BFR182E6327HTSA1

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-23

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Manufacturer: INFINEON
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:35mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 250mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 8GHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 100hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 35mA
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	5000
Price	0.098 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 13, 2026