**Table 3.**<br>**Ordering information**|**Table 3.**<br>**Ordering information**|**Table 3.**<br>**Ordering information**| |---|---|---|---| |**Type number**|**Package**||| ||**Name**|**Description**|**Version**| |BFR520|-<br>plastic surface mounted package; 3 leads<br>SOT23||| ## **4. Marking** **Table 4. Marking** |**Type number**|**Marking cod**~~**e**~~**[1]**| |---|---| |BFR520|32*| - [1] * = p: Made in Hong Kong - = t: Made in Malaysia - = W: Made in China. © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 4 — 13 September 2011** BFR520 **Product data sheet** **2 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** ## **5. Limiting values** ## **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VCBO|collector-base voltage|open emitter||-|20|V| |VCES|collector-emitter voltage|RBE= 0||-|15|V| |VEBO|emitter-base voltage|open collector||-|2.5|V| |IC|collector current (DC)|||-|70|mA| |Ptot|total power dissipation|up to Tsp= 97C|[1]|-|300|mW| |Tstg|storage temperature|||65|150|C| |Tj|junction temperature|||-|175|C| [1] Tsp is the temperature at the soldering point of the collector tab. ## **6. Thermal characteristics** **Table 6. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Typ**|**Unit**| |---|---|---|---|---|---| |Rth(j-s)|thermal resistance from junction to soldering point||[1]|260|K/W| [1] Tsp is the temperature at the soldering point of the collector tab. ## **7. Characteristics** **Table 7. Characteristics** _Tj = 25_ _C unless otherwise specified._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |ICBO<br>collector cut-off<br>current|IE= 0 A; VCB= 6 V<br>-<br>-<br>50<br>nA| |hFE<br>DC current gain|IC= 20 mA; VCE= 6 V<br>60<br>120<br>250| |Ce<br>emitter<br>capacitance|IC= ic= 0 A; VEB= 0.5 V;<br>f = 1 MHz<br>-<br>1<br>-<br>pF| |Cc<br>collector<br>capacitance|IE= ie= 0 A; VCB= 6 V;<br>f = 1 MHz<br>-<br>0.5<br>-<br>pF| |Cre<br>feedback<br>capacitance|IC= 0 A; VCB= 6 V;<br>f = 1 MHz<br>-<br>0.4<br>-<br>pF| |fT<br>transition<br>frequency|IC= 20 mA; VCE= 6 V;<br>f = 1 GHz<br>-<br>9<br>-<br>GHz| |GUM<br>maximum<br>unilateral power<br>gain|IC= 20 mA; VCE= 6 V;<br>Tamb= 25C<br>[1]| ||f = 900 MHz<br>-<br>15<br>-<br>dB| ||f = 2 GHz<br>-<br>9<br>-<br>dB| |s212<br>insertion power<br>gain|IC= 20 mA; VCE= 6 V;<br>Tamb= 25C; f = 900 MHz<br>13<br>14<br>-<br>dB| © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Rev. 4 — 13 September 2011** **Product data sheet** **3 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** ## **Table 7. Characteristics** _…continued_ _Tj = 25_ _C unless otherwise specified._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |NF<br>noise figure|s=opt; VCE= 6 V;<br>Tamb= 25C| ||IC= 5 mA; f = 900 MHz<br>-<br>1.1<br>1.6<br>dB| ||IC= 20 mA; f = 900 MHz<br>-<br>1.6<br>2.1<br>dB| ||IC= 5 mA; f = 2 GHz<br>-<br>1.9<br>-<br>dB| |PL(1dB)<br>output power at<br>1 dB gain<br>compression|IC= 20 mA; VCE= 6 V;<br>RL= 50; Tamb= 25C;<br>f = 900 MHz<br>-<br>17<br>-<br>dBm| |ITO<br>third order<br>intercept point|[2]<br>-<br>26<br>-<br>dBm| - [1] GUM is the maximum unilateral power gain, assuming s12 is zero and **==> picture [177 x 36] intentionally omitted <==** [2] IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz Measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz. **==> picture [235 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> mra702<br>400<br>Ptot<br>(mW)<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>Tsp ( ° C)<br>Fig 1. Power derating curve.<br>**----- End of picture text -----**<br> **==> picture [235 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> mra703<br>250<br>hFE<br>200<br>150<br>100<br>50<br>0<br>10 [−] [2] 10 [−] [1] 1 10 10 [2]<br>IC (mA)<br>VCE = 6 V.<br>Fig 2. DC current gain as a function of collector<br>current.<br>**----- End of picture text -----**<br> © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Rev. 4 — 13 September 2011** **Product data sheet** **4 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> mra704<br>0.6<br>Cre<br>(pF)<br>0.4<br>0.2<br>0<br>0 4 8 12<br>VCB (V)<br>**----- End of picture text -----**<br> ## IC = 0 A; f = 1 MHz. **Fig 3. Feedback capacitance as a function of collector-base voltage.** **==> picture [233 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> mra706<br>25<br>gain<br>(dB)<br>20<br>MSG Gmax<br>GUM<br>15<br>10<br>5<br>0<br>0 10 20 30<br>IC (mA)<br>VCE = 6 V; f = 900 MHz.<br>**----- End of picture text -----**<br> **Fig 5. Gain as a function of collector current; f = 900 MHz.** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> mra705<br>12<br>fT<br>(GHz) V CE = 6 V<br>8 3 V<br>4<br>0<br>10 [−] [1] 1 10 10 [2]<br>IC (mA)<br>**----- End of picture text -----**<br> Tamb = 25 C; f = 1 GHz. **Fig 4. Transition frequency as a function of collector current.** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> mra707<br>25<br>gain<br>(dB)<br>20<br>15<br>10 Gmax<br>GUM<br>5<br>0<br>0 10 20 30<br>IC (mA)<br>**----- End of picture text -----**<br> VCE = 6 V; f = 2 GHz. **Fig 6. Gain as a function of collector current; f = 2 GHz.** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Rev. 4 — 13 September 2011** **Product data sheet** **5 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** **==> picture [233 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> mra708<br>50<br>gain<br>(dB) GUM<br>40<br>MSG<br>30<br>20<br>10 Gmax<br>0<br>10 10 [2] 10 [3] 10 [4]<br>f (MHz)<br>VCE = 6 V; IC = 5 mA.<br>Fig 7. Gain as a function of frequency; IC = 5 mA.C = 5 mA. = 5 mA.<br>mra714<br>5 20<br>Fmin Gass<br>(dB) f (MHz) (dB)<br>4 900 15<br>1000<br>Gass<br>3 10<br>2000<br>2000<br>2 5<br>1000 Fmin<br>900<br>500<br>1 0<br>0 − 5<br>1 10 10 [2]<br>IC (mA)<br>**----- End of picture text -----**<br> **Fig 7. Gain as a function of frequency; IC = 5 mA.C = 5 mA. = 5 mA.** VCE = 6 V. **Fig 9. Minimum noise figure and associated available gain as functions of collector current.** **==> picture [233 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> mra709<br>50<br>gain<br>(dB)<br>GUM<br>40<br>MSG<br>30<br>20<br>10 Gmax<br>0<br>10 10 [2] 10 [3] 10 [4]<br>f (MHz)<br>VCE = 6 V; IC = 20 mA.<br>Fig 8. Gain as a function of frequency; IC = 20 mA.C = 20 mA. = 20 mA.<br>mra715<br>5 20<br>Fmin IC (mA) Gass<br>(dB) 5 20 (dB)<br>4 15<br>Gass<br>3 10<br>2 5<br>20<br>1 Fmin 0<br>5<br>0 − 5<br>10 [2] 10 [3] 10 [4]<br>f (MHz)<br>**----- End of picture text -----**<br> **Fig 8. Gain as a function of frequency; IC = 20 mA.C = 20 mA. = 20 mA.** - VCE = 6 V. **Fig 10. Minimum noise figure and associated available gain as functions of frequency.** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 4 — 13 September 2011** BFR520 **Product data sheet** **6 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** **==> picture [397 x 529] intentionally omitted <==** **----- Start of picture text -----**<br> stability<br>circle<br>90 °<br>1.0<br>+ 1<br>135 ° + 0.5 + 2 45 ° 0.8<br>pot. unst.<br>region 0.6<br>0.4<br>+ 0.2 Fmin = 1.1 dB + 5<br>Γ OPT 0.2<br>180 ° 0 0.2 0.5 1 2 5 0 ° 0<br>F = 1.5 dB<br>F = 2 dB<br>− 0.2 − 5<br>F = 3 dB<br>− 135 ° − 0.5 − 2 − 45 °<br>− 1<br>1.0<br>− 90 ° mra716<br>Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 900 MHz.<br>Fig 11. Noise circle figure; f = 900 MHz.<br>90 °<br>1.0<br>+ 1<br>135 ° + 0.5 + 2 45 ° 0.8<br>0.6<br>F = 3 dB<br>F = 2.5 dB<br>0.4<br>+ 0.2 F = 2 dB + 5<br>Fmin = 1. 9 dB 0.2<br>180 ° 0 Γ 0MS .2 0.5 Γ OPT 1 2 5 0 ° 0<br>Gmax = 9.3 dB<br>G = 9 dB<br>− 0.2 − 5<br>G = 8 dB<br>G = 7 dB<br>− 135 ° − 0.5 − 2 − 45 °<br>− 1<br>1.0<br>− 90 ° mra717<br>**----- End of picture text -----**<br> Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 2000 MHz. **Fig 12. Noise circle figure; f = 2000 MHz.** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Product data sheet** **Rev. 4 — 13 September 2011** **7 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** **==> picture [381 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 90 °<br>1.0<br>+ 1<br>135 ° + 0.5 + 2 45 ° 0.8<br>0.6<br>0.4<br>+ 0.2 + 5<br>3 GHz 0.2<br>180 ° 0 0.2 0.5 1 2 5 10 0 ° 0<br>40 MHz<br>− 0.2 − 5<br>− 135 ° − 0.5 − 2 − 45 °<br>− 1<br>1.0<br>− 90 ° mra710<br>**----- End of picture text -----**<br> VCE = 6 V; IC = 20 mA; Zo = 50 . **Fig 13. Common emitter input reflection coefficient (s11).** **==> picture [381 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 90 °<br>135 ° 45 °<br>40 MHz<br>180 ° 3 GHz 0 °<br>50 40 30 20 10 0<br>− 135 ° − 45 °<br>− 90 ° mra711<br>**----- End of picture text -----**<br> **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VCE = 6 V; IC = 20 mA.<br>**----- End of picture text -----**<br> **Fig 14. Common emitter forward transmission coefficient (s21).** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Product data sheet** **Rev. 4 — 13 September 2011** **8 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** **==> picture [381 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 90 °<br>135 ° 45 °<br>3 GHz<br>180 ° 40 MHz 0 °<br>0.5 0.4 0.3 0.2 0.1 0<br>− 135 ° − 45 °<br>− 90 ° mra712<br>**----- End of picture text -----**<br> VCE = 6 V; IC = 20 mA. **Fig 15. Common emitter reverse transmission coefficient (s12).** **==> picture [381 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 90 °<br>1.0<br>+ 1<br>135 ° + 0.5 + 2 45 ° 0.8<br>0.6<br>0.4<br>+ 0.2 + 5<br>0.2<br>180 ° 0 0.2 0.5 1 2 5 10 0 ° 0<br>40 MHz<br>3 GHz<br>− 0.2 − 5<br>− 135 ° − 0.5 − 2 − 45 °<br>− 1<br>1.0<br>− 90 ° mra713<br>**----- End of picture text -----**<br> VCE = 6 V; IC = 20 mA; Zo = 50 . **Fig 16. Common emitter output reflection coefficient (s22).** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Product data sheet** **Rev. 4 — 13 September 2011** **9 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** ## **8. Package outline** ## **SOT23** **==> picture [478 x 581] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 3 leads SOT23<br>D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-04<br> SOT23 TO-236AB<br>06-03-16<br>**----- End of picture text -----**<br> **Fig 17. Package outline SOT23 (TO-236AB).** BFR520 © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 4 — 13 September 2011** **Product data sheet** **10 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** ## **9. Revision history** |**Table 8.**<br>**Revision**|**history**||| |---|---|---|---| |**Document ID**|**Release date**<br>**Data sheet status**|**Change notice**|**Supersedes**| |BFR520 v.4|20110913<br>Product data sheet|-|BFR520 v.3| |Modifications:|**•** The format of this data sheet has been redesigned to comply||with the new identity| ||guidelines of NXP Semiconductors.||| ||**•** Legal texts have been adapted to the new company name where appropriate.||| ||**•** Package outline drawings have been updated to the latest version.||| |BFR520 v.3|20040901<br>Product data sheet|-|BFR520_CNV v.2| |(9397 750 13397)|||| |BFR520_CNV v.2|19971204<br>Product specification|-|-| © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 4 — 13 September 2011** BFR520 **Product data sheet** **11 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** ## **10. Legal information** ## **10.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **10.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **10.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BFR520 All information provided in this document is subject to legal disclaimers. **Product data sheet** © NXP B.V. 2011. All rights reserved. **Rev. 4 — 13 September 2011** **12 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Non-automotive qualified products —** Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. ## **10.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **11. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2011. All rights reserved. All information provided in this document is subject to legal disclaimers. BFR520 **Rev. 4 — 13 September 2011** **Product data sheet** **13 of 14** **BFR520** **NXP Semiconductors** **NPN 9 GHz wideband transistor** ## **12. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 3**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**10**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |10.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |10.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |10.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |10.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |**11**|**Contact information. . . . . . . . . . . . . . . . . . . . . 13**| |**12**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2011.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 13 September 2011 Document identifier: BFR520**
Updated at April 28, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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