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BFQ790H6327XTSA1
Bipolar - RF Transistor, NPN, 6.1 V, 20 GHz, 1.5 W, 300 mA, SOT-89
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:6.1V; Transition Frequency ft:20GHz; Power Dissipation Pd:1.5W; DC Collector Current:300mA; DC Current Gain hFE:60hFE; R
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 1.5W
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 20GHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 60hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 300mA
- Collector Emitter Voltage Max: 6.1V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.817 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **BFQ790**
## **High linearity RF medium power transistor**
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## **Product description**
The BFQ790 is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology.
## **Feature list**
- _OIP_ 3 = 38.5 dBm at 900 MHz, 5 V, 250 mA
- _OP_ 1dB = 27 dBm at 900 MHz, 5 V, 250 mA corresponding to 40% collector efficiency
- High gain _G_ ms = 23 dB at 900 MHz, 5 V, 250 mA
- High maximum RF input power _P_ RFin,max = 18 dBm
## **Product validation**
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
## **Potential applications**
- Commercial and industrial wireless infrastructure
- ISM band medium power amplifiers and drivers
- Automated test equipment
- UHF television, CATV and DBS
## **Device information**
|**Product name / Ordering code**|**Package**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Marking **|**Pieces / Reel**|
|---|---|---|---|---|---|---|
|BFQ790 / BFQ790H6327XTSA1|SOT89|1 = B|2 = E|3 = C|R3|1000|
_**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_
Please read the Important Notice and Warnings at the end of this document
Datasheet **www.infineon.com**
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## **Table of contents**
## **Table of contents**
||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**2**|**Recommended operating conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**3**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5|
|**4**|**Electrical performance in test fixture**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|4.1|DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|4.2|AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|4.3|Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|4.4|Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|**5**|**Package information SOT89**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22|
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## **Absolute maximum ratings**
## **1 Absolute maximum ratings**
## **Table 2 Absolute maximum ratings at** _**T**_ **A = 25 °C (unless otherwise specified)**
|**Parameter**|**Symbol**|**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|
|||**Min.**|**Max.**|||
|Collector emitter voltage|_V_CE|–<br>–|6.1<br>5.1|V|_T_A= 25 °C<br>_T_A= -40 °C|
|Collector base voltage|_V_CB|–|18|V|–|
|Instantaneous total base emitter<br>reverse voltage|_v_BE|-2|–|V|DC + RF swing|
|Instantaneous total collector current|_i_C|–|600|mA|DC + RF swing|
|DC collector current|_I_C|–|300|mA|–|
|DC base current|_I_B|–|10|mA|–|
|RF input power|_P_RFin|–|18|dBm|In- and output matched|
|Mismatch at output|_VSWR_|–|10:1||In compression, over all<br>phase angles|
|ESD stress pulse|_V_ESD|-500|500|V|HBM, all pins, acc. to ANSI /<br>ESDA / JEDEC JS-001-2012|
|Dissipated power|_P_diss|–|1500|mW|_T_S≤ 112.5 °C**_1)_**, regard<br>derating curve in**_Figure 1_**.|
|Junction temperature|_T_J|–|150|°C|–|
|Operating case temperature|_T_A|-40|105**_2)_**|°C|–|
|Storage temperature|_T_Stg|-55|150|°C|–|
_**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component.**_
> 1 _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB.
> 2 At the same time regard _T_ J,max.
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## **Recommended operating conditions**
## **2 Recommended operating conditions**
This following table shows examples of recommended operating conditions. As long as maximum ratings are regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime. For further information refer to the quality report available on the BFQ790 internet page.
|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|**2**<br>**Recommended operating conditions**<br>This following table shows examples of recommended operating conditions. As long as maximum ratings are<br>regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.<br>For further information refer to the quality report available on the BFQ790 internet page.|
|---|---|---|---|---|---|---|---|---|
|**Table 3**<br>**Recommended operating conditions**|||||||||
|**Operating**<br>**mode**|**Ambient**<br>**tempera-**<br>**ture****_1)_**|**Collector**<br>**current**|**DC**<br>**power****_2)_**|**RF**<br>**output**<br>**power****_3)_**|**Eficiency****_4)_ **|**Dissipated**<br>**power****_5)_**|**Thermal**<br>**resistance**<br>**of PCB****_6)_**|**Junction**<br>**tempera-**<br>**ture****_7)_**|
||_T_A<br>[°C]|_I_C<br>[mA]|_P_DC<br>[mW]|_P_RFout<br>[mW]<br>(dBm)|η<br>[%]|_P_diss<br>[mW]|_R_thSA<br>[K/W]|_T_J<br>[°C]|
|Compression|55|250|1250|500 (27)|40|750|45|110|
|Final stage|55|200|1000|250 (24)|25|750|45|110|
|High_T_A|85|120|600|50 (17)|8.5|550|20|110|
|Maximum_T_A|105|50|250|100 (20)|40|150|30|110|
|Linear|55|150|750|50 (17)|7|700|50|110|
|Very linear|55|250|1250|50 (17)|4|1200|20|110|
- 1 Is the operating case temperature respectively of the heat sink.
- 2 _P_ DC = _V_ CE* _I_ C with _V_ CE = 5 V.
- 3 RF power delivered to the load, _P_ RFout = η * _P_ DC.
- 4 Efficiency of the conversion from DC power to RF power, η = _P_ RFout / _P_ DC (collector efficiency). 5 _P_ diss = _P_ DC - _P_ RFout. The RF output power _P_ RFout delivered to the load reduces the power _P_ diss to be dissipated by the device. This means a good output match is recommended.
- 6 _R_ thSA is the thermal resistance of the PCB including heat sink, that is between the soldering point _S_ and the ambient _A_ . Regard the impact of _R_ thSA on the junction temperature _T_ J, see below. The thermal design of the PCB, respectively _R_ thSA, has to be adjusted to the intended operating mode.
- 7 _T_ J = _T_ A + _P_ diss * _R_ thJA.
- _R_ thJA = _R_ thJS + _R_ thSA.
- _R_ thJA is the thermal resistance between the transistor junction _J_ and the ambient _A_ .
- _R_ thJS is the combined thermal resistance of die and package, which is 25 K/W for BFQ790, see _**Chapter 3**_ .
Datasheet
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## **Thermal characteristics**
## **3 Thermal characteristics**
## **Table 4**
## **Thermal resistance**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Junction - soldering point|_R_thJS|–|25|–|K/W|–|
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## **Figure 1 Absolute maximum power dissipation** _**P**_ **diss,max = f(** _**T**_ **S)**
_Note: In the horizontal part of the derating curve the maximum power dissipation is given by P_ diss,max _≈ V_ CE,max _* I_ C,max _. In this part, the junction temperature T_ J _is lower than T_ J,max _. In the declining slope, it is T_ J _= T_ J,max _. P_ diss,max _has to be reduced according to the curve in order not to exceed T_ J,max _. It is T_ J,max _= T_ S _+ P_ diss,max _* R_ thJS _._
Datasheet
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## **Electrical performance in test fixture**
## **4 Electrical performance in test fixture**
## **4.1 DC parameter table**
## **DC characteristics at** _**T**_ **A = 25 °C**
||||||||
|---|---|---|---|---|---|---|
|**Table 5**<br>**DC characteristics at****_T_A = 25**||**°C**|||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Collector emitter breakdown voltage|_V_(BR)CEO|6.1|6.7|–|V|_I_C= 1 mA, open base|
|Collector emitter leakage current|_I_CES|–<br>–|1<br>0.1|40**_1)_**<br>3|nA<br>μA|_V_CE= 8 V,_V_BE= 0 V<br>_V_CE= 18 V,_V_BE= 0 V,<br>E-B short circuited|
|Collector base leakage current|_I_CBO|–|1|40**_1)_**|nA|_V_CB= 8_V_,_I_E= 0,<br>open emitter|
|Emitter base leakage current|_I_EBO|–|1|40**_1)_**|μA|_V_EB= 0.5 V,_I_C= 0,<br>open collector|
|DC current gain|_h_FE|60|120|180||_V_CE= 5 V,_I_C= 250 mA,<br>pulse measured**_2)_**|
## **4.2 AC parameter tables**
## **General AC characteristics at** _**T**_ **A = 25 °C**
||||||||
|---|---|---|---|---|---|---|
|**Table 6**<br>**General AC characteristics at****_T_A = 25 °C**|||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Transition frequency|_f_T|–|20|–|GHz|_V_CE= 5 V,_I_C= 250 mA,<br>_f_= 0.5 GHz|
|Collector base capacitance|_C_CB|–|1.1|–|pF|_V_CB= 5 V,_V_BE= 0 V,<br>_f_= 1 MHz,<br>emitter grounded|
|Collector emitter capacitance|_C_CE|–|2.2|–|pF|_V_CE= 5 V,_V_BE= 0 V,<br>_f_= 1 MHz,<br>base grounded|
|Emitter base capacitance|_C_EB|–|9.4|–|pF|_V_EB= 0.5 V,_V_CB= 0 V,<br>_f_= 1 MHz,<br>collector grounded|
- 1 Upper spec value not limited by the device but by the short cycle time of the 100% test.
- 2 Pulse width is 1 ms, duty cycle 10%. Regard that the current gain _h_ FE depends on the junction temperature _T_ J and _T_ J amongst others from the thermal resistance _R_ thSA of the PCB, see notes to _**Table 3**_ . Hence the _h_ FE specified in this datasheet must not be the same as in the application. It is highly recommended to apply circuit design techniques to make the collector current _I_ C independent on the _h_ FE production variation and temperature effects.
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## **Electrical performance in test fixture**
Measurement setup for the AC characteristics shown in _**Table 7**_ to _**Table 10**_ is a test fixture with Bias-T’s and tuners to adjust the source and load impedance in a 50 Ω system, _T_ A = 25 °C.
## **Figure 2 BFQ790 testing circuit**
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Table 7|AC characteristics,|V|CE = 5 V,|f|= 0.9 GHz|
|Parameter|Symbol|Values|Unit|Note or test condition|
|Min.|Typ.|Max.|
|Power gain|dB|
|Maximum power gain|G|ms|–|23|–|I|C = 250 mA|
|Transducer gain|||S|21||[2]|–|13|–|
|Minimum noise figure|dB|
|Minimum noise figure|NF|min|–|2.5|–|Z|S =|Z|S,opt,|I|C = 70 mA|
|Linearity|dBm|
|1 dB compression point at output|OP|1dB|–|27|–|Z|L =|Z|Lopt,|I|C = 250 mA|
|3rd order intercept point at output|OIP|3|–|38.5|–|
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**Table 8**
## **AC characteristics,** _**V**_ **CE = 5 V,** _**f**_ **= 1.8 GHz**
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Values|Unit|Note or test condition|
|Min.|Typ.|Max.|
|Power gain|dB|
|Maximum power gain|G|ma|–|18.5|–|I|C = 250 mA|
|Transducer gain|||S|21||[2]|–|7.5|–|
|Minimum noise figure|dB|
|Minimum noise figure|NF|min|–|2.6|–|Z|S =|Z|S,opt,|I|C = 70 mA|
|Linearity|dBm|
|1 dB compression point at output|OP|1dB|–|27|–|Z|L =|Z|Lopt,|I|C = 250 mA|
|3rd order intercept point at output|OIP|3|–|38.5|–|
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Datasheet
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## **Electrical performance in test fixture**
## **AC characteristics,** _**V**_ **CE = 5 V,** _**f**_ **= 2.6 GHz**
|**Table 9**<br>**AC characteristics,****_V_CE = 5 V,**|**Table 9**<br>**AC characteristics,****_V_CE = 5 V,**|**_f_ = 2.6 GHz**|**_f_ = 2.6 GHz**|**_f_ = 2.6 GHz**|**_f_ = 2.6 GHz**|**_f_ = 2.6 GHz**|
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|**Power gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|16<br>5.5|–<br>–|dB|_I_C= 250 mA|
|**Minimum noise figure**<br>Minimum noise figure|_NF_min|–|3|–|dB|_Z_S=_Z_S,opt,_I_C= 70 mA|
|**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP_3|–<br>–|27<br>38.5|–<br>–|dBm|_Z_L=_Z_Lopt,_I_C= 250 mA|
|**Table 10**<br>**AC characteristics,****_V_CE = 5 V,**|**Table 10**<br>**AC characteristics,****_V_CE = 5 V,**|**_f_ = 3.5 GHz**|**_f_ = 3.5 GHz**|**_f_ = 3.5 GHz**|**_f_ = 3.5 GHz**|**_f_ = 3.5 GHz**|
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|**Power gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|13<br>3|–<br>–|dB|_I_C= 250 mA|
|**Minimum noise figure**<br>Minimum noise figure|_NF_min|–|3.4|–|dB|_Z_S=_Z_S,opt,_I_C= 70 mA|
|**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP_3|–<br>–|27<br>38.5|–<br>–|dBm|_Z_L=_Z_Lopt,_I_C= 250 mA|
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## **Electrical performance in test fixture**
## **4.3 Characteristic DC diagrams**
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500<br>6mA<br>450<br>5.25mA<br>400<br>4.5mA<br>350<br>3.75mA<br>300<br>3mA<br>250<br>2.25mA<br>200<br>1.5mA<br>150<br>0.75mA<br>100<br>50<br>0mA<br>0<br>0 1 2 3 4 5 6 7<br>VCE [V]<br> [mA]<br>IC<br>**----- End of picture text -----**<br>
**Figure 3 Collector current vs. collector emitter voltage** _**I**_ **C = f(** _**V**_ **CE),** _**I**_ **B = parameter**
_Note: Refer to absolute maximum ratings for I_ C _, V_ CE _and P_ diss _._
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3<br>10<br>2<br>10<br>1<br>10<br>0 1 2 3<br>10 10 10 10<br>Ic [mA]<br>FE<br>h<br>**----- End of picture text -----**<br>
**Figure 4 DC Current gain** _**h**_ **FE = f(** _**I**_ **C),** _**V**_ **CE = 5 V**
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## **Electrical performance in test fixture**
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**Figure 5 Collector emitter breakdown voltage** _**V**_ **(BR)CER = f(** _**R**_ **BE)**
_Note:_
_The above figure shows the collector-emitter breakdown voltage V_ (BR)CER _with a resistor R_ BE _between base and emitter. Only for very high R_ BE _values ("open base") the breakdown voltage V_ (BR)CER _is as low as V_ (BR)CEO _(here 6.6 V). With decreasing R_ BE _values V_ (BR)CER _increases, e.g. at R_ BE _= 10 k_ Ω _to V_ (BR)CEO _= 10 V. In the application the biasing base resistance together with block capacitors take over the function of R_ BE _and allows the RF voltage amplitude to swing up to voltages much higher than V_ (BR)CEO _, without clipping. Due to this effect the transistor can be biased at V_ CE _= 5 V and still high RF output powers achieved, see the OP_ 1dB _values reported in_ _**Chapter 4.2** ._
Datasheet
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## **Electrical performance in test fixture**
## **4.4 Characteristic AC diagrams**
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25<br>20<br>3.00V<br> 4.00V<br> 5.00V<br> 2.00V<br>15<br>10<br>5<br> 1.00V<br>0.50V<br>0<br>0 100 200 300 400 500 600<br>IC [mA]<br>Figure 6 Transition frequency f T = f( I C), f = 1 GHz, V CE = parameter<br>3<br>2.6<br>2.2<br> 1.00V<br>1.8<br> 2.00V<br>1.4<br> 3.00V<br> 4.00V<br>5.00V<br>1<br>0 100 200 300 400 500 600<br>IC [mA]<br> [GHz]<br>fT<br>CCB [pF]<br>**----- End of picture text -----**<br>
**Figure 7 Collector base capacitance** _**C**_ **CB = f(** _**I**_ **C),** _**f**_ **= 30 MHz,** _**V**_ **CB = parameter**
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## **Electrical performance in test fixture**
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36<br>G<br>ms<br>33<br>30<br>27<br>24<br>21<br>18<br>G<br>ma<br>15<br>12<br>9<br>6<br>3 |S 21 | [2]<br>0<br>0 1 2 3 4 5 6<br>f [GHz]<br>G [dB]<br>**----- End of picture text -----**<br>
**Figure 8 Gain** _**G**_ **ms,** _**G**_ **ma, I** _**S**_ **21I[2] = f(** _**f**_ **),** _**V**_ **CE = 5 V,** _**I**_ **C = 250 mA**
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36<br>33<br> 0.15GHz<br>30<br>27<br> 0.45GHz<br>24<br> 0.90GHz<br>21<br> 1.50GHz<br>18<br> 1.80GHz<br> 2.60GHz<br>15<br>3.50GHz<br>12<br>9<br>6<br>0 100 200 300 400 500 600<br>IC [mA]<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br>
**Figure 9 Maximum power gain** _**G**_ **max = f(** _**I**_ **C),** _**V**_ **CE = 5 V,** _**f**_ **= parameter**
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## **Electrical performance in test fixture**
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36<br>33<br> 0.15GHz<br>30<br>27<br> 0.45GHz<br>24<br> 0.90GHz<br>21<br> 1.50GHz<br>18 1.80GHz<br> 2.60GHz<br>15<br>3.50GHz<br>12<br>9<br>6<br>0 1 2 3 4 5 6 7<br>VCE [V]<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br>
**Figure 10 Maximum power gain** _**G**_ **max = f(** _**V**_ **CE),** _**I**_ **C = 250 mA,** _**f**_ **= parameter**
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1<br>1.5<br>0.5 2<br>4.0<br>5.0<br>0.4<br>3<br>0.3 3.0<br>6.0<br>4<br>0.2 5<br>2.0 0.01 to 6 GHz<br>0.1 10<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>1.0 0.01<br>−0.1 −10<br>−0.2 −5<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2 70 mA<br>150 mA<br>−1.5<br>−1 200 mA<br>250 mA<br>**----- End of picture text -----**<br>
**Figure 11 Input reflection coefficient** _**S**_ **11 = f(** _**f**_ **),** _**V**_ **CE = 5 V,** _**I**_ **C = parameter**
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## **Electrical performance in test fixture**
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1<br>1.5<br>0.5 2<br>0.4<br>5.0 3<br>0.3 4.0 6.0<br>4<br>0.2 3.0 5<br>0.01 to 6 GHz<br>2.0<br>0.1 10<br>1.0<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>−0.1 0.01 −10<br>−0.2 −5<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2 70 mA<br>−1.5 150 mA<br>−1 200 mA<br>250 mA<br>**----- End of picture text -----**<br>
**Figure 12 Output reflection coefficient** _**S**_ **22 = f(** _**f**_ **),** _**V**_ **CE = 5 V,** _**I**_ **C = parameter**
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1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>0.45<br>0.45 to 3.5 GHz<br>0.1 10<br>0.9<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>1.5<br>−0.1 −10<br>1.8<br>−0.2 −5<br>−4<br>2.6<br>−0.3<br>−3<br>3.0<br>−0.4<br>3.5<br>−0.5 −2<br>70 mA<br>−1.5 150 mA<br>−1 200 mA<br>250 mA<br>**----- End of picture text -----**<br>
**Figure 13 Source impedance for minimum noise figure** _**Z**_ **S,opt = f(** _**f**_ **),** _**V**_ **CE = 5 V,** _**I**_ **C = parameter**
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## **Electrical performance in test fixture**
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5<br>4.5<br>4<br>3.5<br>3<br>2.5<br>IC = 250 mA<br>I = 200 mA<br>2 C<br>IC = 150 mA<br>1.5<br>IC = 70 mA<br>1<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>f [GHz]<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br>
**Figure 14 Noise figure** _**NF**_ **min = f(** _**f**_ **),** _**V**_ **CE = 5 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**I**_ **C = parameter**
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5<br>4.5<br>4<br>3.5<br>3<br>2.5<br>f = 3.5 GHz<br>f = 2.6 GHz<br>2<br>f = 1.8 GHz<br>f = 1.5 GHz<br>1.5<br>1<br>0 50 100 150 200 250<br>IC [mA]<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br>
**Figure 15 Noise figure** _**NF**_ **min = f(** _**I**_ **C),** _**V**_ **CE = 5 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**f**_ **= parameter**
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## **Electrical performance in test fixture**
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**----- Start of picture text -----**<br>
8<br>7.5<br>7<br>6.5<br>6<br>5.5<br>5<br>4.5<br>f = 3.5 GHz<br>4<br>f = 2.6 GHz<br>3.5<br>f = 1.8 GHz<br>3<br>f = 1.5 GHz<br>2.5<br>2<br>0 50 100 150 200 250<br>IC [mA]<br> [dB]<br>50<br>NF<br>**----- End of picture text -----**<br>
**Figure 16**
**Noise figure** _**NF**_ **50 = f(** _**I**_ **C),** _**V**_ **CE = 5 V,** _**Z**_ **S = 50 Ω,** _**f**_ **= parameter**
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1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>21.3 4<br>0.2 5<br>23.4<br>0.1 24.3 10<br>0 0.1 0.2 26.50.3 0.4 02.56 25.2 213.9 1.5 2 3 4 5<br>27<br>−0.1 −10<br>25.6 24.7<br>−0.2 −5<br>23.4 −4<br>−0.3<br>21.3 −3<br>−0.4<br>−0.5 −2<br>−1.5<br>−1<br>**----- End of picture text -----**<br>
**Figure 17 Load pull contour** _**OP**_ **1dB [dBm],** _**V**_ **CE = 5 V,** _**I**_ **C = 250 mA,** _**f**_ **= 900 MHz**
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## **Electrical performance in test fixture**
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1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>32.5 4<br>0.2 5<br>34.7<br>0.1 10<br>35.7<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0 37.9 37.4<br>36.3<br>−0.1 38.5 −10<br>36.8<br>−0.2 −5<br>35.2 −4<br>−0.3<br>33 −3<br>−0.4<br>−0.5 −2<br>−1.5<br>−1<br>**----- End of picture text -----**<br>
**Figure 18 Load pull contour** _**OIP**_ **3 [dBm],** _**V**_ **CE = 5 V,** _**I**_ **C = 250 mA,** _**f**_ **= 900 MHz**
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1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3 14.4<br>16 4<br>16.5<br>0.2 5<br>0.1 19.6 19 18 17 10<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>18.5<br>−0.1 −10<br>17.5<br>16.5<br>−0.2 15.5 −5<br>−4<br>−0.3 13.4 −3<br>−0.4<br>−0.5 −2<br>−1.5<br>−1<br>**----- End of picture text -----**<br>
**Figure 19 Load pull contour gain** _**G**_ **[dB],** _**V**_ **CE = 5 V,** _**I**_ **C = 250 mA,** _**f**_ **= 900 MHz**
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## **Electrical performance in test fixture**
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80 300<br>IP1dB<br>70 280<br>I<br>C<br>60 260<br>PAE<br>50 240<br>40 220<br>30 200<br>G<br>20 180<br>Pout<br>10 160<br>0 140<br>−20 −15 −10 −5 0 5 10 15 20<br>P<br>in [dBm]<br> [mA]<br>IC<br>Pout [dBm], Gain [dB], PAE [%]<br>**----- End of picture text -----**<br>
**Figure 20** _**P**_ **out,** _**Gain**_ **,** _**I**_ **C,** _**PAE**_ **= f(** _**P**_ **in),** _**V**_ **CE = 5 V,** _**I**_ **Cq = 155 mA,** _**f**_ **= 900 MHz,** _**Z**_ **L =** _**Z**_ **L,opt (** _**P**_ **out)**
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60 290<br>IP1dB<br>50<br>40 280<br>30<br> G<br>20 270<br>Pout PAE<br>10<br> I<br>C<br>0 260<br>−10<br>−20 250<br>−25 −20 −15 −10 −5 0 5 10 15<br>P<br>in [dBm]<br> [mA]<br>IC<br>Pout [dBm], Gain [dB], PAE [%]<br>**----- End of picture text -----**<br>
**Figure 21** _**P**_ **out,** _**Gain**_ **,** _**I**_ **C,** _**PAE**_ **= f(** _**P**_ **in),** _**V**_ **CE = 5 V,** _**I**_ **Cq = 250 mA,** _**f**_ **= 900 MHz,** _**Z**_ **L =** _**Z**_ **L,opt (** _**P**_ **out)**
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## **Electrical performance in test fixture**
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50 280<br>IP1dB<br>40 275<br> I<br>C<br>30 270<br>Pout<br>20 265<br> G<br>10 260<br>PAE<br>0 255<br>−10 250<br>−25 −20 −15 −10 −5 0 5 10 15<br>P<br>in [dBm]<br>Figure 22 P out, Gain , I C, PAE = f( P in), V CE = 5 V, I Cq = 250 mA, f = 2.6 GHz, Z L = Z L,opt ( P out)<br>39<br>38<br>37<br>36<br>35<br>34<br>33<br>32<br>50 100 150 200 250<br>IC [mA]<br> [mA]<br>IC<br>Pout [dBm], Gain [dB], PAE [%]<br>OIP3 [dBm]<br>**----- End of picture text -----**<br>
**Figure 23**
_**OIP**_ **3 = f(** _**I**_ **C),** _**V**_ **CE = 5 V,** _**f**_ **= 900 MHz,** _**Z**_ **L =** _**Z**_ **L,opt (** _**P**_ **out)**
_Note: The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. T_ A _= 25 °C._
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## **Package information SOT89**
## **5 Package information SOT89**
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4.5 ±0.1<br>B<br>45˚ 1.5 [±0.1]<br>0.25 ±0.05 0.2 MAX. [1)] 1.6 ±0.2<br>0.15<br>1 2 3<br>1.5 0.35 ±0.1<br>0.45 -0.1 [+0.2]<br>0.15 M B x3<br>3<br>0.2 B<br>1) Ejector pin markings possible SOT89-PO V02<br>1) ±0.1 +0.1 -0.15<br>1±0.1 2.5 4±0.25 2.75<br>±0.2<br>1<br>**----- End of picture text -----**<br>
## **Figure 24 Package outline (dimensions in mm)**
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2.0<br>0.8<br>0.8 0.7<br>2.5<br>1.0<br>1.2<br>**----- End of picture text -----**<br>
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SOT89-FP V02<br>**----- End of picture text -----**<br>
## **Figure 25 Foot print (dimension in mm)**
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Figure 26 Marking layout example<br>8<br>4 0.2<br>4.3 1.6<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ]<br>Figure 27 Tape information<br>12<br>4.6<br>**----- End of picture text -----**<br>
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## **Revision history**
## **Revision history**
|**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**|
|---|---|---|
|3.0|2018-09-26|New datasheet layout.|
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## **Trademarks**
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Updated at April 21, 2026
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