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This product is RoHS compilant

BFQ18A,115

Bipolar - RF Transistor, NPN, 18 V, 4 GHz, 1 W, 150 mA, SOT-89

  • Manufacturer: NXP
  • Product type: Bipolar RF Transistors
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Power Dissipation: 1W
  • RF Transistor Case: SOT-89
  • DC Current Gain hFE: 25hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN
  • DC Collector Current: 150mA
  • Power Dissipation Pd: 1W
  • Transition Frequency: 4GHz
  • Transistor Case Style: SOT-89
  • DC Current Gain hFE Min: 25hFE
  • Operating Temperature Max: 175°C
  • Continuous Collector Current: 150mA
  • Collector Emitter Voltage Max: 18V
  • Collector Emitter Voltage V(br)ceo: 18V
Delivery and price
Units per pack 250
Price 0.267 €
Current stock N/A
Lead time 30 days