BFR182E6327HTSA1
Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 250 mW, 35 mA, SOT-23
- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:35mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 8GHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 35mA
- Collector Emitter Voltage Max: 12V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.124 € |
| Current stock | 10+ |
| Lead time | 30 days |
SIEMENS
BFR 182
## NPN Silicon RF Transistor
- ¢ For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA
- fy = BGHz F = 1.2dB at 900MHz
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
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|---|---|---|
|Type|Package|
|BFR|182|SOT-23|
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|---|---|---|---|---|---|
|Maximum|Ratings|
|Parameter|symboi|||[Values]|[[Unit]|
|Collector-emitter|voltage|12|Vv|
|Collector-emitter|voltage|20|
|Collector-base|voltage|20|
|Emitter-base|voltage|2|
|“Collectorcurrent|mA|
|TotalBase currentpower|dissipation|Csa|mw|
|Junction|temperature|150|°C|
|Ambient|temperature|-|65|...+|150|
|Storage|temperature|-|65...|+|150|
|Thermal|Resistance|
|Junction|- soldering point|1)|[Finis _||< 230|[Kw|
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1) Tg is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1371
09.96
SIEMENS
BFR 182
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|---|---|---|---|---|---|---|---|
|Electrical|Characteristics|at|T, =|25°C,|unless|otherwise|specified.|
|||[min|typ.max.|
|DC|Characteristics|
|Collector-emitter|breakdown|voltage|ViBryCcEO|Vv|
|Collector-emitter|cutoff current|loes|yA|
|Collector-base|cutoff|current|IcBo|nA|
|Emitter-base cutoff current|feof|pA|
|DC current gain|rel|:|
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BFR 182
## SIEMENS
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Electrical Characteristics at T, = 25°C, unless otherwise specified.<br>Parameter Values Unit<br>_ | min typ. [[max]<br>AC Characteristics<br>Transition frequency fr GHz<br>Collector-baseVop= 10 V, Vee capacitance = tbe = 0, f= 1 MHz coCob toe0.33 _| pF<br>Collector-emitterVoge= 10 V, Vee capacitance= Vbe = 0, f= 1 MHz m@ | ol0.2 ||<br>Emitter-base capacitanceVeg= 0.5 V, Vog= Vb= 0, f=1MHz |e<br>Noise figure F dB<br>Io=3MA, VoE= 8 V, Zg = Sgopt<br>f= 900 MHz<br>f= 1.8 GHz<br>Power gain 2) Gma<br>Ig = 10 MA, Vee = 8 V, Zs = Zgop1<br>a= ZLopt<br>f= 900 MHz 17.5<br>f= 1.8 GHz 11.5<br>Transducer gain 1Sot¢l?<br>lo = 10 MA, Voge= 8 V, Zyg =2Z,= 0 2<br>f= 900 MHz 14.5<br>f= 1.8 GHz 9<br>**----- End of picture text -----**<br>
2) Gna = 1S21/Syal (-(k?-1)"/2)
Semiconductor Group
1373
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BFR 182
## SIEMENS
## SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
|Transistor Chip Data|Transistor Chip Data||||||||
|---|---|---|---|---|---|---|---|---|
|IS=|4.8499|fA|BF=|84.113|-|NF=|0.56639|—_-|
|VAF=|21.742|Vv|IKF =|0.14414|A|ISE=|8.4254|fA|
|NE =|0.91624|-|BR =|10.004|-|NR =|0.54818|-|
|VAR =|2.2595|Vv|IKR =|0.03978|A|ISC =|§.9438|fA|
|NC =|0.5641|-|RB =|2.8263|Q|IRB =|0.071955|mA|
|RBM =|3.4217|Q|RE =|2.1858|Q|RC =|1.8159|Q|
|CJE =|8.8619|fF|VWE=|1.0378|Vv|MJE =|0.40796|-|
|TF =|22.72|ps|XTF =|0.43147|-|VIF=|0.34608|V|
|ITF =|6.5523|mA|PTF =|0|deg|CJC =|490.25|fF|
|VJC =|1.0132|Vv|MJC =|0.31068|-|XCJC=|0.19281|-|
|TR=|1.7541|ns|CJS =|0|fF|VJS =|0.75|Vv|
|MJS =|0|:|XTB =|O|-|EG =|1.14|eV|
|XTI =|3|-|FC =|0.64175|-|TNOM|300|K|
|All parameters are ready to||use, no scaling is necessary.|||||||
|Extracted on behalfofSIEMENS Small Signal Semiconductors|||||by:||||
|Institut ftir Mobil-und Satellitenfunktechnik (IMST)|||||||||
|© 1996 SIEMENS AG|||||||||
|Package|Equivalent Circuit:||||||||
|||||||LBI =|0.85|nH|
||||beg|||LBO =|0.51|nH|
||—_—_———|+-__—-|||||LEl=|0.69|nH|
||qT"||F’<br>be|y"||LCO **=**<br>CBE<br>CCB =|0.49<br>73<br>84|nH<br>fF<br>fF|
|||||||CCE =|165|fF|
||||Leo||||||
||||||EHAQT222||||
|||||||Validupto6GHz|||
For examples and ready to use parameters please contact your focal Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://Awww.siemens.de/Semiconductor/products/35/357.htm
Semiconductor Group
1374
09.96
BFR 182
## SIEMENS
## Total power dissipation Pig, = f(Ta*, Ts)
* Package mounted on epoxy
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JT<br>PTT<br>TTT<br>TCT NH<br>TEN\\\ |<br>UEol A<br>0 20 40 60 80 100 120 °C 150<br>—» he<br>Permissible Pulse Load Rinjs = f(t) Permissible Pulse Load Pulse Load Load Piotmax/Protoc = = F<br>10° Cn 10? oro<br>H 0 TT HL |<br>SthAN! aEa SG aR mea CeBUne Te COC<br>Posse HEHE ECCT ATC TE TE TTT<br>(TMT<br>ee aTM TTT UT TC) om?Pooe TIT UTM TTAAT LTC Tt<br>| ilSe 10" N UNM Bes 2 of We<br>10? Pee [Mi] BU a) [a] Ta0){1 Saa ee<br>mea a, KA ae Ra BenN Mmm Zagan watt 0.2 TCO Che<br>Hed i ae<br>Or A Se 20cn mii, ih “il Bat Mthatmn<br>#1 MUM maces a TEL<br>mawto” 10%Sea10°A 10% 10° 10%Aa 107s 10° So107 10% 10° 107% 10° 10% 107s 10°<br>—— 4 i 6<br>**----- End of picture text -----**<br>
Permissible Pulse Load Pulse Load Load Piotmax/Protoc = = F (fp)
Semiconductor Group
1375
09.96
SIEMENS
BFR 182
Collector-base capacitance C,p = f (Vcp) VBE= “Ye= 0, f= 1MHz
## Transition frequency f; = f (ic)
Voce = Parameter
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Power Gain Gma, Gms = Alc) f=0.9GHz Voge = Parameter
Power Gain Gma, Gms = Kilc) f= 1.8GHz
Voge = Parameter
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Semiconductor Group
1376
09.96
BFR 182
## SIEMENS
Power Gain Gain Gma, Gms = = 4Vce): 1Sp4l2 = = KVog—)i---
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Power Gain Gain Gma, Gms = = 4Vce): Intermodulation Intercept Point /P3=f(/c)<br>1Sp4l2 = = KVog—)i--- (3rd order, Output, Z,=2Z =500)<br>Parameter Vcr = Parameter, f= 900MHz<br>MT201201 =10mA 30TeI<br>5<br>|_| 0.9GH2 pom AA sy<br>at T<br>re _fe<br>14 [[0.9GHz]] yy,<br>— [[—~]] pe<br>oo 1.8GHz fren{| 4v<br>eee AY<br>8 7 5<br>etTyTy _ _ of _<br>ty) 2 4 6 8 vo 12 0 5 10 15 Vv 25<br>——m Vor ——m Veg<br>Power Gain Gma, Gms= Gms== Kf Power Gain |S54/2= Af<br>= Parameter Vcore = Parameter<br>32<br>ml pF | | mi pF |ft<br>co why | tT TTTg IA |<br>a \ WES<br>7 WEE wR<br>START A<br>12 aNei P |__| 8NWx. |<br>“TRY 7 Sa<br>a po | 10V. 4 ps _| |<br>a_ SSS SSE mia<br>ftTo) oa | | tf | !<br>: 00 OF 10 15 20 25 GHz 35 00 05 #10 15 20 25 GHz 35<br>——p f oe ff<br>**----- End of picture text -----**<br>
f= Parameter
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MT201201 =10mA<br>G |_| 0.9GH2<br>at<br>re<br>14 [[0.9GHz]]<br>— [[—~]]<br>oo 1.8GHz<br>eee<br>8 7<br>etTyTy _ _<br>ty) 2 4 6 8 vo 12<br>——m Vor<br>**----- End of picture text -----**<br>
Power Gain Gma, Gms= Gms== Kf
Voge = Parameter
Semiconductor Group
1377
09.96
Updated at April 21, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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