BFR193L3E6327XTMA1

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, TSLP-3-1

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Manufacturer: INFINEON
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 580mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 8GHz
Transistor Case Style: TSLP-3-1
DC Current Gain hFE Min: 70hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 80mA
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	5000
Price	0.108 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 13, 2026