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BFP760H6327XTSA1
Bipolar - RF Transistor, NPN, 4 V, 45 GHz, 240 mW, 70 mA, SOT-343
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency ft:45GHz; Power Dissipation Pd:240mW; DC Collector Current:70mA; DC Current Gain hFE:160hFE; RF
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: BFP760
- Qualification: AEC-Q101
- Power Dissipation: 240mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 45GHz
- Transistor Case Style: SOT-343
- DC Current Gain hFE Min: 160hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 70mA
- Collector Emitter Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.198 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **BFP760** ## **SiGe:C NPN RF bipolar transistor** Order now © ree ><) Simulation et) Support ## **Product description** The BFP760 is a wideband NPN RF heterojunction bipolar transistor (HBT). ## **Feature list** - Low noise figure _NF_ min = 0.95 dB at 5.5 GHz, 3 V, 10 mA - High gain _G_ ms = 16.5 dB at 5.5 GHz, 3 V, 30 mA - _OIP_ 3 = 27 dBm at 5.5 GHz, 3 V, 30 mA ## **Product validation** Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. ## **Potential applications** - Wireless communications: WLAN, WiMAX and UWB - Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB - Multimedia applications such as mobile/portable TV, CATV and FM radio - ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications ## **Device information** |**Product name / Ordering code**|**Package**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Pin configuration**|**Marking**|**Pieces / Reel**| |---|---|---|---|---|---|---|---| |BFP760 / BFP760H6327XTSA1|SOT343|1 = B|2 = E|3 = C|4 = E|R6s|3000| ## _**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_ Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4| |**3**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.2|General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.3|Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |3.4|Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |3.5|Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**4**|**Package information SOT343**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21| Datasheet 2 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Absolute maximum ratings** ## **1 Absolute maximum ratings** |**Table 2**<br>**Absolute maximum ratings at****_T_A**|**Table 2**<br>**Absolute maximum ratings at****_T_A**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**|**= 25 °C (unless otherwise specified)**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Max.**||| |Collector emitter voltage|_V_CEO|–|4.0|V|Open base| ||||3.5||_T_A= -55 °C, open base| |Collector emitter voltage|_V_CES||13||E-B short circuited| |Collector base voltage|_V_CBO||13||Open emitter| |Emitter base voltage|_V_EBO||1.2||Open collector| |Base current|_I_B||4|mA|–| |Collector current|_I_C||70||| |Total power dissipation**_1)_**|_P_tot||240|mW|_T_S≤ 95 °C| |Junction temperature|_T_J||150|°C|–| |Storage temperature|_T_Stg|-55|||| _**Attention** :_ _**Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit.**_ > 1 _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** ## **2 Thermal characteristics** **==> picture [512 x 363] intentionally omitted <==** **----- Start of picture text -----**<br> Table 3 Thermal resistance<br>Parameter Symbol Values Unit Note or test condition<br>Min. Typ. Max.<br>Junction - soldering point R thJS – 230 – K/W –<br>280<br>240<br>200<br>160<br>120<br>80<br>40<br>0<br>0 25 50 75 100 125 150<br>T [°C]<br>S<br> [mW]<br>tot<br>P<br>**----- End of picture text -----**<br> **Figure 1 Total power dissipation** _**P**_ **tot = f(** _**T**_ **S)** Datasheet v2.0 2018-09-26 4 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3 Electrical characteristics** ## **3.1 DC characteristics** |**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|**Table 4**<br>**DC characteristics at****_T_A = 25 °C**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector emitter breakdown voltage|_V_(BR)CEO|4|4.7|–|V|_I_C= 1 mA,_I_B= 0,<br>open base| |Collector emitter leakage current|_I_CES|–|10<br>1|400**_1)_**<br>40**_1)_**|nA|_V_CE= 13 V,_V_BE= 0<br>_V_CE= 5 V,_V_BE= 0<br>E-B short circuited| |Collector base leakage current|_I_CBO||1|40**_1)_**||_V_CB= 5 V,_I_E= 0,<br>open emitter| |Emitter base leakage current|_I_EBO||1|40**_1)_**||_V_EB= 0.5 V,_I_C= 0,<br>open collector| |DC current gain|_h_FE|160|250|400||_V_CE= 3 V,_I_C= 35 mA,<br>pulse measured| ## **3.2 General AC characteristics** |**Table 5**<br>**General AC characteristics at****_T_A =**|**Table 5**<br>**General AC characteristics at****_T_A =**|**25 °C**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Transition frequency|_f_T|–|45|–|GHz|_V_CE= 3 V,_I_C= 35 mA,<br>_f_= 1 GHz| |Collector base capacitance|_C_CB||0.13|0.2|pF|_V_CB= 3 V,_V_BE= 0,<br>_f_= 1 MHz,<br>emitter grounded| |Collector emitter capacitance|_C_CE||0.42|–||_V_CE= 3 V,_V_BE= 0,<br>_f_= 1 MHz,<br>base grounded| |Emitter base capacitance|_C_EB||0.65|||_V_EB= 0.5 V,_V_CB= 0,<br>_f_= 1 MHz,<br>collector grounded| > 1 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet v2.0 2018-09-26 5 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.3 Frequency dependent AC characteristics** Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, _T_ A = 25 °C. **==> picture [466 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> VC<br>Top View<br>Bias-T<br>OUT<br>E C<br>VB<br>B E<br>Bias-T (Pin 1)<br>IN<br>**----- End of picture text -----**<br> ## **Figure 2 Testing circuit** |**Figure 2**<br>**Testing circuit**|**Figure 2**<br>**Testing circuit**|**Figure 2**<br>**Testing circuit**||||| |---|---|---|---|---|---|---| |**Table 6**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 900 MHz**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**<br>**.**|**Note or test condition**| |||**Min.**|**Typ.**|**Max**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|29<br>28|–|dB<br>dBm|_I_C= 30 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.5<br>25.5|||_I_C= 10 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||27<br>14|||_Z_S_= Z_L= 50 Ω,<br>_I_C= 30 mA| Datasheet 6 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** |**Table 7**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.8 GHz**|**Table 7**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.8 GHz**|**Table 7**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 1.8 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|25<br>22|–|dB|_I_C= 30 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.55<br>20.5|||_I_C= 10 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||28<br>14.5||dBm|_Z_S_= Z_L= 50 Ω,<br>_I_C= 30 mA| ## **AC characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 2.4 GHz** |||||||| |---|---|---|---|---|---|---| |**Table 8**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 2.4 GHz**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|23.5<br>20|–|dB|_I_C= 30 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.6<br>19|||_I_C= 10 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||28<br>14||dBm|_Z_S_= Z_L= 50 Ω,<br>_I_C= 30 mA| ## **AC characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 3.5 GHz** |||||||| |---|---|---|---|---|---|---| |**Table 9**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 3.5 GHz**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ms<br>|_S_21|2|–|21.5<br>16.5|–|dB|_I_C= 30 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.7<br>16|||_I_C= 10 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||28.5<br>14.5||dBm|_Z_S_= Z_L= 50 Ω,<br>_I_C= 30 mA| Datasheet v2.0 2018-09-26 7 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** |**Table 10**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 5.5 GHz**|**Table 10**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 5.5 GHz**|**Table 10**<br>**AC characteristics,****_V_CE = 3 V,****_f_ = 5.5 GHz**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Power gain<br>•<br>Maximum power gain<br>•<br>Transducer gain|_G_ma<br>|_S_21|2|–|16.5<br>12|–|dB|_I_C= 30 mA| |Noise figure<br>•<br>Minimum noise figure<br>•<br>Associated gain|_NF_min<br>_G_ass||0.95<br>12.5|||_I_C= 10 mA| |Linearity<br>•<br>3rd order intercept point at output<br>•<br>1 dB gain compression point at output|_OIP_3<br>_OP_1dB||27<br>13||dBm|_Z_S_= Z_L= 50 Ω,<br>_I_C= 30 mA| _Note: G_ ms _= IS_ 21 _/ S_ 12 _I for k < 1; G_ ma _= IS_ 21 _/ S_ 12 _I(k-(k_[2] _-1)_[1/2] _) for k > 1. In order to get the NF_ min _values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP_ 3 _value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50_ Ω _from 0.2 MHz to 12 GHz._ Datasheet 8 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.4 Characteristic DC diagrams** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 55<br>50<br>220µA<br>45<br>200µA<br>40 180µA<br>160µA<br>35<br>140µA<br>30 120µA<br>100µA<br>25<br>80µA<br>20<br>60µA<br>15<br>40µA<br>10<br>20µA<br>5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>V [V]<br>CE<br> [mA]<br>IC<br>**----- End of picture text -----**<br> **Figure 3 Collector current vs. collector emitter voltage** _**I**_ **C = f(** _**V**_ **CE),** _**I**_ **B = parameter** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>10<br>2<br>10<br>0 1 2<br>10 10 10<br>I [mA]<br>C<br>FE<br>h<br>**----- End of picture text -----**<br> **Figure 4 DC current gain** _**h**_ **FE = f(** _**I**_ **C),** _**V**_ **CE = 3 V** Datasheet 9 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>10<br>1<br>10<br>0<br>10<br>−1<br>10<br>−2<br>10<br>−3<br>10<br>−4<br>10<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85<br>V [V]<br>BE<br> [mA]<br>IC<br>**----- End of picture text -----**<br> **Figure 5 Collector current vs. base emitter forward voltage** _**I**_ **C = f(** _**V**_ **BE),** _**V**_ **CE = 2 V** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>10<br>−1<br>10<br>−2<br>10<br>−3<br>10<br>−4<br>10<br>−5<br>10<br>−6<br>10<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85<br>V [V]<br>BE<br> [mA]<br>IB<br>**----- End of picture text -----**<br> **Figure 6** **Base current vs. base emitter forward voltage** _**I**_ **B = f(** _**V**_ **BE),** _**V**_ **CE = 2 V** Datasheet 10 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> −11<br>10<br>−12<br>10<br>−13<br>10<br>0.6 0.7 0.8 0.9 1 1.1 1.2<br>V [V]<br>EB<br> [A]<br>IB<br>**----- End of picture text -----**<br> **Figure 7 Base current vs. base emitter reverse voltage** _**I**_ **B = f(** _**V**_ **EB),** _**V**_ **CE = 2 V** Datasheet v2.0 2018-09-26 11 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** ## **3.5 Characteristic AC diagrams** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br> 4.00V<br>40 3.50V<br> 3.00V<br>35<br>30<br> 2.50V<br>25<br>20<br>15 2.00V<br>10<br> 1.50V<br>5 1.00V<br>0<br>0 10 20 30 40 50 60 70 80<br>I [mA]<br>C<br> [GHz]<br>fT<br>**----- End of picture text -----**<br> ## **Figure 8 Transition frequency** _**f**_ **T = f(** _**I**_ **C),** _**f**_ **= 1 GHz,** _**V**_ **CE = parameter** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 0.28<br>0.24<br>0.2<br>0.16<br>0.12<br>0.08<br>0.04<br>0<br>0 0.6 1.2 1.8 2.4 3<br>V [V]<br>CB<br> [pF]<br>CB<br>C<br>**----- End of picture text -----**<br> **Figure 9 Collector base capacitance** _**C**_ **CB = f(** _**V**_ **CB),** _**f**_ **= 1 MHz** Datasheet 12 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [512 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>G<br>ms<br>25<br>20<br>G<br>ma<br>15<br>|S21| [2]<br>10<br>5<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>f [G]<br>Figure 10 Gain G ma, G ms, I S 21I [2] = f( f ), V CE = 3 V, I C = 30 mA<br>40<br> 0.15GHz<br>35<br> 0.45GHz<br>30 0.90GHz<br> 1.50GHz<br>25 1.90GHz<br> 2.40GHz<br>20 3.50GHz<br> 5.50GHz<br>15<br> 10.00GHz<br>10<br>5<br>0<br>0 10 20 30 40 50 60 70 80 90<br>I [mA]<br>C<br>G [dB]<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br> **Figure 11** **Maximum power gain** _**G**_ **max = f(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**f**_ **= parameter in GHz** Datasheet 13 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br> 0.15GHz<br>35<br> 0.45GHz<br>30<br> 0.90GHz<br> 1.50GHz<br>25 1.90GHz<br> 2.40GHz<br> 3.50GHz<br>20<br> 5.50GHz<br>15<br> 10.00GHz<br>10<br>5<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>V [V]<br>CE<br>max<br>G<br>**----- End of picture text -----**<br> **Figure 12 Maximum power gain** _**G**_ **max = f(** _**V**_ **CE),** _**I**_ **C = 30 mA,** _**f**_ **= parameter in GHz** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>15<br>2V, 2400MHz<br>3V, 2400MHz<br>10<br>2V, 5500MHz<br>3V, 5500MHz<br>5<br>0<br>0 10 20 30 40 50<br>I [mA]<br>C<br> [dBm]<br>3<br>OIP<br>**----- End of picture text -----**<br> **Figure 13** **3rd order intercept point at output** _**OIP**_ **3 = f(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**V**_ **CE,** _**f**_ **= parameters** Datasheet v2.0 2018-09-26 14 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>1 1.5 2 2.5 3 3.5 4<br>V [V]<br>CE<br>10<br>9<br>8<br>7 7<br>6 6<br>5 5<br>4<br>3 3<br>2 2<br>1 1<br>0 0<br>−3−4 −2−1 −3−4 −2−1 −3<br>9<br>8<br>4<br>2<br>1<br>11<br>10<br>3<br>−2<br>12<br>8<br>7<br>0<br>−1<br>13<br>5<br>6<br>11<br>14<br>12<br>4<br>9<br>13<br>10<br>15<br>10 12<br>3<br>4<br>−2<br>−1<br>1<br>2<br>0 7<br>8<br>5<br>6<br>9<br>4<br>6<br>14<br>8<br>7<br>5<br>11<br> [mA]<br>IC<br>**----- End of picture text -----**<br> **Figure 14 Compression point at output** _**OP**_ **1dB [dBm] = f(** _**I**_ **C,** _**V**_ **CE),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**f**_ **= 5.5 GHz** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>1 1.5 2 2.5 3 3.5 4<br>V [V]<br>CE<br>26<br>28<br>26<br>1819 22232425 27 28<br>17 20<br>27<br>131516 21<br>25<br>1234 1112<br>56<br>1112<br>789<br>13<br>10<br>14<br>24<br>15<br>23<br>26<br>16 1819<br>23<br>17 202122 24<br>26<br>14<br>22<br>25<br>15 16 17 18 19 20 21<br>27<br> [mA]<br>IC<br>**----- End of picture text -----**<br> **Figure 15 3rd order intercept point at output** _**OIP**_ **3 [dBm] = f(** _**I**_ **C,** _**V**_ **CE),** _**Z**_ **S =** _**Z**_ **L = 50 Ω,** _**f**_ **= 5.5 GHz** Datasheet v2.0 2018-09-26 15 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [280 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>10.0<br>0.5 9.0 10.0 2<br>9.0<br>0.4 8.0<br>8.0<br>7.0 3<br>0.3 6.0 6.0 7.0<br>4<br>5.0 5.0<br>0.2 5<br>4.0<br>0.03 to 10 GHz<br>4.0<br>0.1 3.0 10<br>0.1 3.00.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>2.0 0.03<br>0.03<br>−0.1 −10<br>2.0 1.0<br>−0.2 −5<br>−4<br>−0.3<br>−3<br>−0.4 1.0<br>−0.5 −2<br>−1.5<br>−1 30mA<br>10mA<br>**----- End of picture text -----**<br> **Figure 16 Input reflection coefficient** _**S**_ **11 = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 10 / 30 mA** **==> picture [279 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3 10.0<br>10.0 4<br>9.0<br>0.2 9.0 5<br>8.0<br>8.0 7.0 0.03 to 10 GHz<br>0.1 7.0 6.0 10<br>6.0 5.0<br>0.1 0.2 0.3 0.4 5.00.5 4.0 1 1.5 2 3 4 5<br>0<br>4.0 3.0 0.03 0.03<br>2.0<br>−0.1 3.0 −10<br>−0.2 2.0 1.0 −5<br>−4<br>−0.3<br>1.0 −3<br>−0.4<br>−0.5 −2<br>−1.5<br>−1 30mA<br>10mA<br>**----- End of picture text -----**<br> **Figure 17** **Output reflection coefficient** _**S**_ **22 = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 10 / 30 mA** Datasheet 16 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [512 x 631] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>0.1 2.4 1.8 10<br>3.5 0.9<br>0 0.1 0.2 0.3 0.4 0.5 0.9 1 1.5 2 3 4 5<br>1.8 2.4<br>3.5<br>−0.1 5.5 5.5 −10<br>8.0<br>−0.2 8.0 −5<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2<br>−1.5<br>−1 30mA<br>10mA<br>Figure 18 Source impedance for minimum noise figure Z S,opt = f( f ), V CE = 3 V, I C = 10 / 30 mA<br>2<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>I = 30mA<br>C<br>0.6<br>I = 10mA<br>C<br>0.4<br>0.2<br>0<br>0 1 2 3 4 5 6 7 8<br>f [GHz]<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 19 Noise figure** _**NF**_ **min = f(** _**f**_ **),** _**V**_ **CE = 3 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**I**_ **C = 10 / 30 mA** Datasheet v2.0 2018-09-26 17 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical characteristics** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>3<br>2.8 f = 8GHz<br>2.6 f = 5.5GHz<br>2.4 f = 3.5GHz<br>2.2 f = 2.4GHz<br>2 f = 1.8GHz<br>1.8 f = 0.9GHz<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 5 10 15 20 25 30 35 40<br>I [mA]<br>C<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 20 Noise figure** _**NF**_ **min = f(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**Z**_ **S =** _**Z**_ **S,opt,** _**f**_ **= parameter in GHz** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5.5<br>5<br>4.5<br>f = 8GHz<br>4 f = 5.5GHz<br>f = 3.5GHz<br>3.5<br>f = 2.4GHz<br>3 f = 1.8GHz<br>f = 0.9GHz<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 5 10 15 20 25 30 35 40<br>I [mA]<br>C<br>NF50 [dB]<br>**----- End of picture text -----**<br> **Figure 21** **Noise figure** _**NF**_ **50 = f(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**Z**_ **S = 50 Ω,** _**f**_ **= parameter in GHz** _Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T_ A _= 25 °C._ Datasheet 18 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **4 Package information SOT343** ## **Package information SOT343** **==> picture [190 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> i A 1.25±0.1<br>i 0.1 MIN. T bari 0.1 t_!<br>Somf 0.2 A e 2.1 t ±0.1 ,<br>i 7<br>p<br>c y p a<br>MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ]<br>±0.1<br>0.9<br>+0.10 -0.05 MAX.<br>0.15 0.1<br>0.1<br>0.15 3x<br>3 2<br>0.1<br>2±0.2 1.3<br>4 1<br>+0.10 -0.05 +0.10 -0.05<br>0.6 0.3<br>**----- End of picture text -----**<br> ## **Figure 22** ## **Package outline** ## **Figure 23** ## **Foot print** **==> picture [142 x 31] intentionally omitted <==** **----- Start of picture text -----**<br> = A TYPE CODE<br>NOTE OF MANUFACTURER<br>MONTH<br>YEAR 7<br>**----- End of picture text -----**<br> ## **Figure 24** ## **Marking layout example** **==> picture [172 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>2 0.2<br>(Oo L __ +<br>( == )OOTe ) O& r=1<br>(-EFEHe E/|) @<br>PIN 1 2.15 1.1<br>INDEX MARKING<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ a e ]<br>8<br>2.3<br>**----- End of picture text -----**<br> ## **Figure 25 Tape dimensions** Datasheet 19 v2.0 2018-09-26 **BFP760 SiGe:C NPN RF bipolar transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**| |---|---|---| |2.0|2018-09-26|New datasheet layout.| Datasheet 20 v2.0 2018-09-26 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2018-09-26 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2018 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-leh1519206637391** Infineon Technologies in customer’s applications. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 21, 2026
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